专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070028989A1 Control unit for yarn-braking devices in weft feeders for looms, and tuning method therefor 有权
标题翻译：用于织机纬编喂纱机的纱线制动装置的控制单元及其调谐方法
公开(公告)号：US20070028989A1
公开(公告)日：2007-02-08
申请号：US11455830
申请日：2006-06-20
申请人： Andrea Gotti , Luca Gotti
发明人： Andrea Gotti , Luca Gotti
IPC分类号： D03D25/00
CPC分类号： D03D47/366
摘要： A control unit for yarn-braking devices in weft feeders for looms, in which the yarn unwinding from the feeder is pressed between a drum and a braking member connected to two linear actuators controlled by position and provided with position sensors. A position control loop receives a position signal from the sensor and compares it with a reference variable in a subtracter for obtaining a position error. A position compensator receives the position error and outputs a reference current entering a current control loop connected to generate a voltage that supplies the actuator. The compensator incorporates a control transfer function that is variable as a function of an elastic constant of a mass-spring equivalent system, where the mass is the mass of the parts in motion between the braking member and the actuators, and the elastic constant matches with the elastic constant of the elastic elements.
摘要翻译：用于织机的纬纱喂纱器中的纱线制动装置的控制单元，其中从送料器退绕的纱线被压在连接到由位置控制并设置有位置传感器的两个线性致动器的鼓和制动构件之间。位置控制回路从传感器接收位置信号并将其与减法器中的参考变量进行比较，以获得位置误差。位置补偿器接收位置误差并输出进入连接的电流控制回路的参考电流，以产生供应致动器的电压。补偿器包括作为质量弹簧等效系统的弹性常数的函数可变的控制传递函数，其中质量是制动构件和致动器之间运动的部件的质量，并且弹性常数与弹性元素的弹性常数。

2. 发明申请

US20060237567A1 Positive yarn feeder for textile machines and the like 审中-公开
标题翻译：用于纺织机器的正纱喂入机等
公开(公告)号：US20060237567A1
公开(公告)日：2006-10-26
申请号：US11378345
申请日：2006-03-20
申请人： Rosario Castelli , Luca Gotti , Andrea Gotti
发明人： Rosario Castelli , Luca Gotti , Andrea Gotti
IPC分类号： B65H51/20
CPC分类号： D04B15/48 , D03D47/361 , H02K21/16 , H02K21/24 , H02K29/08
摘要： The yarn-feeder comprises a reel (R) having loops of yarn wound thereon and driven by a permanent-magnet, synchronous brushless motor to draw the yarn from a spool (RO) and to feed it to a textile machine arranged downstream (MF). The motor (M, M′) comprises a stator (STA, STA′) consisting of a substantially cylindrical, hollow housing having at least three elongated pole shoes (E1-E3, E1′-E3′) having respective excitation coils wound thereon (A, B, C, A′, B′, C′), and a rotor comprising a magnetic member having a circular profile with alternating poles, which is coaxially supported on the driving shaft (AM, AM′) near the coils.
摘要翻译：喂纱机包括卷绕在其上并由永久磁铁同步无刷马达驱动的纱线卷轴（R），以从卷轴（RO）中抽出纱线并将其送入布置在下游（MF）的纺织机器上，。马达（M，M'）包括由基本上圆柱形的中空壳体组成的定子（STA，STA'），其具有至少三个细长的极靴（E 1 -E 3，E 1'-E 3'），其具有相应的激励卷绕在其上的线圈（A，B，C，A'，B'，C'）和包括具有交替极的圆形轮廓的磁性构件的转子，其同轴地支撑在驱动轴（AM，AM'）附近线圈。

3. 发明授权

US07584014B2 Control unit for yarn-braking devices in weft feeders for looms, and tuning method therefor 有权
标题翻译：用于织机纬编喂纱机的纱线制动装置的控制单元及其调谐方法
公开(公告)号：US07584014B2
公开(公告)日：2009-09-01
申请号：US11455830
申请日：2006-06-20
申请人： Andrea Gotti , Luca Gotti
发明人： Andrea Gotti , Luca Gotti
IPC分类号： G06F19/00
CPC分类号： D03D47/366
摘要： A control unit for yarn-braking devices in weft feeders for looms, in which the yarn unwinding from the feeder is pressed between a drum and a braking member connected to two linear actuators controlled by position and provided with position sensors. A position control loop receives a position signal from the sensor and compares it with a reference variable in a subtracter for obtaining a position error. A position compensator receives the position error and outputs a reference current entering a current control loop connected to generate a voltage that supplies the actuator. The compensator incorporates a control transfer function that is variable as a function of an elastic constant of a mass-spring equivalent system, where the mass is the mass of the parts in motion between the braking member and the actuators, and the elastic constant matches with the elastic constant of the elastic elements.
摘要翻译：用于织机的纬纱喂纱器中的纱线制动装置的控制单元，其中从送料器退绕的纱线被压在连接到由位置控制并设置有位置传感器的两个线性致动器的鼓和制动构件之间。位置控制回路从传感器接收位置信号并将其与减法器中的参考变量进行比较，以获得位置误差。位置补偿器接收位置误差并输出进入连接的电流控制回路的参考电流，以产生供应致动器的电压。补偿器包括作为质量弹簧等效系统的弹性常数的函数可变的控制传递函数，其中质量是制动构件和致动器之间运动的部件的质量，并且弹性常数与弹性元素的弹性常数。

4. 发明申请

US20110278531A1 Forming Electrodes for Chalcogenide Containing Devices 有权
标题翻译：含硫族化合物的电极成型装置
公开(公告)号：US20110278531A1
公开(公告)日：2011-11-17
申请号：US12777419
申请日：2010-05-11
申请人： Davide Erbetta , Camillo Bresolin , Andrea Gotti
发明人： Davide Erbetta , Camillo Bresolin , Andrea Gotti
IPC分类号： H01L45/00 , H01L21/02 , B32B15/04 , B32B9/00 , C23C14/34 , B05D5/12
CPC分类号： H01L45/1253 , H01L45/04 , H01L45/06 , H01L45/144 , H01L45/16 , Y10T428/31678
摘要： The electrode of a phase change memory may be formed with a mixture of metal and a non-metal, the electrode having less nitrogen atoms than metal atoms. Thus, in some embodiments, at least a portion of the electrode has less nitrogen than would be the case in a metal nitride. The mixture can include metal and nitrogen or metal and silicon, as two examples. Such material may have good adherence to chalcogenide with lower reactivity than may be the case with metal nitrides.
摘要翻译：相变存储器的电极可以由金属和非金属的混合物形成，该电极的氮原子比金属原子少。因此，在一些实施例中，电极的至少一部分具有比金属氮化物中的情况更少的氮。作为两个实例，该混合物可以包括金属和氮或金属和硅。与金属氮化物的情况相比，这样的材料可能具有较低的反应性的硫族化合物的良好粘附性。

5. 发明授权

US09054295B2 Phase change memory cells including nitrogenated carbon materials, methods of forming the same, and phase change memory devices including nitrogenated carbon materials 有权
标题翻译：包括含氮碳材料的相变记忆单元，其形成方法以及包括含氮碳材料的相变记忆装置
公开(公告)号：US09054295B2
公开(公告)日：2015-06-09
申请号：US13215706
申请日：2011-08-23
申请人： Andrea Gotti , Luca Fumagalli
发明人： Andrea Gotti , Luca Fumagalli
IPC分类号： H01L21/8239 , H01L27/24 , H01L45/00
CPC分类号： H01L45/1293 , H01L27/2427 , H01L27/2463 , H01L45/06 , H01L45/1253 , H01L45/143 , H01L45/144 , H01L45/16 , H01L45/1616 , H01L45/1625
摘要： A phase change memory cell comprising a first chalcogenide compound on a first electrode, a first nitrogenated carbon material directly on the first chalcogenide compound, a second chalcogenide compound directly on the first nitrogenated carbon material, and a second nitrogenated carbon material directly on the second chalcogenide compound and directly on a second electrode. Other phase change memory cells are described. A method of forming a phase change memory cell and a phase change memory device are also described.
摘要翻译：一种相变存储单元，包括在第一电极上的第一硫族化合物，直接位于第一硫属化物化合物上的第一含氮碳材料，直接位于第一氮化碳材料上的第二硫族化合物，以及直接位于第二硫族化物上的第二含氮碳材料化合物并直接在第二电极上。其他相变存储单元被描述。还描述了形成相变存储单元和相变存储器件的方法。

6. 发明申请

US20150123066A1 ELECTRODE MATERIALS AND INTERFACE LAYERS TO MINIMIZE CHALCOGENIDE INTERFACE RESISTANCE 有权
标题翻译：电极材料和界面层，以最小化氯化铝界面电阻
公开(公告)号：US20150123066A1
公开(公告)日：2015-05-07
申请号：US14073927
申请日：2013-11-07
申请人： F. Daniel Gealy , Andrea Gotti , Davide Colombo , Kuo-Wei Chang
发明人： F. Daniel Gealy , Andrea Gotti , Davide Colombo , Kuo-Wei Chang
IPC分类号： H01L27/24 , H01L45/00
CPC分类号： H01L45/1608 , H01L27/2427 , H01L27/2463 , H01L27/2481 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/16
摘要： A phase-change memory cell having a reduced electrode-chalcogenide interface resistance and a method for making the phase-change memory cell are disclosed: An interface layer is formed between an electrode layer and a chalcogenide layer that and provides a reduced resistance between the chalcogenide-based phase-change memory layer and the electrode layer. Exemplary embodiments provide that the interface layer comprises a tungsten carbide, a molybdenum carbide, a tungsten boride, or a molybdenum boride, or a combination thereof. In one exemplary embodiment, the interface layer comprises a thickness of between about 1 nm and about 10 nm.
摘要翻译：公开了具有降低的电极 - 硫族化物界面电阻的相变存储单元和制造相变存储单元的方法：在电极层和硫族化物层之间形成界面层，并在硫族化物之间提供降低的电阻的相变存储层和电极层。示例性实施例提供界面层包括碳化钨，碳化钼，硼化钨或硼化钼，或其组合。在一个示例性实施例中，界面层包括约1nm至约10nm的厚度。

7. 发明授权

US08828788B2 Forming electrodes for chalcogenide containing devices 有权
标题翻译：形成含硫族化物的器件的电极
公开(公告)号：US08828788B2
公开(公告)日：2014-09-09
申请号：US12777419
申请日：2010-05-11
申请人： Davide Erbetta , Camillo Bresolin , Andrea Gotti
发明人： Davide Erbetta , Camillo Bresolin , Andrea Gotti
IPC分类号： H01L21/00 , H01L47/00 , H01L29/02
CPC分类号： H01L45/1253 , H01L45/04 , H01L45/06 , H01L45/144 , H01L45/16 , Y10T428/31678
摘要： The electrode of a phase change memory may be formed with a mixture of metal and a non-metal, the electrode having less nitrogen atoms than metal atoms. Thus, in some embodiments, at least a portion of the electrode has less nitrogen than would be the case in a metal nitride. The mixture can include metal and nitrogen or metal and silicon, as two examples. Such material may have good adherence to chalcogenide with lower reactivity than may be the case with metal nitrides.
摘要翻译：相变存储器的电极可以由金属和非金属的混合物形成，该电极的氮原子比金属原子少。因此，在一些实施例中，电极的至少一部分具有比金属氮化物中的情况更少的氮。作为两个实例，该混合物可以包括金属和氮或金属和硅。与金属氮化物的情况相比，这样的材料可能具有较低的反应性的硫族化合物的良好粘附性。

8. 发明申请

US20130048935A1 PHASE CHANGE MEMORY CELLS INCLUDING NITROGENATED CARBON MATERIALS, METHODS OF FORMING THE SAME, AND PHASE CHANGE MEMORY DEVICES INCLUDING NITROGENATED CARBON MATERIALS 有权
标题翻译：包括氮化物质的相变记忆体，其形成方法和包括氮化物质的相变记忆装置
公开(公告)号：US20130048935A1
公开(公告)日：2013-02-28
申请号：US13215706
申请日：2011-08-23
申请人： Andrea Gotti , Luca Fumagalli
发明人： Andrea Gotti , Luca Fumagalli
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： H01L45/1293 , H01L27/2427 , H01L27/2463 , H01L45/06 , H01L45/1253 , H01L45/143 , H01L45/144 , H01L45/16 , H01L45/1616 , H01L45/1625
摘要： A phase change memory cell comprising a first chalcogenide compound on a first electrode, a first nitrogenated carbon material directly on the first chalcogenide compound, a second chalcogenide compound directly on the first nitrogenated carbon material, and a second nitrogenated carbon material directly on the second chalcogenide compound and directly on a second electrode. Other phase change memory cells are described. A method of forming a phase change memory cell and a phase change memory device are also described.
摘要翻译：一种相变存储单元，包括在第一电极上的第一硫族化合物，直接位于第一硫属化物化合物上的第一含氮碳材料，直接位于第一氮化碳材料上的第二硫族化合物，以及直接位于第二硫族化物上的第二含氮碳材料化合物并直接在第二电极上。其他相变存储单元被描述。还描述了形成相变存储单元和相变存储器件的方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式