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    • 1. 发明授权
    • First and second order CMOS elementary cells for time-continuous analog
filters
    • 用于时间连续模拟滤波器的一阶和二阶CMOS单元
    • US6031416A
    • 2000-02-29
    • US67127
    • 1998-04-27
    • Andrea BaschirottoUgo BaschirottoGuido BrascaRinaldo Castello
    • Andrea BaschirottoUgo BaschirottoGuido BrascaRinaldo Castello
    • H03H11/04H03K5/00
    • H03H11/04
    • A CMOS elementary cell of the first order for time-continuous analog filters with non-linearity compensation, is connected between a first supply voltage reference and a second voltage reference. The cell is of a type which comprises at least a first MOS transistor having its conduction terminals connected to the first supply voltage reference and to an output terminal, and having a control terminal connected to an input terminal of the first order CMOS elementary cell. The cell further comprises a second MOS transistor in diode configuration, and an equivalent capacitor, both connected to the output terminal of the first order CMOS elementary cell. The second, diode-connected MOS transistor and the equivalent capacitor act as a load for the first MOS transistor. The first MOS transistor operates as a drive transistor operatively tied to an input voltage signal being supplied to the input terminal of the first order CMOS elementary cell. A second order filter CMOS elementary cell is similarly connected.
    • 具有非线性补偿的时间连续模拟滤波器的第一阶CMOS元件连接在第一电源电压基准和第二参考电压之间。 电池是至少包括其导通端子连接到第一电源电压基准的第一MOS晶体管和输出端子,并且具有连接到第一级CMOS基本单元的输入端子的控制端子的类型。 电池还包括二极管配置的第二MOS晶体管和等效电容器,两者均连接到一阶CMOS元件单元的输出端子。 第二个二极管连接的MOS晶体管和等效电容器用作第一MOS晶体管的负载。 第一MOS晶体管作为驱动晶体管工作,该驱动晶体管可操作地连接到被提供给第一阶CMOS元件单元的输入端的输入电压信号。 类似地连接二阶滤波器CMOS单元。
    • 3. 发明授权
    • Self-configurable, dual bridge, power amplifier
    • 自配置,双桥,功率放大器
    • US5621352A
    • 1997-04-15
    • US517239
    • 1995-08-21
    • Edoardo BottiGuido Brasca
    • Edoardo BottiGuido Brasca
    • H03F1/02H03F3/30H03F3/68H03F3/72
    • H03F1/0277H03F3/3081H03F3/68H03F3/72
    • A self-configurable, dual bridge, power amplifier has a window comparator sensing the level of input signals fed to the amplifier which-drives a plurality of configuring switches capable of configuring the amplifier as a single bridge amplifier driving a first and a second loads connected in series or as two distinct bridge amplifiers each driving one of the two loads. As long as the two levels of the input signals remain comprised between a range defined by a negative voltage reference and a positive voltage reference, the amplifier is configured as a single bridge driving the two loads in series, thus reducing sensibly power dissipation. Several embodiments of the configuring means are shown.
    • 一个可自配置的双桥功率放大器具有一个窗口比较器,用于感测馈送到放大器的输入信号的电平,驱动多个配置开关,能够将放大器配置为单桥放大器,驱动第一和第二负载连接 串联或作为两个不同的桥式放大器驱动两个负载之一。 只要输入信号的两个电平保持在由负电压基准和正电压基准定义的范围之间,则放大器被配置为串联驱动两个负载的单个桥,因此降低了明智的功率耗散。 示出了配置装置的几个实施例。
    • 4. 发明授权
    • MOS power transistor device with temperature compensation
    • MOS功率晶体管器件具有温度补偿功能
    • US5396119A
    • 1995-03-07
    • US47803
    • 1993-04-15
    • Guido BrascaEdoardo Botti
    • Guido BrascaEdoardo Botti
    • H01L29/78H01L21/336H01L27/02H03K17/08H03K3/26
    • H01L27/0248H01L27/0203
    • A device including a MOS power transistor, and a temperature sensor including a bipolar transistor integrated in the MOS transistor and having its emitter and collector connected directly to the source and gate terminals respectively of the MOS transistor. Parallel to the base-emitter junction of the bipolar transistor, there is connected a voltage source for biasing the junction to such a value that the bipolar transistor remains off at room temperature, and absorbs the maximum current supplied by a drive circuit of the MOS transistor at the maximum permissible temperature TUM. At temperature TUM, the bipolar transistor takes over control of the gate-source voltage of the MOS transistor for maintaining thermal feedback of the device at maximum temperature TUM.
    • 一种包括MOS功率晶体管的器件和包括集成在MOS晶体管中的双极晶体管的温度传感器,其发射极和集电极分别直接连接到MOS晶体管的源极和栅极端子。 与双极型晶体管的基极 - 发射极并联,连接有用于将结的偏置电压到在双极晶体管在室温下保持截止的值,并且吸收由MOS晶体管的驱动电路提供的最大电流 在最大允许温度TUM。 在温度TUM下,双极晶体管控制MOS晶体管的栅极 - 源极电压,以保持器件的热反馈在最高温度TUM。