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1. 发明授权

US06548817B1 Miniaturized cathodic arc plasma source 有权
标题翻译：小型化阴极电弧等离子体源
公开(公告)号：US06548817B1
公开(公告)日：2003-04-15
申请号：US09540678
申请日：2000-03-31
申请人： Andre Anders , Robert A. MacGill
发明人： Andre Anders , Robert A. MacGill
IPC分类号： H01J2700
CPC分类号： H01J37/32055 , H01J37/32623 , H01J37/3266 , H01J2237/022 , H05H1/48 , H05H2001/488
摘要： A cathodic arc plasma source has an anode formed of a plurality of spaced baffles which extend beyond the active cathode surface of the cathode. With the open baffle structure of the anode, most macroparticles pass through the gaps between the baffles and reflect off the baffles out of the plasma stream that enters a filter. Thus the anode not only has an electrical function but serves as a prefilter. The cathode has a small diameter, e.g. a rod of about ¼ inch (6.25 mm) diameter. Thus the plasma source output is well localized, even with cathode spot movement which is limited in area, so that it effectively couples into a miniaturized filter. With a small area cathode, the material eroded from the cathode needs to be replaced to maintain plasma production. Therefore, the source includes a cathode advancement or feed mechanism coupled to cathode rod. The cathode also requires a cooling mechanism. The movable cathode rod is housed in a cooled metal shield or tube which serves as both a current conductor, thus reducing ohmic heat produced in the cathode, and as the heat sink for heat generated at or near the cathode. Cooling of the cathode housing tube is done by contact with coolant at a place remote from the active cathode surface. The source is operated in pulsed mode at relatively high currents, about 1 kA. The high arc current can also be used to operate the magnetic filter. A cathodic arc plasma deposition system using this source can be used for the deposition of ultrathin amorphous hard carbon (a-C) films for the magnetic storage industry.
摘要翻译：阴极电弧等离子体源具有由多个隔开的隔板形成的阳极，该隔板延伸超过阴极的活性阴极表面。利用阳极的开放的挡板结构，大多数大颗粒通过挡板之间的间隙并从进入过滤器的等离子体流中反射出挡板。因此，阳极不仅具有电功能，而且用作预滤器。阴极具有小的直径，例如直径约1/4英寸（6.25毫米）的棒。因此，等离子体源输出很好地定位，即使在面积有限的阴极点运动中，也可以有效地耦合到小型化滤波器中。对于小面积的阴极，需要更换从阴极侵蚀的材料来维持等离子体生产。因此，源包括耦合到阴极棒的阴极前进或进给机构。阴极还需要冷却机构。可移动阴极杆容纳在用作电流导体的冷却金属屏蔽或管中，从而降低在阴极中产生的欧姆热，以及作为在阴极处或附近产生的热的散热器。通过在远离有源阴极表面的位置处与冷却剂接触来完成阴极壳体管的冷却。源以约1 kA的相对较高的电流在脉冲模式下工作。高电弧电流也可用于操作磁性过滤器。使用该源的阴极电弧等离子体沉积系统可用于沉积用于磁存储工业的超薄无定形硬碳（a-C）膜。

2. 发明授权

US06465780B1 Filters for cathodic arc plasmas 有权
标题翻译：阴极电弧等离子体过滤器
公开(公告)号：US06465780B1
公开(公告)日：2002-10-15
申请号：US09540679
申请日：2000-03-31
申请人： Andre Anders , Robert A. MacGill , Marcela M. M. Bilek , Ian G. Brown
发明人： Andre Anders , Robert A. MacGill , Marcela M. M. Bilek , Ian G. Brown
IPC分类号： B01D5944
CPC分类号： H01J37/32055 , G21K1/093 , H01J37/32623 , H01J37/3266 , H01J2237/022
摘要： Cathodic arc plasmas are contaminated with macroparticles. A variety of magnetic plasma filters has been used with various success in removing the macroparticles from the plasma. An open-architecture, bent solenoid filter, with additional field coils at the filter entrance and exit, improves macroparticle filtering. In particular, a double-bent filter that is twisted out of plane forms a very compact and efficient filter. The coil turns further have a flat cross-section to promote macroparticle reflection out of the filter volume. An output conditioning system formed of an expander coil, a straightener coil, and a homogenizer, may be used with the magnetic filter for expanding the filtered plasma beam to cover a larger area of the target. A cathodic arc plasma deposition system using this filter can be used for the deposition of ultrathin amorphous hard carbon (a-C) films for the magnetic storage industry.
摘要翻译：阴极电弧等离子体被大颗粒污染。已经使用各种磁性等离子体过滤器，其具有各种成功从血浆中除去大颗粒。开放架构的弯曲电磁过滤器，在过滤器入口和出口处具有额外的励磁线圈，可改善大颗粒过滤。特别地，扭曲成平面的双弯曲过滤器形成非常紧凑和有效的过滤器。线圈匝还具有平坦的横截面以促进大颗粒反射出过滤器体积。可以使用由膨胀器线圈，矫直线圈和均质器形成的输出调节系统与磁性过滤器一起扩展经过滤的等离子体束以覆盖目标的较大面积。使用该过滤器的阴极电弧等离子体沉积系统可用于沉积用于磁存储工业的超薄无定形硬碳（a-C）膜。

3. 发明申请

US20100225989A1 PHASE CHANGE DEVICE 审中-公开
标题翻译：相变装置
公开(公告)号：US20100225989A1
公开(公告)日：2010-09-09
申请号：US12716838
申请日：2010-03-03
申请人： Andre Anders
发明人： Andre Anders
IPC分类号： G02F1/19
CPC分类号： G02F1/19 , G02F1/0147
摘要： A phase change material is applied as a very thin film to a transparent substrate such as glass, which material when switched from the amorphous to the crystalline state and back again can affect the reflectivity/transmittance of the combined substrate-coating system. When used with glass panels in the fabrication of relatively large area window glass, the change in spectrally selective transmittance can be used to modulate the amount of sunlight passing through the glass, and thus reduce the amount of cooling required for an interior space in the summertime, and the amount of heating required of that same interior space in the wintertime, while also optimizing the use of visible daylight. Exemplary of a suitable phase change material for glass coating is GeSb or BiSn. Heating of the phase change material to initiate a change in phase can be provided by the application of electric energy, such as supplied from a pulsed power supply, or radiant energy, such as from a laser.
摘要翻译：将相变材料作为非常薄的薄膜施加到诸如玻璃的透明基板上，该材料从无定形状态切换到结晶状态时，再次返回可影响组合的基底涂覆系统的反射率/透射率。当在相对大面积的窗玻璃的制造中与玻璃面板一起使用时，可以使用光谱选择性透射率的变化来调节通过玻璃的阳光的量，从而减少夏季内部空间所需的冷却量，以及冬季同一内部空间所需的加热量，同时优化可见日光的使用。用于玻璃涂层的合适的相变材料的示例是GeSb或BiSn。可以通过施加诸如从脉冲电源提供的电能或诸如激光的辐射能来提供相变材料的加热以引发相位变化。

4. 发明申请

US20100264016A1 VERY LOW PRESSURE HIGH POWER IMPULSE TRIGGERED MAGNETRON SPUTTERING 有权
标题翻译：非常低的压力高功率脉冲触发磁控溅射
公开(公告)号：US20100264016A1
公开(公告)日：2010-10-21
申请号：US12797829
申请日：2010-06-10
申请人： Andre Anders , Joakim Andersson
发明人： Andre Anders , Joakim Andersson
IPC分类号： C23C14/34
CPC分类号： C23C14/354 , C23C14/16 , H01J37/3467
摘要： A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.
摘要翻译：描述了用于将涂层的非常低压高功率磁控溅射在基底上的方法和装置。通过本发明的方法，将基材和涂覆目标材料两者放置在可抽空的室中，并将室抽入真空。此后，一系列高脉冲电压脉冲施加到目标。几乎与每个脉冲同时地，在一个实施例中，与靶相同材料的小阴极电弧源被脉冲化，触发靠近目标表面的等离子体羽流，从而启动磁控溅射工艺。在另一个实施例中，使用旨在使位于磁控管靶表面附近的消融靶材料的脉冲激光产生等离子体羽流。

5. 发明授权

US5838522A Surface treatment of magnetic recording heads 失效
公开(公告)号：US5838522A
公开(公告)日：1998-11-17
申请号：US794672
申请日：1997-02-03
申请人： Kyriakos Komvopoulos , Ian G. Brown , Bo Wei , Simone Anders , Andre Anders , C. Singh Bhatia
发明人： Kyriakos Komvopoulos , Ian G. Brown , Bo Wei , Simone Anders , Andre Anders , C. Singh Bhatia
IPC分类号： C04B41/00 , C04B41/80 , C23C14/32 , C23C14/48 , G11B5/10 , G11B5/187 , G11B5/255 , G11B5/40 , G11B5/60 , G11B33/10
CPC分类号： C04B41/009 , C04B41/0027 , C04B41/0054 , C04B41/80 , C23C14/325 , C23C14/48 , G11B33/10 , G11B5/10 , G11B5/187 , G11B5/255 , G11B5/40 , G11B5/6005
摘要： Surface modification of magnetic recording heads using plasma immersion ion implantation and deposition is disclosed. This method may be carried out using a vacuum arc deposition system with a metallic or carbon cathode. By operating a plasma gun in a long-pulse mode and biasing the substrate holder with short pulses of a high negative voltage, direct ion implantation, recoil implantation, and surface deposition are combined to modify the near-surface regions of the head or substrate in processing times which may be less than 5 min. The modified regions are atomically mixed into the substrate. This surface modification improves the surface smoothness and hardness and enhances the tribological characteristics under conditions of contact-start-stop and continuous sliding. These results are obtained while maintaining original tolerances.

6. 发明申请

US20140284207A1 FILTERS FOR BLOCKING MACROPARTICLES IN PLASMA DEPOSITION APPARATUS 有权
标题翻译：用于阻塞等离子体沉积装置的过滤器
公开(公告)号：US20140284207A1
公开(公告)日：2014-09-25
申请号：US14218434
申请日：2014-03-18
申请人： Andre Anders , Jonathan Kolbeck
发明人： Andre Anders , Jonathan Kolbeck
IPC分类号： C23C14/35
CPC分类号： C23C14/564 , C23C14/35 , H01J37/3405 , H01J37/3408 , H01J37/3447 , H01J2237/028
摘要： This disclosure provides systems, methods, and apparatus related to blocking macroparticles in deposition processes utilizing plasmas. In one aspect, an apparatus includes a cathode, a substrate holder, a first magnet, a second magnet, and a structure. The cathode is configured to generate a plasma. The substrate holder is configured to hold a substrate. The first magnet is disposed proximate a first side of the cathode. The second magnet is disposed proximate a second side of the substrate holder. A magnetic field exists between the first magnet and the second magnet and a flow of the plasma substantially follows the magnetic field. The structure is disposed between the second side of the cathode and the first side of the substrate holder and is positioned proximate a region where the magnetic field between the first magnet and the second magnet is weak.
摘要翻译：本公开提供了在利用等离子体的沉积过程中与阻挡大颗粒相关的系统，方法和装置。在一个方面，一种装置包括阴极，衬底保持器，第一磁体，第二磁体和结构。阴极被配置为产生等离子体。衬底保持器构造成保持衬底。第一磁体设置在阴极的第一侧附近。第二磁体设置在衬底保持器的第二侧附近。在第一磁体和第二磁体之间存在磁场，并且等离子体的流动基本上跟随磁场。该结构设置在阴极的第二侧和衬底保持器的第一侧之间，并且位于第一磁体和第二磁体之间的磁场较弱的区域附近。

7. 发明申请

US20120138452A1 Method and Apparatus for Super-High Rate Deposition 审中-公开
标题翻译：超高速沉积的方法和装置
公开(公告)号：US20120138452A1
公开(公告)日：2012-06-07
申请号：US13264692
申请日：2010-04-13
申请人： Andre Anders
发明人： Andre Anders
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , C23C14/24 , C23C14/541 , H01J37/3408 , H01J37/3467 , H01J37/3497
摘要： A method and apparatus for achieving very high deposition rate magnetron sputtering wherein the surface of a target and especially the race track zone area of the target, in one embodiment may be heated to such a degree that the target material approaches the melting point and sublimation sets in. Controlled heating is achieved primarily through the monitoring of the temperature of the target material and with the aid of a processor subsequently controlling the target temperature by adjustment of the power being inputted to the target. This controlled heating to the sublimation point is particularly effecting in high deposition rate metal coating of parts when used in conjunction with HIPIMS deposition. The apparatus for controlling temperature of the target in one embodiment includes a thermocouple, which is electronically connected to a controller or microcomputer which is programmed to control the power of the pulse to the target, and the duty cycle of the power pulses as the primary means for regulating the temperature of the system.
摘要翻译：一种用于实现非常高的沉积速率磁控溅射的方法和装置，其中靶的表面，特别是靶的轨道区域区域，在一个实施例中可以被加热到目标材料接近熔点和升华组控制加热主要通过监测目标材料的温度并借助于处理器随后通过调节输入到目标的功率来控制目标温度来实现。当与HIPIMS沉积结合使用时，对升华点的受控加热特别地影响部件的高沉积速率金属涂层。在一个实施例中，用于控制目标温度的装置包括热电偶，其被电连接到被编程为控制到目标的脉冲的功率的控制器或微型计算机，并且功率脉冲的占空比作为主要装置用于调节系统的温度。

8. 发明授权

US6140773A Automated control of linear constricted plasma source array 有权
标题翻译：线性约束等离子体源阵列的自动控制
公开(公告)号：US6140773A
公开(公告)日：2000-10-31
申请号：US253268
申请日：1999-02-19
申请人： Andre Anders , Peter A. Maschwitz
发明人： Andre Anders , Peter A. Maschwitz
IPC分类号： H01J37/32 , H05H1/24
CPC分类号： H05H1/24 , H01J37/32009
摘要： An apparatus and method for controlling an array of constricted glow discharge chambers are disclosed. More particularly a linear array of constricted glow plasma sources whose polarity and geometry are set so that the contamination and energy of the ions discharged from the sources are minimized. The several sources can be mounted in parallel and in series to provide a sustained ultra low source of ions in a plasma with contamination below practical detection limits. The quality of film along deposition "tracks" opposite the plasma sources can be measured and compared to desired absolute or relative values by optical and/or electrical sensors. Plasma quality can then be adjusted by adjusting the power current values, gas feed pressure/flow, gas mixtures or a combination of some or all of these to improve the match between the measured values and the desired values.
摘要翻译：公开了一种用于控制辉光放电室的阵列的装置和方法。更具体地说是一种线性阵列的收缩辉光等离子体源，其极性和几何形状被设置为使得从源放出的离子的污染和能量最小化。可以并联并串联安装多个源，以在等离子体中提供持续的超低离子源，污染低于实际检测限。可以测量与等离子体源相对的沉积“轨道”的膜的质量，并通过光学和/或电传感器与期望的绝对值或相对值进行比较。然后可以通过调整功率电流值，气体进料压力/流量，气体混合物或其中的一些或全部组合来改善等离子体质量，以改善测量值与期望值之间的匹配。

9. 发明授权

US08574410B2 Method and apparatus for improved high power impulse magnetron sputtering 有权
标题翻译：用于改进大功率脉冲磁控溅射的方法和装置
公开(公告)号：US08574410B2
公开(公告)日：2013-11-05
申请号：US12989378
申请日：2009-02-17
申请人： Andre Anders
发明人： Andre Anders
IPC分类号： C23C14/35
CPC分类号： C23C14/345 , C23C14/358 , H01J37/3266 , H01J37/3408 , H01J37/3444 , H01J37/3467
摘要： A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 μs.
摘要翻译：一种高功率脉冲磁控溅射装置和使用具有磁控管靶的真空室和位于真空室中的基板的方法。位于磁控管靶和衬底之间的励磁线圈和连接到励磁线圈的脉冲电源和/或线圈偏置电源。脉冲电源连接到励磁线圈，脉冲电源输出功率脉冲宽度大于100微安。

10. 发明授权

US08568572B2 Very low pressure high power impulse triggered magnetron sputtering 有权
标题翻译：极低压大功率脉冲触发磁控溅射
公开(公告)号：US08568572B2
公开(公告)日：2013-10-29
申请号：US12797829
申请日：2010-06-10
申请人： Andre Anders , Joakim Andersson
发明人： Andre Anders , Joakim Andersson
IPC分类号： C23C14/00 , C23C14/32 , C23C4/00 , C25B9/00 , C25B11/00 , C25B13/00 , B05D1/08 , B05D3/14 , H05H1/26
CPC分类号： C23C14/354 , C23C14/16 , H01J37/3467
摘要： A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.
摘要翻译：描述了用于将涂层的非常低压高功率磁控溅射在基底上的方法和装置。通过本发明的方法，将基材和涂覆目标材料两者放置在可抽空的室中，并将室抽入真空。此后，一系列高脉冲电压脉冲施加到目标。几乎与每个脉冲同时地，在一个实施例中，与靶相同材料的小阴极电弧源被脉冲化，触发靠近目标表面的等离子体羽流，从而启动磁控溅射工艺。在另一个实施例中，使用旨在使位于磁控管靶表面附近的消融靶材料的脉冲激光产生等离子体羽流。

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