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1. 发明申请

US20070235840A1 Method, system, and apparatus for filling vias 有权
标题翻译：填充通孔的方法，系统和装置
公开(公告)号：US20070235840A1
公开(公告)日：2007-10-11
申请号：US11394856
申请日：2006-03-30
申请人： Amram Eitan , Dingying Xu
发明人： Amram Eitan , Dingying Xu
IPC分类号： H01L29/40 , H01L21/44
CPC分类号： H01L21/76898 , H01L21/78 , H01L2224/48091 , H01L2224/48137 , H01L2224/73265 , H01L2924/01019 , H01L2924/01079 , H01L2924/10253 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： A method, system, and apparatus, the method including, in some embodiments, applying a via filling material in a film format and at a first temperature to a backside of a silicon wafer having a plurality of vias therein, heating the via filling material to a second temperature to cause the via filling material to flow into and fill the plurality of vias, and applying a die attach material over the plurality of vias filled with the via filling material.
摘要翻译：一种方法，系统和装置，在一些实施例中，该方法包括将膜形式的通孔填充材料和第一温度施加到其中具有多个通孔的硅晶片的背面，将通孔填充材料加热至第二温度使得通孔填充材料流入并填充多个通孔，以及在填充有通孔填充材料的多个通孔上施加管芯附着材料。

2. 发明授权

US07851342B2 In-situ formation of conductive filling material in through-silicon via 有权
标题翻译：在硅通孔中原位形成导电填充材料
公开(公告)号：US07851342B2
公开(公告)日：2010-12-14
申请号：US11694902
申请日：2007-03-30
申请人： Dingying Xu , Amram Eitan
发明人： Dingying Xu , Amram Eitan
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： H01L21/76898 , H01L21/283
摘要： The formation of electronic assemblies including a die having through vias is described. In one embodiment, a method includes providing Si die including a first surface and a second surface opposite the first surface, and forming a via extending through the Si die from the first surface to the second surface. The via is formed to have a larger width at the first surface than at the second surface, the larger width at the first surface being no less than 100 microns. The method also includes placing a plurality of particles in the via, wherein at least some of the particles comprise a polymer and at least some of the particles comprise a metal. The method also includes heating the die and the particles in the via to cross-link at least part of the polymer in the via, and cooling the die to solidify the polymer and form a electrically conductive composite including the cross-linked polymer and the metal in the via. Other embodiments are described and claimed.
摘要翻译：描述了包括具有通孔的模具的电子组件的形成。在一个实施例中，一种方法包括提供包括第一表面和与第一表面相对的第二表面的Si模具，以及形成从第一表面延伸穿过Si模头的通孔到第二表面。通孔形成为在第一表面处具有比在第二表面处更大的宽度，第一表面处的较大宽度不小于100微米。该方法还包括将多个颗粒放置在通孔中，其中至少一些颗粒包含聚合物，并且至少一些颗粒包含金属。该方法还包括加热模头和通孔中的颗粒以将通孔中的至少一部分聚合物交联，并冷却模头以固化聚合物并形成包含交联聚合物和金属的导电复合材料在通道。描述和要求保护其他实施例。

3. 发明授权

US07557036B2 Method, system, and apparatus for filling vias 有权
标题翻译：填充通孔的方法，系统和装置
公开(公告)号：US07557036B2
公开(公告)日：2009-07-07
申请号：US11394856
申请日：2006-03-30
申请人： Amram Eitan , Dingying Xu
发明人： Amram Eitan , Dingying Xu
IPC分类号： H01L21/44
CPC分类号： H01L21/76898 , H01L21/78 , H01L2224/48091 , H01L2224/48137 , H01L2224/73265 , H01L2924/01019 , H01L2924/01079 , H01L2924/10253 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： A method, system, and apparatus, the method including, in some embodiments, applying a via filling material in a film format and at a first temperature to a backside of a silicon wafer having a plurality of vias therein, heating the via filling material to a second temperature to cause the via filling material to flow into and fill the plurality of vias, and applying a die attach material over the plurality of vias filled with the via filling material.
摘要翻译：一种方法，系统和装置，在一些实施例中，该方法包括将膜形式的通孔填充材料和第一温度施加到其中具有多个通孔的硅晶片的背面，将通孔填充材料加热至第二温度使得通孔填充材料流入并填充多个通孔，以及在填充有通孔填充材料的多个通孔上施加管芯附着材料。

4. 发明申请

US20080242079A1 IN-SITU FORMATION OF CONDUCTIVE FILLING MATERIAL IN THROUGH-SILICON VIA 有权
标题翻译：通过硅的导电填充材料形成现状
公开(公告)号：US20080242079A1
公开(公告)日：2008-10-02
申请号：US11694902
申请日：2007-03-30
申请人： Dingying Xu , Amram Eitan
发明人： Dingying Xu , Amram Eitan
IPC分类号： H01L21/768
CPC分类号： H01L21/76898 , H01L21/283
摘要： The formation of electronic assemblies including a die having through vias is described. In one embodiment, a method includes providing Si die including a first surface and a second surface opposite the first surface, and forming a via extending through the Si die from the first surface to the second surface. The via is formed to have a larger width at the first surface than at the second surface, the larger width at the first surface being no less than 100 microns. The method also includes placing a plurality of particles in the via, wherein at least some of the particles comprise a polymer and at least some of the particles comprise a metal. The method also includes heating the die and the particles in the via to cross-link at least part of the polymer in the via, and cooling the die to solidify the polymer and form a electrically conductive composite including the cross-linked polymer and the metal in the via. Other embodiments are described and claimed.
摘要翻译：描述了包括具有通孔的模具的电子组件的形成。在一个实施例中，一种方法包括提供包括第一表面和与第一表面相对的第二表面的Si模具，以及形成从第一表面延伸穿过Si模头的通孔到第二表面。通孔形成为在第一表面处具有比在第二表面处更大的宽度，第一表面处的较大宽度不小于100微米。该方法还包括将多个颗粒放置在通孔中，其中至少一些颗粒包含聚合物，并且至少一些颗粒包含金属。该方法还包括加热模头和通孔中的颗粒以将通孔中的至少一部分聚合物交联，并冷却模头以固化聚合物并形成包含交联聚合物和金属的导电复合材料在通道。描述和要求保护其他实施例。

5. 发明申请

US20090004317A1 HIGH THERMAL CONDUCTIVITY MOLDING COMPOUND FOR FLIP-CHIP PACKAGES 审中-公开
标题翻译：用于卷芯片包装的高热导率模塑料
公开(公告)号：US20090004317A1
公开(公告)日：2009-01-01
申请号：US11772200
申请日：2007-06-30
申请人： Xuejiao Hu , Leonel R. Arana , Robert M. Nickerson , Rahul N. Manepalli , Dingying Xu
发明人： Xuejiao Hu , Leonel R. Arana , Robert M. Nickerson , Rahul N. Manepalli , Dingying Xu
IPC分类号： B28B5/00 , C09K5/00
CPC分类号： C09K5/14
摘要： A molding compound for use in an integrated circuit package comprises an epoxy and a thermally conductive filler material. The thermally conductive filler material comprises between 70% and 95% of the molding compound and has a thermal conductivity between 10 W/m-K and 3000 W/m-K.
摘要翻译：用于集成电路封装的模塑料包括环氧树脂和导热填料。该导热填料包含70％至95％的模塑料，其导热率在10W / m-K至3000W / m-K之间。

6. 发明申请

US20150270235A1 DRY-REMOVABLE PROTECTIVE COATINGS 有权
标题翻译：可干式保护涂料
公开(公告)号：US20150270235A1
公开(公告)日：2015-09-24
申请号：US14218767
申请日：2014-03-18
申请人： Mihir A. Oka , Edward R. Prack , Dingying Xu , Saikumar Jayaraman
发明人： Mihir A. Oka , Edward R. Prack , Dingying Xu , Saikumar Jayaraman
IPC分类号： H01L23/00 , C09D179/04 , C08K11/00 , C09D181/04 , C09D179/08 , H01L21/02 , C09D125/02
CPC分类号： H01L24/11 , C08G73/22 , C09D5/20 , C09D7/63 , C09D179/04 , C09D179/08 , C09D181/04 , H01L21/02112 , H01L21/02118 , H01L21/02282 , H01L21/02318 , H01L21/31127 , H01L24/13 , H01L2224/05568 , H01L2224/11009 , H01L2224/11332 , H01L2224/1147 , H01L2224/116 , H01L2224/11849 , H01L2224/13023 , H01L2924/095 , H01L2924/12041 , H01L2924/12042 , H01L2924/00 , C08L83/04
摘要： Techniques are disclosed for protecting a surface using a dry-removable protective coating that does not require chemical solutions to be removed. In an embodiment, a protective layer is disposed on a surface. The protective layer is composed of one layer that adheres to the surface. The surface is then processed while the protective coating is on the surface. Thereafter, the protective layer is removed from the surface by separating the protective layer away from the surface without the use of chemical solutions.
摘要翻译：公开了用于使用不需要除去化学溶液的可干燥去除的保护涂层来保护表面的技术。在一个实施例中，保护层设置在表面上。保护层由附着在表面上的一层组成。然后在表面上保护表面进行处理。此后，通过将保护层从表面分离而不使用化学溶液，从表面除去保护层。

7. 发明授权

US08304065B2 Treatment for a microelectronic device and method of resisting damage to a microelectronic device using same 有权
标题翻译：微电子器件的处理以及使用该微电子器件对微电子器件的损伤的方法
公开(公告)号：US08304065B2
公开(公告)日：2012-11-06
申请号：US12655282
申请日：2009-12-28
申请人： Leonel Arana , Dingying Xu , Vijay Wakharkar , Wen Feng , Nirupama Chakrapani , Shankar Ganapathysubramanian , Jorge Sanchez , Mohit Mamodia
发明人： Leonel Arana , Dingying Xu , Vijay Wakharkar , Wen Feng , Nirupama Chakrapani , Shankar Ganapathysubramanian , Jorge Sanchez , Mohit Mamodia
IPC分类号： B32B7/02
CPC分类号： H01L21/6836 , H01L23/3164 , H01L24/81 , H01L2221/68327 , H01L2221/68377 , H01L2224/131 , H01L2224/16 , H01L2224/81007 , H01L2224/81815 , H01L2924/0001 , H01L2924/10253 , Y10T428/24124 , Y10T428/2419 , Y10T428/24942 , Y10T428/2495 , Y10T428/25 , Y10T428/2839 , Y10T428/2852 , Y10T428/31703 , H01L2924/014 , H01L2224/13099 , H01L2924/00
摘要： A treatment for a microelectronic device comprises a dicing tape (110) and a polymer composite film (120) having a pigment or other colorant added thereto and, in some embodiments, a pre-cure glass transition temperature greater than 50° Celsius. The film can comprise multiple layers, with one layer being tacky and the other layer non-tacky at a given temperature.
摘要翻译：微电子器件的处理包括切割带（110）和添加有颜料或其它着色剂的聚合物复合膜（120），并且在一些实施方案中，预固化玻璃化转变温度大于50℃。膜可以包括多层，一层是粘性的，另一层在给定温度下是非粘性的。

8. 发明申请

US20120074597A1 FLEXIBLE UNDERFILL COMPOSITIONS FOR ENHANCED RELIABILITY 有权
标题翻译：灵活的底层组合物，以提高可靠性
公开(公告)号：US20120074597A1
公开(公告)日：2012-03-29
申请号：US12890545
申请日：2010-09-24
申请人： Dingying Xu , Nisha Ananthakrishnan , Hong Dong , Rahul N. Manepalli , Nachiket Raravikar , Gregory S. Constable
发明人： Dingying Xu , Nisha Ananthakrishnan , Hong Dong , Rahul N. Manepalli , Nachiket Raravikar , Gregory S. Constable
IPC分类号： H01L23/48 , C09D7/12
CPC分类号： C08G59/02 , C07F7/0838 , C08G59/3254 , C08G59/38 , C08L23/0884 , H01L21/563 , H01L23/293 , H01L24/16 , H01L24/73 , H01L24/92 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2224/16227 , H01L2224/73204 , H01L2224/92125 , H01L2924/00014 , H01L2924/14 , H01L2924/15311 , H01L2924/3512 , Y10T428/31515 , H01L2924/00 , H01L2224/05599
摘要： Underfill materials for fabricating electronic devices are described. One embodiment includes an underfill composition including an epoxy mixture, an amine hardener component, and a filler. The epoxy mixture may include a first epoxy comprising a bisphenol epoxy, a second epoxy comprising a multifunctional epoxy, and a third epoxy comprising an aliphatic epoxy, the aliphatic epoxy comprising a silicone epoxy. The first, second, and third epoxies each have a different chemical structure. Other embodiments are described and claimed.
摘要翻译：描述了用于制造电子设备的底部填充材料。一个实施方案包括含有环氧混合物，胺硬化剂组分和填料的底部填充组合物。环氧混合物可包括包含双酚环氧树脂的第一环氧树脂，包含多官能环氧树脂的第二环氧树脂和包含脂族环氧树脂的第三环氧树脂，所述脂族环氧树脂包含硅氧烷环氧树脂。第一，第二和第三环氧树脂各自具有不同的化学结构。描述和要求保护其他实施例。

9. 发明申请

US20110159256A1 Treatment for a microelectronic device and method of resisting damage to a microelectronic device using same 有权
标题翻译：微电子器件的处理以及使用该微电子器件对微电子器件的损伤的方法
公开(公告)号：US20110159256A1
公开(公告)日：2011-06-30
申请号：US12655282
申请日：2009-12-28
申请人： Leonel Arana , Dingying Xu , Vijay Wakharkar , Wen Feng , Nirupama Chakrapani , Shankar Ganapathysubramanian , Jorge Sanchez , Mohit Mamodia
发明人： Leonel Arana , Dingying Xu , Vijay Wakharkar , Wen Feng , Nirupama Chakrapani , Shankar Ganapathysubramanian , Jorge Sanchez , Mohit Mamodia
IPC分类号： H01L21/60 , C09J7/02 , B32B7/02 , H01L21/56
CPC分类号： H01L21/6836 , H01L23/3164 , H01L24/81 , H01L2221/68327 , H01L2221/68377 , H01L2224/131 , H01L2224/16 , H01L2224/81007 , H01L2224/81815 , H01L2924/0001 , H01L2924/10253 , Y10T428/24124 , Y10T428/2419 , Y10T428/24942 , Y10T428/2495 , Y10T428/25 , Y10T428/2839 , Y10T428/2852 , Y10T428/31703 , H01L2924/014 , H01L2224/13099 , H01L2924/00
摘要： A treatment for a microelectronic device comprises a dicing tape (110) and a polymer composite film (120) having a pigment or other colorant added thereto and, in some embodiments, a pre-cure glass transition temperature greater than 50° Celsius. The film can comprise multiple layers, with one layer being tacky and the other layer non-tacky at a given temperature.
摘要翻译：微电子器件的处理包括切割带（110）和添加有颜料或其它着色剂的聚合物复合膜（120），并且在一些实施方案中，预固化玻璃化转变温度大于50℃。膜可以包括多层，一层是粘性的，另一层在给定温度下是非粘性的。

10. 发明申请

US20110151624A1 Coating for a microelectronic device, treatment comprising same, and method of managing a thermal profile of a microelectronic die 有权
标题翻译：用于微电子器件的涂层，包括其的处理以及管理微电子管芯的热分布的方法
公开(公告)号：US20110151624A1
公开(公告)日：2011-06-23
申请号：US12653791
申请日：2009-12-21
申请人： Dingying Xu , Leonel R. Arana , Nachiket R. Raravikar , Mohit Mamodia , Rajasekaran Swaminathan , Rahul Manepalli
发明人： Dingying Xu , Leonel R. Arana , Nachiket R. Raravikar , Mohit Mamodia , Rajasekaran Swaminathan , Rahul Manepalli
IPC分类号： H01L21/50 , B32B27/00
CPC分类号： H01L23/3737 , H01L24/81 , H01L2924/12042 , Y10T428/24942 , Y10T428/2495 , Y10T428/265 , Y10T428/3154 , H01L2924/00
摘要： A coating for a microelectronic device comprises a polymer film (131) containing a filler material (232). The polymer film has a thermal conductivity greater than 3 W/m·K and a thickness (133) that does not exceed 10 micrometers. The polymer film may be combined with a dicing tape (310) to form a treatment (300) that simplifies a manufacturing process for a microelectronic package (100) and may be used in order to manage a thermal profile of the microelectronic device.
摘要翻译：用于微电子器件的涂层包括含有填料（232）的聚合物膜（131）。聚合物膜的热导率大于3W / m·K，厚度（133）不超过10微米。聚合物膜可以与切割带（310）组合以形成简化微电子封装（100）的制造工艺的处理（300），并且可以使用该处理（300）来管理微电子器件的热分布。

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