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1. 发明申请

US20050012137A1 Nonvolatile memory cell having floating gate, control gate and separate erase gate, an array of such memory cells, and method of manufacturing 审中-公开
标题翻译：具有浮动栅极，控制栅极和单独的擦除栅极的非易失性存储单元，这种存储单元的阵列以及制造方法
公开(公告)号：US20050012137A1
公开(公告)日：2005-01-20
申请号：US10622855
申请日：2003-07-18
申请人： Amitay Levi , Pavel Klinger , Bomy Chen , Hieu Tran , Dana Lee , Jack Frayer
发明人： Amitay Levi , Pavel Klinger , Bomy Chen , Hieu Tran , Dana Lee , Jack Frayer
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/788 , H01L21/8238
CPC分类号： H01L27/11521 , H01L27/115 , H01L29/42328 , H01L29/7885
摘要： A nonvolatile memory cell having a floating gate for the storage of charges thereon has a control gate and a separate erase gate. The cell is programmed by hot channel electron injection and is erased by poly to poly Fowler-Nordheim tunneling. A method for making an array of unidirectional cells in a planar substrate, as well as an array of bidirectional cells in a substrate having a trench, is disclosed. An array of such cells and a method of making such an array is also disclosed.
摘要翻译：具有用于存储电荷的浮动栅极的非易失性存储单元具有控制栅极和单独的擦除栅极。该电池通过热通道电子注入进行编程，并被poly-poly Fowler-Nordheim隧道擦除。公开了一种用于在平面基板中制造单向单元阵列的方法，以及在具有沟槽的基板中的双向单元阵列。还公开了这样的单元阵列和制造这种阵列的方法。

2. 发明申请

US20050213386A1 Nonvolatile memory cell having floating gate, control gate and separate erase gate, an array of such memory cells, and method of manufacturing 有权
公开(公告)号：US20050213386A1
公开(公告)日：2005-09-29
申请号：US11078562
申请日：2005-02-28
申请人： Amitay Levi , Pavel Klinger , Bomy Chen , Hieu Tran , Dana Lee , Jack Frayer
发明人： Amitay Levi , Pavel Klinger , Bomy Chen , Hieu Tran , Dana Lee , Jack Frayer
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/788 , G11C16/04
CPC分类号： H01L27/11521 , H01L27/115 , H01L29/42328 , H01L29/7885
摘要： A nonvolatile memory cell having a floating gate for the storage of charges thereon has a control gate and a separate erase gate. The cell is programmed by hot channel electron injection and is erased by poly to poly Fowler-Nordheim tunneling. A method for making an array of unidirectional cells in a planar substrate, as well as an array of bidirectional cells in a substrate having a trench, is disclosed. An array of such cells and a method of making such an array is also disclosed.

3. 发明授权

US07227217B2 Nonvolatile memory cell having floating gate, control gate and separate erase gate, an array of such memory cells, and method of manufacturing 有权
标题翻译：具有浮动栅极，控制栅极和单独的擦除栅极的非易失性存储单元，这种存储单元的阵列以及制造方法
公开(公告)号：US07227217B2
公开(公告)日：2007-06-05
申请号：US11078562
申请日：2005-02-28
申请人： Amitay Levi , Pavel Klinger , Bomy Chen , Hieu Van Tran , Dana Lee , Jack E. Frayer
发明人： Amitay Levi , Pavel Klinger , Bomy Chen , Hieu Van Tran , Dana Lee , Jack E. Frayer
IPC分类号： H01L29/788 , H01L29/76
CPC分类号： H01L27/11521 , H01L27/115 , H01L29/42328 , H01L29/7885
摘要： A nonvolatile memory cell having a floating gate for the storage of charges thereon has a control gate and a separate erase gate. The cell is programmed by hot channel electron injection and is erased by poly to poly Fowler-Nordheim tunneling. A method for making an array of unidirectional cells in a planar substrate, as well as an array of bidirectional cells in a substrate having a trench, is disclosed. An array of such cells and a method of making such an array is also disclosed.
摘要翻译：具有用于存储电荷的浮动栅极的非易失性存储单元具有控制栅极和单独的擦除栅极。该电池通过热通道电子注入进行编程，并被poly-poly Fowler-Nordheim隧道擦除。公开了一种用于在平面基板中制造单向单元阵列的方法，以及在具有沟槽的基板中的双向单元阵列。还公开了这样的单元阵列和制造这种阵列的方法。

4. 发明申请

US20050104116A1 Stacked gate memory cell with erase to gate, array, and method of manufacturing 有权
标题翻译：具有擦除到栅极，阵列和制造方法的堆叠栅极存储单元
公开(公告)号：US20050104116A1
公开(公告)日：2005-05-19
申请号：US10714243
申请日：2003-11-13
申请人： Bomy Chen , Hieu Tran , Dana Lee , Jack Frayer
发明人： Bomy Chen , Hieu Tran , Dana Lee , Jack Frayer
IPC分类号： G11C16/04 , H01L21/8247 , H01L27/115 , H01L29/788
CPC分类号： H01L27/11521 , G11C16/0491 , H01L27/115 , H01L29/7885
摘要： A stacked gate nonvolatile memory floating gate device has a control gate. Programming of the cell in the array is accomplished by hot channel electron injection from the drain to the floating gate. Erasure occurs by Fowler-Nordheim tunneling of electrons from the floating gate to the control gate. Finally, to increase the density, each cell can be made in a trench.
摘要翻译：堆叠式非易失性存储器浮栅器件具有控制栅极。通过从漏极到浮动栅极的热通道电子注入来实现阵列中的单元的编程。擦除由Fowler-Nordheim发生，电子从浮动栅极隧道到控制门。最后，为了增加密度，可以在沟槽中制造每个单元。

5. 发明申请

US20060091449A1 Stacked gate memory cell with erase to gate, array, and method of manufacturing 有权
标题翻译：具有擦除到栅极，阵列和制造方法的堆叠栅极存储单元
公开(公告)号：US20060091449A1
公开(公告)日：2006-05-04
申请号：US11303567
申请日：2005-12-15
申请人： Bomy Chen , Hieu Tran , Dana Lee , Jack Frayer
发明人： Bomy Chen , Hieu Tran , Dana Lee , Jack Frayer
IPC分类号： H01L29/788
CPC分类号： H01L27/11521 , G11C16/0491 , H01L27/115 , H01L29/7885
摘要： A stacked gate nonvolatile memory floating gate device has a control gate. Programming of the cell in the array is accomplished by hot channel electron injection from the drain to the floating gate. Erasure occurs by Fowler-Nordheim tunneling of electrons from the floating gate to the control gate. Finally, to increase the density, each cell can be made in a trench.
摘要翻译：堆叠式非易失性存储器浮栅器件具有控制栅极。通过从漏极到浮动栅极的热通道电子注入来实现阵列中的单元的编程。擦除由Fowler-Nordheim发生，电子从浮动栅极隧道到控制门。最后，为了增加密度，可以在沟槽中制造每个单元。

6. 发明申请

US20070076489A1 Word line voltage boosting circuit and a memory array incorporating same 有权
公开(公告)号：US20070076489A1
公开(公告)日：2007-04-05
申请号：US11241582
申请日：2005-09-30
申请人： Ya-Fen Lin , Elbert Lin , Hieu Tran , Jack Frayer , Bomy Chen
发明人： Ya-Fen Lin , Elbert Lin , Hieu Tran , Jack Frayer , Bomy Chen
IPC分类号： G11C11/34
CPC分类号： G11C8/08 , G11C16/08
摘要： A first embodiment of a word line voltage boosting circuit for use with an array of non-volatile memory cells has a capacitor, having two ends, connected to the word line. One end of the capacitor is electrically connected to the word line. The other end of the capacitor is electrically connected to a first voltage source. The word line is also connected through a switch to a second source voltage source. A sequencing circuit activates the switch such that the word line is connected to the second voltage source, and the other end of the capacitor is not connected to the first voltage source. Then the sequencing circuit causes the switch to disconnect the word line from the second voltage source, and connect the second end of the capacitor to the first voltage source. The alternate switching of the connection boosts the voltage on the word line. In a second embodiment, a first word line is electrically connected to a first switch to a first voltage source. An adjacent word line, capacitively coupled to the first word line, is electrically connected to a second switch to a second voltage source. A sequencing circuit activates the first switch and the second switch such that the first word line is connected to the first voltage source, and the second word line is disconnected from the second voltage source. Then the sequencing circuit causes the first switch to disconnect the first word line from the first voltage source, and causes the second word line to be electrically connected to the second voltage source. The alternate switching of the connection boosts the voltage on the first word line, caused by its capacitive coupling to the second word line. A boosted voltage on the word line may be used to improve cycling and yield, where the memory cells of the array are of the floating gate type and erase through the mechanism of Fowler-Nordheim tunneling from the floating gate to a control gate which is connected to the word line.

7. 发明授权

US07151021B2 Bi-directional read/program non-volatile floating gate memory cell and array thereof, and method of formation 有权
标题翻译：双向读/写非易失性浮栅存储单元及其阵列及其形成方法
公开(公告)号：US07151021B2
公开(公告)日：2006-12-19
申请号：US11111244
申请日：2005-04-20
申请人： Bomy Chen , Jack Frayer , Dana Lee
发明人： Bomy Chen , Jack Frayer , Dana Lee
IPC分类号： H01L21/8238
CPC分类号： H01L27/11521 , G11C16/0458 , H01L27/115 , H01L29/42336 , H01L29/7887
摘要： A bi-directional read/program non-volatile memory cell and array is capable of achieving high density. Each memory cell has two spaced floating gates for storage of charges thereon. The cell has spaced apart source/drain regions with a channel therebetween, with the channel having three portions. One of the floating gate is over a first portion; another floating gate is over a second portion, and a gate electrode controls the conduction of the channel in the third portion between the first and second portions. A control gate is connected to each of the source/drain regions, and is also capacitively coupled to the floating gate. The cell programs by hot channel electron injection, and erases by Fowler-Nordheim tunneling of electrons from the floating gate to the gate electrode. Bi-directional read permits the cell to be programmed to store bits, with one bit in each floating gate.
摘要翻译：双向读/写非易失性存储单元和阵列能够实现高密度。每个存储单元具有两个间隔开的浮动栅极，用于在其上存储电荷。电池具有间隔开的源极/漏极区域，其间具有沟道，沟道具有三个部分。浮动门之一在第一部分之上; 另一个浮栅位于第二部分之上，栅电极控制第一和第二部分之间的第三部分中的沟道的导通。控制栅极连接到每个源极/漏极区域，并且还电容耦合到浮动栅极。通过热通道电子注入的电池程序，并通过Fowler-Nordheim将电子从浮动栅极隧穿到栅电极而擦除。双向读取允许将单元编程为存储位，每个浮动栅极中有一位。

8. 发明申请

US20050237807A1 Bi-directional read/program non-volatile floating gate memory cell and array thereof, and method of formation 有权
标题翻译：双向读/写非易失性浮栅存储单元及其阵列及其形成方法
公开(公告)号：US20050237807A1
公开(公告)日：2005-10-27
申请号：US11111244
申请日：2005-04-20
申请人： Bomy Chen , Jack Frayer , Dana Lee
发明人： Bomy Chen , Jack Frayer , Dana Lee
IPC分类号： G11C16/04 , H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , G11C16/0458 , H01L27/115 , H01L29/42336 , H01L29/7887
摘要： A bi-directional read/program non-volatile memory cell and array is capable of achieving high density. Each memory cell has two spaced floating gates for storage of charges thereon. The cell has spaced apart source/drain regions with a channel therebetween, with the channel having three portions. One of the floating gate is over a first portion; another floating gate is over a second portion, and a gate electrode controls the conduction of the channel in the third portion between the first and second portions. A control gate is connected to each of the source/drain regions, and is also capacitively coupled to the floating gate. The cell programs by hot channel electron injection, and erases by Fowler-Nordheim tunneling of electrons from the floating gate to the gate electrode. Bi-directional read permits the cell to be programmed to store bits, with one bit in each floating gate.
摘要翻译：双向读/写非易失性存储单元和阵列能够实现高密度。每个存储单元具有两个间隔开的浮动栅极，用于在其上存储电荷。电池具有间隔开的源极/漏极区域，其间具有沟道，沟道具有三个部分。浮动门之一在第一部分之上; 另一个浮栅位于第二部分之上，栅电极控制第一和第二部分之间的第三部分中的沟道的导通。控制栅极连接到每个源极/漏极区域，并且还电容耦合到浮动栅极。通过热通道电子注入的电池程序，并通过Fowler-Nordheim将电子从浮动栅极隧穿到栅电极而擦除。双向读取允许将单元编程为存储位，每个浮动栅极中有一位。

9. 发明授权

US06936883B2 Bi-directional read/program non-volatile floating gate memory cell and array thereof, and method of formation 有权
公开(公告)号：US06936883B2
公开(公告)日：2005-08-30
申请号：US10409333
申请日：2003-04-07
申请人： Bomy Chen , Jack Frayer , Dana Lee
发明人： Bomy Chen , Jack Frayer , Dana Lee
IPC分类号： G11C16/04 , H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , G11C16/0458 , H01L27/115 , H01L29/42336 , H01L29/7887
摘要： A bi-directional read/program non-volatile memory cell and array is capable of achieving high density. Each memory cell has two spaced floating gates for storage of charges thereon. The cell has spaced apart source/drain regions with a channel therebetween, with the channel having three portions. One of the floating gate is over a first portion; another floating gate is over a second portion, and a gate electrode controls the conduction of the channel in the third portion between the first and second portions. A control gate is connected to each of the source/drain regions, and is also capacitively coupled to the floating gate. The cell programs by hot channel electron injection, and erases by Fowler-Nordheim tunneling of electrons from the floating gate to the gate electrode. Bi-directional read permits the cell to be programmed to store bits, with one bit in each floating gate.

10. 发明申请

US20050045940A1 SELF-ALIGNED METHOD OF FORMING A SEMICONDUCTOR MEMORY ARRAY OF FLOATING GATE MEMORY CELLS WITH BURIED FLOATING GATE, AND A MEMORY ARRAY MADE THEREBY 有权
标题翻译：形成具有浮动门的浮动存储器存储器的半导体存储器阵列的自对准方法及其存储器阵列
公开(公告)号：US20050045940A1
公开(公告)日：2005-03-03
申请号：US10653015
申请日：2003-08-28
申请人： Bomy Chen , Dana Lee , Hieu Tran
发明人： Bomy Chen , Dana Lee , Hieu Tran
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/788
CPC分类号： H01L27/11556 , H01L27/115 , H01L29/42336 , H01L29/7885
摘要： An array of floating gate memory cells, and a method of making same, where each pair of memory cells includes a pair of trenches formed into a surface of a semiconductor substrate, with a strip of the substrate disposed therebetween, a source region formed in the substrate strip, a pair of drain regions, a pair of channel regions each extending between the source region and one of the drain regions, a pair of floating gates each disposed in one of the trenches, and a pair of control gates. Each channel region has a first portion disposed in the substrate strip and extending along one of the trenches, a second portion extending underneath the one trench, a third portion extending along the one trench, and a fourth portion extending along the substrate surface and under one of the control gates.
摘要翻译：一种浮动栅极存储单元的阵列及其制造方法，其中每对存储单元包括形成在半导体衬底的表面中的一对沟槽，其中衬底的条带设置在其间，源区域形成在衬底条，一对漏极区，一对沟道区，每个沟道区各自在源极区和漏极区之一之间延伸;一对浮置栅极，分别设置在一个沟槽中，以及一对控制栅极。每个通道区域具有设置在衬底条中并沿其中一个沟槽延伸的第一部分，在一个沟槽下面延伸的第二部分，沿该沟槽延伸的第三部分，以及沿衬底表面延伸的第四部分的控制门。

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