会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 6. 发明授权
    • Method and apparatus for poly gate CD control
    • 多门CD控制方法和装置
    • US07035696B1
    • 2006-04-25
    • US10189930
    • 2002-07-03
    • Ali SadeghiSukesh PatelMark FreelandOle Krogh
    • Ali SadeghiSukesh PatelMark FreelandOle Krogh
    • G06F19/00
    • G05B17/02
    • Systems and methods are provided that facilitate semiconductor processing, including etch processes. The invention provides real-time two-dimensional etch rate control. Prior to starting an etch process, a control model is selected that relates to the etch process. A formula or function description is developed from the model and solved to obtain process parameter values that are predicted to produce the desired etch rates. During the fabrication etch process, critical dimension measurements of a polysilicon gate are obtained. From these measurements, the etch process is modified so as to achieve a desired horizontal etch rate and a desired vertical etch rate. The etch process results in a polysilicon gate having a desired rectangular profile.
    • 提供了促进半导体处理(包括蚀刻工艺)的系统和方法。 本发明提供实时二维蚀刻速率控制。 在开始蚀刻工艺之前,选择与蚀刻工艺相关的控制模型。 公式或函数描述是从模型开发出来的,并被解决以获得被预测产生期望的蚀刻速率的工艺参数值。 在制造蚀刻工艺期间,获得多晶硅栅极的临界尺寸测量。 从这些测量中,蚀刻工艺被修改以便实现期望的水平蚀刻速率和期望的垂直蚀刻速率。 蚀刻工艺导致具有期望的矩形轮廓的多晶硅栅极。