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    • 6. 发明申请
    • Oxide films with nanodot flux pinning centers
    • 具有纳多点磁通钉扎中心的氧化膜
    • US20050159298A1
    • 2005-07-21
    • US10758710
    • 2004-01-16
    • Martin RupichThomas KodenkandathWei ZhangXiaoping Li
    • Martin RupichThomas KodenkandathWei ZhangXiaoping Li
    • B01J29/00H01L39/24
    • H01L39/2483H01L39/2425
    • A method for producing a thin film includes disposing a precursor solution onto a substrate to form a precursor film. The precursor solution contains precursor components to a rare-earth/alkaline-earth-metal/transition-metal oxide including a salt of a rare earth element, a salt of an alkaline earth metal, and a salt of a transition metal in one or more solvents, wherein at least one of the salts is a fluoride-containing salt. The precursor solution also contains an additive component comprising one or more metal compounds capable of forming a second phase nanoparticle, either alone or in combination with one or more of the precursor components of the precursor solution or a dopant component comprising one or more metal compounds capable of substituting for an element of the rare-earth/alkaline-earth-metal/transition-metal oxide, and treating the precursor film to form an intermediate metal oxyfluoride including the rare earth, the alkaline earth metal, the transition metal and the additive metal or dopant metal of the precursor solution.
    • 制造薄膜的方法包括将前体溶液设置在基板上以形成前体膜。 前体溶液含有稀土/碱土金属/过渡金属氧化物的前体成分,所述稀土/碱土金属/过渡金属氧化物包括稀土元素的盐,碱土金属的盐和过渡金属的盐在一个或多个 溶剂,其中至少一种盐是含氟化物的盐。 前体溶液还包含添加剂组分,其包含一种或多种能够形成第二相纳米颗粒的金属化合物,单独或与前体溶液的一种或多种前体组分或包含一种或多种金属化合物的掺杂剂组分组合 代替稀土/碱土金属/过渡金属氧化物的元素,并处理前体膜以形成包括稀土,碱土金属,过渡金属和添加金属的中间体金属氟氧化物 或前体溶液的掺杂剂金属。