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1. 发明申请

US20070026248A1 Doped Y2O3 buffer layers for laminated conductors 失效
标题翻译：用于层叠导体的掺杂的Y2O3缓冲层
公开(公告)号：US20070026248A1
公开(公告)日：2007-02-01
申请号：US11192488
申请日：2005-07-29
申请人： Mariappan Paranthaman , Urs Schoop , Amit Goyal , Cornelis Thieme , Darren Verebelyi , Martin Rupich
发明人： Mariappan Paranthaman , Urs Schoop , Amit Goyal , Cornelis Thieme , Darren Verebelyi , Martin Rupich
IPC分类号： B32B15/04 , B32B9/00
CPC分类号： C23C14/083 , H01L39/2461
摘要： A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the metallic substrate, the biaxially textured buffer layer comprising Y2O3 and a dopant for blocking cation diffusion through the Y2O3, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.
摘要翻译：层压导体包括具有表面的金属基底，由金属基底的表面支撑的双轴织构缓冲层，包含Y 2 O 3 3的双轴织构缓冲层和用于阻止通过Y 2 O 3 3阳离子扩散的掺杂剂和由双轴织构缓冲层支撑的双轴织构化导体层。

2. 发明申请

US20070026247A1 Doped LZO buffer layers for laminated conductors 失效
标题翻译：用于层叠导体的掺杂的LZO缓冲层
公开(公告)号：US20070026247A1
公开(公告)日：2007-02-01
申请号：US11192487
申请日：2005-07-29
申请人： Mariappan Paranthaman , Urs Schoop , Amit Goyal , Cornelis Hans Thieme , Darren Verebelyi , Martin Rupich
发明人： Mariappan Paranthaman , Urs Schoop , Amit Goyal , Cornelis Hans Thieme , Darren Verebelyi , Martin Rupich
IPC分类号： B32B15/04 , B32B9/00
CPC分类号： H01L39/2461
摘要： A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the substrate, the biaxially textured buffer layer comprising LZO and a dopant for mitigating metal diffusion through the LZO, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.
摘要翻译：层叠导体包括具有表面的金属基板，由基板的表面支撑的双轴织构的缓冲层，包含LZO的双轴织构缓冲层和用于减轻通过LZO的金属扩散的掺杂剂，以及双轴织构化的导体层，双轴纹理缓冲层。

3. 发明申请

US20060073979A1 Architecture for high temperature superconductor wire 有权
标题翻译：高温超导体电线架构
公开(公告)号：US20060073979A1
公开(公告)日：2006-04-06
申请号：US11193262
申请日：2005-07-29
申请人： Cornelis Thieme , Alexis Malozemoff , Martin Rupich , Urs-Detlev Schoop , Elliott Thompson , Darren Verebelyi
发明人： Cornelis Thieme , Alexis Malozemoff , Martin Rupich , Urs-Detlev Schoop , Elliott Thompson , Darren Verebelyi
IPC分类号： H01L39/24
CPC分类号： H01L39/143 , H01L39/248 , Y10S428/93 , Y10S505/701 , Y10S505/702
摘要： A laminated superconductor wire includes a superconductor wire assembly, which includes a first superconductor insert comprising a first high temperature superconductor layer overlaying a first substrate and a second superconductor insert comprising a second high temperature superconductor layer overlaying a second substrate. The first and second superconductor inserts are joined together at their respective substrates. An electrically conductive structure substantially surrounds the superconductor wire assembly.
摘要翻译：层压超导体线包括超导体线组件，其包括第一超导体插入件，其包括覆盖第一衬底的第一高温超导体层和包含覆盖第二衬底的第二高温超导体层的第二超导体插入件。第一和第二超导体插入物在它们各自的基底处连接在一起。导电结构基本上围绕超导线组件。

4. 发明申请

US20050217568A1 Deposition of buffer layers on textured metal surfaces 有权
标题翻译：在纹理金属表面上沉积缓冲层
公开(公告)号：US20050217568A1
公开(公告)日：2005-10-06
申请号：US10812676
申请日：2004-03-30
申请人： Martin Rupich , Urs-Detlev Schoop , Darren Verebelyi , Thomas Kodenkandath , Xiaoping Li
发明人： Martin Rupich , Urs-Detlev Schoop , Darren Verebelyi , Thomas Kodenkandath , Xiaoping Li
IPC分类号： B32B15/18 , C30B7/00 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14 , C30B29/16 , C30B29/22 , H01L39/12 , H01L39/24
CPC分类号： C30B29/16 , C30B7/005 , C30B29/22 , H01L39/2461 , Y10S505/929
摘要： A method of making a multilayer article includes depositing a first material on the surface of a metal substrate to form a seed layer of the first material, the first material being deposited under reducing conditions relative to the metal substrate, and then epitaxially depositing a second material on a surface of the seed layer, wherein the second material is deposited from a solution-based precursor under second conditions that are more oxidizing than the reducing conditions used in the deposition of the first material.
摘要翻译：制造多层制品的方法包括在金属基材的表面上沉积第一材料以形成第一材料的籽晶层，第一材料相对于金属基底在还原条件下沉积，然后外延沉积第二材料在种子层的表面上，其中第二材料在比在沉积第一材料中使用的还原条件更加氧化的第二条件下从基于溶液的前体沉积。

5. 发明申请

US20050065035A1 Superconductor methods and reactors 审中-公开
标题翻译：超导体方法和反应器
公开(公告)号：US20050065035A1
公开(公告)日：2005-03-24
申请号：US10858309
申请日：2004-06-01
申请人： Martin Rupich , Darren Verebelyi , Xiaoping Li , Wei Zhang , Urs-Detlev Schoop , Joseph Lynch
发明人： Martin Rupich , Darren Verebelyi , Xiaoping Li , Wei Zhang , Urs-Detlev Schoop , Joseph Lynch
IPC分类号： H01L39/24 , B05D5/12
CPC分类号： H01L39/2451
摘要： Superconductor reactors, methods and systems are disclosed.
摘要翻译：公开了超导体反应器，方法和系统。

6. 发明申请

US20060073975A1 Stacked filamentary coated superconductors 有权
标题翻译：堆叠的丝状超导体
公开(公告)号：US20060073975A1
公开(公告)日：2006-04-06
申请号：US10955801
申请日：2004-09-29
申请人： Cornelis Thieme , Martin Rupich
发明人： Cornelis Thieme , Martin Rupich
IPC分类号： H01L39/12
CPC分类号： H01L39/248 , B33Y80/00 , H01L39/143 , Y10T29/49014
摘要： An elongated article comprising a first layer of oxide superconductor filaments extending substantially along the length of the elongated article and spaced apart from one another across the width of the elongated substrate; a second layer of oxide superconductor filaments extending substantially along the length of the elongated article and spaced apart from one another across the width of the elongated article, wherein the first filament layer is positioned above the second filament layer; and a barrier layer positioned between the first and second filament layers, wherein the filaments of the first and second filament layers are positioned such that at least one filament of the first layer crosses at least one filament of the second layer.
摘要翻译：细长制品包括基本上沿着细长制品的长度延伸的第一层氧化物超导体细丝，并跨过细长衬底的宽度彼此间隔开; 第二层氧化物超导体细丝基本上沿着细长制品的长度延伸并跨过细长制品的宽度彼此间隔开，其中第一细丝层位于第二细丝层上方; 以及位于所述第一和第二细丝层之间的阻挡层，其中所述第一和第二细丝层的长丝被定位成使得所述第一层的至少一个细丝与所述第二层的至少一个细丝交叉。

7. 发明申请

US20060040830A1 Low ac loss filamentary coated superconductors 失效
公开(公告)号：US20060040830A1
公开(公告)日：2006-02-23
申请号：US10955875
申请日：2004-09-29
申请人： Cornelis Thieme , Martin Rupich , John Scudiere , Oleg Chevtchenko
发明人： Cornelis Thieme , Martin Rupich , John Scudiere , Oleg Chevtchenko
IPC分类号： H01B12/00
CPC分类号： H01L39/143 , B33Y80/00 , H01L39/248 , Y10T29/49014
摘要： An article having low ac loss includes an elongated substrate having a length and a width; and a plurality of filaments comprising an oxide superconductor extending substantially along the length of the elongated substrate and spaced apart from one other filaments across the width of the elongated substrate, wherein at least one filament crosses over at least one other filament such that the at least one filament occupies a first position across the width of the elongated substrate before the crossover and a second position across the width of the elongated substrate after crossover.

8. 发明申请

US20060094603A1 Thick superconductor films with improved performance 有权
公开(公告)号：US20060094603A1
公开(公告)日：2006-05-04
申请号：US11241636
申请日：2005-09-30
申请人： Xiaoping Li , Thomas Kodenkandath , Edward Siegal , Wei Zhang , Martin Rupich , Yibing Huang
发明人： Xiaoping Li , Thomas Kodenkandath , Edward Siegal , Wei Zhang , Martin Rupich , Yibing Huang
IPC分类号： H01L39/24
CPC分类号： H01L39/2425 , C23C18/1216 , C23C18/1225 , C23C18/127 , H01L39/2483 , Y10T29/49014
摘要： A method for producing a thick film includes disposing a precursor solution onto a substrate to form a precursor film. The precursor solution contains precursor components to a rare-earth/alkaline-earth-metal/transition-metal oxide including a salt of a rare earth element, a salt of an alkaline earth metal, and a salt of a transition metal in one or more solvents, wherein at least one of the salts is a fluoride-containing salt, and wherein the ratio of the transition metal to the alkaline earth metal is greater than 1.5. The precursor solution is treated to form a rare earth-alkaline earth-metal transition metal oxide superconductor film having a thickness greater than 0.8 μm. precursor solution.

9. 发明申请

US20060051600A1 Precursor solutions and methods of using same 审中-公开
公开(公告)号：US20060051600A1
公开(公告)日：2006-03-09
申请号：US10991738
申请日：2004-11-18
申请人： Martin Rupich , Thomas Kodenkandath
发明人： Martin Rupich , Thomas Kodenkandath
IPC分类号： B32B15/04 , B32B19/00 , B32B9/00
CPC分类号： C30B29/22 , C30B7/005 , H01L39/2425 , H01L39/2451 , Y10S505/734
摘要： Superconductor precursor solutions are disclosed. The precursor solutions contain, for example, a salt of a rare earth metal, a salt of an alkaline earth metal and a salt of a transition metal. The precursor solutions can optionally include a Lewis base. The precursor solutions can be processed relatively quickly to provide a relatively thick and good quality intermediate of a rare earth metal-alkaline earth metal-transition metal oxide.

10. 发明申请

US20050159298A1 Oxide films with nanodot flux pinning centers 审中-公开
标题翻译：具有纳多点磁通钉扎中心的氧化膜
公开(公告)号：US20050159298A1
公开(公告)日：2005-07-21
申请号：US10758710
申请日：2004-01-16
申请人： Martin Rupich , Thomas Kodenkandath , Wei Zhang , Xiaoping Li
发明人： Martin Rupich , Thomas Kodenkandath , Wei Zhang , Xiaoping Li
IPC分类号： B01J29/00 , H01L39/24
CPC分类号： H01L39/2483 , H01L39/2425
摘要： A method for producing a thin film includes disposing a precursor solution onto a substrate to form a precursor film. The precursor solution contains precursor components to a rare-earth/alkaline-earth-metal/transition-metal oxide including a salt of a rare earth element, a salt of an alkaline earth metal, and a salt of a transition metal in one or more solvents, wherein at least one of the salts is a fluoride-containing salt. The precursor solution also contains an additive component comprising one or more metal compounds capable of forming a second phase nanoparticle, either alone or in combination with one or more of the precursor components of the precursor solution or a dopant component comprising one or more metal compounds capable of substituting for an element of the rare-earth/alkaline-earth-metal/transition-metal oxide, and treating the precursor film to form an intermediate metal oxyfluoride including the rare earth, the alkaline earth metal, the transition metal and the additive metal or dopant metal of the precursor solution.
摘要翻译：制造薄膜的方法包括将前体溶液设置在基板上以形成前体膜。前体溶液含有稀土/碱土金属/过渡金属氧化物的前体成分，所述稀土/碱土金属/过渡金属氧化物包括稀土元素的盐，碱土金属的盐和过渡金属的盐在一个或多个溶剂，其中至少一种盐是含氟化物的盐。前体溶液还包含添加剂组分，其包含一种或多种能够形成第二相纳米颗粒的金属化合物，单独或与前体溶液的一种或多种前体组分或包含一种或多种金属化合物的掺杂剂组分组合代替稀土/碱土金属/过渡金属氧化物的元素，并处理前体膜以形成包括稀土，碱土金属，过渡金属和添加金属的中间体金属氟氧化物或前体溶液的掺杂剂金属。

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