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1. 发明授权

US08605257B2 Projection system with compensation of intensity variations and compensation element therefor 有权
标题翻译：具有强度变化补偿和补偿要素的投影系统
公开(公告)号：US08605257B2
公开(公告)日：2013-12-10
申请号：US11628356
申请日：2005-06-03
申请人： Alexandra Pazidis , Reiner Garreis , Michael Totzeck , Heiko Feldmann , Paul Graeupner , Hans-Juergen Rostalski , Wolfgang Singer , Guenter Scheible , Sigrid Scheible
发明人： Patrick Scheible , Alexandra Pazidis , Reiner Garreis , Michael Totzeck , Heiko Feldmann , Paul Graeupner , Hans-Juergen Rostalski , Wolfgang Singer
IPC分类号： G03B27/72 , G03B27/68
CPC分类号： G02B13/02 , G02B17/0812 , G02B17/0892 , G03F7/70308
摘要： In a projection objective for imaging a pattern arranged in the object plane of the projection objective into the image plane of the projection objective, at least one optical component is provided which has a substrate in which at least one substrate surface is covered with an interference layer system having a great spatial modulation of the reflectance and/or of the transmittance over a usable cross section of the optical component, the modulation being adapted to a spatial transmission distribution of the remaining components of the projection objective in such a way that an intensity distribution of the radiation that is measured in a pupil surface has a substantially reduced spatial modulation in comparison with a projection objective without the interference layer system.
摘要翻译：在将投影物镜的物平面中布置的图案成像到投影物镜的像平面中的投影物镜中，提供至少一个光学部件，该光学元件具有基板，其中至少一个基板表面被干涉层覆盖系统具有在光学部件的可用横截面上的反射率和/或透射率的大的空间调制，该调制适于投射物镜的其余部件的空间传输分布，使得强度分布与没有干涉层系统的投射物镜相比，在瞳孔表面中测量的辐射具有显着降低的空间调制。

2. 发明申请

US20080094599A1 Projection System with Compensation of Intensity Variations and Compensation Element Therefor 有权
标题翻译：具有强度变化和补偿要素补偿的投影系统
公开(公告)号：US20080094599A1
公开(公告)日：2008-04-24
申请号：US11628356
申请日：2005-06-03
申请人： Patrick Scheible , Alexandra Pazidis , Reiner Garreis , Michael Totzeck , Heiko Feldmann , Paul Graeupner , Hans-Juergen Rostalski , Wolfgang Singer
发明人： Patrick Scheible , Alexandra Pazidis , Reiner Garreis , Michael Totzeck , Heiko Feldmann , Paul Graeupner , Hans-Juergen Rostalski , Wolfgang Singer
IPC分类号： G03B27/72 , G03B27/54
CPC分类号： G02B13/02 , G02B17/0812 , G02B17/0892 , G03F7/70308
摘要： In a projection objective for imaging a pattern arranged in the object plane of the projection objective into the image plane of the projection objective, at least one optical component is provided which has a substrate in which at least one substrate surface is covered with an interference layer system having a great spatial modulation of the reflectance and/or of the transmittance over a usable cross section of the optical component, the modulation being adapted to a spatial transmission distribution of the remaining components of the projection objective in such a way that an intensity distribution of the radiation that is measured in a pupil surface has a substantially reduced spatial modulation in comparison with a projection objective without the interference layer system.
摘要翻译：在将投影物镜的物平面中布置的图案成像到投影物镜的像平面中的投影物镜中，提供至少一个光学部件，该光学元件具有基板，其中至少一个基板表面被干涉层覆盖系统具有在光学部件的可用横截面上的反射率和/或透射率的大的空间调制，该调制适于投射物镜的其余部件的空间传输分布，使得强度分布与没有干涉层系统的投射物镜相比，在瞳孔表面中测量的辐射具有显着降低的空间调制。

3. 发明申请

US20120092637A1 MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权
标题翻译：微波投影曝光装置
公开(公告)号：US20120092637A1
公开(公告)日：2012-04-19
申请号：US13333350
申请日：2011-12-21
申请人： Michael Totzeck , Aksel Goehnermeier , Wolfgang Singer , Helmut Beierl , Heiko Feldmann , Hans-Juergen Mann , Jochen Hetzler
发明人： Michael Totzeck , Aksel Goehnermeier , Wolfgang Singer , Helmut Beierl , Heiko Feldmann , Hans-Juergen Mann , Jochen Hetzler
IPC分类号： G03B27/54
CPC分类号： G03F7/70308 , G03F7/70216 , G03F7/70566
摘要： The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.
摘要翻译：本发明涉及微光刻投影曝光装置和微光刻投影曝光装置，以及通过该方法制造的相关部件，方法和制品。微光刻投影曝光装置包括照明系统和投影物镜。照明系统可以照亮布置在投影物镜的物平面中的掩模。掩模可以具有待成像的结构。该方法可以包括用光照射照明系统的光瞳平面。该方法还可以包括在投影物镜的平面内修改通过该平面的光的相位，幅度和/或极化。可以以相互不同的方式对至少两个衍射级进行修改。与没有修改的方法相比，在结构成像中获得的掩模诱导的图像对比损失可以减少。

4. 发明授权

US08107054B2 Microlithographic projection exposure apparatus 有权
标题翻译：微光刻投影曝光装置
公开(公告)号：US08107054B2
公开(公告)日：2012-01-31
申请号：US12210514
申请日：2008-09-15
申请人： Michael Totzeck , Aksel Goehnermeier , Wolfgang Singer , Helmut Beierl , Heiko Feldmann , Hans-Juergen Mann , Jochen Hetzler
发明人： Michael Totzeck , Aksel Goehnermeier , Wolfgang Singer , Helmut Beierl , Heiko Feldmann , Hans-Juergen Mann , Jochen Hetzler
IPC分类号： G03B27/72 , G03B27/68 , G03B27/42 , G03B27/52 , G03B27/54 , G03B27/32
CPC分类号： G03F7/70308 , G03F7/70216 , G03F7/70566
摘要： The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.
摘要翻译：本发明涉及微光刻投影曝光装置和微光刻投影曝光装置，以及通过该方法制造的相关部件，方法和制品。微光刻投影曝光装置包括照明系统和投影物镜。照明系统可以照亮布置在投影物镜的物平面中的掩模。掩模可以具有待成像的结构。该方法可以包括用光照射照明系统的光瞳平面。该方法还可以包括在投影物镜的平面内修改通过该平面的光的相位，幅度和/或极化。可以以相互不同的方式对至少两个衍射级进行修改。与没有修改的方法相比，在结构成像中获得的掩模诱导的图像对比损失可以减少。

5. 发明申请

US20090073398A1 MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权
标题翻译：微波投影曝光装置
公开(公告)号：US20090073398A1
公开(公告)日：2009-03-19
申请号：US12210514
申请日：2008-09-15
申请人： Michael Totzeck , Aksel Goehnermeier , Wolfgang Singer , Helmut Beierl , Heiko Feldmann , Hans-Juergen Mann , Jochen Hetzler
发明人： Michael Totzeck , Aksel Goehnermeier , Wolfgang Singer , Helmut Beierl , Heiko Feldmann , Hans-Juergen Mann , Jochen Hetzler
IPC分类号： G03B27/52 , G03B27/72
CPC分类号： G03F7/70308 , G03F7/70216 , G03F7/70566
摘要： The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.
摘要翻译：本发明涉及微光刻投影曝光装置和微光刻投影曝光装置，以及通过该方法制造的相关部件，方法和制品。微光刻投影曝光装置包括照明系统和投影物镜。照明系统可以照亮布置在投影物镜的物平面中的掩模。掩模可以具有待成像的结构。该方法可以包括用光照射照明系统的光瞳平面。该方法还可以包括在投影物镜的平面中修改通过该平面的光的相位，幅度和/或极化。可以以相互不同的方式对至少两个衍射级进行修改。与没有修改的方法相比，在结构成像中获得的掩模诱导的图像对比损失可以减少。

6. 发明授权

US08982325B2 Microlithographic projection exposure apparatus 有权
标题翻译：微光刻投影曝光装置
公开(公告)号：US08982325B2
公开(公告)日：2015-03-17
申请号：US13333350
申请日：2011-12-21
申请人： Michael Totzeck , Aksel Goehnermeier , Wolfgang Singer , Helmut Beierl , Heiko Feldmann , Hans-Juergen Mann , Jochen Hetzler
发明人： Michael Totzeck , Aksel Goehnermeier , Wolfgang Singer , Helmut Beierl , Heiko Feldmann , Hans-Juergen Mann , Jochen Hetzler
IPC分类号： G03F7/20
CPC分类号： G03F7/70308 , G03F7/70216 , G03F7/70566
摘要： The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.
摘要翻译：本发明涉及微光刻投影曝光装置和微光刻投影曝光装置，以及通过该方法制造的相关部件，方法和制品。微光刻投影曝光装置包括照明系统和投影物镜。照明系统可以照亮布置在投影物镜的物平面中的掩模。掩模可以具有待成像的结构。该方法可以包括用光照射照明系统的光瞳平面。该方法还可以包括在投影物镜的平面内修改通过该平面的光的相位，幅度和/或极化。可以以相互不同的方式对至少两个衍射级进行修改。与没有修改的方法相比，在结构成像中获得的掩模诱导的图像对比损失可以减少。

7. 发明授权

US07965453B2 Projection objective and projection exposure apparatus including the same 有权
标题翻译：投影物镜与投影曝光装置相同
公开(公告)号：US07965453B2
公开(公告)日：2011-06-21
申请号：US12651829
申请日：2010-01-04
申请人： Wilhelm Ulrich , Aurelian Dodoc , Heiko Feldmann , Hans-Juergen Rostalski
发明人： Wilhelm Ulrich , Aurelian Dodoc , Heiko Feldmann , Hans-Juergen Rostalski
IPC分类号： G02B13/14 , G02B17/08
CPC分类号： G02B17/0812 , G02B13/143 , G03F7/70225
摘要： A reduction projection objective for projection lithography has a plurality of optical elements configured to image an effective object field arranged in an object surface of the projection objective into an effective image field arranged in an image surface of the projection objective at a reducing magnification ratio |β|
摘要翻译：用于投影光刻的缩小投影物镜具有多个光学元件，其被配置为将布置在投影物镜的物体表面中的有效物场成像为以缩小倍率|＆bgr布置在投影物镜的图像表面中的有效图像场 ; | <1。光学元件形成干燥物镜，其适用于具有折射率n'<1.01的气体介质的像差，填充投影物镜的出射表面和图像表面之间的有限厚度的图像空间。光学元件包括具有最大透镜直径Dmax的最大透镜，并且被配置为在具有最大图像场高度Y'的有效图像场中提供图像侧数值孔径NA <1。 COMP = Dmax /（Y'·（NA / n'）2）条件COMP <15.8成立。优选实施例具有相对较小的透镜总数，这允许以相对低的材料消耗制造尺寸相对较小的投影物镜，产生用于干式光刻的高性能，重量轻，紧凑的缩小投影物镜。

8. 发明授权

US07738188B2 Projection objective and projection exposure apparatus including the same 有权
标题翻译：投影物镜与投影曝光装置相同
公开(公告)号：US07738188B2
公开(公告)日：2010-06-15
申请号：US11727013
申请日：2007-03-23
申请人： Wilhelm Ulrich , Aurelian Dodoc , Heiko Feldmann , Hans-Juergen Rostalski
发明人： Wilhelm Ulrich , Aurelian Dodoc , Heiko Feldmann , Hans-Juergen Rostalski
IPC分类号： G02B13/14 , G02B17/08
CPC分类号： G02B17/0812 , G02B13/143 , G03F7/70225
摘要： A reduction projection objective for projection lithography has a plurality of optical elements configured to image an effective object field arranged in an object surface of the projection objective into an effective image field arranged in an image surface of the projection objective at a reducing magnification ratio |β|
摘要翻译：用于投影光刻的缩小投影物镜具有多个光学元件，其被配置为将布置在投影物镜的物体表面中的有效物场成像为以缩小倍率|＆bgr布置在投影物镜的图像表面中的有效图像场 ; | <1。光学元件形成干燥物镜，其适用于具有折射率n'<1.01的气体介质的像差，填充投影物镜的出射表面和图像表面之间的有限厚度的图像空间。光学元件包括具有最大透镜直径Dmax的最大透镜，并且被配置为在具有最大图像场高度Y'的有效图像场中提供图像侧数值孔径NA <1。 COMP = Dmax /（Y'·（NA / n'）2）条件COMP <15.8成立。

9. 发明授权

US07834981B2 Projection exposure apparatus, projection exposure method and projection objective 有权
标题翻译：投影曝光装置，投影曝光方法和投影物镜
公开(公告)号：US07834981B2
公开(公告)日：2010-11-16
申请号：US11747630
申请日：2007-05-11
申请人： Hans-Juergen Rostalski , Heiko Feldmann , Wilhelm Ulrich
发明人： Hans-Juergen Rostalski , Heiko Feldmann , Wilhelm Ulrich
IPC分类号： G03B27/54 , G03B27/42
CPC分类号： G03F7/70225 , G02B17/0892 , G03F7/70275
摘要： A projection exposure apparatus for the exposure of a radiation-sensitive substrate arranged in the region of an image surface of a projection objective with at least one image of a pattern of a mask that is arranged in the region of an object surface of the projection objective has a light source for emitting ultraviolet light from a wavelength band having a bandwidth Δλ>10 pm around a central operating wavelength λ>200 nm; an illumination system for receiving the light from the light source and for directing illumination radiation onto the pattern of the mask; and a projection objective for the imaging of the structure of the mask onto a light-sensitive substrate. The projection objective is a catadioptric projection objective having at least one concave mirror arranged in a region of a pupil surface of the projection objective, and a negative group having at least one negative lens arranged in direct proximity to the concave mirror in a region near the pupil surface, where a marginal ray height (MRH) of the imaging is greater than a chief ray height (CRH).
摘要翻译：一种投影曝光装置，用于曝光布置在投影物镜的图像表面的区域中的辐射敏感基板，其具有布置在投影物镜的物体表面的区域中的掩模图案的至少一个图像具有用于从围绕中心工作波长λ> 200nm的带宽＆Dgr;λ>10μm的波长带发射紫外光的光源; 照明系统，用于接收来自光源的光并将照射辐射引导到掩模的图案上; 以及用于将掩模的结构成像到感光基板上的投影物镜。投影物镜是一个反射折射投影物镜，它具有至少一个凹面镜，该凹面镜布置在投影物镜的光瞳表面的区域中，以及一个负极组，具有至少一个负透镜，瞳孔表面，其中成像的边缘射线高度（MRH）大于主射线高度（CRH）。

10. 发明授权

US08451458B2 Imaging microoptics for measuring the position of an aerial image 有权
标题翻译：用于测量空中图像位置的成像微光学
公开(公告)号：US08451458B2
公开(公告)日：2013-05-28
申请号：US13423760
申请日：2012-03-19
申请人： Hans-Juergen Rostalski , Heiko Feldmann
发明人： Hans-Juergen Rostalski , Heiko Feldmann
IPC分类号： G02B13/14
CPC分类号： G03F7/70666 , G02B13/143
摘要： An imaging microoptics, which is compact and robust, includes at least one aspherical member and has a folded beam path. The imaging microoptics provides a magnification |β′| of >800 by magnitude. Furthermore, a system for positioning a wafer with respect to a projection optics includes the imaging microoptics, an image sensor positionable in the image plane of the imaging microoptics, for measuring a position of an aerial image of the projection optics, and a wafer stage with an actuator and a controller for positioning the wafer in dependence of an output signal of the image sensor.
摘要翻译：紧凑且坚固的成像微光学件包括至少一个非球面构件并且具有折叠的光束路径。成像微光学提供了一个放大| beta | | > 800。此外，用于相对于投影光学元件定位晶片的系统包括成像微光学，可定位在成像微光学图像平面中的图像传感器，用于测量投影光学器件的空间图像的位置，以及具有致动器和用于根据图像传感器的输出信号定位晶片的控制器。

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