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    • 10. 发明申请
    • PHOTODIODE FOR MULTIPLE WAVELENGTH OPERATION
    • 多波长光圈操作
    • US20070072326A1
    • 2007-03-29
    • US11532762
    • 2006-09-18
    • Dong ZhengPhillip BenzelJoy JonesAlexander KalnitskyPerumal Ratman
    • Dong ZhengPhillip BenzelJoy JonesAlexander KalnitskyPerumal Ratman
    • H01L21/00H01L31/113H01L31/0203H01L31/062
    • H01L27/1462H01L27/1463H01L31/02165
    • A method of a fabricating a multiple wavelength adapted photodiode and resulting photodiode includes the steps of providing a substrate having a first semiconductor type surface region on at least a portion thereof, implanting and forming a second semiconductor type shallow surface layer into the surface region, and forming a multi-layer anti-reflective coating (ARC) on the shallow surface layer. The forming step includes depositing or forming a thin oxide layer on the shallow surface layer and depositing a second dielectric layer different from the thin oxide layer on the thin oxide layer. An etch stop is formed on the second dielectric, wherein the etch stop includes at least one layer resistant to oxide etch. At least one oxide including layer (e.g. ILD) is then deposited on the etch stop. The oxide including layer and etch stop are then removed to expose at least a portion of the ARC to the ambient.
    • 一种制造多波长适应光电二极管和所得光电二极管的方法包括以下步骤:在其至少一部分上提供具有第一半导体类型表面区域的衬底,将表面区域中的第二半导体型浅表面层注入并形成,以及 在浅表面层上形成多层抗反射涂层(ARC)。 形成步骤包括在浅表面层上沉积或形成薄氧化物层,并在薄氧化物层上沉积不同于薄氧化物层的第二电介质层。 蚀刻停止件形成在第二电介质上,其中蚀刻停止层包括至少一层抵抗氧化物蚀刻的层。 然后将至少一种包括层(例如ILD)的氧化物沉积在蚀刻停止件上。 然后去除包括氧化物层和蚀刻停止层,以将ARC的至少一部分暴露于环境中。