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1. 发明申请

US20120161276A1 SEMICONDUCTOR DEVICE COMPRISING AN ISOLATION TRENCH INCLUDING SEMICONDUCTOR ISLANDS 有权
标题翻译：包含半导体岛的隔离层的半导体器件
公开(公告)号：US20120161276A1
公开(公告)日：2012-06-28
申请号：US13321867
申请日：2009-05-22
申请人： Deb Kumar Pal , Alexander Hoelke , Pei Shan Chua , Gopalakrishnan Kulathu Sankar , Kia Yaw Kee , Yang Hao , Uta Kuniss
发明人： Deb Kumar Pal , Alexander Hoelke , Pei Shan Chua , Gopalakrishnan Kulathu Sankar , Kia Yaw Kee , Yang Hao , Uta Kuniss
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L29/868 , H01L29/405 , H01L29/407 , H01L29/8611
摘要： The present invention provides semiconductor devices and methods for fabricating the same, in which superior dielectric termination of drift regions is accomplished by a plurality of intersecting trenches with intermediate semiconductor islands. Thus, a deep trench arrangement can be achieved without being restricted by the overall width of the isolation structure.
摘要翻译：本发明提供了半导体器件及其制造方法，其中漂移区的优良电介质终端由具有中间半导体岛的多个相交沟槽完成。因此，可以实现深沟槽布置，而不受隔离结构的整体宽度的限制。

2. 发明授权

US08841186B2 Manufacturing of a semiconductor device and corresponding semiconductor device 有权
标题翻译：制造半导体器件和相应的半导体器件
公开(公告)号：US08841186B2
公开(公告)日：2014-09-23
申请号：US13582142
申请日：2010-03-04
申请人： Alexander Hoelke , Deb Kumar Pal , Kia Yaw Kee , Yang Hao
发明人： Alexander Hoelke , Deb Kumar Pal , Kia Yaw Kee , Yang Hao
IPC分类号： H01L21/336 , H01L29/78 , H01L29/06 , H01L29/10 , H01L21/265 , H01L29/66 , H01L29/423
CPC分类号： H01L21/26586 , H01L29/0634 , H01L29/0696 , H01L29/1033 , H01L29/4236 , H01L29/66659 , H01L29/7835 , H01L2924/0002 , H01L2924/00
摘要： The disclosed method of manufacturing (110, 120, 130, 140) a semiconductor device (12) has the steps (112, 114, 116) of: forming at least one wall (33) of a body (44) of the semiconductor device (12) by etching at least one trench (22) for a gate (42) of the semiconductor device (12) into the body (44); and performing a slanted implantation doping (126, 128) into the at least one wall (33) of the body (44), after the etching (112) of the at least one trench (22) and prior to coating the at least one trench (22) with an insulating layer (29). A semiconductor device (12) comprises at least one trench (22) for a gate (42) of the semiconductor device (12); and a body (44) having at least one wall (33) of the at least one trench (22), wherein a deviation (64) of a doping concentration (62) along a distance (66) in depth-direction (do) of the at least one trench (22) in a surface (33) of the at least one wall (33) is less than ten percent of a maximum value (68) of the doping concentration (62) along the distance (66).
摘要翻译：所公开的制造（110,120,130,140）半导体器件（12）的方法具有以下步骤：形成半导体器件的主体（44）的至少一个壁（33）（12）通过将用于半导体器件（12）的栅极（42）的至少一个沟槽（22）蚀刻到主体（44）中; 以及在所述至少一个沟槽（22）的所述蚀刻（112）之后并且在涂覆所述至少一个沟槽（22）之前，在所述主体（44）的所述至少一个壁（33）中执行倾斜注入掺杂（126,128）具有绝缘层（29）的沟槽（22）。半导体器件（12）包括用于半导体器件（12）的栅极（42）的至少一个沟槽（22）; 以及具有所述至少一个沟槽（22）的至少一个壁（33）的主体（44），其中沿着深度方向（do）的距离（66）的掺杂浓度（62）的偏差（64）在所述至少一个壁（33）的表面（33）中的所述至少一个沟槽（22）的距离小于所述距离（66）的所述掺杂浓度（62）的最大值（68）的百分之十。

3. 发明授权

US08759942B2 Semiconductor device comprising an isolation trench including semiconductor islands 有权
标题翻译：半导体器件包括包括半导体岛的隔离沟槽
公开(公告)号：US08759942B2
公开(公告)日：2014-06-24
申请号：US13321867
申请日：2009-05-22
申请人： Alexander Hoelke , Deb Kumar Pal , Pei Shan Chua , Gopalakrishnan Kulathu Sankar , Kia Yaw Kee , Yang Hao , Uta Kuniss
发明人： Alexander Hoelke , Deb Kumar Pal , Pei Shan Chua , Gopalakrishnan Kulathu Sankar , Kia Yaw Kee , Yang Hao , Uta Kuniss
IPC分类号： H01L21/70 , H01L21/76 , H01L29/40 , H01L29/861
CPC分类号： H01L29/868 , H01L29/405 , H01L29/407 , H01L29/8611
摘要： The present invention provides semiconductor devices and methods for fabricating the same, in which superior dielectric termination of drift regions is accomplished by a plurality of intersecting trenches with intermediate semiconductor islands. Thus, a deep trench arrangement can be achieved without being restricted by the overall width of the isolation structure.
摘要翻译：本发明提供了半导体器件及其制造方法，其中漂移区的优良电介质终端由具有中间半导体岛的多个相交沟槽完成。因此，可以实现深沟槽布置，而不受隔离结构的整体宽度的限制。

4. 发明申请

US20120319193A1 MANUFACTURING OF A SEMICONDUCTOR DEVICE AND CORRESPONDING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造和相应的半导体器件
公开(公告)号：US20120319193A1
公开(公告)日：2012-12-20
申请号：US13582142
申请日：2010-03-04
申请人： Alexander Hoelke , Deb Kumar Pal , Kia Yaw Kee , Yang Hao
发明人： Alexander Hoelke , Deb Kumar Pal , Kia Yaw Kee , Yang Hao
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L21/26586 , H01L29/0634 , H01L29/0696 , H01L29/1033 , H01L29/4236 , H01L29/66659 , H01L29/7835 , H01L2924/0002 , H01L2924/00
摘要： The disclosed method of manufacturing (110, 120, 130, 140) a semiconductor device (12) has the steps (112, 114, 116) of: forming at least one wall (33) of a body (44) of the semiconductor device (12) by etching at least one trench (22) for a gate (42) of the semiconductor device (12) into the body (44); and performing a slanted implantation doping (126, 128) into the at least one wall (33) of the body (44), after the etching (112) of the at least one trench (22) and prior to coating the at least one trench (22) with an insulating layer (29). A semiconductor device (12) comprises at least one trench (22) for a gate (42) of the semiconductor device (12); and a body (44) having at least one wall (33) of the at least one trench (22), wherein a deviation (64) of a doping concentration (62) along a distance (66) in depth-direction (do) of the at least one trench (22) in a surface (33) of the at least one wall (33) is less than ten percent of a maximum value (68) of the doping concentration (62) along the distance (66).
摘要翻译：所公开的制造（110,120,130,140）半导体器件（12）的方法具有以下步骤：形成半导体器件的主体（44）的至少一个壁（33）（12）通过将用于半导体器件（12）的栅极（42）的至少一个沟槽（22）蚀刻到主体（44）中; 以及在所述至少一个沟槽（22）的所述蚀刻（112）之后并且在涂覆所述至少一个沟槽（22）之前，在所述主体（44）的所述至少一个壁（33）中执行倾斜注入掺杂（126,128）具有绝缘层（29）的沟槽（22）。半导体器件（12）包括用于半导体器件（12）的栅极（42）的至少一个沟槽（22）; 以及具有所述至少一个沟槽（22）的至少一个壁（33）的主体（44），其中沿着深度方向（do）的距离（66）的掺杂浓度（62）的偏差（64）在所述至少一个壁（33）的表面（33）中的所述至少一个沟槽（22）的距离小于所述距离（66）的所述掺杂浓度（62）的最大值（68）的百分之十。

5. 发明授权

US09653620B2 Semiconductor device 有权
公开(公告)号：US09653620B2
公开(公告)日：2017-05-16
申请号：US14932538
申请日：2015-11-04
申请人： Alexander Dietrich Hölke , Deb Kumar Pal , Kia Yaw Kee , Yang Hao
发明人： Alexander Dietrich Hölke , Deb Kumar Pal , Kia Yaw Kee , Yang Hao
IPC分类号： H01L29/868 , H01L29/40 , H01L29/861
CPC分类号： H01L29/868 , H01L29/405 , H01L29/407 , H01L29/8611
摘要： A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes an insulating portion provided adjacent the drift portion and at least one of the doped portions in a region where the drift portion and the at least one doped portion meet. The device further includes at least one additional portion, wherein the at least one additional portion is located such that, when the doped portions and the at least one additional portion are biased, the electrical potential lines leave the semiconductor drift portion homogeneously.

6. 发明申请

US20160056305A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20160056305A1
公开(公告)日：2016-02-25
申请号：US14932538
申请日：2015-11-04
申请人： Alexander Dietrich Holke , Deb Kumar Pal , Kia Yaw Kee , Yang Hao
发明人： Alexander Dietrich Holke , Deb Kumar Pal , Kia Yaw Kee , Yang Hao
IPC分类号： H01L29/868 , H01L29/40
CPC分类号： H01L29/868 , H01L29/405 , H01L29/407 , H01L29/8611
摘要： A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes an insulating portion provided adjacent the drift portion and at least one of the doped portions in a region where the drift portion and the at least one doped portion meet. The device further includes at least one additional portion, wherein the at least one additional portion is located such that, when the doped portions and the at least one additional portion are biased, the electrical potential lines leave the semiconductor drift portion homogeneously.
摘要翻译：一种包括p或p +掺杂部分和通过半导体漂移部分从p或p +掺杂部分分离的n或n +掺杂部分的半导体器件。该装置还包括邻近漂移部分设置的绝缘部分和漂移部分和至少一个掺杂部分相交的区域中的至少一个掺杂部分。器件还包括至少一个附加部分，其中至少一个附加部分被定位成使得当掺杂部分和至少一个附加部分被偏置时，电势线均匀地离开半导体漂移部分。

7. 发明申请

US20120175484A1 DUAL-LAYER SUCTION CUP 失效
标题翻译：双层抽吸杯
公开(公告)号：US20120175484A1
公开(公告)日：2012-07-12
申请号：US12985662
申请日：2011-01-06
申请人： Yang Hao , Ming Da Huang
发明人： Yang Hao , Ming Da Huang
IPC分类号： F16B47/00
CPC分类号： F16B47/00
摘要： A dual-layer suction cup includes an outer body, an adhesive soft inner body and an elastic unit. The outer body is made of a hard material. The adhesive soft inner body can be attached to a smooth airtight surface and a rough airtight surface, providing an adhesion effect. The elastic unit will provide elasticity in an opposite direction after being pressed, such that the chamber in the suction cup is in a vacuum state to enhance the adhesion effect. The adhesive soft inner body and the elastic unit of the present invention greatly enhance the adhesion effect.
摘要翻译：双层吸盘包括外体，粘合剂软内体和弹性单元。外壳由硬质材料制成。粘合软内层可以粘贴在光滑的气密表面和粗糙的气密表面，提供粘附效果。弹性单元在被按压之后将沿相反方向提供弹性，使得吸盘中的腔室处于真空状态以增强粘附效果。本发明的粘合剂软内体和弹性单元大大提高了附着效果。

8. 发明申请

US20100027363A1 REFRESH CONTROLLER AND REFRESH CONTROLLING METHOD FOR EMBEDDED DRAM 失效
标题翻译：嵌入式DRAM的刷新控制器和刷新控制方法
公开(公告)号：US20100027363A1
公开(公告)日：2010-02-04
申请号：US12507224
申请日：2009-07-22
申请人： Yu Fei Li , Yong Lu , Yang Hao
发明人： Yu Fei Li , Yong Lu , Yang Hao
IPC分类号： G11C7/00 , G11C8/00
CPC分类号： G11C11/406 , G06F13/1636 , G11C11/40603 , G11C11/40611
摘要： The present invention provides a refresh controller for embedded DRAM, configured to receive an external access signal and generate refresh enabling signal REFN, refresh address signal CRA and confliction signal, said embedded DRAM comprising a plurality of memory groups, said controller comprising: a status controlling module that generates refresh enabling signal REFN and last refresh signal last_ccr according to the refresh interval and clock cycles; a refresh searching module that searches in said plurality of memory bank groups for at least one memory bank group that is to be refreshed in the refresh interval, and generates refresh address signal CRA according to the external access signal and the searched memory bank group; a scoreboard module that records the status of each of said plurality of memory bank groups according to said refresh address signal CRA and external access signal; and a confliction detecting module that generates confliction signal according to said external access signal, last refresh signal last_ccr and the status of each of said memory banks. A corresponding refresh controlling method is also provided in the present invention.
摘要翻译：本发明提供了一种用于嵌入式DRAM的刷新控制器，其被配置为接收外部访问信号并产生刷新使能信号REFN，刷新地址信号CRA和冲突信号，所述嵌入式DRAM包括多个存储器组，所述控制器包括：状态控制模块根据刷新间隔和时钟周期产生刷新使能信号REFN和最后刷新信号last_ccr; 刷新搜索模块，用于在所述多个存储体组中搜索要在刷新间隔中刷新的至少一个存储体组，并根据外部存取信号和所搜索的存储体组产生刷新地址信号CRA; 记录板模块，其根据所述刷新地址信号CRA和外部访问信号记录所述多个存储体组中的每一个的状态; 以及冲突检测模块，其根据所述外部访问信号，最后刷新信号last_ccr和每个所述存储体的状态产生冲突信号。在本发明中也提供了相应的刷新控制方法。

9. 发明授权

US08376295B2 Dual-layer suction cup 失效
标题翻译：双层吸盘
公开(公告)号：US08376295B2
公开(公告)日：2013-02-19
申请号：US12985662
申请日：2011-01-06
申请人： Yang Hao , Ming Da Huang
发明人： Yang Hao , Ming Da Huang
IPC分类号： A45D42/14 , F16B47/00
CPC分类号： F16B47/00
摘要： A dual-layer suction cup includes an outer body, an adhesive soft inner body and an elastic unit. The outer body is made of a hard material. The adhesive soft inner body can be attached to a smooth airtight surface and a rough airtight surface, providing an adhesion effect. The elastic unit will provide elasticity in an opposite direction after being pressed, such that the chamber in the suction cup is in a vacuum state to enhance the adhesion effect. The adhesive soft inner body and the elastic unit of the present invention greatly enhance the adhesion effect.
摘要翻译：双层吸盘包括外体，粘合剂软内体和弹性单元。外壳由硬质材料制成。粘合软内层可以粘贴在光滑的气密表面和粗糙的气密表面，提供粘附效果。弹性单元在被按压之后将沿相反方向提供弹性，使得吸盘中的腔室处于真空状态以增强粘附效果。本发明的粘合剂软内体和弹性单元大大提高了附着效果。

10. 发明申请

US20120085879A1 DUAL-LAYER SUCKING DISC 审中-公开
标题翻译：双层吊架
公开(公告)号：US20120085879A1
公开(公告)日：2012-04-12
申请号：US12899601
申请日：2010-10-07
申请人： Yang Hao
发明人： Yang Hao
IPC分类号： F16B47/00
CPC分类号： F16B47/00
摘要： A dual-layer sucking disc includes a sucking body capable of adhering to a smooth surface. The sucking body has an annular closing surface which is a plane and disposed around the periphery of the sucking body. The sucking body has a concave bottom to form a sucking chamber. An inner soft layer is provided in the sucking chamber of the sucking body, which is capable of adhering to a rough surface. The inner soft layer is attached to the sucking chamber except the annular closing surface. The present invention can adhere to a smooth airtight surface with the annular closing surface or a rough airtight surface with the inner soft layer. The present invention is simply in configuration and can be manufactured with ease and used widely.
摘要翻译：双层吸盘包括能够粘附到光滑表面的吸入体。吸引体具有作为平面的环状的闭合面，并且设置在吸引体的周围。吸入体具有凹的底部以形成吸入室。在吸附体的吸入室中设置有内层软层，其能够粘附到粗糙表面。内部软层除了环形闭合表面附接到吸入室。本发明可以与环形封闭表面或具有内软层的粗糙气密表面粘附在光滑的气密表面上。本发明简单地构成，可以容易地制造并广泛使用。

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