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    • 8. 发明授权
    • Interconnect structure for an integrated circuit and corresponding fabrication method
    • 集成电路的互连结构和相应的制造方法
    • US06806121B2
    • 2004-10-19
    • US10285090
    • 2002-10-31
    • Alexander BenedixStefan DankowskiReinhard DuereggerWolfgang Ruf
    • Alexander BenedixStefan DankowskiReinhard DuereggerWolfgang Ruf
    • H01L2144
    • H01L21/76838H01L23/528H01L2924/0002H01L2924/00
    • The present invention relates to an interconnect structure for an integrated circuit (1) having a first interconnect (B1; B1′; B1″), which is composed of a plurality of interconnect sections (A11-A16; A11′-A16′; A11″-A14″) lying in a first and a second interconnect plane (M0, M1); and a second interconnect (B2; B2′; B2″), which runs adjacent to the first interconnect (B1; B1′; B1″) and which is composed of a plurality of interconnect sections (A21-A25; A21′-A25′; A21″-A23″) lying in the first and second interconnect planes (M0, M1); the first and second interconnects (B1; B1′; B1″; B2; B2′; B2″) being offset with respect to one another in the longitudinal direction in such a way that the interconnect sections (A12, A14, A16; A12′, A14′, A16′; A12″, A14″) of the first interconnect (B1; B1′; B1″) which lie in the first interconnect plane (M0) run at least in sections beside the interconnect sections (A22, A24; A22′; A24′; A21″, A23″) of the second interconnect (B2; B2′; B2″) which lie in the second interconnection plane (M1), and that the interconnect sections (A11, A13, A15; A11′, A13′, A15′; A11″, A13″) of the first interconnect (B1; B1′; B1″) which lie in the second interconnect plane (M1) run at least in sections beside the interconnect sections (A21, A23, A25; A21′, A23′, A25′; A22″) of the second interconnect (B2; B2′; B2″) which lie in the first interconnect plane (M0). The invention also provides a corresponding fabrication method.
    • 本发明涉及具有第一互连(B1; B1'; B1“)的集成电路(1)的互连结构,其由多个互连部分(A11-A16; A11'-A16')组成; A11“-A14”),位于第一和第二互连平面(M0,M1)中; 和与第一互连(B1; B1'; B1“)相邻的第二互连(B2; B2'; B2”),它们由多个互连部分(A21-A25; A21'- A25“; A21”-A23“),位于第一和第二互连平面(M0,M1)中; 第一和第二互连(B1; B1'; B1“; B2; B2'; B2”)在纵向方向上彼此偏移,使得互连部分(A12,A14,A16; 位于第一互连平面(M0)中的第一互连(B1; B1'; B1“)的A12',A14',A16'; A12”,A14“)至少在互连部分旁边 位于第二互连平面(M1)中的第二互连(B2; B2'; B2“)的位置(A22,A24; A22'; A24'; A21”,A23“), A11,A13,A
    • 9. 发明授权
    • Dynamic memory device and method for controlling such a device
    • 用于控制这种设备的动态存储器件和方法
    • US06738304B2
    • 2004-05-18
    • US10283992
    • 2002-10-30
    • Alexander BenedixStefan DankowskiReinhard DuereggerWolfgang Ruf
    • Alexander BenedixStefan DankowskiReinhard DuereggerWolfgang Ruf
    • G11C700
    • G11C11/406
    • According to one embodiment, a dynamic memory is provided. The dynamic memory can include a memory matrix having a plurality of memory cells arranged in rows and columns. The memory cells in a row can be connected by in each case one of a plurality of word lines. The memory cells in a column can be connected by in each case one of a plurality of bit lines. The dynamic memory can also include a sense amplifier for reading data from the memory cells via the plurality of bit lines. Further, the dynamic memory can include a row address decoder and a column address decoder for generating memory-internal address in a manner dependent on a memory-external address signal. The dynamic memory can also include a sequence control device for cyclically generating refresh addresses for carrying for carrying out a refresh operation of the memory cells.
    • 根据一个实施例,提供动态存储器。 动态存储器可以包括具有以行和列排列的多个存储器单元的存储器矩阵。 在每种情况下,可以连接多行字线中的一行中的存储单元。 列中的存储单元可以在每种情况下连接多个位线中的一个。 动态存储器还可以包括用于经由多个位线从存储器单元读取数据的读出放大器。 此外,动态存储器可以包括行地址解码器和用于以取决于存储器 - 外部地址信号的方式产生存储器内部地址的列地址解码器。 动态存储器还可以包括用于循环产生刷新地址以执行对存储器单元进行刷新操作的序列控制装置。
    • 10. 发明授权
    • Method for storing data in a memory device with the possibility of access to redundant memory cells
    • 将数据存储在具有访问冗余存储单元的可能性的存储器件中的方法
    • US06819606B2
    • 2004-11-16
    • US10339031
    • 2003-01-09
    • Alexander BenedixStefan DankowskiReinhard DuereggerWolfgang Ruf
    • Alexander BenedixStefan DankowskiReinhard DuereggerWolfgang Ruf
    • G11C700
    • G11C29/70
    • A method is provided for storing data in a memory device having memory cells arranged in memory cell rows and memory cell columns. The method can include a step for providing redundant memory cells in the memory device. The method can also include a step for localizing defective cells. Further, the method can include a step of accessing the redundant memory cells by means of a predeterminable access mode. The method can also include a step of bypassing defective memory cells of the memory device in a manner dependent on the predeterminable access mode during operation of the memory device for accessing redundant memory cells and for replacement by redundant memory cells. Further, the method can include a step for providing redundant memory cells for storing additional information describing a defect correction.
    • 提供了一种用于将数据存储在具有布置在存储单元行和存储单元列中的存储单元的存储器件中的方法。 该方法可以包括在存储器件中提供冗余存储器单元的步骤。 该方法还可以包括用于定位缺陷单元的步骤。 此外,该方法可以包括通过可预定访问模式访问冗余存储器单元的步骤。 该方法还可以包括在存储器设备的操作期间以取决于可预定访问模式的方式绕过存储器件的有缺陷的存储单元的步骤,用于访问冗余存储器单元并由冗余存储器单元替换。 此外,该方法可以包括用于提供用于存储描述缺陷校正的附加信息的冗余存储器单元的步骤。