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1. 发明申请

US20050250023A1 Apparatus used in reshaping a surface of a photoresist 有权
标题翻译：用于重塑光刻胶表面的装置
公开(公告)号：US20050250023A1
公开(公告)日：2005-11-10
申请号：US11183045
申请日：2005-07-15
申请人： Alex Buxbaum , Melvin Montgomery
发明人： Alex Buxbaum , Melvin Montgomery
IPC分类号： G03F7/00 , G03F7/09 , G03F7/40 , G03F9/00
CPC分类号： G03F7/40 , G03F7/091
摘要： The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is fabricated using the patterned photoresist. In addition, the method may be used to enable improved control over the dimensions of a semiconductor device fabricated using a patterned photoresist. In particular, a patterned photoresist is treated with an etchant plasma to reshape the surface of the patterned photoresist, where reshaping includes the removal of “t”-topping at the upper surface of the patterned resist, the removal of standing waves present on patterned surfaces, and the removal of feet which may be present at the base of the patterned photoresist, where the photoresist contacts an underlying layer such as an ARC layer. The method is particularly useful for chemically amplified DUV photoresists, where the presence of “t”-topping, standing waves and foot formation is accentuated in the patterned photoresist as developed.
摘要翻译：本发明涉及一种改进对图案化光致抗蚀剂的尺寸的控制的方法，其使得能够更好地控制使用图案化光致抗蚀剂制造的光掩模或掩模版的临界尺寸。此外，该方法可以用于使得能够改进对使用图案化光致抗蚀剂制造的半导体器件的尺寸的控制。特别地，用蚀刻剂等离子体处理图案化的光致抗蚀剂以重塑形成图案的光致抗蚀剂的表面，其中整形包括去除图案化抗蚀剂的上表面处的“t” - 顶部，去除存在于图案化表面上的驻波以及可能存在于图案化光致抗蚀剂的基底处的脚的移除，其中光致抗蚀剂接触诸如ARC层的下层。该方法对于化学放大的DUV光致抗蚀剂特别有用，其中在显影的图案化光致抗蚀剂中存在“t”顶，驻波和脚形成。

2. 发明授权

US06931619B2 Apparatus for reshaping a patterned organic photoresist surface 失效
标题翻译：用于重塑图案化有机光致抗蚀剂表面的装置
公开(公告)号：US06931619B2
公开(公告)日：2005-08-16
申请号：US10395773
申请日：2003-03-24
申请人： Alex Buxbaum , Melvin W. Montgomery
发明人： Alex Buxbaum , Melvin W. Montgomery
IPC分类号： G03F7/00 , G03F7/09 , G03F7/40 , G03F9/00 , G06F17/50 , B44C1/22 , G21K5/00 , H01L21/3065
CPC分类号： G03F7/40 , G03F7/091
摘要： The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is fabricated using the patterned photoresist. In addition, the method may be used to enable improved control over the dimensions of a semiconductor device fabricated using a patterned photoresist. In particular, a patterned photoresist is treated with an etchant plasma to reshape the surface of the patterned photoresist, where reshaping includes the removal of “t”-topping at the upper surface of the patterned resist, the removal of standing waves present on patterned surfaces, and the removal of feet which may be present at the base of the patterned photoresist, where the photoresist contacts an underlying layer such as an ARC layer. The method is particularly useful for chemically amplified DUV photoresists, where the presence of “t”-topping, standing waves and foot formation is accentuated in the patterned photoresist as developed.
摘要翻译：本发明涉及一种改进对图案化光致抗蚀剂的尺寸的控制的方法，其使得能够更好地控制使用图案化光致抗蚀剂制造的光掩模或掩模版的临界尺寸。此外，该方法可以用于使得能够改进对使用图案化光致抗蚀剂制造的半导体器件的尺寸的控制。特别地，用蚀刻剂等离子体处理图案化的光致抗蚀剂以重塑形成图案的光致抗蚀剂的表面，其中整形包括去除图案化抗蚀剂的上表面处的“t” - 顶部，去除存在于图案化表面上的驻波以及可能存在于图案化光致抗蚀剂的基底处的脚的移除，其中光致抗蚀剂接触诸如ARC层的下层。该方法对于化学放大的DUV光致抗蚀剂特别有用，其中在显影的图案化光致抗蚀剂中存在“t”顶，驻波和脚形成。

3. 发明授权

US07077973B2 Methods for substrate orientation 失效
标题翻译：基板取向方法
公开(公告)号：US07077973B2
公开(公告)日：2006-07-18
申请号：US10418673
申请日：2003-04-18
申请人： Alex Buxbaum , Bjorn Skyberg
发明人： Alex Buxbaum , Bjorn Skyberg
IPC分类号： C23F1/00
CPC分类号： G03F1/80 , C23F4/00 , H01J37/321
摘要： Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a photolithographic reticle including positioning the reticle in a first orientation on a reticle support in a processing chamber, wherein the reticle comprises a metal photomask layer formed on an optically transparent substrate, and a patterned resist material deposited on the metal photomask layer, etching the metal photomask layer in the first orientation, positioning the reticle in at least a second orientation, and etching the metal photomask layer in the at least second orientation.
摘要翻译：提供了用于蚀刻设置在诸如光刻掩模之类的基底上的金属层的方法和设备。在一个方面，提供了一种用于处理光刻掩模版的方法，包括将掩模版定位在处理室中的掩模版支架上的第一取向上，其中所述掩模版包括形成在光学透明基板上的金属光掩模层，以及图案化抗蚀剂材料沉积在金属光掩模层上，以第一取向蚀刻金属光掩模层，将掩模版定位成至少第二取向，并以至少第二取向蚀刻金属光掩模层。

4. 发明授权

US06998206B2 Method of increasing the shelf life of a blank photomask substrate 失效
标题翻译：提高空白光掩模基板的保质期的方法
公开(公告)号：US06998206B2
公开(公告)日：2006-02-14
申请号：US10758827
申请日：2004-01-15
申请人： Scott Fuller , Melvin W. Montgomery , Jeffrey A. Albelo , Alex Buxbaum
发明人： Scott Fuller , Melvin W. Montgomery , Jeffrey A. Albelo , Alex Buxbaum
IPC分类号： G03F9/00 , G03F7/00
CPC分类号： G03F7/168 , G03F1/46 , G03F1/50 , G03F1/76 , G03F7/091 , Y10S430/146 , Y10S430/151
摘要： One principal embodiment of the disclosure pertains to a method of optically fabricating a photomask using a direct write continuous wave laser, comprising a series of steps including: applying an organic antireflection coating over a surface of a photomask which includes a chrome-containing layer; applying a chemically-amplified DUV photoresist over the organic antireflection coating; post apply baking the DUV photoresist over a specific temperature range; exposing a surface of the DUV photoresist to the direct write continuous wave laser; and, post exposure baking the imaged DUV photoresist over a specific temperature range. The direct write continuous wave laser preferably operates at a wavelength of 244 nm or 257 nm. In an alternative embodiment, the organic antireflection coating may be applied over an inorganic antireflection coating which overlies the chrome containing layer.
摘要翻译：本公开的一个主要实施例涉及一种使用直写式连续波激光器光学制造光掩模的方法，包括一系列步骤，包括：在包含含铬层的光掩模的表面上施加有机抗反射涂层; 在有机抗反射涂层上施加化学放大的DUV光致抗蚀剂; 在特定温度范围内涂抹DUV光刻胶; 将DUV光致抗蚀剂的表面暴露于直写式连续波激光器; 并且在特定温度范围内曝光烘烤成像的DUV光致抗蚀剂。直写式连续波激光器优选在244nm或257nm的波长下工作。在替代实施例中，有机抗反射涂层可以涂覆在覆盖含铬层的无机抗反射涂层上。

5. 发明授权

US06703169B2 Method of preparing optically imaged high performance photomasks 有权
标题翻译：制备光学成像的高性能光掩模的方法
公开(公告)号：US06703169B2
公开(公告)日：2004-03-09
申请号：US09912116
申请日：2001-07-23
申请人： Scott Fuller , Melvin W. Montgomery , Jeffrey A. Albelo , Alex Buxbaum
发明人： Scott Fuller , Melvin W. Montgomery , Jeffrey A. Albelo , Alex Buxbaum
IPC分类号： G03F900
CPC分类号： G03F7/168 , G03F1/46 , G03F1/50 , G03F1/76 , G03F7/091 , Y10S430/146 , Y10S430/151
摘要： One principal embodiment of the disclosure pertains to a method of optically fabricating a photomask using a direct write continuous wave laser, comprising a series of steps including: applying an organic antireflection coating over a surface of a photomask which includes a chrome-containing layer; applying a chemically-amplified DUV photoresist over the organic antireflection coating; post apply baking the DUV photoresist over a specific temperature range; exposing a surface of the DUV photoresist to the direct write continuous wave laser; and, post exposure baking the imaged DUV photoresist over a specific temperature range. The direct write continuous wave laser preferably operates at a wavelength of 244 nm or 257 nm. In an alternative embodiment, the organic antireflection coating may be applied over an inorganic antireflection coating which overlies the chrome containing layer.
摘要翻译：本公开的一个主要实施例涉及一种使用直写式连续波激光器光学制造光掩模的方法，包括一系列步骤，包括：在包含含铬层的光掩模的表面上施加有机抗反射涂层; 在有机抗反射涂层上施加化学放大的DUV光致抗蚀剂; 在特定温度范围内涂抹DUV光刻胶; 将DUV光致抗蚀剂的表面暴露于直写式连续波激光器; 并且在特定温度范围内曝光烘烤成像的DUV光致抗蚀剂。直写式连续波激光器优选在244nm或257nm的波长下工作。在替代实施例中，有机抗反射涂层可以涂覆在覆盖含铬层的无机抗反射涂层上。

6. 发明授权

US07244334B2 Apparatus used in reshaping a surface of a photoresist 有权
标题翻译：用于重塑光刻胶表面的装置
公开(公告)号：US07244334B2
公开(公告)日：2007-07-17
申请号：US11183045
申请日：2005-07-15
申请人： Alex Buxbaum , Melvin W. Montgomery
发明人： Alex Buxbaum , Melvin W. Montgomery
IPC分类号： H05H1/00 , G03F1/00
CPC分类号： G03F7/40 , G03F7/091
摘要： The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is fabricated using the patterned photoresist. In addition, the method may be used to enable improved control over the dimensions of a semiconductor device fabricated using a patterned photoresist. In particular, a patterned photoresist is treated with an etchant plasma to reshape the surface of the patterned photoresist, where reshaping includes the removal of “t”-topping at the upper surface of the patterned resist, the removal of standing waves present on patterned surfaces, and the removal of feet which may be present at the base of the patterned photoresist, where the photoresist contacts an underlying layer such as an ARC layer. The method is particularly useful for chemically amplified DUV photoresists, where the presence of “t”-topping, standing waves and foot formation is accentuated in the patterned photoresist as developed.
摘要翻译：本发明涉及一种改进对图案化光致抗蚀剂的尺寸的控制的方法，其使得能够更好地控制使用图案化光致抗蚀剂制造的光掩模或掩模版的临界尺寸。此外，该方法可以用于使得能够改进对使用图案化光致抗蚀剂制造的半导体器件的尺寸的控制。特别地，用蚀刻剂等离子体处理图案化的光致抗蚀剂以重塑形成图案的光致抗蚀剂的表面，其中整形包括去除图案化抗蚀剂的上表面处的“t” - 顶部，去除存在于图案化表面上的驻波以及可能存在于图案化光致抗蚀剂的基底处的脚的移除，其中光致抗蚀剂接触诸如ARC层的下层。该方法对于化学放大的DUV光致抗蚀剂特别有用，其中在显影的图案化光致抗蚀剂中存在“t”顶，驻波和脚形成。

7. 发明授权

US07208249B2 Method of producing a patterned photoresist used to prepare high performance photomasks 有权
标题翻译：制备用于制备高性能光掩模的图案化光致抗蚀剂的方法
公开(公告)号：US07208249B2
公开(公告)日：2007-04-24
申请号：US10261972
申请日：2002-09-30
申请人： Melvin Warren Montgomery , Alex Buxbaum , Scott Edward Fuller , Cecilia Annette Montgomery
发明人： Melvin Warren Montgomery , Alex Buxbaum , Scott Edward Fuller , Cecilia Annette Montgomery
IPC分类号： G03F9/00 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0392 , G03F7/0395 , G03F7/3021 , G03F7/322
摘要： We are able to significantly reduce variations in critical dimension from target for features in a patterned photoresist, where the patterned photoresist is generated during the fabrication of a reticle (photomask) to be used in semiconductor processing. The ability to maintain the targeted critical dimension of patterned photoresist features which were imaged using a direct write process depends upon the use of a photoresist binder resin system which provides a sufficiently dense structure to sterically hinder the movement of photoacid-labile groups after irradiation of such groups (writing of the pattern). As importantly, the photoacid groups which are used to generate the pattern need to be such that they are activated only at temperatures above about 70° C., and preferably at temperatures in the range of 110° C. to 150° C. Further improvement in uniformity of developed photoresist feature size across the reticle surface is achieved by controlling a combination of variables during development.
摘要翻译：我们能够显着降低关键尺寸与图案化光刻胶中特征的关键尺寸的变化，其中图案化的光致抗蚀剂在制造用于半导体处理的掩模版（光掩模）期间产生。维持使用直接写入过程成像的图案化光刻胶特征的目标临界尺寸的能力取决于使用光致抗蚀剂粘合剂树脂体系，其提供足够致密的结构以空间阻碍光致酸不稳定基团在照射之后的运动组（图案的写作）。重要的是，用于产生图案的光酸基团需要使其仅在高于约70℃，优选在110℃至150℃范围内的温度下活化。进一步改进通过在开发期间控制变量的组合来实现通过掩模版表面的显影光致抗蚀剂特征尺寸的均匀性。

8. 发明授权

US06582861B2 Method of reshaping a patterned organic photoresist surface 失效
公开(公告)号：US06582861B2
公开(公告)日：2003-06-24
申请号：US09811186
申请日：2001-03-16
申请人： Alex Buxbaum , Melvin W. Montgomery
发明人： Alex Buxbaum , Melvin W. Montgomery
IPC分类号： G03F900
CPC分类号： G03F7/40 , G03F7/091
摘要： The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is fabricated using the patterned photoresist. In addition, the method may be used to enable improved control over the dimensions of a semiconductor device fabricated using a patterned photoresist. In particular, a patterned photoresist is treated with an etchant plasma to reshape the surface of the patterned photoresist, where reshaping includes the removal of “t”-topping at the upper surface of the patterned resist, the removal of standing waves present on patterned surfaces, and the removal of feet which may be present at the base of the patterned photoresist, where the photoresist contacts an underlying layer such as an ARC layer. The method is particularly useful for chemically amplified DUV photoresists, where the presence of “t”-topping, standing waves and foot formation is accentuated in the patterned photoresist as developed.

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