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1. 发明申请

US20070022952A1 UNIQUE PASSIVATION TECHNIQUE FOR A CVD BLOCKER PLATE TO PREVENT PARTICLE FORMATION 失效
标题翻译：用于防止颗粒形成的CVD阻挡板的特殊钝化技术
公开(公告)号：US20070022952A1
公开(公告)日：2007-02-01
申请号：US11459531
申请日：2006-07-24
申请人： Alan Ritchie , Wei Lee , Ted Guo
发明人： Alan Ritchie , Wei Lee , Ted Guo
IPC分类号： C23C14/32 , C23F1/00 , C23C16/00
CPC分类号： C23C16/45561 , C23C14/165 , C23C16/4402 , C23C16/4404 , C23C16/45565 , C23C16/45591 , Y10T29/497 , Y10T29/49826 , Y10T137/0491 , Y10T137/9029
摘要： Blocker plates for chemical vapor deposition chambers and methods of treating blocker plates are provided. The blocker plates define a plurality of holes therethrough and have an upper surface and a lower surface that are at least about 99.5% pure, which minimizes the nucleation of contaminating particles on the blocker plates. A physically vapor deposited coating, such as an aluminum physically vapor deposited coating, may be formed on the upper and lower surfaces of the blocker plates. Chemical vapor deposition chambers including blocker plates having a physically vapor deposited coating thereon are also provided.
摘要翻译：提供化学气相沉积室的阻挡板和处理阻挡板的方法。阻挡板限定穿过其中的多个孔，并且具有至少约99.5％纯度的上表面和下表面，其最大限度地减小阻挡板上的污染颗粒的成核。可以在阻挡板的上表面和下表面上形成物理气相沉积涂层，例如铝物理气相沉积涂层。还提供了包括其上具有物理气相沉积涂层的阻挡板的化学气相沉积室。

2. 发明申请

US20070023144A1 GAS LINE WELDMENT DESIGN AND PROCESS FOR CVD ALUMINUM 失效
标题翻译：气体线路淬火设计和CVD铝工艺
公开(公告)号：US20070023144A1
公开(公告)日：2007-02-01
申请号：US11459575
申请日：2006-07-24
申请人： Wei Lee , Ted Guo , Steve Chiao , Alan Ritchie
发明人： Wei Lee , Ted Guo , Steve Chiao , Alan Ritchie
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： C23C16/45561 , C23C14/165 , C23C16/4402 , C23C16/4404 , C23C16/45565 , C23C16/45591 , Y10T29/497 , Y10T29/49826 , Y10T137/0491 , Y10T137/9029
摘要： A system of gas lines for a processing chamber and a method of forming a gas line system for a processing chamber are provided. The system of gas lines includes electropolished multi-way valves that connect electropolished linear gas lines. By using multi-way valves rather than tee-fittings and electropolishing the linear gas lines, the nucleation of contaminating particles in the system of gas lines may be reduced.
摘要翻译：提供了一种用于处理室的气体管线系统和形成用于处理室的气体管线系统的方法。气体管线系统包括连接电抛光线性气体管线的电抛光多通阀。通过使用多通阀而不是三通阀，并对线性气体管线进行电解抛光，可以减少气体管线系统中污染颗粒的成核。

3. 发明授权

US08702918B2 Apparatus for enabling concentricity of plasma dark space 有权
标题翻译：用于实现等离子体暗室的同心度的装置
公开(公告)号：US08702918B2
公开(公告)日：2014-04-22
申请号：US13327689
申请日：2011-12-15
申请人： Alan Ritchie , Donny Young , Keith A. Miller , Muhammad Rasheed , Steve Sansoni , Uday Pai
发明人： Alan Ritchie , Donny Young , Keith A. Miller , Muhammad Rasheed , Steve Sansoni , Uday Pai
IPC分类号： C23C14/56
CPC分类号： C23C14/34 , H01J37/3417 , H01J37/3423 , H01J37/3435 , H01J37/3441
摘要： In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.
摘要翻译：在一些实施例中，衬底处理装置可以包括腔体; 设置在所述室主体顶部的盖子; 耦合到所述盖的目标组件，所述目标组件包括待沉积在衬底上的材料的靶; 环形暗空间屏蔽，其具有围绕靶的外边缘设置的内壁; 邻近所述暗室屏蔽的外边缘设置的密封环; 以及支撑构件，其紧邻所述支撑构件的外端并且径向向内延伸，使得所述支撑构件支撑所述密封环和所述环形暗空间屏蔽，其中所述支撑构件在联接到所述盖时提供足够的压缩，使得在支撑构件和密封环以及密封环和目标组件之间形成密封件。

4. 发明申请

US20120028461A1 METHODS FOR DEPOSITING METAL IN HIGH ASPECT RATIO FEATURES 有权
标题翻译：用于在高比例特征中沉积金属的方法
公开(公告)号：US20120028461A1
公开(公告)日：2012-02-02
申请号：US13178870
申请日：2011-07-08
申请人： Alan Ritchie , Karl Brown , John Pipitone
发明人： Alan Ritchie , Karl Brown , John Pipitone
IPC分类号： H01L21/768
CPC分类号： H01L21/76898 , C23C14/046 , C23C14/34 , C23C14/345 , C23C14/3492 , C23C14/354 , C23C16/503 , C23C16/52 , C23C16/56 , H01J37/3408 , H01J2237/3327 , H01L21/2855 , H01L21/76865 , H01L21/76873
摘要： Methods for depositing metal in high aspect ratio features formed on a substrate are provided herein. In some embodiments, a method includes applying first RF power at VHF frequency to target comprising metal disposed above substrate to form plasma, applying DC power to target to direct plasma towards target, sputtering metal atoms from target using plasma while maintaining pressure in PVD chamber sufficient to ionize predominant portion of metal atoms, depositing first plurality of metal atoms on bottom surface of opening and on first surface of substrate, applying second RF power to redistribute at least some of first plurality from bottom surface to lower portion of sidewalls of the opening, and depositing second plurality of metal atoms on upper portion of sidewalls by reducing amount of ionized metal atoms in PVD chamber, wherein first and second pluralities form a first layer deposited on substantially all surfaces of opening.
摘要翻译：本文提供了在基板上形成的高纵横比特征中沉积金属的方法。在一些实施例中，一种方法包括将VHF频率的第一RF功率应用于设置在衬底上方的金属以形成等离子体，施加直流电力以将等离子体引向目标，使用等离子体从靶中溅射金属原子，同时保持PVD室中的压力足够以电离金属原子的主要部分，在开口的底表面和衬底的第一表面上沉积第一多个金属原子，施加第二RF功率以重新分配从开口的侧壁的底表面到下部的至少一些，以及通过减少PVD室中的电离金属原子的量将第二多个金属原子沉积在侧壁的上部，其中第一和第二多个形成沉积在开口的基本上所有表面上的第一层。

5. 发明授权

US09695502B2 Process kit with plasma-limiting gap 有权
公开(公告)号：US09695502B2
公开(公告)日：2017-07-04
申请号：US13435956
申请日：2012-03-30
申请人： Alan Ritchie , Donny Young
发明人： Alan Ritchie , Donny Young
IPC分类号： C23C14/34 , H01J37/32 , H01J37/34
CPC分类号： C23C14/34 , H01J37/32495 , H01J37/32642 , H01J37/32651 , H01J37/3405
摘要： Apparatus for processing substrates are provided herein. In some embodiments, an apparatus includes a process kit comprising a shield having one or more sidewalls configured to surround a first volume, the first volume disposed within an inner volume of a process chamber; and a first ring moveable between a first position, wherein the first ring rests on the shield, and a second position, wherein a gap is formed between an outer surface of the first ring and an inner surface of the one or more sidewalls, wherein a width of the gap is less than about two plasma sheath widths for a plasma formed at a frequency of about 40 MHz or higher and at a pressure of about 140 mTorr or lower.

6. 发明授权

US09255322B2 Substrate processing system having symmetric RF distribution and return paths 有权
标题翻译：基板处理系统具有对称的RF分布和返回路径
公开(公告)号：US09255322B2
公开(公告)日：2016-02-09
申请号：US13436776
申请日：2012-03-30
申请人： Donny Young , Alan Ritchie , Muhammad Rasheed , Keith A. Miller
发明人： Donny Young , Alan Ritchie , Muhammad Rasheed , Keith A. Miller
IPC分类号： C23C14/34 , H01J37/32 , C23C14/35 , H01J37/34
CPC分类号： C23C14/3407 , C23C14/35 , H01J37/32577 , H01J37/3405 , H01J37/3411 , H01J37/3414
摘要： A processing system may include a target having a central axis normal thereto; a source distribution plate having a target facing side opposing a backside of the target, wherein the source distribution plate includes a plurality of first features such that a first distance of a first radial RF distribution path along a given first diameter is about equal to a second distance of an opposing second radial RF distribution path along the given first diameter; and a ground plate opposing a target opposing side of the source distribution plate and having a plurality of second features disposed about the central axis and corresponding to the plurality of first features, wherein a third distance of a first radial RF return path along a given second diameter is about equal to a fourth distance of an opposing second radial RF return path along the given second diameter.
摘要翻译：处理系统可以包括具有与其正交的中心轴的目标; 源分布板，其具有与所述靶的背面相对的目标面对侧，其中所述源分配板包括多个第一特征，使得沿着给定第一直径的第一径向RF分配路径的第一距离大约等于第二特征沿着给定的第一直径的相对的第二径向RF分配路径的距离; 以及与所述源分配板的目标相对侧相对的并且具有围绕所述中心轴线设置并对应于所述多个第一特征的多个第二特征的接地板，其中沿着给定的第二部分的第一径向RF返回路径的第三距离直径约等于沿着给定的第二直径的相对的第二径向RF返回路径的第四距离。

7. 发明授权

US09218961B2 Methods of forming a metal containing layer on a substrate with high uniformity and good profile control 有权
标题翻译：在基材上形成含金属层的方法，其具有高均匀性和良好的轮廓控制
公开(公告)号：US09218961B2
公开(公告)日：2015-12-22
申请号：US13622769
申请日：2012-09-19
申请人： Zhenbin Ge , Alan Ritchie , Adolph Miller Allen
发明人： Zhenbin Ge , Alan Ritchie , Adolph Miller Allen
IPC分类号： C23C14/24 , H01L21/02 , C23C14/58 , C23C14/54 , H01L21/285 , H01L21/768 , C23C14/14 , C23C14/34
CPC分类号： H01L21/02521 , C23C14/14 , C23C14/34 , C23C14/3492 , C23C14/54 , C23C14/5826 , C23C14/5833 , C23C14/584 , C23C14/5873 , H01L21/2855 , H01L21/76838
摘要： Methods for forming a metal containing layer onto a substrate with good deposition profile control and film uniformity across the substrate are provided. In one embodiment, a method of sputter depositing a metal containing layer on the substrate includes transferring a substrate in a processing chamber, supplying a gas mixture including at least Ne gas into the processing chamber, applying a RF power to form a plasma from the gas mixture, and depositing a metal containing layer onto the substrate in the presence of the plasma.
摘要翻译：提供了在衬底上形成含金属层的方法，其具有良好的沉积轮廓控制和跨衬底的膜均匀性。在一个实施例中，在衬底上溅射沉积含金属层的方法包括在处理室中转移衬底，将至少包含Ne气体的气体混合物供应到处理室中，施加RF功率以从气体形成等离子体混合物，并在存在等离子体的情况下将含金属的层沉积到衬底上。

8. 发明授权

US08795487B2 Physical vapor deposition chamber with rotating magnet assembly and centrally fed RF power 有权
标题翻译：具有旋转磁体组件的物理气相沉积室和集中供电的RF功率
公开(公告)号：US08795487B2
公开(公告)日：2014-08-05
申请号：US13075841
申请日：2011-03-30
申请人： Alan Ritchie , Keith Miller
发明人： Alan Ritchie , Keith Miller
IPC分类号： C23C14/35
CPC分类号： H01J37/3405 , H01J37/3455
摘要： Embodiments of the present invention provide improved methods and apparatus for physical vapor deposition (PVD) processing of substrates. In some embodiments, an apparatus for physical vapor deposition (PVD) may include a target assembly having a target comprising a source material to be deposited on a substrate, an opposing source distribution plate disposed opposite a backside of the target and electrically coupled to the target along a peripheral edge of the target, and a cavity disposed between the backside of the target and the source distribution plate; an electrode coupled to the source distribution plate at a point coincident with a central axis of the target; and a magnetron assembly comprising a rotatable magnet disposed within the cavity and having an axis of rotation that is aligned with a central axis of the target assembly, wherein the magnetron assembly is not driven through the electrode.
摘要翻译：本发明的实施例提供了用于衬底的物理气相沉积（PVD）处理的改进的方法和装置。在一些实施例中，用于物理气相沉积（PVD）的设备可以包括目标组件，其具有靶，其包括待沉积在衬底上的源材料，相对的源极分布板，与靶的背面相对并且电耦合到靶沿着靶的外围边缘，以及设置在靶的背面和源分布板之间的空腔; 在与所述目标的中心轴重合的点处耦合到所述源分配板的电极; 以及磁控管组件，其包括设置在所述空腔内并具有与所述目标组件的中心轴线对准的旋转轴线的可旋转磁体，其中所述磁控管组件不被驱动通过所述电极。

9. 发明申请

US20070170052A1 TARGET FOR SPUTTERING CHAMBER 有权
标题翻译：喷射室目标
公开(公告)号：US20070170052A1
公开(公告)日：2007-07-26
申请号：US11558929
申请日：2006-11-12
申请人： Alan Ritchie , Donny Young , Ilyoung (Richard) Hong , Kathleen Scheible , Umesh Kelkar
发明人： Alan Ritchie , Donny Young , Ilyoung (Richard) Hong , Kathleen Scheible , Umesh Kelkar
IPC分类号： C23C14/00
CPC分类号： C23C14/3407 , H01J37/32477 , H01J37/34 , H01J37/3408 , H01J37/3423 , H01J37/3426 , H01J37/3435 , H01J37/3497
摘要： A sputtering chamber has a sputtering target comprising a backing plate and a sputtering plate. The backing plate has a groove. The sputtering plate comprises a cylindrical mesa having a plane, and an annular inclined rim surrounding the cylindrical mesa. In one version, the backing plate comprises a material having a high thermal conductivity and a low electrical resistivity. In another version, the backing plate comprises a backside surface with a single groove or a plurality of grooves.
摘要翻译：溅射室具有包括背板和溅射板的溅射靶。背板具有凹槽。溅射板包括具有平面的圆柱形台面和围绕圆柱形台面的环形倾斜边缘。在一个版本中，背板包括具有高导热性和低电阻率的材料。在另一种形式中，背板包括具有单个凹槽或多个凹槽的背面。

10. 发明申请

US20100314244A1 Ionized Physical Vapor Deposition for Microstructure Controlled Thin Film Deposition 审中-公开
公开(公告)号：US20100314244A1
公开(公告)日：2010-12-16
申请号：US12560798
申请日：2009-09-16
申请人： Karl Brown , Alan Ritchie , John A. Pipitone , Daniel J. Hoffman , Ying Rui , Donald J.K. Olgado
发明人： Karl Brown , Alan Ritchie , John A. Pipitone , Daniel J. Hoffman , Ying Rui , Donald J.K. Olgado
IPC分类号： C23C14/46
CPC分类号： C23C14/354 , C23C14/3471 , H01J37/32091 , H01J37/32165 , H01J37/3244 , H01J37/32449
摘要： Methods of processing a substrate in a PVD chamber comprising a target, a substrate and a process gas at a pressure sufficient to cause ionization of a substantial portion of species sputtered from the target are described. A capacitively coupled high density plasma is maintained by applying very high frequency power to the target. Sputtered material is ionized in the plasma and accelerated toward the substrate by a high frequency bias power applied to the substrate. The microstructure of the resultant film is controlled by modifying one or more of the pressure and the high frequency bias power.

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