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1. 发明申请

US20070023144A1 GAS LINE WELDMENT DESIGN AND PROCESS FOR CVD ALUMINUM 失效
标题翻译：气体线路淬火设计和CVD铝工艺
公开(公告)号：US20070023144A1
公开(公告)日：2007-02-01
申请号：US11459575
申请日：2006-07-24
申请人： Wei Lee , Ted Guo , Steve Chiao , Alan Ritchie
发明人： Wei Lee , Ted Guo , Steve Chiao , Alan Ritchie
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： C23C16/45561 , C23C14/165 , C23C16/4402 , C23C16/4404 , C23C16/45565 , C23C16/45591 , Y10T29/497 , Y10T29/49826 , Y10T137/0491 , Y10T137/9029
摘要： A system of gas lines for a processing chamber and a method of forming a gas line system for a processing chamber are provided. The system of gas lines includes electropolished multi-way valves that connect electropolished linear gas lines. By using multi-way valves rather than tee-fittings and electropolishing the linear gas lines, the nucleation of contaminating particles in the system of gas lines may be reduced.
摘要翻译：提供了一种用于处理室的气体管线系统和形成用于处理室的气体管线系统的方法。气体管线系统包括连接电抛光线性气体管线的电抛光多通阀。通过使用多通阀而不是三通阀，并对线性气体管线进行电解抛光，可以减少气体管线系统中污染颗粒的成核。

2. 发明申请

US20070113783A1 Band shield for substrate processing chamber 审中-公开
标题翻译：基板处理室带屏蔽
公开(公告)号：US20070113783A1
公开(公告)日：2007-05-24
申请号：US11282179
申请日：2005-11-19
申请人： Wei Lee , Steve Chiao
发明人： Wei Lee , Steve Chiao
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： C23C16/4404 , C23C16/4412 , C23C16/4585 , H01J37/32477 , H01J37/32642
摘要： A band shield for a substrate processing chamber has a cylindrical wall with a slit therethrough. A flange extends radially outward from a bottom end of the cylindrical wall. A casing extends radially outwardly from a top end of the cylindrical wall and wraps around the slit to join to the flange. At least a portion of the surfaces of the cylindrical wall, flange, and casing have a surface roughness average of less than about 16 microinch, whereby less deposition occurs on these surfaces when they are exposed to the process environment in the substrate processing chamber. The vertical wall of the shield is absent any sills or other projections about the exhaust port to improve pumping conductance.
摘要翻译：用于衬底处理室的带屏蔽件具有穿过其中的狭缝的圆柱形壁。凸缘从圆柱形壁的底端径向向外延伸。壳体从圆柱形壁的顶端径向向外延伸并围绕狭缝包围以与凸缘接合。圆柱形壁，凸缘和套管的表面的至少一部分具有小于约16微英寸的表面粗糙度平均值，从而当这些表面暴露于衬底处理室中的工艺环境时，这些表面上的沉积更少。盾构件的垂直壁没有围绕排气口的任何栅栏或其他突出部分，以提高泵送电导率。

3. 发明申请

US20070079759A1 Ampoule splash guard apparatus 有权
标题翻译：安瓿防溅装置
公开(公告)号：US20070079759A1
公开(公告)日：2007-04-12
申请号：US11246890
申请日：2005-10-07
申请人： Wei Lee , Steve Chiao
发明人： Wei Lee , Steve Chiao
IPC分类号： C23C16/00
CPC分类号： C23C16/4482 , Y10S261/65
摘要： Embodiments of the invention provide an apparatus for generating a precursor gas used in a vapor deposition process system. The apparatus contains a canister or an ampoule for containing a chemical precursor and a splash guard contained within the ampoule. The splash guard is positioned to obstruct the chemical precursor in a liquid state from being bumped or splashed into a gas outlet during the introduction of a carrier gas into the ampoule. The carrier gas is usually directed into the ampoule through a gas inlet and combines with the vaporized chemical precursor to form a precursor gas. The splash guard is also positioned to permit the passage of the precursor gas from the gas outlet. In one example, the gas outlet contains a stem with a tapered tip and the splash guard is positioned at an angle parallel to the plane of the tapered tip.
摘要翻译：本发明的实施例提供一种用于产生在气相沉积工艺系统中使用的前体气体的装置。该装置包含用于容纳安瓿内的化学前体和防溅罩的罐或安瓿。飞溅防护罩的定位是在将载气引入安瓿中时，阻止液态的化学前体被撞击或溅入气体出口。载气通常通过气体入口引导到安瓿中，并与蒸发的化学前体结合以形成前体气体。防溅罩也被定位成允许来自气体出口的前体气体通过。在一个示例中，气体出口包含具有锥形尖端的杆，并且防溅罩以与锥形尖端的平面平行的角度定位。

4. 发明申请

US20060021703A1 Dual gas faceplate for a showerhead in a semiconductor wafer processing system 审中-公开
标题翻译：用于半导体晶片处理系统中喷头的双气面板
公开(公告)号：US20060021703A1
公开(公告)日：2006-02-02
申请号：US10901768
申请日：2004-07-29
申请人： Salvador Umotoy , Lawrence Chung-Lai Lei , Anh Nguyen , Steve Chiao , Hanh Nguyen
发明人： Salvador Umotoy , Lawrence Chung-Lai Lei , Anh Nguyen , Steve Chiao , Hanh Nguyen
IPC分类号： C23C16/00 , C23F1/00
CPC分类号： C23C16/45565 , H01J37/3244 , H01J37/32522
摘要： A faceplate for a showerhead of a semiconductor wafer processing system is provided. The faceplate has a plurality of gas passageways to provide a plurality of gases to the process region without commingling those gases before they reach the processing region within a reaction chamber. The showerhead includes a faceplate and a gas distribution manifold assembly. The faceplate defines a plurality of first gas holes that carry a first gas from the manifold assembly through the faceplate to the process region, and a plurality of channels that couple a plurality of second gas holes to a radial plenum that receives the second gas from the manifold assembly. The faceplate and the manifold assembly are each fabricated from a substantially solid nickel material.
摘要翻译：提供了一种用于半导体晶片处理系统的喷头的面板。面板具有多个气体通道，以在工艺区域内提供多个气体，而不会在这些气体到达反应室内的处理区域之前混合。喷头包括面板和气体分配歧管组件。面板限定了多个第一气体孔，其将来自歧管组件的第一气体通过面板传送到处理区域，以及将多个第二气体孔连接到径向增压室的多个通道，其将从第二气体接收第二气体歧管组件。面板和歧管组件各自由基本上固体的镍材料制成。

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