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1. 发明授权

US08796733B2 Low voltage tunnel field-effect transistor (TFET) and method of making same 有权
标题翻译：低电压隧道场效应晶体管（TFET）及其制造方法
公开(公告)号：US08796733B2
公开(公告)日：2014-08-05
申请号：US13206187
申请日：2011-08-09
申请人： Alan C. Seabaugh , Patrick Fay , Huili (Grace) Xing , Guangle Zhou , Yeqing Lu , Mark A. Wistey , Siyuranga Koswatta
发明人： Alan C. Seabaugh , Patrick Fay , Huili (Grace) Xing , Guangle Zhou , Yeqing Lu , Mark A. Wistey , Siyuranga Koswatta
IPC分类号： H01L29/66
CPC分类号： H01L29/7391
摘要： A low voltage tunnel field effect transistor includes a p-n tunnel junction, a gate-dielectric, a gate, a source-contact, and a drain-contact. The p-n tunnel junction includes a depletion region interfacing together a source-layer and a drain-layer. The depletion region includes a source-tunneling-region of the source-layer and a drain-tunneling-region of the drain-layer. When no external electric field is imposed, the depletion region of the p-n tunnel junction has an internal electric field that substantially points towards the source-tunneling-region and the drain-tunneling-region. The gate-dielectric is interfaced directly onto the drain-tunneling-region such that the drain-tunneling-region is between the source-tunneling-region and the gate-dielectric. The gate is interfaced onto the gate-dielectric such that the gate is configured to impose an external electric field which is oriented substantially in parallel to the internal electric field of the depletion region.
摘要翻译：低电压隧道场效应晶体管包括p-n隧道结，栅极 - 电介质，栅极，源极 - 接触和漏极 - 接触。 p-n隧道结包括将源极层和漏极层接合在一起的耗尽区域。耗尽区包括源极层的源极 - 沟道区域和漏极 - 层的漏极 - 隧穿区域。当不施加外部电场时，p-n隧道结的耗尽区具有基本上指向源极 - 隧穿区域和漏极 - 隧穿区域的内部电场。栅极电介质直接连接到漏极 - 隧穿区域上，使得漏极 - 隧穿区域在源极 - 隧穿区域和栅极 - 电介质之间。栅极连接到栅极 - 电介质上，使得栅极被配置为施加大致平行于耗尽区的内部电场定向的外部电场。

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