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1. 发明授权

US08796733B2 Low voltage tunnel field-effect transistor (TFET) and method of making same 有权
标题翻译：低电压隧道场效应晶体管（TFET）及其制造方法
公开(公告)号：US08796733B2
公开(公告)日：2014-08-05
申请号：US13206187
申请日：2011-08-09
申请人： Alan C. Seabaugh , Patrick Fay , Huili (Grace) Xing , Guangle Zhou , Yeqing Lu , Mark A. Wistey , Siyuranga Koswatta
发明人： Alan C. Seabaugh , Patrick Fay , Huili (Grace) Xing , Guangle Zhou , Yeqing Lu , Mark A. Wistey , Siyuranga Koswatta
IPC分类号： H01L29/66
CPC分类号： H01L29/7391
摘要： A low voltage tunnel field effect transistor includes a p-n tunnel junction, a gate-dielectric, a gate, a source-contact, and a drain-contact. The p-n tunnel junction includes a depletion region interfacing together a source-layer and a drain-layer. The depletion region includes a source-tunneling-region of the source-layer and a drain-tunneling-region of the drain-layer. When no external electric field is imposed, the depletion region of the p-n tunnel junction has an internal electric field that substantially points towards the source-tunneling-region and the drain-tunneling-region. The gate-dielectric is interfaced directly onto the drain-tunneling-region such that the drain-tunneling-region is between the source-tunneling-region and the gate-dielectric. The gate is interfaced onto the gate-dielectric such that the gate is configured to impose an external electric field which is oriented substantially in parallel to the internal electric field of the depletion region.
摘要翻译：低电压隧道场效应晶体管包括p-n隧道结，栅极 - 电介质，栅极，源极 - 接触和漏极 - 接触。 p-n隧道结包括将源极层和漏极层接合在一起的耗尽区域。耗尽区包括源极层的源极 - 沟道区域和漏极 - 层的漏极 - 隧穿区域。当不施加外部电场时，p-n隧道结的耗尽区具有基本上指向源极 - 隧穿区域和漏极 - 隧穿区域的内部电场。栅极电介质直接连接到漏极 - 隧穿区域上，使得漏极 - 隧穿区域在源极 - 隧穿区域和栅极 - 电介质之间。栅极连接到栅极 - 电介质上，使得栅极被配置为施加大致平行于耗尽区的内部电场定向的外部电场。

2. 发明申请

US20130342279A1 METHODS AND APPARATUS FOR TERAHERTZ WAVE AMPLITUDE MODULATION 有权
标题翻译： TERAHERTZ波幅调制方法与装置
公开(公告)号：US20130342279A1
公开(公告)日：2013-12-26
申请号：US13529934
申请日：2012-06-21
申请人： Berardi Sensale-Rodriguez , Rusen Yan , Huili (Grace) Xing , Michelle M. Kelly , Tian Fang , Debdeep Jena , Lei Liu
发明人： Berardi Sensale-Rodriguez , Rusen Yan , Huili (Grace) Xing , Michelle M. Kelly , Tian Fang , Debdeep Jena , Lei Liu
IPC分类号： H03C1/02
CPC分类号： H03C1/02 , H03C7/00
摘要： A wave amplitude modulator for modulating a transmitted electromagnetic wave includes one or multiple self-gated capacitively coupled pair(s) of electron layers such as semiconductor or semimetal layers. Two electrical contacts are placed to each layer of electrons of the self-gated pair(s), and a power source is electrically connected to them. The power source, by varying the voltage applied between layers of electrons, tunes the electron density thereof, thereby adjusting the optical conductivity thereof, and the change in the optical conductivity of the layers of electrons causes an amplitude modulation of the transmitted electromagnetic wave passing through the capacitively coupled layers of electrons.
摘要翻译：用于调制发射的电磁波的波幅调制器包括一个或多个自门电容耦合的电子层对，例如半导体层或半金属层。两个电触头被放置到自门控对的每个电子层，并且电源与它们电连接。电源通过改变施加在电子层之间的电压调谐其电子密度，从而调节其光导率，并且电子层的光导率的变化引起通过的透射电磁波的幅度调制电容耦合的电子层。

3. 发明申请

US20120032227A1 LOW VOLTAGE TUNNEL FIELD-EFFECT TRANSISTOR (TFET) AND METHOD OF MAKING SAME 有权
标题翻译：低电压隧道场效应晶体管（TFET）及其制造方法
公开(公告)号：US20120032227A1
公开(公告)日：2012-02-09
申请号：US13206187
申请日：2011-08-09
申请人： Alan C. SEABAUGH , Patrick FAY , Huili (Grace) XING , Guangle ZHOU , Yeqing LU , Mark A. WISTEY , Siyuranga KOSWATTA
发明人： Alan C. SEABAUGH , Patrick FAY , Huili (Grace) XING , Guangle ZHOU , Yeqing LU , Mark A. WISTEY , Siyuranga KOSWATTA
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7391
摘要： A low voltage tunnel field effect transistor includes a p-n tunnel junction, a gate-dielectric, a gate, a source-contact, and a drain-contact. The p-n tunnel junction includes a depletion region interfacing together a source-layer and a drain-layer. The depletion region includes a source-tunneling-region of the source-layer and a drain-tunneling-region of the drain-layer. When no external electric field is imposed, the depletion region of the p-n tunnel junction has an internal electric field that substantially points towards the source-tunneling-region and the drain-tunneling-region. The gate-dielectric is interfaced directly onto the drain-tunneling-region such that the drain-tunneling-region is between the source-tunneling-region and the gate-dielectric. The gate is interfaced onto the gate-dielectric such that the gate is configured to impose an external electric field which is oriented substantially in parallel to the internal electric field of the depletion region.
摘要翻译：低电压隧道场效应晶体管包括p-n隧道结，栅极 - 电介质，栅极，源极 - 接触和漏极 - 接触。 p-n隧道结包括将源极层和漏极层接合在一起的耗尽区域。耗尽区包括源极层的源极 - 沟道区域和漏极 - 层的漏极 - 隧穿区域。当不施加外部电场时，p-n隧道结的耗尽区具有基本上指向源极 - 隧穿区域和漏极 - 隧穿区域的内部电场。栅极电介质直接连接到漏极 - 隧穿区域上，使得漏极 - 隧穿区域在源极 - 隧穿区域和栅极 - 电介质之间。栅极连接到栅极 - 电介质上，使得栅极被配置为施加大致平行于耗尽区的内部电场定向的外部电场。

4. 发明授权

US08836446B2 Methods and apparatus for terahertz wave amplitude modulation 有权
标题翻译：用于太赫兹波幅度调制的方法和装置
公开(公告)号：US08836446B2
公开(公告)日：2014-09-16
申请号：US13529934
申请日：2012-06-21
申请人： Berardi Sensale-Rodriguez , Huili (Grace) Xing , Rusen Yan , Michelle M. Kelly , Tian Fang , Debdeep Jena , Lei Liu
发明人： Berardi Sensale-Rodriguez , Huili (Grace) Xing , Rusen Yan , Michelle M. Kelly , Tian Fang , Debdeep Jena , Lei Liu
IPC分类号： H03C1/02 , H03C7/00
CPC分类号： H03C1/02 , H03C7/00
摘要： A wave amplitude modulator for modulating a transmitted electromagnetic wave includes one or multiple self-gated capacitively coupled pair(s) of electron layers such as semiconductor or semimetal layers. Two electrical contacts are placed to each layer of electrons of the self-gated pair(s), and a power source is electrically connected to them. The power source, by varying the voltage applied between layers of electrons, tunes the electron density thereof, thereby adjusting the optical conductivity thereof, and the change in the optical conductivity of the layers of electrons causes an amplitude modulation of the transmitted electromagnetic wave passing through the capacitively coupled layers of electrons.
摘要翻译：用于调制发射的电磁波的波幅调制器包括一个或多个自门电容耦合的电子层对，例如半导体层或半金属层。两个电触头被放置到自门控对的每个电子层，并且电源与它们电连接。电源通过改变施加在电子层之间的电压调谐其电子密度，从而调节其光导率，并且电子层的光导率的变化引起通过的透射电磁波的幅度调制电容耦合的电子层。

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