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    • 5. 发明申请
    • TRENCH FORMING METHOD AND STRUCTURE
    • TRENCH形成方法和结构
    • US20100164075A1
    • 2010-07-01
    • US12344733
    • 2008-12-29
    • Alan Bernard BotulaMichael Lawrence GautschAlvin Jose JosephMax Gerald LevyJames Albert Slinkman
    • Alan Bernard BotulaMichael Lawrence GautschAlvin Jose JosephMax Gerald LevyJames Albert Slinkman
    • H01L23/58H01L21/467
    • H01L21/76283
    • An electrical structure and method of forming. The method includes providing a semiconductor structure comprising a semiconductor substrate, a buried oxide layer (BOX) formed over the semiconductor substrate, and a silicon on insulator layer (SOI) formed over and in contact with the BOX layer. The SOI layer comprises shallow trench isolation (STI) structures formed between electrical devices. A first photoresist layer is formed over the STI structures and the electrical devices. Portions of said first photoresist layer, portions of the STI structures, and portions of the BOX layer are removed resulting in formed trenches. Ion implants are formed within portions of the semiconductor substrate. Remaining portions of the first photoresist layer are removed. A dielectric layer is formed over the electrical devices and within the trenches. A second photoresist layer is formed over the dielectric layer. Portions of the second photoresist layer are removed.
    • 一种电气结构和成型方法。 该方法包括提供半导体结构,其包括半导体衬底,形成在半导体衬底上的掩埋氧化物层(BOX)以及在BOX层上形成并与BOX层接触的绝缘体上硅层。 SOI层包括在电气装置之间形成的浅沟槽隔离(STI)结构。 在STI结构和电气装置上形成第一光致抗蚀剂层。 所述第一光致抗蚀剂层的部分,STI结构的部分和BOX层的部分被去除,导致形成的沟槽。 离子植入物形成在半导体衬底的部分内。 去除第一光致抗蚀剂层的剩余部分。 电介质层形成在电气装置上并在沟槽内。 在电介质层上形成第二光致抗蚀剂层。 去除第二光致抗蚀剂层的部分。
    • 6. 发明授权
    • Trench forming method and structure
    • 沟槽成型方法和结构
    • US07772083B2
    • 2010-08-10
    • US12344733
    • 2008-12-29
    • Alan Bernard BotulaMichael Lawrence GautschAlvin Jose JosephMax Gerald LevyJames Albert Slinkman
    • Alan Bernard BotulaMichael Lawrence GautschAlvin Jose JosephMax Gerald LevyJames Albert Slinkman
    • H01L21/76
    • H01L21/76283
    • An electrical structure and method of forming. The method includes providing a semiconductor structure comprising a semiconductor substrate, a buried oxide layer (BOX) formed over the semiconductor substrate, and a silicon on insulator layer (SOI) formed over and in contact with the BOX layer. The SOI layer comprises shallow trench isolation (STI) structures formed between electrical devices. A first photoresist layer is formed over the STI structures and the electrical devices. Portions of said first photoresist layer, portions of the STI structures, and portions of the BOX layer are removed resulting in formed trenches. Ion implants are formed within portions of the semiconductor substrate. Remaining portions of the first photoresist layer are removed. A dielectric layer is formed over the electrical devices and within the trenches. A second photoresist layer is formed over the dielectric layer. Portions of the second photoresist layer are removed.
    • 一种电气结构和成型方法。 该方法包括提供半导体结构,其包括半导体衬底,形成在半导体衬底上的掩埋氧化物层(BOX)以及在BOX层上形成并与BOX层接触的绝缘体上硅层。 SOI层包括在电气装置之间形成的浅沟槽隔离(STI)结构。 在STI结构和电气装置上形成第一光致抗蚀剂层。 所述第一光致抗蚀剂层的部分,STI结构的部分和BOX层的部分被去除,导致形成的沟槽。 离子植入物形成在半导体衬底的部分内。 去除第一光致抗蚀剂层的剩余部分。 电介质层形成在电气装置上并在沟槽内。 在电介质层上形成第二光致抗蚀剂层。 去除第二光致抗蚀剂层的部分。