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    • 1. 发明授权
    • Microstrip array antenna
    • 微带阵列天线
    • US08624784B2
    • 2014-01-07
    • US12650012
    • 2009-12-30
    • Akiyoshi MizutaniTetsuya KatayamaKento Nakabayashi
    • Akiyoshi MizutaniTetsuya KatayamaKento Nakabayashi
    • H01Q1/38H01Q21/00
    • H01Q21/065H01Q21/0037
    • The present invention provides, as one aspect, a microstrip array antenna including a dielectric substrate, on a back face of which a conductive grounding plate is formed, and a strip conductor formed on the dielectric substrate. The strip conductor comprises a feeding strip line which extends in an extension direction, and at least two radiation antenna elements. At least one of the antenna elements is connected with one side of the strip line, and at least one of the antenna elements is connected with the other side of the strip line. The longitudinal directions of the antenna elements are parallel to each other and are at an angle of other than 90° with respect to the extension direction. The strip line has a bending shape and fully extends in the extension direction so that the antenna elements are connected with the strip line at the same angle.
    • 本发明作为一个方面提供了一种微带阵列天线,其包括在其背面上形成有导电接地板的电介质基板和形成在电介质基板上的带状导体。 带状导体包括沿延伸方向延伸的馈送带状线和至少两个辐射天线元件。 天线元件中的至少一个与带状线的一侧连接,并且至少一个天线元件与带状线的另一侧连接。 天线元件的纵向方向彼此平行并且相对于延伸方向成90°以外的角度。 带状线具有弯曲形状并且在延伸方向上完全延伸,使得天线元件以相同的角度与带状线连接。
    • 7. 发明授权
    • Method of producing a MESFET semiconductor device having a recessed gate
structure
    • 一种具有凹陷栅极结构的MESFET半导体器件的制造方法
    • US06117713A
    • 2000-09-12
    • US19163
    • 1998-02-06
    • Koichi HoshinoTetsuya Katayama
    • Koichi HoshinoTetsuya Katayama
    • H01L29/41H01L21/335H01L21/338H01L29/812
    • H01L29/66431H01L29/66848
    • An insulating layer is formed on a semiconductor substrate, and a first resist layer having a first resist opening portion is formed on the insulating layer. Then, the insulating layer is etched thought the opening portion to expose the substrate. After removing the first resist layer, a second resist layer having second resist opening portions are formed. One of the second resist opening portions is provided to expose the substrate, and a recess is formed in the substrate through the opening portion. Further, the insulating layer exposed from the other of the second resist opening portions is removed. Then, an electrode member for gate, source, and drain electrodes is deposited on the substrate. As a result, variations in intervals between the gate and drain electrodes and between the gate and source electrodes can be reduced.
    • 在半导体基板上形成绝缘层,在绝缘层上形成具有第一抗蚀剂开口部的第一抗蚀剂层。 然后,认为绝缘层被认为是用于露出衬底的开口部分。 在去除第一抗蚀剂层之后,形成具有第二抗蚀剂开口部分的第二抗蚀剂层。 设置第二抗蚀剂开口部之一以露出基板,并且通过开口部在基板中形成凹部。 此外,从第二抗蚀剂开口部分中的另一个露出的绝缘层被去除。 然后,在基板上沉积用于栅极,源极和漏极的电极部件。 结果,可以减小栅极和漏极之间以及栅极和源极之间的间隔的变化。
    • 8. 发明授权
    • Analog switching circuit
    • 模拟开关电路
    • US5994744A
    • 1999-11-30
    • US898752
    • 1997-07-23
    • Tetsuya KatayamaTakeshi MikiJunji HayakawaHiroyuki Ban
    • Tetsuya KatayamaTakeshi MikiJunji HayakawaHiroyuki Ban
    • H01L27/02H03K17/082H01L29/72
    • H03K17/0822H01L27/0251H01L27/0266H03K2217/0018
    • An analog switching circuit comprises an insulated-gate field-effect transistor (Q20) having two n-type input-side and outpu-side semiconductor regions (201, 202) and a p-type semiconductor substrate region 203, for controlling conductiveness between an input terminal (IN) and an output terminal (OUT) based on a gate potential. A surge pulse detecting circuit (1020), responsive to an electric potential (Vi) of the input terminal (IN), produces a detection signal of a surge pulse equivalent to a forward bias of a PN junction formed between the semiconductor substrate region (203) and the input-side semiconductor region (201). A substrate potential setting circuit (1010) varies an electric potential of the semiconductor substrate region (203) in response to the electric potential (Vi) of the input terminal (IN) when aby detection signal is produced. Furthermore, a gate potential control circuit (1030) varies the gate potential of the insulated-gate field-effect transistor (Q20) in the same direction as the electric potential of the semiconductor substrate region (203) when the detection signal is produced.
    • 模拟开关电路包括具有两个n型输入侧和外侧半导体区域(201,202)和p型半导体衬底区域203的绝缘栅场效应晶体管(Q20),用于控制导电性 输入端子(IN)和输出端子(OUT)。 响应于输入端子(IN)的电位(Vi)的浪涌脉冲检测电路(1020)产生与在半导体衬底区域(203)之间形成的PN结的正向偏压相当的浪涌脉冲的检测信号 )和输入侧半导体区域(201)。 基板电位设定电路(1010)响应于当产生aby检测信号时的输入端子(IN)的电位(Vi),改变半导体衬底区域(203)的电位。 此外,当产生检测信号时,栅极电位控制电路(1030)在与半导体衬底区域(203)的电位相同的方向上改变绝缘栅极场效应晶体管(Q20)的栅极电位。
    • 9. 发明授权
    • Composite bearing structure
    • 复合轴承结构
    • US5675201A
    • 1997-10-07
    • US295623
    • 1994-08-24
    • Osamu KomuraTetsuya KatayamaAkira YamakawaKenji MatsunumaNorio YasuokaMatsuo HiguchiMasaya Miyake
    • Osamu KomuraTetsuya KatayamaAkira YamakawaKenji MatsunumaNorio YasuokaMatsuo HiguchiMasaya Miyake
    • F16C17/02F16C32/00F16C32/04F16C33/10F16C33/24F16C39/06H02K7/08H02K7/09
    • F16C32/0427F16C17/107F16C32/0431F16C33/107F16C39/063
    • A composite bearing structure that has a high rotational accuracy and that can withstand high-speed rotation comprises first bearing means, second bearing means, third bearing means and fourth bearing means. The first bearing means supports a radial impact force which is applied to a rotator during rotation, and is formed by an inner ring (1) and an outer ring (2) consisting of silicon nitride ceramics sintered bodies. The second bearing means supports an axial load which is applied to the rotator while maintaining a prescribed clearance with the rotator, and is formed by a magnetic bearing body of two permanent magnets (12) and (13) which are thrust-directionally opposed to each other. The third bearing means maintains the radial rotational accuracy of the rotator, and is formed by a radial dynamic pressure producing groove (5) which is formed in a cylindrical surface of the inner ring (1). The fourth bearing means maintains the thrust-directional rotational accuracy of the rotator, and is formed by an air dome portion (100) which is confined in a semi-closed state by the inner ring (1), the outer ring (2) and a cover (4).
    • PCT No.PCT / JP94 / 00002 Sec。 371日期:1994年8月24日 102(e)日期1994年8月24日PCT 1994年1月4日PCT PCT。 公开号WO94 / 16233 PCT 日期1994年7月21日具有高旋转精度并能承受高速旋转的复合轴承结构包括第一轴承装置,第二轴承装置,第三轴承装置和第四轴承装置。 第一轴承装置支撑在旋转期间施加到旋转器的径向冲击力,并且由内环(1)和由氮化硅陶瓷烧结体组成的外圈(2)形成。 第二轴承装置支撑轴向载荷,该轴向载荷与旋转体保持规定的间隙,并且由两个永磁体(12)和(13)的磁轴承体形成,该永磁体与每个 其他。 第三轴承装置维持旋转体的径向旋转精度,并且由形成在内圈(1)的圆柱形表面中的径向动压产生槽(5)形成。 第四轴承装置保持旋转体的推力定向旋转精度,并且由内圈(1),外圈(2)和外圈(1)限定在半闭合状态的空气圆顶部(100)形成, 盖(4)。