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1. 发明授权

US5641353A Low hydrogen-content silicon crystal with few micro-defects caused from annealing 失效
标题翻译：低含量硅晶体，退火几乎没有微缺陷
公开(公告)号：US5641353A
公开(公告)日：1997-06-24
申请号：US565592
申请日：1995-11-30
申请人： Akito Hara , Masaaki Koizuka
发明人： Akito Hara , Masaaki Koizuka
IPC分类号： C30B15/02 , C30B29/06 , C30B33/00 , G01N27/00 , H01L21/322 , H01L21/66 , C30B15/14
CPC分类号： C30B29/06 , C30B33/00 , H01L21/3225
摘要： The present invention is to manufacture a low hydrogen-concentration silicon crystal having less micro defects caused from oxygen precipitation generated during an annealing process. Particularly, a silicon crystal including hydrogen concentration lower than 0.55.times.10.sup.11 cm.sup.-3, where the hydrogen concentration dependency is small and the micro defect density is less, may be used for a substrate of semiconductor devices. The low hydrogen-concentration silicon substrate is manufactured by measuring the hydrogen concentrations in a silicon crystal and in a hydrogen-doped silicon crystal having a known hydrogen concentration, where both the silicon crystals have been annealed at an equal condition so as to generate thermal donors therein, and by comparing thus measured hydrogen concentrations. The known hydrogen-doped silicon crystal has been prepared by a hydrogen-diffusing annealing in a hydrogen containing atmosphere, where the hydrogen concentration is calculated from the hydrogen partial pressure and the temperature of the annealing.
摘要翻译：本发明是制造在退火工序中产生的氧沉淀引起的微小缺陷少的低氢浓度硅晶体。特别地，半导体器件的基板可以使用氢浓度低于0.55×10 11 cm -3的硅晶体，其氢浓度依赖性小，微缺陷密度较小。通过测量硅晶体中的氢浓度和具有已知氢浓度的氢掺杂硅晶体制造低氢浓度硅衬底，其中两个硅晶体已经在相等的条件下退火，以便产生热供体并通过比较如此测量的氢浓度。已知的氢掺杂硅晶体已经通过在含氢气氛中的氢扩散退火制备，其中氢浓度由氢分压和退火温度计算。

2. 发明授权

US5505157A Low hydrogen-content silicon crystal with few micro-defects caused from annealing, and its manufacturing methods 失效
标题翻译：低含氢硅晶体，退火几乎没有微缺陷及其制造方法
公开(公告)号：US5505157A
公开(公告)日：1996-04-09
申请号：US249202
申请日：1994-05-26
申请人： Akito Hara , Masaaki Koizuka
发明人： Akito Hara , Masaaki Koizuka
IPC分类号： C30B15/02 , C30B29/06 , C30B33/00 , G01N27/00 , H01L21/322 , H01L21/66 , C30B33/02
CPC分类号： C30B29/06 , C30B33/00 , H01L21/3225
摘要： The present invention is to manufacture a low hydrogen-concentration silicon crystal having less micro defects caused from oxygen precipitation generated during an annealing process. Particularly, a silicon crystal including hydrogen concentration lower than 0.55.times.10.sup.11 cm.sup.-3, where the hydrogen concentration dependency is small and the micro defect density is less, may be used for a substrate of semiconductor devices. The low hydrogen-concentration silicon substrate is manufactured by measuring the hydrogen concentrations in a silicon crystal and in a hydrogen-doped silicon crystal having a known hydrogen concentration, where both the silicon crystals have been annealed at an equal condition so as to generated thermal donors therein, and by comparing thus measured hydrogen concentrations. The known hydrogen-doped silicon crystal has been prepared by a hydrogen-diffusing annealing in a hydrogen containing atmosphere, where the hydrogen concentration is calculated from the hydrogen partial pressure and the temperature of the annealing.
摘要翻译：本发明是制造在退火工序中产生的氧沉淀引起的微小缺陷少的低氢浓度硅晶体。特别地，半导体器件的基板可以使用氢浓度低于0.55×10 11 cm -3的硅晶体，其氢浓度依赖性小，微缺陷密度较小。通过测量硅晶体中的氢浓度和具有已知氢浓度的氢掺杂硅晶体制造低氢浓度硅衬底，其中两个硅晶体已经在相等的条件下退火，从而产生热供体并通过比较如此测量的氢浓度。已知的氢掺杂硅晶体已经通过在含氢气氛中的氢扩散退火制备，其中氢浓度由氢分压和退火温度计算。

3. 发明授权

US07795619B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07795619B2
公开(公告)日：2010-09-14
申请号：US11138431
申请日：2005-05-27
申请人： Akito Hara
发明人： Akito Hara
IPC分类号： H01L31/036
CPC分类号： H01L23/585 , H01L21/76807 , H01L21/84 , H01L23/53228 , H01L27/12 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device, including the steps of: forming a shielding film 38 on a first insulating film 37; sequentially forming a second insulating film 39 and an amorphous semiconductor film 40 on the shielding film 38; melting the amorphous semiconductor film 40 at least in portions to be channels of thin-film transistors by irradiating an energy beam onto the amorphous semiconductor film 40, and converting the amorphous semiconductor film 40 into a polycrystalline semiconductor film 41; sequentially forming a gate insulating film 43a and a gate electrode 44a on the polycrystalline semiconductor film 41 on the channels; and forming source and drain regions 41a in the polycrystalline semiconductor film 41 on sides of the gate electrode 44a, and forming a TFT 60 by use of the source and drain regions 41a, the gate insulating film 43a, and the gate electrode 44a.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：在第一绝缘膜37上形成屏蔽膜38; 在屏蔽膜38上依次形成第二绝缘膜39和非晶半导体膜40; 通过将能量束照射到非晶半导体膜40上，将非晶半导体膜40至少部分地熔融成为薄膜晶体管的沟道，并将非晶半导体膜40转换为多晶半导体膜41; 在通道上的多晶半导体膜41上依次形成栅极绝缘膜43a和栅电极44a; 以及在多晶半导体膜41中在栅电极44a的侧面上形成源极和漏极区域41a，并且通过使用源极和漏极区域41a，栅极绝缘膜43a和栅极电极44a形成TFT60。

4. 发明授权

US06821343B2 Semiconductor device, manufacturing method therefor, and semiconductor manufacturing apparatus 有权
标题翻译：半导体装置及其制造方法以及半导体制造装置
公开(公告)号：US06821343B2
公开(公告)日：2004-11-23
申请号：US10293753
申请日：2002-11-13
申请人： Akito Hara , Fumiyo Takeuchi , Kenichi Yoshino , Nobuo Sasaki
发明人： Akito Hara , Fumiyo Takeuchi , Kenichi Yoshino , Nobuo Sasaki
IPC分类号： C30B3500
CPC分类号： H01L21/02683 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/02678 , H01L21/02691 , H01L21/2026 , H01L27/1281 , H01L27/1285 , H01L29/66757 , H01L29/78675 , H01L29/78696 , Y10S117/904 , Y10T117/10
摘要： A semiconductor manufacturing apparatus emits an energy beam for crystallizing a semiconductor film formed on a substrate. The apparatus can output a plurality of energy beams continuously in relation to time and move the energy beams to scan a target to be irradiated. The output instability of the energy beam is smaller than ±1%/h. The noise (optical noise) indicating the instability of the energy beam can be not more than 0.1 rms %.
摘要翻译：半导体制造装置发射用于结晶形成在基板上的半导体膜的能量束。该装置可以相对于时间连续地输出多个能量束，并且移动能量束以扫描待照射的目标。能量束的输出不稳定性小于±1％/ h。指示能量束不稳定的噪声（光学噪声）可以不大于0.1 rms％。

5. 发明授权

US5970369A Semiconductor device with polysilicon layer of good crystallinity and its manufacture method 失效
标题翻译：具有多晶硅层的半导体器件具有良好的结晶度及其制造方法
公开(公告)号：US5970369A
公开(公告)日：1999-10-19
申请号：US976012
申请日：1997-11-21
申请人： Akito Hara , Satoshi Murakami , Kuninori Kitahara
发明人： Akito Hara , Satoshi Murakami , Kuninori Kitahara
IPC分类号： H01L21/20 , H01L21/336 , H01L29/786
CPC分类号： H01L21/2026
摘要： A multilayer polysilicon semiconductor device having a first layer of amorphous semiconductor deposited on the surface of an underlying substrate. The first layer is polycrystallized by applying an energy beam to the first layer. A second layer is deposited on the surface of the polycrystallized first layer, the second layer being made of amorphous semiconductor having the same composition as the first layer or polycrystalline semiconductor. Crystallinity of the second layer is changed by applying an energy beam to the second layer. The substrate may be heated when the energy beam is applied to the second layer.
摘要翻译：一种多层多晶硅半导体器件，具有沉积在下面的衬底的表面上的第一非晶半导体层。第一层通过向第一层施加能量束而多晶化。第二层沉积在多结晶第一层的表面上，第二层由具有与第一层或多晶半导体相同组成的非晶半导体制成。通过向第二层施加能量束来改变第二层的结晶度。当能量束施加到第二层时，衬底可以被加热。

6. 发明授权

US08264012B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08264012B2
公开(公告)日：2012-09-11
申请号：US12908231
申请日：2010-10-20
申请人： Akito Hara
发明人： Akito Hara
IPC分类号： H01L29/76
CPC分类号： H01L29/1054 , H01L21/26506 , H01L29/165 , H01L29/66636 , H01L29/78 , H01L29/7848
摘要： A semiconductor device includes a field effect transistor and a strain generating layer to apply a stress to a channel region of the field effect transistor. The strain generating layer contains at least one of oxygen and nitrogen of 1.0×1018 cm−3 to 5.0×1019 cm−3, or alternatively, the strain generating layer contains self-interstitial atoms and/or vacancies of 1.0×1018 cm−3 to 5.0×1019 cm−3. In the latter case, at least a portion of the self-interstitial atoms and/or the vacancies exist as a cluster.
摘要翻译：半导体器件包括场效应晶体管和应力产生层，以向场效应晶体管的沟道区域施加应力。应变产生层含有1.0×10 18 cm -3〜5.0×10 19 cm -3的氧和氮中的至少一种，或者，应变产生层含有1.0×10 18 cm -3的自间隙原子和/或空位至5.0×1019cm-3。在后一种情况下，至少一部分自间隙原子和/或空位作为簇存在。

7. 发明申请

US20060170046A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060170046A1
公开(公告)日：2006-08-03
申请号：US11138431
申请日：2005-05-27
申请人： Akito Hara
发明人： Akito Hara
IPC分类号： H01L27/12
CPC分类号： H01L23/585 , H01L21/76807 , H01L21/84 , H01L23/53228 , H01L27/12 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device, including the steps of: forming a shielding film 38 on a first insulating film 37; sequentially forming a second insulating film 39 and an amorphous semiconductor film 40 on the shielding film 38; melting the amorphous semiconductor film 40 at least in portions to be channels of thin-film transistors by irradiating an energy beam onto the amorphous semiconductor film 40, and converting the amorphous semiconductor film 40 into a polycrystalline semiconductor film 41; sequentially forming a gate insulating film 43a and a gate electrode 44a on the polycrystalline semiconductor film 41 on the channels; and forming source and drain regions 41a in the polycrystalline semiconductor film 41 on sides of the gate electrode 44a, and forming a TFT 60 by use of the source and drain regions 41a, the gate insulating film 43a, and the gate electrode 44a.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：在第一绝缘膜37上形成屏蔽膜38; 在屏蔽膜38上依次形成第二绝缘膜39和非晶半导体膜40; 通过将能量束照射到非晶半导体膜40上，将非晶半导体膜40至少部分地熔融成为薄膜晶体管的沟道，并将非晶半导体膜40转换为多晶半导体膜41; 在通道上的多晶半导体膜41上依次形成栅极绝缘膜43a和栅极电极44a; 以及在多晶半导体膜41中在栅极电极44a的侧面上形成源极和漏极区域41a，并且通过使用源极和漏极区域41a，栅极绝缘膜43a和栅极电极形成TFT60 44 a。

8. 发明授权

US06909118B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06909118B2
公开(公告)日：2005-06-21
申请号：US10790875
申请日：2004-03-02
申请人： Akito Hara
发明人： Akito Hara
IPC分类号： H01L29/423 , H01L21/20 , H01L21/336 , H01L29/49 , H01L29/786 , H01L29/04 , H01L27/01 , H01L27/12 , H01L29/76 , H01L31/036 , H01L31/112
CPC分类号： H01L29/6675 , H01L29/4908 , H01L29/78603 , H01L29/78648 , H01L29/78672
摘要： A TFT capable of showing a large gm (large ON-current) and having characteristics comparable to those of Si-MOSFET despite of its relatively simple configuration was fabricated by the steps of coating, for example, a positive photo-resist on an Mo film; subjecting the photo-resist to back light exposure from the glass-substrate side under masking with a bottom gate electrode, to thereby form a resist pattern having the same geometry and being aligned with the bottom gate electrode because exposure light is intercepted by the bottom gate electrode but can travel through the Mo film; and etching the Mo film under masking by the resist pattern to thereby form a top gate electrode in conformity with the geometry of the resist pattern in a self-aligned manner.
摘要翻译：通过在Mo膜上涂布例如正性光致抗蚀剂的步骤来制造能够显示大的gm（大的导通电流）并且具有与Si-MOSFET相当的特性的TFT， ; 使用光刻胶从底部栅电极掩蔽下的玻璃衬底侧反射曝光，从而形成具有相同几何形状并与底栅电极对准的抗蚀剂图案，因为曝光光被底栅截取电极，但可以穿过Mo膜; 并且通过抗蚀剂图案在掩蔽下蚀刻Mo膜，从而以自对准的方式形成与抗蚀剂图案的几何形状一致的顶栅电极。

9. 发明授权

US06861328B2 Semiconductor device, manufacturing method therefor, and semiconductor manufacturing apparatus 有权
标题翻译：半导体装置及其制造方法以及半导体制造装置
公开(公告)号：US06861328B2
公开(公告)日：2005-03-01
申请号：US10293873
申请日：2002-11-13
申请人： Akito Hara , Fumiyo Takeuchi , Kenichi Yoshino , Nobuo Sasaki
发明人： Akito Hara , Fumiyo Takeuchi , Kenichi Yoshino , Nobuo Sasaki
IPC分类号： G02F1/1345 , G02F1/136 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786 , H01L21/00
CPC分类号： H01L21/02683 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/02678 , H01L21/02691 , H01L21/2026 , H01L27/1281 , H01L27/1285 , H01L29/66757 , H01L29/78675 , H01L29/78696 , Y10S117/904 , Y10T117/10
摘要： An a-Si film is patterned into a linear shape (ribbon shape) or island shape on a glass substrate. The upper surface of the a-Si film or the lower surface of the glass substrate is irradiated and scanned with an energy beam output continuously along the time axis from a CW laser in a direction indicated by an arrow, thereby crystallizing the a-Si film. This implements a TFT in which the transistor characteristics of the TFT are made uniform at high level, and the mobility is high particularly in a peripheral circuit region to enable high-speed driving in applications to a system-on glass and the like.
摘要翻译：将a-Si膜图案化为玻璃基板上的线状（带状）或岛状。 a-Si膜的上表面或玻璃基板的下表面用沿箭头所示方向的CW激光沿着时间轴连续输出的能量束照射并扫描，从而使a-Si膜结晶。这实现了TFT的晶体管特性在高电平上均匀，并且特别是在周边电路区域中的迁移率高，以使得能够在应用于系统玻璃等的高速驱动中实现TFT。

10. 发明授权

US06582996B1 Semiconductor thin film forming method 有权
标题翻译：半导体薄膜形成方法
公开(公告)号：US06582996B1
公开(公告)日：2003-06-24
申请号：US09650641
申请日：2000-08-30
申请人： Akito Hara , Nobuo Sasaki
发明人： Akito Hara , Nobuo Sasaki
IPC分类号： H01L2184
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/2026 , H01L27/1281 , H01L29/04 , H01L29/66757 , H01L29/66772 , H01L29/78654 , H01L29/78675 , H01L29/78696
摘要： A polycrystal thin film forming method comprising the step of forming a semiconductor thin film on a substrate 14, and the step of flowing a heated gas to the semiconductor thin film while an energy beam 38 is being applied to the semiconductor thin film at a region to which the gas is being applied to thereby melt the semiconductor film, and crystallizing the semiconductor thin film in its solidification. The energy beam is applied while the high-temperature gas is being flowed, whereby the melted semiconductor thin film can have low solidification rate, whereby the polycrystal thin film can have large crystal grain diameters and can have good quality of little defects in crystal grains and little twins.
摘要翻译：一种多晶薄膜形成方法，包括在衬底14上形成半导体薄膜的步骤，以及将能量束38在一个区域施加到半导体薄膜的同时使加热的气体流到半导体薄膜的步骤，将该气体施加于熔融半导体膜，并使其半导体薄膜凝固。当高温气体流动时施加能量束，由此熔融的半导体薄膜可以具有低固化速率，由此多晶薄膜可以具有大的晶粒直径，并且可以具有良好的晶粒缺陷质量，小双胞胎

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