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1. 发明申请

US20090045471A1 Semiconductor device fabricated by selective epitaxial growth method 有权
标题翻译：通过选择性外延生长法制造的半导体器件
公开(公告)号：US20090045471A1
公开(公告)日：2009-02-19
申请号：US12230373
申请日：2008-08-28
申请人： Masahiro Fukuda , Yosuke Shimamune , Masaaki Koizuka , Katsuaki Ookoshi
发明人： Masahiro Fukuda , Yosuke Shimamune , Masaaki Koizuka , Katsuaki Ookoshi
IPC分类号： H01L47/00
CPC分类号： H01L29/7833 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L29/165 , H01L29/6656 , H01L29/66636 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device in which selectivity in epitaxial growth is improved. There is provided a semiconductor device comprising a gate electrode formed over an Si substrate, which is a semiconductor substrate, with a gate insulating film therebetween and an insulating layer formed over sides of the gate electrode and containing a halogen element. With this semiconductor device, a silicon nitride film which contains the halogen element is formed over the sides of the gate electrode when an SiGe layer is formed over the Si substrate. Therefore, the SiGe layer epitaxial-grows over the Si substrate with high selectivity. As a result, an OFF-state leakage current which flows between, for example, the gate electrode and source/drain regions is suppressed and a manufacturing process suitable for actual mass production is established.
摘要翻译：提高外延生长中的选择性的半导体器件。提供了一种半导体器件，其包括形成在作为半导体衬底的Si衬底上的栅电极，其间具有栅极绝缘膜，并且在栅电极的侧面上形成并包含卤素元素的绝缘层。利用该半导体器件，当在Si衬底上形成SiGe层时，在栅电极的侧面上形成含有卤素元素的氮化硅膜。因此，SiGe层以高选择性外延生长在Si衬底上。结果，抑制了在例如栅电极和源极/漏极区域之间流动的截止状态的漏电流，并且建立了适合于实际批量生产的制造工艺。

2. 发明申请

US20070200203A1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070200203A1
公开(公告)日：2007-08-30
申请号：US11717205
申请日：2007-03-13
申请人： Masahiro Fukuda , Yosuke Shimamune , Masaaki Koizuka , Katsuaki Ookoshi
发明人： Masahiro Fukuda , Yosuke Shimamune , Masaaki Koizuka , Katsuaki Ookoshi
IPC分类号： H01L23/58 , H01L21/20 , H01L21/471
CPC分类号： H01L29/7833 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L29/165 , H01L29/6656 , H01L29/66636 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device in which selectivity in epitaxial growth is improved. There is provided a semiconductor device comprising a gate electrode formed over an Si substrate, which is a semiconductor substrate, with a gate insulating film therebetween and an insulating layer formed over sides of the gate electrode and containing a halogen element. With this semiconductor device, a silicon nitride film which contains the halogen element is formed over the sides of the gate electrode when an SiGe layer is formed over the Si substrate. Therefore, the SiGe layer epitaxial-grows over the Si substrate with high selectivity. As a result, an OFF-state leakage current which flows between, for example, the gate electrode and source/drain regions is suppressed and a manufacturing process suitable for actual mass production is established.
摘要翻译：提高外延生长中的选择性的半导体器件。提供了一种半导体器件，其包括形成在作为半导体衬底的Si衬底上的栅电极，其间具有栅极绝缘膜，并且在栅电极的侧面上形成并包含卤素元素的绝缘层。利用该半导体器件，当在Si衬底上形成SiGe层时，在栅电极的侧面上形成含有卤素元素的氮化硅膜。因此，SiGe层以高选择性外延生长在Si衬底上。结果，抑制了在例如栅电极和源极/漏极区域之间流动的截止状态的漏电流，并且建立了适合于实际批量生产的制造工艺。

3. 发明授权

US07679147B2 Semiconductor device fabricated by selective epitaxial growth method 有权
标题翻译：通过选择性外延生长法制造的半导体器件
公开(公告)号：US07679147B2
公开(公告)日：2010-03-16
申请号：US12230373
申请日：2008-08-28
申请人： Masahiro Fukuda , Yosuke Shimamune , Masaaki Koizuka , Katsuaki Ookoshi
发明人： Masahiro Fukuda , Yosuke Shimamune , Masaaki Koizuka , Katsuaki Ookoshi
IPC分类号： H01L47/00
CPC分类号： H01L29/7833 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L29/165 , H01L29/6656 , H01L29/66636 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device in which selectivity in epitaxial growth is improved. There is provided a semiconductor device comprising a gate electrode formed over an Si substrate, which is a semiconductor substrate, with a gate insulating film therebetween and an insulating layer formed over sides of the gate electrode and containing a halogen element. With this semiconductor device, a silicon nitride film which contains the halogen element is formed over the sides of the gate electrode when an SiGe layer is formed over the Si substrate. Therefore, the SiGe layer epitaxial-grows over the Si substrate with high selectivity. As a result, an OFF-state leakage current which flows between, for example, the gate electrode and source/drain regions is suppressed and a manufacturing process suitable for actual mass production is established.
摘要翻译：提高外延生长中的选择性的半导体器件。提供了一种半导体器件，其包括形成在作为半导体衬底的Si衬底上的栅电极，其间具有栅极绝缘膜，并且在栅电极的侧面上形成含有卤素元素的绝缘层。利用该半导体器件，当在Si衬底上形成SiGe层时，在栅电极的侧面上形成含有卤素元素的氮化硅膜。因此，SiGe层以高选择性外延生长在Si衬底上。结果，抑制了在例如栅电极和源极/漏极区域之间流动的截止状态的漏电流，并且建立了适合于实际批量生产的制造工艺。

4. 发明授权

US07446394B2 Semiconductor device fabricated by selective epitaxial growth method 有权
标题翻译：通过选择性外延生长法制造的半导体器件
公开(公告)号：US07446394B2
公开(公告)日：2008-11-04
申请号：US11717205
申请日：2007-03-13
申请人： Masahiro Fukuda , Yosuke Shimamune , Masaaki Koizuka , Katsuaki Ookoshi
发明人： Masahiro Fukuda , Yosuke Shimamune , Masaaki Koizuka , Katsuaki Ookoshi
IPC分类号： H01L23/58 , H01L21/20 , H01L21/471
CPC分类号： H01L29/7833 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L29/165 , H01L29/6656 , H01L29/66636 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device in which selectivity in epitaxial growth is improved. There is provided a semiconductor device comprising a gate electrode formed over an Si substrate, which is a semiconductor substrate, with a gate insulating film therebetween and an insulating layer formed over sides of the gate electrode and containing a halogen element. With this semiconductor device, a silicon nitride film which contains the halogen element is formed over the sides of the gate electrode when an SiGe layer is formed over the Si substrate. Therefore, the SiGe layer epitaxial-grows over the Si substrate with high selectivity. As a result, an OFF-state leakage current which flows between, for example, the gate electrode and source/drain regions is suppressed and a manufacturing process suitable for actual mass production is established.
摘要翻译：提高外延生长中的选择性的半导体器件。提供了一种半导体器件，其包括形成在作为半导体衬底的Si衬底上的栅电极，其间具有栅极绝缘膜，并且在栅电极的侧面上形成并包含卤素元素的绝缘层。利用该半导体器件，当在Si衬底上形成SiGe层时，在栅电极的侧面上形成含有卤素元素的氮化硅膜。因此，SiGe层以高选择性外延生长在Si衬底上。结果，抑制了在例如栅电极和源极/漏极区域之间流动的截止状态的漏电流，并且建立了适合于实际批量生产的制造工艺。

5. 发明授权

US5641353A Low hydrogen-content silicon crystal with few micro-defects caused from annealing 失效
标题翻译：低含量硅晶体，退火几乎没有微缺陷
公开(公告)号：US5641353A
公开(公告)日：1997-06-24
申请号：US565592
申请日：1995-11-30
申请人： Akito Hara , Masaaki Koizuka
发明人： Akito Hara , Masaaki Koizuka
IPC分类号： C30B15/02 , C30B29/06 , C30B33/00 , G01N27/00 , H01L21/322 , H01L21/66 , C30B15/14
CPC分类号： C30B29/06 , C30B33/00 , H01L21/3225
摘要： The present invention is to manufacture a low hydrogen-concentration silicon crystal having less micro defects caused from oxygen precipitation generated during an annealing process. Particularly, a silicon crystal including hydrogen concentration lower than 0.55.times.10.sup.11 cm.sup.-3, where the hydrogen concentration dependency is small and the micro defect density is less, may be used for a substrate of semiconductor devices. The low hydrogen-concentration silicon substrate is manufactured by measuring the hydrogen concentrations in a silicon crystal and in a hydrogen-doped silicon crystal having a known hydrogen concentration, where both the silicon crystals have been annealed at an equal condition so as to generate thermal donors therein, and by comparing thus measured hydrogen concentrations. The known hydrogen-doped silicon crystal has been prepared by a hydrogen-diffusing annealing in a hydrogen containing atmosphere, where the hydrogen concentration is calculated from the hydrogen partial pressure and the temperature of the annealing.
摘要翻译：本发明是制造在退火工序中产生的氧沉淀引起的微小缺陷少的低氢浓度硅晶体。特别地，半导体器件的基板可以使用氢浓度低于0.55×10 11 cm -3的硅晶体，其氢浓度依赖性小，微缺陷密度较小。通过测量硅晶体中的氢浓度和具有已知氢浓度的氢掺杂硅晶体制造低氢浓度硅衬底，其中两个硅晶体已经在相等的条件下退火，以便产生热供体并通过比较如此测量的氢浓度。已知的氢掺杂硅晶体已经通过在含氢气氛中的氢扩散退火制备，其中氢浓度由氢分压和退火温度计算。

6. 发明授权

US08497191B2 Selective epitaxial growth method using halogen containing gate sidewall mask 有权
标题翻译：选择性外延生长法使用含卤素的侧壁面罩
公开(公告)号：US08497191B2
公开(公告)日：2013-07-30
申请号：US12285723
申请日：2008-10-14
申请人： Masahiro Fukuda , Yosuke Shimamune , Masaaki Koizuka , Katsuaki Ookoshi
发明人： Masahiro Fukuda , Yosuke Shimamune , Masaaki Koizuka , Katsuaki Ookoshi
IPC分类号： H01L21/20 , H01L21/31
CPC分类号： H01L29/7833 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L29/165 , H01L29/6656 , H01L29/66636 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device in which selectivity in epitaxial growth is improved. There is provided a semiconductor device comprising a gate electrode formed over an Si substrate, which is a semiconductor substrate, with a gate insulating film therebetween and an insulating layer formed over sides of the gate electrode and containing a halogen element. With this semiconductor device, a silicon nitride film which contains the halogen element is formed over the sides of the gate electrode when an SiGe layer is formed over the Si substrate. Therefore, the SiGe layer epitaxial-grows over the Si substrate with high selectivity. As a result, an OFF-state leakage current which flows between, for example, the gate electrode and source/drain regions is suppressed and a manufacturing process suitable for actual mass production is established.
摘要翻译：提高了外延生长中的选择性的半导体器件。提供了一种半导体器件，其包括形成在作为半导体衬底的Si衬底上的栅电极，其间具有栅极绝缘膜，并且在栅电极的侧面上形成并包含卤素元素的绝缘层。利用该半导体器件，当在Si衬底上形成SiGe层时，在栅电极的侧面上形成含有卤素元素的氮化硅膜。因此，SiGe层以高选择性外延生长在Si衬底上。结果，抑制了在例如栅电极和源极/漏极区域之间流动的截止状态的漏电流，并且建立了适合于实际批量生产的制造工艺。

7. 发明申请

US20090117715A1 Semiconductor device fabricated by selective epitaxial growth method 有权
公开(公告)号：US20090117715A1
公开(公告)日：2009-05-07
申请号：US12285723
申请日：2008-10-14
申请人： Masahiro Fukuda , Yosuke Shimamune , Masaaki Koizuka , Katsuaki Ookoshi
发明人： Masahiro Fukuda , Yosuke Shimamune , Masaaki Koizuka , Katsuaki Ookoshi
IPC分类号： H01L21/20 , H01L21/31 , H01L21/469 , H01L21/04
CPC分类号： H01L29/7833 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L29/165 , H01L29/6656 , H01L29/66636 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device in which selectivity in epitaxial growth is improved. There is provided a semiconductor device comprising a gate electrode formed over an Si substrate, which is a semiconductor substrate, with a gate insulating film therebetween and an insulating layer formed over sides of the gate electrode and containing a halogen element. With this semiconductor device, a silicon nitride film which contains the halogen element is formed over the sides of the gate electrode when an SiGe layer is formed over the Si substrate. Therefore, the SiGe layer epitaxial-grows over the Si substrate with high selectivity. As a result, an OFF-state leakage current which flows between, for example, the gate electrode and source/drain regions is suppressed and a manufacturing process suitable for actual mass production is established.

8. 发明授权

US5505157A Low hydrogen-content silicon crystal with few micro-defects caused from annealing, and its manufacturing methods 失效
标题翻译：低含氢硅晶体，退火几乎没有微缺陷及其制造方法
公开(公告)号：US5505157A
公开(公告)日：1996-04-09
申请号：US249202
申请日：1994-05-26
申请人： Akito Hara , Masaaki Koizuka
发明人： Akito Hara , Masaaki Koizuka
IPC分类号： C30B15/02 , C30B29/06 , C30B33/00 , G01N27/00 , H01L21/322 , H01L21/66 , C30B33/02
CPC分类号： C30B29/06 , C30B33/00 , H01L21/3225
摘要： The present invention is to manufacture a low hydrogen-concentration silicon crystal having less micro defects caused from oxygen precipitation generated during an annealing process. Particularly, a silicon crystal including hydrogen concentration lower than 0.55.times.10.sup.11 cm.sup.-3, where the hydrogen concentration dependency is small and the micro defect density is less, may be used for a substrate of semiconductor devices. The low hydrogen-concentration silicon substrate is manufactured by measuring the hydrogen concentrations in a silicon crystal and in a hydrogen-doped silicon crystal having a known hydrogen concentration, where both the silicon crystals have been annealed at an equal condition so as to generated thermal donors therein, and by comparing thus measured hydrogen concentrations. The known hydrogen-doped silicon crystal has been prepared by a hydrogen-diffusing annealing in a hydrogen containing atmosphere, where the hydrogen concentration is calculated from the hydrogen partial pressure and the temperature of the annealing.
摘要翻译：本发明是制造在退火工序中产生的氧沉淀引起的微小缺陷少的低氢浓度硅晶体。特别地，半导体器件的基板可以使用氢浓度低于0.55×10 11 cm -3的硅晶体，其氢浓度依赖性小，微缺陷密度较小。通过测量硅晶体中的氢浓度和具有已知氢浓度的氢掺杂硅晶体制造低氢浓度硅衬底，其中两个硅晶体已经在相等的条件下退火，从而产生热供体并通过比较如此测量的氢浓度。已知的氢掺杂硅晶体已经通过在含氢气氛中的氢扩散退火制备，其中氢浓度由氢分压和退火温度计算。

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