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1. 发明授权

US08531857B2 Power supply device and method for driving the same 有权
标题翻译：电源装置及其驱动方法
公开(公告)号：US08531857B2
公开(公告)日：2013-09-10
申请号：US12677131
申请日：2008-08-28
申请人： Akitaka Soeno , Jun Saito , Gehan Anil Joseph Amaratunga , Florin Udrea
发明人： Akitaka Soeno , Jun Saito , Gehan Anil Joseph Amaratunga , Florin Udrea
IPC分类号： H02M7/5387
CPC分类号： H01L29/7397 , H01L29/0834 , H03K17/08128 , H03K17/0828
摘要： In a reverse conducting semiconductor device, which forms a composition circuit, a positive voltage that is higher than a positive voltage of a collector electrode may be applied to an emitter electrode. In this case, in a region of the reverse conducting semiconductor device in which a return diode is formed, a body contact region functions as an anode, a drift contact region functions as a cathode, and current flows from the anode to the cathode. When a voltage having a lower electric potential than the collector electrode is applied to the trench gate electrode at that time, p-type carriers are generated within the cathode and a quantity of carriers increases within the return diode. As a result, a forward voltage drop of the return diode lowers, and constant loss of electric power can be reduced. Electric power loss can be reduced in a power supply device that uses such a composition circuit in which a switching element and the return diode are connected in reverse parallel.
摘要翻译：在形成合成电路的反向导通半导体器件中，可以将高于集电极的正电压的正电压施加到发射极。在这种情况下，在形成有返回二极管的反向导通半导体器件的区域中，体接触区域用作阳极，漂移接触区域用作阴极，并且电流从阳极流到阴极。此时当沟槽栅电极施加具有比集电极电位低的电压的电压时，在阴极内产生p型载流子，在返回二极管内增加载流子数量。结果，返回二极管的正向压降降低，并且可以减少电力的恒定损失。在使用其中开关元件和返回二极管反向并联连接的组合电路的电源装置中，电力损耗可以减小。

2. 发明申请

US20100283514A1 POWER SUPPLY DEVICE AND METHOD FOR DRIVING THE SAME 有权
标题翻译：电源装置及其驱动方法
公开(公告)号：US20100283514A1
公开(公告)日：2010-11-11
申请号：US12677131
申请日：2008-08-28
申请人： Akitaka Soeno , Jun Saito , Gehan Anil Joseph Amaratunga , Florin Udrea
发明人： Akitaka Soeno , Jun Saito , Gehan Anil Joseph Amaratunga , Florin Udrea
IPC分类号： G05F3/02
CPC分类号： H01L29/7397 , H01L29/0834 , H03K17/08128 , H03K17/0828
摘要： In a reverse conducting semiconductor device, which forms a composition circuit, a positive voltage that is higher than a positive voltage of a collector electrode may be applied to an emitter electrode. In this case, in a region of the reverse conducting semiconductor device in which a return diode is formed, a body contact region functions as an anode, a drift contact region functions as a cathode, and current flows from the anode to the cathode. When a voltage having a lower electric potential than the collector electrode is applied to the trench gate electrode at that time, p-type carriers are generated within the cathode and a quantity of carriers increases within the return diode. As a result, a forward voltage drop of the return diode lowers, and constant loss of electric power can be reduced. Electric power loss can be reduced in a power supply device that uses such a composition circuit in which a switching element and the return diode are connected in reverse parallel.
摘要翻译：在形成合成电路的反向导通半导体器件中，可以将高于集电极的正电压的正电压施加到发射极。在这种情况下，在形成有返回二极管的反向导通半导体器件的区域中，体接触区域用作阳极，漂移接触区域用作阴极，并且电流从阳极流到阴极。此时当沟槽栅电极施加具有比集电极电位低的电压的电压时，在阴极内产生p型载流子，在返回二极管内增加载流子数量。结果，返回二极管的正向压降降低，并且可以减少电力的恒定损失。在使用其中开关元件和返回二极管反向并联连接的组合电路的电源装置中，电力损耗可以减小。

3. 发明授权

US08248116B2 Method of driving reverse conducting semiconductor device, semiconductor device and power supply device 失效
标题翻译：驱动反向导通半导体器件，半导体器件和电源器件的方法
公开(公告)号：US08248116B2
公开(公告)日：2012-08-21
申请号：US12867591
申请日：2009-02-14
申请人： Akitaka Soeno , Jun Saito
发明人： Akitaka Soeno , Jun Saito
IPC分类号： H03K3/00
CPC分类号： H01L29/7397 , H01L29/0834 , H03K17/08128 , H03K17/567 , H03K2217/0036 , H03K2217/0045
摘要： A technique for a reverse conducting semiconductor device including an IGBT element domain and a diode element domain that utilize body regions having a mutual impurity concentration, that makes it possible to adjust an injection efficiency of holes or electrons to the diode element domain, is provided. When a return current flows in the reverse conducting semiconductor device that uses an NPNP-type IGBT, a second voltage that is higher than a voltage of an emitter electrode is applied to second trench gate electrodes of the diode element domain. N-type inversion layers are formed in the periphery of the second trench gate electrodes, and the electrons flow therethrough via a first body contact region and a drift region which are of the same n-type. The injection efficiency of the electrons to the return current is increased, and the injection efficiency of the holes is decreased. Due to this, an increase in a reverse recovery current can be prevented, and a switching loss caused in the diode element domain can be decreased.
摘要翻译：提供一种用于反向导电半导体器件的技术，其包括利用具有相互杂质浓度的体区的IGBT元件区域和二极管元件区域，这使得可以调节空穴或电子到二极管元件区域的注入效率。当返回电流在使用NPNP型IGBT的反向导通半导体器件中流动时，将高于发射极电压的第二电压施加到二极管元件区域的第二沟槽栅电极。 N型反型层形成在第二沟槽栅电极的周围，并且电子通过第一体接触区域和n型相同的漂移区域流过。电子向返回电流的注入效率提高，并且孔的注入效率降低。由此，可以防止反向恢复电流的增加，并且可以降低二极管元件区域中引起的开关损耗。

4. 发明申请

US20110001553A1 METHOD OF DRIVING REVERSE CONDUCTING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND POWER SUPPLY DEVICE 失效
标题翻译：驱动反向导电半导体器件，半导体器件和电源器件的方法
公开(公告)号：US20110001553A1
公开(公告)日：2011-01-06
申请号：US12867591
申请日：2009-02-02
申请人： Akitaka Soeno , Jun Saito
发明人： Akitaka Soeno , Jun Saito
IPC分类号： G05F1/10
CPC分类号： H01L29/7397 , H01L29/0834 , H03K17/08128 , H03K17/567 , H03K2217/0036 , H03K2217/0045
摘要： A technique for a reverse conducting semiconductor device including an IGBT element domain and a diode element domain that utilize body regions having a mutual impurity concentration, that makes it possible to adjust an injection efficiency of holes or electrons to the diode element domain, is provided. When a return current flows in the reverse conducting semiconductor device that uses an NPNP-type IGBT, a second voltage that is higher than a voltage of an emitter electrode is applied to second trench gate electrodes of the diode element domain. N-type inversion layers are formed in the periphery of the second trench gate electrodes, and the electrons flow therethrough via a first body contact region and a drift region which are of the same n-type. The injection efficiency of the electrons to the return current is increased, and the injection efficiency of the holes is decreased. Due to this, an increase in a reverse recovery current can be prevented, and a switching loss caused in the diode element domain can be decreased.
摘要翻译：提供了一种用于反向导电半导体器件的技术，其包括利用具有相互杂质浓度的体区的IGBT元件区域和二极管元件区域，这使得可以调节空穴或电子到二极管元件区域的注入效率。当返回电流在使用NPNP型IGBT的反向导通半导体器件中流动时，将高于发射极电压的第二电压施加到二极管元件区域的第二沟槽栅电极。 N型反型层形成在第二沟槽栅电极的周围，并且电子通过第一体接触区域和n型相同的漂移区域流过。电子向返回电流的注入效率提高，并且孔的注入效率降低。由此，可以防止反向恢复电流的增加，并且可以降低二极管元件区域中引起的开关损耗。

5. 发明授权

US09640651B2 Semiconductor device and method of manufacturing semiconductor device 有权
公开(公告)号：US09640651B2
公开(公告)日：2017-05-02
申请号：US15116288
申请日：2014-10-06
申请人： Hidefumi Takaya , Jun Saito , Akitaka Soeno , Kimimori Hamada , Shoji Mizuno , Sachiko Aoi , Yukihiko Watanabe
发明人： Hidefumi Takaya , Jun Saito , Akitaka Soeno , Kimimori Hamada , Shoji Mizuno , Sachiko Aoi , Yukihiko Watanabe
IPC分类号： H01L29/94 , H01L29/78 , H01L29/06 , H01L29/66 , H01L21/761 , H01L29/16
CPC分类号： H01L29/7811 , H01L21/761 , H01L29/0615 , H01L29/0619 , H01L29/0623 , H01L29/0649 , H01L29/0661 , H01L29/1095 , H01L29/1608 , H01L29/42368 , H01L29/66068 , H01L29/66348 , H01L29/66734 , H01L29/7397 , H01L29/7813
摘要： A semiconductor device includes a termination trench surrounding a region in which a plurality of gate trenches is provided; a p-type lower end region being in contact with a lower end of the termination trench; a p-type outer circumference region being in contact with the termination trench from an outer circumferential side and exposed on a surface of the semiconductor device; a plurality of guard ring regions of a p-type provided on an outer circumferential side of the p-type outer circumference region and exposed on the surface; and an n-type outer circumference region separating the p-type outer circumference region from the guard ring regions and separating the guard ring regions from each another.

6. 发明申请

US20140231866A1 IGBT AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译： IGBT及其制造方法
公开(公告)号：US20140231866A1
公开(公告)日：2014-08-21
申请号：US14347897
申请日：2011-09-28
申请人： Masaru Senoo , Kyosuke Miyagi , Tsuyoshi Nishiwaki , Jun Saito
发明人： Masaru Senoo , Kyosuke Miyagi , Tsuyoshi Nishiwaki , Jun Saito
IPC分类号： H01L29/739 , H01L29/66
CPC分类号： H01L29/66348 , H01L29/0696 , H01L29/0834 , H01L29/1095 , H01L29/36 , H01L29/6634 , H01L29/7396 , H01L29/7397
摘要： An IGBT has an emitter region, a top body region that is formed below the emitter region, a floating region that is formed below the top body region, a bottom body region that is formed below the floating region, a trench, a gate insulating film that covers an inner face of the trench, and a gate electrode that is arranged inside the trench. When a distribution of a concentration of p-type impurities in the top body region and the floating region, which are located below the emitter region, is viewed along a thickness direction of a semiconductor substrate, the concentration of the p-type impurities decreases as a downward distance increases from an upper end of the top body region that is located below the emitter region, and assumes a local minimum value at a predetermined depth in the floating region.
摘要翻译： IGBT具有发射极区域，形成在发射极区域下方的顶部主体区域，形成在顶部主体区域下方的浮动区域，形成在浮动区域下方的底部区域，沟槽，栅极绝缘膜覆盖沟槽的内表面和布置在沟槽内的栅电极。当沿着半导体衬底的厚度方向观察位于发射极区域下方的顶体区域和浮动区域中的p型杂质浓度的分布时，p型杂质的浓度随着向下的距离从位于发射极区域下方的顶部主体区域的上端增加，并且在浮动区域中在预定深度处呈现局部最小值。

7. 发明授权

US08794606B2 Liquid sealed vibration isolating device 有权
标题翻译：液体密封隔振装置
公开(公告)号：US08794606B2
公开(公告)日：2014-08-05
申请号：US12673689
申请日：2008-08-26
申请人： Nobuo Kubo , Hiroshi Yanagase , Jun Saito , Masatomo Nishizaka
发明人： Nobuo Kubo , Hiroshi Yanagase , Jun Saito , Masatomo Nishizaka
IPC分类号： F16F5/00
CPC分类号： F16F13/106
摘要： A liquid sealed vibration isolating device has an elastically movable diaphragm capable of preventing elastic deformation of a relief valve to realize high damping while preventing a cavitation phenomenon. The relief valve is provided in the elastic movable diaphragm arranged in a partition member in order to open and close a leak passage so as to prevent occurrence of the cavitation phenomenon. The relief valve is integrally formed with a fixing portion of the elastic movable diaphragm. There is provided an upwardly open concavity that the relief valve faces. The relief valve is made thicker and provided with an opening and closing adjustment groove at a basal portion of its inclined wall. The opening and closing adjustment groove is formed with a locally thin bending portion functioning as a starting point of bending in an opening and closing operation of the relief valve.
摘要翻译：液体密封隔振装置具有能够防止安全阀的弹性变形以防止气蚀现象而实现高阻尼的弹性移动隔膜。安全阀设置在布置在分隔构件中的弹性可动隔膜中，以便打开和关闭泄漏通道，以防止发生气蚀现象。安全阀与弹性活动隔膜的固定部分整体形成。提供了安全阀面对的向上开口的凹陷。安全阀制成较厚，并在其倾斜壁的基部设置有开闭调节槽。开关调节槽形成有局部薄的弯曲部，其作为安全阀的打开和关闭操作中的弯曲起点。

8. 发明授权

US08711126B2 Optical input device 失效
标题翻译：光输入设备
公开(公告)号：US08711126B2
公开(公告)日：2014-04-29
申请号：US13422958
申请日：2012-03-16
申请人： Jun Saito
发明人： Jun Saito
IPC分类号： G06F3/042
CPC分类号： G06F3/0423 , G06F3/0233 , G06F2203/04105
摘要： A specific information input region (B) individually specifying information to be input and an input mode switching region (C) used for changing an information input mode are placed on an information input region (A) set on a substrate. Each of these regions is displayed to be visible. An optical sensor detects a touched position on the information input region. Then, the touch operation in the input mode switching region (C) is detected according to the output of the optical sensor to selectively switch the information input mode among keyboard input, pen tablet input and mouse input. The output of the optical sensor is analyzed according to the set input mode to find out the information input by the touch operation.
摘要翻译：分别指定要输入的信息的特定信息输入区域（B）和用于改变信息输入模式的输入模式切换区域（C）被放置在设置在基板上的信息输入区域（A）上。这些区域中的每一个都显示为可见。光学传感器检测信息输入区域上的触摸位置。然后，根据光传感器的输出来检测输入模式切换区域（C）中的触摸操作，以便有选择地在键盘输入，笔图形输入和鼠标输入之间切换信息输入模式。根据设定的输入模式对光学传感器的输出进行分析，以找出触摸操作输入的信息。

9. 发明授权

US08523176B2 Movement roller, and belt driving device and image forming device using same 有权
标题翻译：移动辊，皮带驱动装置和使用其的成像装置
公开(公告)号：US08523176B2
公开(公告)日：2013-09-03
申请号：US13084602
申请日：2011-04-12
申请人： Jun Saito
发明人： Jun Saito
IPC分类号： B65H43/04 , G03G15/00
CPC分类号： B65H5/021 , B65G39/07 , B65H2404/252 , B65H2801/06
摘要： A protrusion (13a) and a protrusion (13b) are formed a predetermined distance apart in the direction of a shaft in the outer circumferential surface of the roller main body (11). The cross sections of the protrusion (13a) and the protrusion (13b) are shaped such that a center portion of the roller main body (11) in the direction of the shaft is a boundary (14), and that on the left side of the boundary (14), a vertex (131a) is displaced to the left side from the perpendicular bisector (133a) of an opposite side (132a) whereas on the right side of the boundary (14), a vertex (131b) is displaced to the right side from the perpendicular bisector (133b) of an opposite side (132b). In this way, in a metallic movement roller that moves a strung endless belt, the winding movement and the like of the belt can be prevented, and the belt can be intentionally moved in a specific direction.
摘要翻译：突起（13a）和突起（13b）在辊主体（11）的外周面中沿着轴的方向间隔开预定距离。突起（13a）和突起（13b）的横截面形状使得辊主体（11）在轴的方向上的中心部分是边界（14），并且在左边界（14）中，顶点（131a）从相对侧（132a）的垂直平分线（133a）向左侧移位，而在边界（14）的右侧，顶点（131b）位移到相对侧（132b）的垂直平分线（133b）的右侧。以这种方式，在移动带状环状带的金属制移动辊中，能够防止带的卷绕动作等，能够有意地沿特定的方向移动带。

10. 发明申请

US20120299229A1 LIQUID SEALED VIBRATION ISOLATING DEVICE 有权
标题翻译：液体密封隔离装置
公开(公告)号：US20120299229A1
公开(公告)日：2012-11-29
申请号：US13578647
申请日：2011-02-23
申请人： Nobuo Kubo , Taiyo Gon , Jun Saito , Shunji Nagakura , Yasuharu Akai
发明人： Nobuo Kubo , Taiyo Gon , Jun Saito , Shunji Nagakura , Yasuharu Akai
IPC分类号： F16F13/10
CPC分类号： F16F13/106
摘要： A partition member is provided with an elastic body for absorbing hydraulic pressure fluctuation of the primary liquid chamber and a frame member for supporting an outer circumferential portion of the elastic body while aiming to prevent the rotation of the elastic body. A relief aperture communicating between the primary liquid chamber and the secondary liquid chamber is located on the outer circumferential side in the elastic body supporting region of the frame member. A relief valve for opening and closing the relief aperture is integrally formed on the outer circumferential side of the elastic body. The relief valve is formed of a pair of right and left relief valves. A width across flat sections are formed on a thick-walled outer circumferential section of the elastic body which is located between the right and left relief valves, such as to serve as a detent means.
摘要翻译：分隔构件设置有用于吸收主液室的液压波动的弹性体和用于支撑弹性体的外周部的框架构件，同时防止弹性体的旋转。在主液室和辅液室之间连通的减压孔位于框架构件的弹性体支撑区域的外周侧。在弹性体的外周侧一体地形成有用于打开和关闭释放孔的安全阀。安全阀由一对左右安全阀构成。平面部分的宽度形成在位于左右安全阀之间的弹性体的厚壁外周部分上，以用作制动装置。

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