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1. 发明授权

US6096130A Method of crystal growth of a GaN layer over a GaAs substrate 失效
标题翻译： GaAs衬底上的GaN层的晶体生长方法
公开(公告)号：US6096130A
公开(公告)日：2000-08-01
申请号：US824017
申请日：1997-03-21
申请人： Akitaka Kimura , Haruo Sunakawa , Masaaki Nido
发明人： Akitaka Kimura , Haruo Sunakawa , Masaaki Nido
IPC分类号： C30B29/38 , C30B25/02 , H01L21/205 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/00 , H01S5/323 , C30B25/14
CPC分类号： C30B25/02 , C30B29/406 , H01L21/02395 , H01L21/02433 , H01L21/02458 , H01L21/02463 , H01L21/0254 , H01L21/02614 , H01L21/0262 , H01L21/02661
摘要： A method of crystal growth of a GaN layer with an extremely high surface planarity over a GaAs substrate is provided, wherein a GaAs substrate is heated to a temperature in the range of 600.degree. C. to 700.degree. C. without supplying any group-V element including arsenic to form a Ga-rich surface on the GaAs substrate, before a first source material including N and a second source material including Ga are supplied along with a carrier gas onto a surface of the GaAs substrate to form a GaN layer over the GaAs substrate.
摘要翻译：提供了一种在GaAs衬底上具有极高表面平面度的GaN层的晶体生长方法，其中将GaAs衬底加热至600℃至700℃的温度，而不提供任何V族在包括N的第一源材料和包含Ga的第二源材料在内的GaAs衬底上形成富镓表面的元素与载气一起被供应到GaAs衬底的表面上以在GaAs衬底的表面上形成GaN层 GaAs衬底。

2. 发明授权

US5843227A Crystal growth method for gallium nitride films 失效
标题翻译：氮化镓薄膜的晶体生长方法
公开(公告)号：US5843227A
公开(公告)日：1998-12-01
申请号：US782075
申请日：1997-01-13
申请人： Akitaka Kimura , Haruo Sunakawa , Masaaki Nido , Atsushi Yamaguchi
发明人： Akitaka Kimura , Haruo Sunakawa , Masaaki Nido , Atsushi Yamaguchi
IPC分类号： C30B29/38 , C30B25/02 , C30B25/18 , H01L21/205 , H01L33/16 , H01L33/32 , H01S5/00 , H01S5/323
CPC分类号： C30B25/02 , C30B25/18 , C30B29/406
摘要： A crystal growth method for growing on a gallium arsenide (GaAs) substrate a gallium nitride (GaN) film which is good in surface flatness and superior in crystallinity. According to the method, a GaAs substrate having a surface which is inclined with respect to the GaAs(100) face is used. The inclination angle of the substrate surface is larger than 0 degree but smaller than 35 degrees with respect to the GaAs(100) face. The inclination direction of the substrate surface is within a range of an angular range from the �0,0,1! direction of GaAs to the �0,-1,0! direction past the �0,-1,1! direction and angles less than 5 degrees on opposite sides of the angular range around an �1,0,0! direction of gallium arsenide taken as an axis, or within another range crystallographically equivalent to the range. The GaN layer is formed on the surface of the GaAs substrate preferably by hydride vapor deposition method.
摘要翻译：一种晶体生长方法，用于在砷化镓（GaAs）衬底上生长表面平坦度好并且结晶度优异的氮化镓（GaN）膜。根据该方法，使用具有相对于GaAs（100）面倾斜的表面的GaAs衬底。衬底表面的倾斜角度相对于GaAs（100）面大于0度但小于35度。衬底表面的倾斜方向在从GaAs的[0,0,1]方向到[0，-1,1]方向的[0，-1,0]方向的角度范围的范围内，以及在作为轴的砷化镓的[1,0.0]方向的角度范围的相对侧的角度小于5度，或在与该范围相似的等距范围内的角度。优选通过氢化物气相沉积法在GaAs衬底的表面上形成GaN层。

3. 发明授权

US5825053A Heterostructure III-V nitride semiconductor device including InP substrate 失效
标题翻译：异质结构III-V族氮化物半导体器件包括InP衬底
公开(公告)号：US5825053A
公开(公告)日：1998-10-20
申请号：US799828
申请日：1997-02-13
申请人： Akitaka Kimura , Haruo Sunakawa , Masaaki Nido , Atsushi Yamaguchi
发明人： Akitaka Kimura , Haruo Sunakawa , Masaaki Nido , Atsushi Yamaguchi
IPC分类号： C30B29/38 , H01L21/205 , H01L33/16 , H01L33/20 , H01L33/32 , H01S5/00 , H01L33/00
CPC分类号： H01L33/0075
摘要： In a heterostructure III-V nitride semiconductor device, an InP substrate has a surface having a sloped angle of 0.degree. to 16.degree. with respect to a (100) surface thereof. At least one GaN layer is formed on the InP substrate.
摘要翻译：在异质结构III-V族氮化物半导体器件中，InP衬底具有相对于其（100）表面具有0°至16°的倾斜角的表面。在InP衬底上形成至少一个GaN层。

4. 发明授权

US5559820A Multiple quantum well semiconductor laser 失效
标题翻译：多量子阱半导体激光器
公开(公告)号：US5559820A
公开(公告)日：1996-09-24
申请号：US499661
申请日：1995-07-07
申请人： Akitaka Kimura , Masaaki Nido , Akihisa Tomita , Akira Suzuki
发明人： Akitaka Kimura , Masaaki Nido , Akihisa Tomita , Akira Suzuki
IPC分类号： H01S5/00 , H01S5/042 , H01S5/183 , H01S5/22 , H01S5/227 , H01S5/32 , H01S5/34 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/2275 , H01S5/0424 , H01S5/2205 , H01S5/3211 , H01S5/3415 , H01S5/3428
摘要： A stripe structure including an MQW active layer has a width equal to or smaller than twice the diffusion length of holes, and a p type semiconductor layer for injecting holes into the MQW active layer is formed on both sides of the stripe structure in contact with the sides of the stripe structure. Even when any MQW structure is used as the MQW active layer in order to reduce the temperature dependency of the threshold current, holes are injected into QW layers from the p type semiconductor layer which is in direct contact with all the QW layers in the MQW active layer, so that no local presence of holes in some QW layers occurs. Since the width of the stripe structure is equal to or smaller than twice the diffusion length of holes, the holes are uniformly injected in the direction parallel to the QW surface. That is, it is possible to improve the MQW active layer, while avoiding the local presence of holes, to reduce the temperature dependency of the threshold current which is accompanied with the local presence of holes in the conventional structure. This structure can reduce the temperature dependency of the threshold current of a semiconductor laser.
摘要翻译：包括MQW有源层的条纹结构的宽度等于或小于孔的扩散长度的两倍，并且用于将空穴注入MQW有源层的ap型半导体层形成在条形结构的与侧面接触的两侧的条纹结构。即使使用任何MQW结构作为MQW有源层，为了降低阈值电流的温度依赖性，也可以将空穴从与MQW有源的所有QW层直接接触的p型半导体层注入QW层层，使得在一些QW层中不存在空穴的局部存在。由于条形结构的宽度等于或小于孔的扩散长度的两倍，所以孔在平行于QW表面的方向上被均匀地注入。也就是说，可以改善MQW有源层，同时避免空穴的局部存在，以降低伴随常规结构中局部存在孔的阈值电流的温度依赖性。该结构可以降低半导体激光器的阈值电流的温度依赖性。

5. 发明授权

US06420198B1 Gallium nitride based compound semiconductor laser and method of forming the same 有权
标题翻译：氮化镓基化合物半导体激光器及其形成方法
公开(公告)号：US06420198B1
公开(公告)日：2002-07-16
申请号：US09718432
申请日：2000-11-24
申请人： Akitaka Kimura , Masaaki Nido
发明人： Akitaka Kimura , Masaaki Nido
IPC分类号： H01L2100
CPC分类号： H01S5/2232 , H01L33/007 , H01L33/145 , H01S5/2206 , H01S5/2231 , H01S5/2237 , H01S5/32341
摘要： A semiconductor device and method of forming a current block layer structure includes the steps of providing dielectric stripe masks defining at least a stripe-shaped opening on a surface of a compound semiconductor region having a hexagonal crystal structure, and selectively growing at least a current block layer of a compound semiconductor having the hexagonal crystal structure on the surface of the compound semiconductor region by use of the dielectric stripe masks.
摘要翻译：形成电流阻挡层结构的半导体器件和方法包括以下步骤：在具有六方晶体结构的化合物半导体区域的表面上提供限定至少条形开口的电介质条掩膜，并且至少选择性地生长至少一个当前块通过使用电介质条纹掩模在化合物半导体区域的表面上具有六方晶系结构的化合物半导体层。

6. 发明授权

US5425042A Refractive index control optical semiconductor device 失效
$Refractive index control optical semiconductor device$
标题翻译：折射率控制光半导体器件
公开(公告)号：US5425042A
公开(公告)日：1995-06-13
申请号：US259436
申请日：1994-06-14
申请人： Masaaki Nido , Akitaka Kimura
发明人： Masaaki Nido , Akitaka Kimura
IPC分类号： G02F1/025 , G02F1/017 , H01S5/00 , H01S5/062 , H01S3/106 , H01S3/18
CPC分类号： B82Y20/00 , G02F1/01708 , H01S5/06206
摘要： A refractive index control optical semiconductor device includes a semiconductor p-n junction structure, and a refractive index control semiconductor layer. The semiconductor p-n junction structure outputs light with a forward current. The refractive index control semiconductor layer is formed on a semiconductor substrate, is stacked on the semiconductor p-n junction structure to constitute an optical waveguide, causes a refractive index change of light to occur by carrier injection, and includes a multi-quantum well structure formed by alternately stacking a semiconductor quantum well layer and a barrier layer having a bandgap larger than that of the semiconductor quantum well layer at a plurality of periods. The semiconductor quantum well layer has a lattice constant smaller than that of the semiconductor substrate. The thickness of the semiconductor quantum well layer is set such that a lowest heavy hole sub-band and a lowest light hole sub-band of the semiconductor quantum well layer have nearly the same energy at a .GAMMA.-point in a wave number space.
摘要翻译：折射率控制光半导体器件包括半导体p-n结结构和折射率控制半导体层。半导体p-n结结构以正向电流输出光。折射率控制半导体层形成在半导体衬底上，堆叠在半导体pn结结构上以构成光波导，通过载流子注入引起光的折射率变化，并且包括由多个量子阱结构形成的多量子阱结构在多个周期交替堆叠半导体量子阱层和具有比半导体量子阱层的带隙大的带隙的势垒层。半导体量子阱层的晶格常数小于半导体衬底的晶格常数。半导体量子阱层的厚度被设定为使得半导体量子阱层的最低重孔子带和最低的光孔子带在波数空间中的GAMMA点处具有几乎相同的能量。

7. 发明授权

US06201823B1 Gallium nitride based compound semiconductor laser and method of forming the same 失效
标题翻译：氮化镓基化合物半导体激光器及其形成方法
公开(公告)号：US06201823B1
公开(公告)日：2001-03-13
申请号：US08998430
申请日：1997-12-24
申请人： Akitaka Kimura , Masaaki Nido
发明人： Akitaka Kimura , Masaaki Nido
IPC分类号： H01L3300
CPC分类号： H01S5/2232 , H01L33/007 , H01L33/145 , H01S5/2206 , H01S5/2231 , H01S5/2237 , H01S5/32341
摘要： A semiconductor device and method of forming a current block layer structure includes the steps of providing dielectric stripe masks defining at least a stripe-shaped opening on a surface of a compound semiconductor region having a hexagonal crystal structure, and selectively growing at least a current block layer of a compound semiconductor having the hexagonal crystal structure on the surface of the compound semiconductor region by use of the dielectric stripe masks.
摘要翻译：形成电流阻挡层结构的半导体器件和方法包括以下步骤：在具有六方晶体结构的化合物半导体区域的表面上提供限定至少条形开口的电介质条掩膜，并且至少选择性地生长至少一个当前块通过使用电介质条纹掩模在化合物半导体区域的表面上具有六方晶系结构的化合物半导体层。

8. 发明授权

US07741654B2 Group III nitride semiconductor optical device 有权
标题翻译： III族氮化物半导体光学器件
公开(公告)号：US07741654B2
公开(公告)日：2010-06-22
申请号：US11575387
申请日：2005-09-15
申请人： Kazuhisa Fukuda , Chiaki Sasaoka , Akitaka Kimura
发明人： Kazuhisa Fukuda , Chiaki Sasaoka , Akitaka Kimura
IPC分类号： H01L29/12 , H01L31/00 , H01L33/00
CPC分类号： H01S5/32341 , H01S5/223
摘要： The present invention provides a semiconductor laser excellent in the current injection efficiency. In an inner stripe type semiconductor laser according to the present invention, a p type cladding layer 309 has a superlattice structure composed of GaN layers and Al0.1Ga0.9N layers, which are alternately layered on each other. The p type cladding layer 309 has a portion of high dislocation density and a portion of low dislocation density. That is, the dislocation density is relatively low in a region directly above an opening of the current-confining region 308, whereas the dislocation density is relatively high in a region directly above a current-confining region 308.
摘要翻译：本发明提供一种电流注入效率优异的半导体激光器。在根据本发明的内条型半导体激光器中，p型包层309具有彼此交替层叠的由GaN层和Al 0.1 Ga 0.9 N层构成的超晶格结构。 p型覆层309具有高位错密度的一部分和低位错密度的一部分。也就是说，在电流限制区域308的开口正上方的区域中的位错密度相对较低，而位于电流限制区域308正上方的位置的位错密度相对较高。

9. 发明授权

US07655485B2 Semiconductor layer formed by selective deposition and method for depositing semiconductor layer 有权
标题翻译：通过选择性沉积形成的半导体层和用于沉积半导体层的方法
公开(公告)号：US07655485B2
公开(公告)日：2010-02-02
申请号：US11937921
申请日：2007-11-09
申请人： Akitaka Kimura
发明人： Akitaka Kimura
IPC分类号： H01L21/20
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L33/145 , H01S5/227 , H01S5/2272 , H01S5/32341 , Y10T428/24273
摘要： In a method for fabricating a nitride-based semiconductor laser which forms, by a selective deposition, a current narrowing structure and a structure confining a light in a horizontal direction in parallel to a substrate, when the nitride-based semiconductor is selectively deposited by a metal organic chemical vapor deposition, silicon generated by decomposition of the silicon oxide film used as the mask for the selective deposition is prevented from being deposited on a re-growth boundary. For this purpose, a silicon nitride film is used as the mask for the selective deposition, and when the nitride-based semiconductor is selectively deposited by the metal organic chemical vapor deposition, a V-group material of the nitride-based semiconductor, namely, a nitrogen material, for example, ammonia, is supplied so that the decomposition of the silicon nitride film used as the mask for the selective deposition, is prevented.
摘要翻译：在通过选择性沉积形成电流窄化结构和限制水平方向的光与衬底平行的结构的氮化物基半导体激光器的制造方法中，当氮化物基半导体通过金属有机化学气相沉积，防止用作选择性沉积掩模的氧化硅膜分解产生的硅沉积在再生长边界上。为此，使用氮化硅膜作为用于选择性沉积的掩模，并且当通过金属有机化学气相沉积选择性地沉积氮化物基半导体时，氮化物基半导体的V族材料，即，提供氮材料，例如氨，以防止用作选择性沉积掩模的氮化硅膜的分解。

10. 发明授权

US06887726B2 Semiconductor layer formed by selective deposition and method for depositing semiconductor layer 有权
标题翻译：通过选择性沉积形成的半导体层和用于沉积半导体层的方法
公开(公告)号：US06887726B2
公开(公告)日：2005-05-03
申请号：US09161981
申请日：1998-09-29
申请人： Akitaka Kimura
发明人： Akitaka Kimura
IPC分类号： H01L21/20 , H01L21/205 , H01L29/22 , H01L33/00 , H01L33/06 , H01L33/14 , H01L33/32 , H01S5/00 , H01S5/323 , H01S5/343 , H01L21/00
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L33/145 , H01S5/227 , H01S5/2272 , H01S5/32341 , Y10T428/24273
摘要： In a method for fabricating a nitride-based semiconductor laser which forms, by a selective deposition, a current narrowing structure and a structure confining a light in a horizontal direction in parallel to a substrate, when the nitride-based semiconductor is selectively deposited by a metal organic chemical vapor deposition, silicon generated by decomposition of the silicon oxide film used as the mask for the selective deposition is prevented from being deposited on a re-growth boundary. For this purpose, a silicon nitride film is used as the mask for the selective deposition, and when the nitride-based semiconductor is selectively deposited by the metal organic chemical vapor deposition, a V-group material of the nitride-based semiconductor, namely, a nitrogen material, for example, ammonia, is supplied so that the decomposition of the silicon nitride film used as the mask for the selective deposition, is prevented.
摘要翻译：在通过选择性沉积形成电流窄化结构和限制水平方向的光与衬底平行的结构的氮化物基半导体激光器的制造方法中，当氮化物基半导体通过金属有机化学气相沉积，防止用作选择性沉积掩模的氧化硅膜分解产生的硅沉积在再生长边界上。为此，使用氮化硅膜作为用于选择性沉积的掩模，并且当通过金属有机化学气相沉积选择性地沉积氮化物基半导体时，氮化物基半导体的V族材料，即，提供氮材料，例如氨，以防止用作选择性沉积掩模的氮化硅膜的分解。

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