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1. 发明申请

US20110272817A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：用于制造半导体器件的半导体器件和方法
公开(公告)号：US20110272817A1
公开(公告)日：2011-11-10
申请号：US13188124
申请日：2011-07-21
申请人： Akira TOJO , Tomoyuki KITANI , Kazuhito HIGUCHI , Masako FUKUMITSU , Tomohiro IGUCHI , Hideo NISHIUCHI , Kyoko KATO
发明人： Akira TOJO , Tomoyuki KITANI , Kazuhito HIGUCHI , Masako FUKUMITSU , Tomohiro IGUCHI , Hideo NISHIUCHI , Kyoko KATO
IPC分类号： H01L23/48
CPC分类号： H01L24/97 , H01L21/561 , H01L21/568 , H01L23/3107 , H01L23/544 , H01L24/03 , H01L24/48 , H01L2223/54433 , H01L2223/54486 , H01L2224/04042 , H01L2224/274 , H01L2224/48091 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2924/19041 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： According to an aspect of the present invention, there is provided a semiconductor device, including a semiconductor chip including a first electrode and a second electrode of a semiconductor element, the first electrode and the second electrode being configured on a first surface and a second surface of the semiconductor chip, an encapsulating material encapsulating the semiconductor chip, the surface portion being other than regions, each of the regions connecting with the first second electrodes, each of inner electrodes being connected with the first or the second electrodes, a thickness of the inner electrode from the first surface or the second surface being the same thickness as the encapsulating material from the first surface or the second surface, respectively, outer electrodes, each of the outer electrodes being formed on the encapsulating material and connected with the inner electrode, a width of the outer electrode being at least wider than a width of the semiconductor chip, and outer plating materials, each of the outer plating materials covering five surfaces of the outer electrode other than one surface of the outer electrode being connected with the inner electrode.
摘要翻译：根据本发明的一个方面，提供一种半导体器件，包括半导体芯片，该半导体芯片包括第一电极和半导体元件的第二电极，第一电极和第二电极被配置在第一表面和第二表面上半导体芯片的封装材料，封装半导体芯片的封装材料，表面部分不同于区域，每个区域与第一第二电极连接，每个内部电极与第一或第二电极连接，厚度为来自第一表面或第二表面的内部电极分别与来自第一表面或第二表面的密封材料的厚度相同，外部电极，每个外部电极形成在封装材料上并与内部电极连接，外部电极的宽度至少比半导体ch的宽度宽 ip和外部电镀材料，覆盖外部电极的除了外部电极的一个表面之外的五个表面的每个外部电镀材料与内部电极连接。

2. 发明申请

US20110186982A1 SURFACE MOUNT DIODE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：表面安装二极管及其制造方法
公开(公告)号：US20110186982A1
公开(公告)日：2011-08-04
申请号：US13016239
申请日：2011-01-28
申请人： Tomoyuki KITANI , Akira TOJO , Takao NOGI , Kazuhito HIGUCHI , Tomohiro IGUCHI , Masako FUKUMITSU , Susumu OBATA , Yusaku ASANO
发明人： Tomoyuki KITANI , Akira TOJO , Takao NOGI , Kazuhito HIGUCHI , Tomohiro IGUCHI , Masako FUKUMITSU , Susumu OBATA , Yusaku ASANO
IPC分类号： H01L23/48 , H01L21/782
CPC分类号： H01L21/782 , H01L23/48 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a surface mount diode including a diode chip including a first main surface and a second main surface, a cathode electrode including a first internal electrode portion on the first main surface and a first external electrode portion on the first internal electrode portion, an anode electrode including a second internal electrode portion on the second main surface and a second external electrode portion on the second internal electrode portion, a thickness of the second external electrode portion being the same as a thickness of the first external electrode portion, a first covering member covering a periphery surface of one of the internal electrode portions and a periphery surface of the diode chip, and a second covering member covering a periphery surface of the other of the internal electrode portions, the second covering member being different in color from the first covering member.
摘要翻译：根据一个实施例，一种表面贴装二极管，其包括具有第一主表面和第二主表面的二极管芯片，在第一主表面上包括第一内部电极部分的第一内部电极部分和第一内部电极部分上的第一外部电极部分包括第二主表面上的第二内部电极部分和第二内部电极部分上的第二外部电极部分的阳极电极，第二外部电极部分的厚度与第一外部电极部分的厚度相同，覆盖所述内部电极部分中的一个的周边表面和所述二极管芯片的外围表面的第一覆盖部件和覆盖所述另一个所述内部电极部分的周边表面的第二覆盖部件，所述第二覆盖部件的颜色不同于第一个覆盖成员。

3. 发明申请

US20090072395A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090072395A1
公开(公告)日：2009-03-19
申请号：US12208718
申请日：2008-09-11
申请人： Tomohiro IGUCHI , Hideo NISHIUCHI , Kazuhito HIGUCHI , Tomoyuki KITANI
发明人： Tomohiro IGUCHI , Hideo NISHIUCHI , Kazuhito HIGUCHI , Tomoyuki KITANI
IPC分类号： H01L23/498 , H01L21/60
CPC分类号： H01L24/85 , H01L23/4952 , H01L23/49582 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/81 , H01L2224/0401 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/13099 , H01L2224/16 , H01L2224/16225 , H01L2224/291 , H01L2224/29339 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/4554 , H01L2224/456 , H01L2224/45647 , H01L2224/48091 , H01L2224/48225 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/48724 , H01L2224/48744 , H01L2224/48747 , H01L2224/73265 , H01L2224/81192 , H01L2224/81801 , H01L2224/85203 , H01L2224/85205 , H01L2224/85909 , H01L2224/8592 , H01L2224/92 , H01L2224/92247 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/181 , H01L2924/19043 , H01L2224/85 , H01L2224/78 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device includes a semiconductor element, a lead, and a gold wire electrically connecting an electrode of the semiconductor element and the lead. In the semiconductor device, the gold wire is covered with a metal and is a continuous film formed by plating.
摘要翻译：半导体器件包括半导体元件，引线和电连接半导体元件的电极和引线的金线。在半导体器件中，金线被金属覆盖，并且是通过电镀形成的连续膜。

4. 发明申请

US20100140640A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100140640A1
公开(公告)日：2010-06-10
申请号：US12556134
申请日：2009-09-09
申请人： Kazuo SHIMOKAWA , Takashi KOYANAGAWA , Takeshi MIYAGI , Akihiko HAPPOYA , Kazuhito HIGUCHI , Tomoyuki KITANI
发明人： Kazuo SHIMOKAWA , Takashi KOYANAGAWA , Takeshi MIYAGI , Akihiko HAPPOYA , Kazuhito HIGUCHI , Tomoyuki KITANI
IPC分类号： H01L33/00
CPC分类号： H01L33/507 , H01L33/0079 , H01L33/38 , H01L33/44 , H01L33/505 , H01L33/56 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： Provided is an optical semiconductor device includes: a light-emitting layer having a first main surface, a second main surface opposed to the first main surface, a first electrode and a second electrode which are formed on the second main surface; a fluorescent layer provided on the first main surface; a light-transmissive layer provided on the fluorescent layer and made of a light-transmissive inorganic material; a first metal post provided on the first electrode; a second metal post provided on the second electrode; a sealing layer provided on the second main surface so as to seal in the first and second metal posts with one ends of the respective first and second metal posts exposed; a first metal layer provided on the exposed end of the first metal post; and a second metal layer provided on the exposed end of the second metal post.
摘要翻译：本发明提供一种光半导体装置，具备：具有第一主面，与第一主面相对的第二主面的发光层，形成在第二主面上的第一电极和第二电极; 设置在所述第一主表面上的荧光层; 设置在荧光层上并由透光性无机材料制成的透光层; 设置在所述第一电极上的第一金属柱; 设置在所述第二电极上的第二金属柱; 密封层，设置在所述第二主表面上，以便密封在所述第一和第二金属柱中，所述第一和第二金属柱的一端暴露; 设置在第一金属柱的暴露端上的第一金属层; 以及设置在第二金属柱的暴露端上的第二金属层。

5. 发明申请

US20130082294A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20130082294A1
公开(公告)日：2013-04-04
申请号：US13607480
申请日：2012-09-07
申请人： Toshiya NAKAYAMA , Kazuhito HIGUCHI , Hiroshi KOIZUMI , Hideo NISHIUCHI , Susumu OBATA , Akiya KIMURA , Yoshiaki SUGIZAKI , Akihiro KOJIMA , Yosuke AKIMOTO
发明人： Toshiya NAKAYAMA , Kazuhito HIGUCHI , Hiroshi KOIZUMI , Hideo NISHIUCHI , Susumu OBATA , Akiya KIMURA , Yoshiaki SUGIZAKI , Akihiro KOJIMA , Yosuke AKIMOTO
IPC分类号： H01L33/50
CPC分类号： H01L33/56 , H01L27/15 , H01L33/502 , H01L33/505 , H01L33/508 , H01L33/54 , H01L2933/0041
摘要： According to one embodiment, a light-emitting unit which emits light, a wavelength conversion unit which includes a phosphor and which is provided on a main surface of the light-emitting unit, and a transparent resin which is provided on top of the wavelength conversion unit, are prepared. The transparent resin has a greater modulus of elasticity and/or a higher Shore hardness than the wavelength conversion unit.
摘要翻译：根据一个实施例，发射光的发光单元，包括荧光体并设置在发光单元的主表面上的波长转换单元和设置在波长转换器顶部的透明树脂单位，准备。透明树脂具有比波长转换单元更大的弹性模量和/或更高的肖氏硬度。

6. 发明申请

US20130015483A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20130015483A1
公开(公告)日：2013-01-17
申请号：US13547777
申请日：2012-07-12
申请人： Kazuo SHIMOKAWA , Kazuhito HIGUCHI , Susumu OBATA
发明人： Kazuo SHIMOKAWA , Kazuhito HIGUCHI , Susumu OBATA
IPC分类号： H01L33/60
CPC分类号： H01L33/46 , H01L24/96 , H01L33/54 , H01L2224/04105 , H01L2224/12105 , H01L2224/73265 , H01L2224/73267
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked body, a first electrode, a second electrode, a reflective layer, a first metal pillar, a second metal pillar, and a sealing unit. The stacked body includes first and second semiconductor layers, and a light emitting unit. The light emitting unit is provided between the second portion and the second semiconductor layer. The first electrode is provided on the first semiconductor layer. The second electrode is provided on the second semiconductor layer. The reflective layer covers a side surface of the stacked body and insulative and reflective. The first metal pillar is electrically connected to the first electrode. The second metal pillar is electrically connected to the second electrode. The sealing unit seals the first and second metal pillars to leave end portions of the first and second metal pillars exposed.
摘要翻译：根据一个实施例，半导体发光器件包括层叠体，第一电极，第二电极，反射层，第一金属柱，第二金属柱和密封单元。层叠体包括第一和第二半导体层，以及发光单元。发光单元设置在第二部分和第二半导体层之间。第一电极设置在第一半导体层上。第二电极设置在第二半导体层上。反射层覆盖层叠体的侧面并具有绝缘性和反射性。第一金属柱与第一电极电连接。第二金属柱与第二电极电连接。密封单元密封第一和第二金属柱，以使第一和第二金属柱的端部露出。

7. 发明申请

US20080290512A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080290512A1
公开(公告)日：2008-11-27
申请号：US12125421
申请日：2008-05-22
申请人： Masayuki UCHIDA , Hisashi ITO , Kazuhito HIGUCHI , Takashi TOGASAKI
发明人： Masayuki UCHIDA , Hisashi ITO , Kazuhito HIGUCHI , Takashi TOGASAKI
IPC分类号： H01L23/488 , H01L21/60
CPC分类号： H05K3/3436 , H01L21/563 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/13016 , H01L2224/13023 , H01L2224/13099 , H01L2224/13111 , H01L2224/16013 , H01L2224/81011 , H01L2224/81191 , H01L2224/81211 , H01L2224/81801 , H01L2224/83102 , H01L2224/92125 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01025 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01057 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H05K3/3463 , H05K3/3494 , H05K2201/0379 , H05K2201/09427 , H05K2203/1121 , Y02P70/613 , H01L2224/29099 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： For a suppressed breakage after a flip chip connection of a semiconductor device using a low-permittivity insulation film and a lead-free solder together, with an enhanced production yield, bump electrodes (2) are heated by a temperature profile having, after a heating up to a melting point of the bump electrodes (2) or more, a cooling in which a temperature within a range of 190 to 210° C. is kept for an interval of time within a range of 3 to 15 minutes, and a condition is met, such that 1.4
摘要翻译：为了在使用低介电常数绝缘膜和无铅焊料的半导体器件的倒装芯片连接之后抑制破坏，以提高的生产成本，凸起电极（2）被加热了在加热之后的温度分布直到凸起电极（2）的熔点以上，将在190〜210℃的范围内的温度保持在3〜15分钟的范围内的时间间隔的冷却，以及条件使得1.4

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