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    • 2. 发明授权
    • Entry control system and entry control method
    • 进入控制系统和进入控制方法
    • US08093988B2
    • 2012-01-10
    • US11892678
    • 2007-08-27
    • Kouichi TakeneKimito IdemoriKoichi IkedaYoshiro SekiFuminori KishinoKeiji YamamotoAkira Sawada
    • Kouichi TakeneKimito IdemoriKoichi IkedaYoshiro SekiFuminori KishinoKeiji YamamotoAkira Sawada
    • B60R25/00
    • G07C9/00309G07C9/00111
    • To provide an entry control system as well as an entry control method allowing for an easy entry of user, permitting a restriction to persons who have a legitimate right to enter a facility, an illuminating device (1) emits a modulated visible light signal 13 modulated by use of a door ID code into a preset illumination range, the modulated visible light signal 13 from the illuminating device (1) is received by a mobile terminal (2) portable by the user, where it is demodulated for wireless signal transmission, and the door ID code transmitted from the mobile terminal (2) is received by an authentication device (3), which judges whether or not the door ID code is legitimate, and generates an unlock command when the door ID code is judged to be legitimate, and a door (4) for a facility controlled of entry receives the unlock command from the authentication device (3), whereby it is unlocked.
    • 为了提供入口控制系统以及允许用户容易进入的入口控制方法,允许对具有进入设施的合法权利的人员进行限制,照明设备(1)发射调制的可见光信号13调制 通过使用门ID码进入预设照明范围,来自照明装置(1)的调制可见光信号13由用户可携带的移动终端(2)接收,在那里被解调用于无线信号传输,以及 从移动终端(2)发送的门ID码由认证装置(3)接收,认证装置(3)判断门ID码是否合法,并且当门ID码被判断为合法时,产生解锁指令, 并且用于进入控制的设施的门(4)从认证装置(3)接收解锁命令,由此解锁。
    • 7. 发明授权
    • Semiconductor pressure sensor for sensing fluid pressure
    • 用于检测流体压力的半导体压力传感器
    • US06186009B1
    • 2001-02-13
    • US09110322
    • 1998-07-06
    • Junichi MiyanoAkira SawadaKeiji Sasaki
    • Junichi MiyanoAkira SawadaKeiji Sasaki
    • G01L700
    • G01L19/148G01L9/06G01L19/0084G01L19/147
    • The object of the present invention is to provide a pressure sensor comprising a pressure sensing element of a plurality of resistors on a semiconductor board, wherein said pressure sensing element is fixed inside the housing firmly and airtightly. A pressure sensor 10 comprising a housing 11 made of metal material, and a pressure sensing element mounted on a semiconductor board 13 positioned in the interior of said housing for sensing pressure, wherein said housing 11 comprises a liquid induction hole 11d, an inner area connecting to said liquid induction hole and having an opening in an upper portion, and an annular protrusion 11g formed in the peripheral of an opening of said liquid induction hole at a bottom portion of said inner area, characterized in that said pressure sensing element 13 is welded airtightly to said protrusion 11g of said housing 11 through a seat 21 comprising an opening 21a at the center thereof formed of a pressure sensing element mounting member 21-1 and a stem connecting member 20d, and a stem 20 having an opening 20d at the center thereof.
    • 本发明的目的是提供一种压力传感器,其包括半导体板上的多个电阻器的压力感测元件,其中所述压力感测元件牢固且气密地固定在壳体内。 包括由金属材料制成的壳体11的压力传感器10和安装在位于所述壳体内部以检测压力的半​​导体板13上的压力感测元件,其中所述壳体11包括液体感应孔11d, 到所述液体感应孔并且在上部具有开口,以及在所述内部区域的底部处形成在所述液体感应孔的开口的周边中的环形突起11g,其特征在于,所述压力感测元件13被焊接 通过座21,气密地连接到所述壳体11的所述凸起11g,所述座21包括在其中心处由压力感测元件安装构件21-1和杆连接构件20d形成的开口21a以及在中心具有开口20d的杆20 其中。
    • 8. 发明授权
    • Image inquiry circuit capable of comparing reference image and retrieval object image
    • 图像查询电路能够比较参考图像和检索对象图像
    • US06175665B1
    • 2001-01-16
    • US09092633
    • 1998-06-05
    • Akira Sawada
    • Akira Sawada
    • G06K960
    • G06F15/8023G06T7/223G06T2207/10016
    • An image inquiry apparatus includes a plurality of unit inquiry circuits arranged in a matrix of m rows and r stages (each of m and r is an integer more than 1). The plurality of unit inquiry circuits other than the unit inquiry circuits of i-th row and (i+1)-th stage (1≦i≦ a smaller one of m and r, and i is an integer) are connected in series in units of rows. Inputs of the unit inquiry circuits of i-th rows and (i+1)-th stages are respectively connected to inputs of the unit inquiry circuits of i-th rows and i-th stages. Each of the plurality of unit inquiry circuits includes a plurality of pixel processing circuits connected in series, and outputs a calculation data corresponding to a difference between a reference pixel and a retrieval pixel which are both held therein. R summing circuits are respectively provided for the r stages of the matrix. Each of the n summing circuits sums the calculation data supplied from the pixel processing circuits in the corresponding stage to output the summing result.
    • 图像查询装置包括以m行和r级(m和r为大于1的整数)的矩阵排列的多个单元查询电路。 除第i行和第(i + 1)级的单位查询电路之外的多个单元查询电路(1≤i≤= m和r中较小的一个,i为整数)连接在 系列以行为单位。 第i行和第(i + 1)级的单元查询电路的输入分别连接到第i行和第i级的单元查询电路的输入。 多个单元查询电路中的每一个包括串联连接的多个像素处理电路,并且输出与保持在其中的参考像素和检索像素之间的差相对应的计算数据。 分别为矩阵的r级提供R个求和电路。 n个求和电路中的每一个将从相应级中的像素处理电路提供的计算数据相加,以输出求和结果。
    • 10. 发明授权
    • Method of (111) group II-VI epitaxial layer grown on (111) silicon
substrate
    • (111)(111)硅衬底上生长的II-VI族外延层的(111)方法
    • US5394826A
    • 1995-03-07
    • US139743
    • 1993-10-22
    • Hiroji EbeAkira Sawada
    • Hiroji EbeAkira Sawada
    • H01L21/20C30B25/02H01L21/205H01L21/36H01L21/365H01L31/0264
    • H01L21/02562C30B25/02C30B29/48H01L21/02381H01L21/02395H01L21/02433H01L21/02609H01L21/0262Y10S438/973
    • A group II-VI epitaxial layer grown on a (111) silicon substrate has a lattice mismatch which is minimized, as between the group II-VI epitaxial layer and the silicon substrate. The grown group II-VI epitaxial layer also has a (111) plane at the interface with the substrate, and a 30.degree. in-plane rotation slip is formed at the interface between the (111) silicon substrate and the group II-VI epitaxial layer. The above structure is produced by a metal organic chemical vapor deposition method (MOCVD), in which a mol ratio of a group VI gas source supply to a group II gas source supply is kept greater than 15 during the growth. The (111) silicon substrate is preferably mis-oriented toward the direction of the silicon substrate. When a HgCdTe layer is grown on the epitaxial layer, the product thus formed has utility as a monolithic infrared detector in which a plurality of detector elements are formed in the HgCdTe layer and a signal processing circuit is formed in the silicon substrate.
    • 在(111)硅衬底上生长的II-VI族外延层具有如II-VI族外延层和硅衬底之间的最小化的晶格失配。 生长的组II-VI外延层在与衬底的界面处还具有(111)面,并且在(111)硅衬底和II-VI族外延层之间的界面处形成30°的面内旋转滑移 层。 上述结构是通过金属有机化学气相沉积法(MOCVD)制备的,其中VI族气源源与II族气体源的摩尔比在生长过程中保持大于15。 (111)硅衬底优选地朝向硅衬底的<1>向上&lt; 10&gt;方向错误取向。 当在外延层上生长HgCdTe层时,由此形成的产品可用作单片红外检测器,其中在HgCdTe层中形成多个检测器元件,并且在硅衬底中形成信号处理电路。