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1. 发明授权

US4618873A Thin film device 失效
标题翻译：薄膜装置
公开(公告)号：US4618873A
公开(公告)日：1986-10-21
申请号：US621683
申请日：1984-06-18
申请人： Akira Sasano , Kouichi Seki , Hideaki Yamamoto , Toru Baji , Toshihisa Tsukada
发明人： Akira Sasano , Kouichi Seki , Hideaki Yamamoto , Toru Baji , Toshihisa Tsukada
IPC分类号： H01L21/02 , H01L21/822 , H01L21/84 , H01L27/04 , H01L27/146 , H01L29/45 , H01L31/02 , H01L29/78
CPC分类号： H01L28/20 , H01L21/84 , H01L27/14643 , H01L29/458
摘要： In a thin film device having a hydrogenated amorphous silicon film, a metal layer is formed on the hydrogenated amorphous silicon film and then the metal layer is removed. A resulting reaction layer formed on the hydrogenated amorphous silicon film is used as a resistor.
摘要翻译：在具有氢化非晶硅膜的薄膜器件中，在氢化非晶硅膜上形成金属层，然后除去金属层。形成在氢化非晶硅膜上的反应层用作电阻。

2. 发明授权

US4565928A Photo electro transducer device 失效
标题翻译：光电传感器装置
公开(公告)号：US4565928A
公开(公告)日：1986-01-21
申请号：US421403
申请日：1982-09-22
申请人： Hideaki Yamamoto , Toru Baji , Toshihisa Tsukada , Akira Sasano
发明人： Hideaki Yamamoto , Toru Baji , Toshihisa Tsukada , Akira Sasano
IPC分类号： H04N1/028 , H01L27/14 , H01L27/146 , H04N1/40 , H01J40/14
CPC分类号： H01L27/14643 , H04N1/40056 , H04N3/15
摘要： A photosensor comprises a first conductive layer formed on a given substrate, a one-dimensional array of a plurality of unit picture elements formed on the first conductive layer to extend in the longitudinal direction thereof, each unit picture element having a photodiode and a blocking diode connected in series with the photodiode in a relationship of reversed rectifying direction therewith, a second conductive layer for connecting together, at one end, respective unit picture elements belonging to each of at least two unit picture element groups having each at least two of adjacent unit picture elements, and a third conductive layer for connecting together, at the other end, corresponding unit picture elements in the respective groups, the set of the photodiode and blocking diode in the respective groups being made of the same semiconductor material. Dispersion of outputs from the respective unit picture elements can be minimized.
摘要翻译：光电传感器包括形成在给定衬底上的第一导电层，形成在第一导电层上的多个单位像素的一维阵列，以沿其纵向方向延伸，每个单位像素具有光电二极管和阻塞二极管与反射整流方向的光电二极管串联连接的第二导电层，用于将属于至少两个单元像素组中的至少两个单元像素组中的每一个的相应单元图像元素连接在一起的第二导电层，图像元素和用于将另一端连接在一起的第三导电层，各组中的相应单元像素，各组中的光电二极管和阻塞二极管的组由相同的半导体材料制成。可以将来自相应单元图像的输出的色散最小化。

3. 发明授权

US4500915A Color solid-state imager 失效
标题翻译：彩色固态成像仪
公开(公告)号：US4500915A
公开(公告)日：1985-02-19
申请号：US423446
申请日：1982-09-24
申请人： Norio Koike , Toshihisa Tsukada , Toru Baji , Akira Sasano
发明人： Norio Koike , Toshihisa Tsukada , Toru Baji , Akira Sasano
IPC分类号： H01L29/762 , H01L21/339 , H01L27/148 , H04N9/07
CPC分类号： H01L27/14843 , H01L27/14868 , H04N3/1575
摘要： The present invention consists in providing a CCD type color solid-state imager in which color signals respectively separated in time can be derived from picture elements for respective colors arrayed in the shape of a matrix and which permits interlacing without degrading a resolution and without causing image lag. Concretely, pairs of CCD shift registers which are electrically insulated and separated and which run in the vertical direction are arrayed in the horizontal direction, signal charges stored in adjacent picture elements are sent into the individual opposing CCD registers through transfer gates arrayed in a checkerboard pattern, and signal charges transferred in time sequence are distributed to a plurality of CCD shift registers which run in the horizontal direction, whereby a CCD type color solid-state imager having a high resolution and exhibiting no image lag is obtained.
摘要翻译：本发明的目的在于提供一种CCD型彩色固态成像器，其中分别在时间上分离出的色信号可以从以矩阵形排列的各种颜色的图像元素中导出，并且允许隔行扫描而不降低分辨率并且不引起图像落后。具体地说，电绝缘和分离并沿垂直方向延伸的CCD对移位寄存器沿水平方向排列，存储在相邻像素中的信号电荷通过排列在棋盘图案中的传输门发送到各个相对的CCD寄存器，并且以时间顺序传送的信号电荷被分配到在水平方向上运行的多个CCD移位寄存器，由此获得具有高分辨率且不显示图像滞后的CCD型彩色固态成像器。

4. 发明授权

US4360821A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4360821A
公开(公告)日：1982-11-23
申请号：US66230
申请日：1979-08-13
申请人： Toshihisa Tsukada , Eiichi Maruyama , Toru Baji , Saburo Ataka , Yoshinori Imamura , Akira Sasano , Masaharu Kubo , Norio Koike , Shusaku Nagahara
发明人： Toshihisa Tsukada , Eiichi Maruyama , Toru Baji , Saburo Ataka , Yoshinori Imamura , Akira Sasano , Masaharu Kubo , Norio Koike , Shusaku Nagahara
IPC分类号： H01L27/146 , H01L27/14
CPC分类号： H01L27/14665
摘要： In a solid-state imaging device having a plurality of photosensitive portions and a semiconductor substrate which includes at least scanning means for scanning the photosensitive portions, the photosensitive portions including a layer of a photosensitive material overlying the semiconductor substrate and a transparent electrically conductive film overlying the photosensitive material layer; a solid-state imaging device characterized in that the photosensitive material is an amorphous material whose indispensable constituent is silicon and which contains hydrogen. The hydrogen content of the photosensitive material is preferably 5 atomic-% to 30 atomic-%, especially 10 atomic-% to 25 atomic-%.
摘要翻译：在具有多个感光部分的固态成像装置和至少包括用于扫描感光部分的扫描装置的半导体衬底上，感光部分包括覆盖在半导体衬底上的感光材料层和覆盖着透明导电膜的透明导电膜感光材料层; 一种固态成像装置，其特征在于感光材料是不可缺少的成分是硅并且含有氢的无定形材料。感光材料的氢含量优选为5原子％至30原子％，特别是10原子％至25原子％。

5. 发明授权

US5889573A Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and liquid crystal display equipment 失效
标题翻译：薄膜晶体管基板，其制造方法，液晶显示面板和液晶显示设备
公开(公告)号：US5889573A
公开(公告)日：1999-03-30
申请号：US928719
申请日：1997-09-12
申请人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
发明人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
IPC分类号： G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , G09G3/36 , H01L21/3205 , H01L21/336 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , H01L29/04
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/136213 , H01L29/4908 , H01L2924/0002
摘要： The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof.In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus-lines.The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).
摘要翻译：本发明涉及使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用TFT基板的液晶显示面板和使用该液晶显示面板的液晶显示设备，更具体地，涉及能够改善其特性的结构和制造方法。在本发明中，Cr或Ta用于栅极端子，铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）和阳极氧化膜由金属构成并且没有缺陷用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一个。在更优选的结构中，阳极氧化膜用于所有栅极绝缘体，用于薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜。本发明还涉及在铝图案上选择性地形成阳极氧化膜的方法。也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。

6. 发明授权

US5359206A Thin film transistor substrate, liquid crystal display panel and liquid crystal display equipment 失效
标题翻译：薄膜晶体管基板，液晶显示面板和液晶显示设备
公开(公告)号：US5359206A
公开(公告)日：1994-10-25
申请号：US674328
申请日：1991-04-15
申请人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
发明人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
IPC分类号： G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , G09G3/36 , H01L21/3205 , H01L21/336 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , H01L29/04 , H01L23/48 , H01L27/01 , H01L31/036
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/136213 , H01L29/4908 , H01L2924/0002
摘要： Disclosed is an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. In the TFT substrate, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extending therefrom, for gate electrodes, and for electrodes of thin film capacitors (additional capacitance, storage capacitance), and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulating films for the intersections between the bus-lines. Also disclosed is a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).
摘要翻译： PCT No.PCT / JP90 / 01039 Sec。 371日期：1991年4月15日 102（e）日期1991年4月15日PCT提交1990年8月13日PCT公布。 WO91 / 02999 PCT出版物 1991年3月7日公开。公开是使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用TFT基板的液晶显示面板和使用液体的液晶显示设备水晶显示面板。在TFT基板中，使用Cr或Ta作为栅极端子，铝或主要由铝构成的金属用于从栅极电极延伸的栅极总线，以及用于薄膜电容器的电极（附加电容，存储电容）并且由金属构成并且没有缺陷的阳极氧化膜用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一种。还公开了在铝图案上选择性地形成阳极氧化膜的方法。也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。

7. 发明授权

US4430185A Method of producing photoelectric transducers 失效
标题翻译：光电传感器的制造方法
公开(公告)号：US4430185A
公开(公告)日：1984-02-07
申请号：US245749
申请日：1981-03-20
申请人： Yasuharu Shimomoto , Toshihisa Tsukada , Akira Sasano , Yasuo Tanaka , Hideaki Yamamoto , Yukio Takasaki
发明人： Yasuharu Shimomoto , Toshihisa Tsukada , Akira Sasano , Yasuo Tanaka , Hideaki Yamamoto , Yukio Takasaki
IPC分类号： C23C14/00 , C23C16/509 , H01L27/146 , H01L31/20 , H04N5/335 , H04N5/357 , H04N5/369 , H04N5/372 , H04N5/374 , C23C15/00
CPC分类号： C23C14/0036 , C23C16/5096 , H01L27/14665 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： In the method of producing photoelectric transducers having processes for forming a photoconductive layer on a predetermined substrate with an irregular surface by a method of depositing the photoconductive layer in the atmosphere including at least plasma, the predetermined substrate with irregular surface is disposed above a first electrode to which an electrode is opposed, and said photoconductive layer is formed while a negative potential is being applied to the first electrode. This enables the photoconductive layer to be formed without breaks at steps, pinholes and so on due to the irregular surface, and therefore, it is possible to provide good photoelectric transducers with small dark current.
摘要翻译：在具有通过在包括至少等离子体的气氛中沉积光电导层的方法的具有不规则表面的预定基板上形成光电导层的工艺的方法中，具有不规则表面的预定基板设置在第一电极电极相对，并且所述光导电层形成，同时向第一电极施加负电位。这使得光电导层由于不规则的表面而在步骤，针孔等形成而不会发生断裂，因此，可以提供具有小暗电流的良好光电传感器。

8. 发明授权

US5672523A Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and liquid crystal display equipment 失效
标题翻译：薄膜晶体管基板，其制造方法，液晶显示面板和液晶显示设备
公开(公告)号：US5672523A
公开(公告)日：1997-09-30
申请号：US451209
申请日：1995-05-26
申请人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
发明人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
IPC分类号： G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , G09G3/36 , H01L21/3205 , H01L21/336 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , H01L21/84
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/136213 , H01L29/4908 , H01L2924/0002
摘要： The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. Cr or Ta is used for gate terminals; aluminum or a metal composed mainly of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance); and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, for the anodic oxidation, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .beta..gtoreq.110-20T(T: film thickness of the positive type photoresist). The photoresist is subjected to a heat treatment prior to and after exposure, preferably the after-treatment being performed before developing. The anodic oxidation film is heat-treated after formation, to reduce the leak current.
摘要翻译：本发明涉及使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用该TFT基板的液晶显示面板和使用该液晶显示面板的液晶显示装置。 Cr或Ta用于栅极端子; 铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）; 并且由金属构成并且没有缺陷的阳极氧化膜用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一种。在用正型光致抗蚀剂形成选择性氧化掩模到铝图案上的所需区域时，为了阳极氧化，在选择性氧化掩模和铝图案之间形成的角度（θ）被制成： 20T（T：正型光致抗蚀剂的膜厚）。在曝光之前和之后对光致抗蚀剂进行热处理，优选在显影之前进行后处理。阳极氧化膜在形成后进行热处理，以减少漏电流。

9. 发明授权

US5719408A Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and liquid crystal display equipment 失效
标题翻译：薄膜晶体管基板，其制造方法，液晶显示面板和液晶显示设备
公开(公告)号：US5719408A
公开(公告)日：1998-02-17
申请号：US803011
申请日：1997-02-21
申请人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
发明人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
IPC分类号： G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , G09G3/36 , H01L21/3205 , H01L21/336 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , H01L29/04 , H01L27/108 , H01L31/036
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/136213 , H01L29/4908 , H01L2924/0002
摘要： In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus lines. The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).
摘要翻译：在本发明中，Cr或Ta用于栅极端子，铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）和阳极氧化膜由金属构成并且没有缺陷用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一个。在更优选的结构中，阳极氧化膜用于所有栅极绝缘体，用于薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜。本发明还涉及在铝图案上选择性地形成阳极氧化膜的方法。也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。

10. 发明授权

US4855795A Photosensor 失效
标题翻译：光电传感器
公开(公告)号：US4855795A
公开(公告)日：1989-08-08
申请号：US898540
申请日：1986-08-21
申请人： Hideaki Yamamoto , Akira Sasano , Haruo Matsumaru , Yasuo Tanaka , Toshihisa Tsukada
发明人： Hideaki Yamamoto , Akira Sasano , Haruo Matsumaru , Yasuo Tanaka , Toshihisa Tsukada
IPC分类号： H01L27/14 , H01L27/146 , H01L31/0216 , H01L31/0224 , H01L31/09 , H01L31/20 , H04N1/028
CPC分类号： H01L27/14665 , H01L31/0216 , H01L31/022466 , H01L31/095 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A photosensor comprises an insulating substrate, an electrode, a photoconductor layer composed of a hydrogenated amorphous silicon semiconductor layer obtained by the glow discharge decomposition of monosilane gas, a junction stabilizing layer composed of a boron-containing hydrogenated amorphous silicon semiconductor which is obtained by the glow discharge decomposition of a mixed gas of monosilane and diborane, a transparent electrode and a transparent protective layer, these elements being laminated in that order. The insertion of the junction stabilizing layer between the photoconductor layer and the transparent electrode greatly improves the dark current characteristic. The electrode, the photoconductor layer and the junction stabilizing layer can be divided in correspondence with each picture element, thereby improving the resolution of the photosensor.
摘要翻译：光传感器包括绝缘基板，电极，由通过单硅烷气体的辉光放电分解获得的氢化非晶硅半导体层构成的感光体层，由含硼氢化非晶硅半导体构成的结稳定层，其由甲硅烷和乙硼烷的混合气体的辉光放电分解，透明电极和透明保护层，这些元素按顺序层压。在光电导体层和透明电极之间插入结稳定层极大地改善了暗电流特性。电极，光电导体层和结稳定层可以与每个像素对应地划分，从而提高光传感器的分辨率。

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