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    • 1. 发明授权
    • Membrane for use in X-ray mask and method for preparing the same
    • 用于X射线掩模的膜及其制备方法
    • US4940851A
    • 1990-07-10
    • US111996
    • 1987-10-21
    • Akira OyobeToshihiko MaedaHiroyuki NakaeToshio HiraiTsuyoshi Masumoto
    • Akira OyobeToshihiko MaedaHiroyuki NakaeToshio HiraiTsuyoshi Masumoto
    • C01B35/14G03F1/00G03F1/22H01L21/027
    • G03F1/22
    • A membrane for use in an X-ray mask composed of a compound comprising at least three kinds of elements of boron (B), silicon (Si) and nitrogen (N) in which the content of silicon in the compound is at least 15 atomic percent, but less than 100 atomic percent, and the atomic ratio of Si/(B+Si) in the compound is at least 0.2, but less than one. The membrane is synthesized from source gases including at least the foregoing three kinds of elements by chemical reaction under such conditions that the ratio of nitrogen to boron plus silicon is at least one in the source gases and thereby depositing a film of the compound onto a substrate. Since the membrane thus prepared has a high transmittance in the visible region and X-ray and their residual stress can be readily controlled by adjusting the conditions for the formation of the membrane, it is suitable for the preparation of X-ray masks.
    • 一种用于由包含硼(B),硅(Si)和氮(N))的至少三种元素的化合物构成的X射线掩模的膜,其中化合物中的硅含量为至少15原子 百分比但小于100原子%,化合物中Si /(B + Si)的原子比为至少0.2,但小于1。 在源气体中氮与硼与硅的比例至少为1的条件下,通过化学反应在至少包含上述3种元素的源气体中合成膜,由此将化合物的膜沉积在基材上 。 由于如此制备的膜在可见光区域具有高透射率,并且通过调节形成膜的条件可以容易地控制X射线及其残余应力,因此适用于制备X射线掩模。