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1. 发明授权

US06834613B1 Plasma-resistant member and plasma treatment apparatus using the same 有权
标题翻译：使用该等离子体的构件和等离子体处理装置
公开(公告)号：US06834613B1
公开(公告)日：2004-12-28
申请号：US09719010
申请日：2000-12-07
申请人： Akira Miyazaki , Keiji Morita , Sachiyuki Nagasaka , Shuji Moriya
发明人： Akira Miyazaki , Keiji Morita , Sachiyuki Nagasaka , Shuji Moriya
IPC分类号： H01L2100
CPC分类号： H01L21/67069 , C04B35/111 , H01J37/32477 , H01J37/32559 , H01J37/32642
摘要： A plasma-resistant member used in a reaction chamber of a plasma treating apparatus is formed of a dense alumina sintered product having an average grain size of 18-45 &mgr;m, a surface roughness Ra of 0.8-3.0 &mgr;m and a bulk density of 3.90 g/cm3 or over.
摘要翻译：在等离子体处理装置的反应室中使用的耐等离子体构件由平均粒径为18〜45μm，表面粗糙度Ra为0.8〜3.0μm，堆积密度为3.90g的致密氧化铝烧结体形成 / cm 3以上。

2. 发明授权

US07476634B2 Yttria sintered body and manufacturing method therefor 失效
标题翻译：氧化钇烧结体及其制造方法
公开(公告)号：US07476634B2
公开(公告)日：2009-01-13
申请号：US11504102
申请日：2006-08-15
申请人： Sachiyuki Nagasaka , Keiji Morita , Keisuke Watanabe
发明人： Sachiyuki Nagasaka , Keiji Morita , Keisuke Watanabe
IPC分类号： C04B35/505
CPC分类号： C04B35/505 , B22F2998/00 , B22F2998/10 , C04B2235/404 , C04B2235/5436 , C04B2235/5445 , C04B2235/604 , C04B2235/6581 , C04B2235/6582 , C04B2235/77 , C04B2235/96 , C04B2235/9607 , C04B2235/9692 , C22C1/051 , C22C29/005 , C22C29/12 , H01J37/32431 , B22F3/1007 , B22F2201/013 , B22F9/026 , B22F1/0003 , B22F3/04
摘要： To provide a yttria sintered body having an excellent corrosion resistance to halogen-based corrosive gases and plasma and an excellent thermal shock resistance, and adapted for use as a component member in manufacturing apparatuses for semiconductor and liquid crystal devices, particularly in a plasma process apparatus. A yttria sintered body including tungsten of an average particle size of 3 μm or less dispersed in the yttria so that a ratio of the tungsten relative to the yttria is ranging from 1 to 50% in terms of weight, and having an open pore rate of 0.2% or less and a thermal shock resistance by water submersion method of 200° C. or larger.
摘要翻译：为了提供一种对卤素类腐蚀性气体和等离子体具有优异的耐腐蚀性和优异的耐热冲击性的氧化钇烧结体，适合用作半导体和液晶装置的制造装置中的部件，特别是在等离子体处理装置。一种氧化钇烧结体，其包含平均粒度为3μm以下的均匀分布在氧化钇中的钨，使得钨相对于氧化钇的比例为1〜50重量％，开孔率为 0.2％以下，水浸方法的耐热冲击性为200℃以上。

3. 发明申请

US20070079934A1 Gas dispersion plate and manufacturing method therefor 审中-公开
标题翻译：气体分散板及其制造方法
公开(公告)号：US20070079934A1
公开(公告)日：2007-04-12
申请号：US11512431
申请日：2006-08-30
申请人： Yukitaka Murata , Sachiyuki Nagasaka , Keiji Morita , Keisuke Watanabe , Shigenori Wakabayashi
发明人： Yukitaka Murata , Sachiyuki Nagasaka , Keiji Morita , Keisuke Watanabe , Shigenori Wakabayashi
IPC分类号： H01L21/306 , C23F1/00 , C23C16/00
CPC分类号： C23C16/45565 , C04B41/009 , C04B41/53 , C04B41/91 , C04B35/505
摘要： To provide an inexpensive gas dispersion plate having a high corrosion resistance to halogen-based corrosive gasses and a plasma thereof, and capable of preventing particle generation from the gas hole, thereby contributing to an improvement in the production yield of the semiconductor devices. The gas dispersion plate includes one or plural gas holes in a base material formed by a Y2O3 ceramic material having a relative density of 96% or more, in which an edge part of the gas hole is formed by a sand blasting process into a rounded shape with a radius of curvature of 0.2 mm or more.
摘要翻译：为了提供对卤素类腐蚀性气体和其等离子体具有高耐蚀性的廉价的气体分散板，并且能够防止从气孔产生颗粒，从而有助于提高半导体器件的产量。气体分散板包括由相对密度为96％以上的Y 2 O 3 O 3陶瓷材料形成的基材中的一个或多个气孔，其中气孔的边缘部分通过喷砂处理形成为具有0.2mm或更大的曲率半径的圆形。

4. 发明申请

US20070066478A1 Yttria sintered body and manufacturing method therefor 失效
标题翻译：氧化钇烧结体及其制造方法
公开(公告)号：US20070066478A1
公开(公告)日：2007-03-22
申请号：US11504102
申请日：2006-08-15
申请人： Sachiyuki Nagasaka , Keiji Morita , Keisuke Watanabe
发明人： Sachiyuki Nagasaka , Keiji Morita , Keisuke Watanabe
IPC分类号： C04B35/505
CPC分类号： C04B35/505 , B22F2998/00 , B22F2998/10 , C04B2235/404 , C04B2235/5436 , C04B2235/5445 , C04B2235/604 , C04B2235/6581 , C04B2235/6582 , C04B2235/77 , C04B2235/96 , C04B2235/9607 , C04B2235/9692 , C22C1/051 , C22C29/005 , C22C29/12 , H01J37/32431 , B22F3/1007 , B22F2201/013 , B22F9/026 , B22F1/0003 , B22F3/04
摘要： To provide a yttria sintered body having an excellent corrosion resistance to halogen-based corrosive gases and plasma and an excellent thermal shock resistance, and adapted for use as a component member in manufacturing apparatuses for semiconductor and liquid crystal devices, particularly in a plasma process apparatus. A yttria sintered body including tungsten of an average particle size of 3 μm or less dispersed in the yttria so that a ratio of the tungsten relative to the yttria is ranging from 1 to 50% in terms of weight, and having an open pore rate of 0.2% or less and a thermal shock resistance by water submersion method of 200° C. or larger.
摘要翻译：为了提供一种对卤素类腐蚀性气体和等离子体具有优异的耐腐蚀性和优异的耐热冲击性的氧化钇烧结体，适合用作半导体和液晶装置的制造装置中的部件，特别是在等离子体处理装置。一种氧化钇烧结体，其包含平均粒度为3μm以下的均匀分布在氧化钇中的钨，使得钨相对于氧化钇的比例为1〜50重量％，开孔率为 0.2％以下，水浸方法的耐热冲击性为200℃以上。

5. 发明申请

US20060073354A1 Gas diffusion plate and manufacturing method for the same 审中-公开
标题翻译：气体扩散板及其制造方法相同
公开(公告)号：US20060073354A1
公开(公告)日：2006-04-06
申请号：US11239678
申请日：2005-09-30
申请人： Keisuke Watanabe , Keiji Morita , Sachiyuki Nagasaka
发明人： Keisuke Watanabe , Keiji Morita , Sachiyuki Nagasaka
IPC分类号： C25D1/08 , B32B15/00 , B32B15/01
CPC分类号： H01J37/3244 , C22C21/00 , C23C4/11 , C25D1/08 , H01J37/32495 , Y10T428/12361 , Y10T428/12493 , Y10T428/12736
摘要： A gas diffusion plate has an alumina or an aluminum base material provided with one or more through holes and an yttria body shrink-fitted to one of the through holes and provided with one or more gas discharge holes.
摘要翻译：气体扩散板具有设置有一个或多个通孔的氧化铝或铝基材料，并且将氧化钇体收缩配合到一个通孔并且设置有一个或多个排气孔。

6. 发明申请

US20050227118A1 Plasma resistant member 审中-公开
标题翻译：等离子体元件
公开(公告)号：US20050227118A1
公开(公告)日：2005-10-13
申请号：US11149358
申请日：2005-06-10
申请人： Tomonori Uchimaru , Haruo Murayama , Takashi Tanaka , Keiji Morita , Akira Miyazaki
发明人： Tomonori Uchimaru , Haruo Murayama , Takashi Tanaka , Keiji Morita , Akira Miyazaki
IPC分类号： H05H1/46 , B32B18/00 , C04B35/44 , C04B35/50 , C04B35/505 , C04B41/52 , C04B41/89 , C23C14/00 , C23C16/44 , H01J37/32 , H01L21/205 , H01L21/302 , B32B9/00
CPC分类号： C04B41/009 , B32B18/00 , C04B35/44 , C04B35/50 , C04B35/505 , C04B35/63416 , C04B41/52 , C04B41/89 , C04B2111/00405 , C04B2235/656 , C04B2235/6567 , C04B2237/34 , C04B2237/343 , C04B2237/365 , C04B2237/366 , C04B2237/704 , C23C16/4404 , H01J37/32477 , H01J37/32559 , C04B41/4539 , C04B41/5031 , C04B41/5045 , C04B41/5032 , C04B41/522 , C04B35/10
摘要： The present invention provides a plasma resistant member having a reinforced mechanical strength and being sufficiently durable to exposure to a low pressure high density plasma. At least the surface of the alumina based material is formed of an oxide or composite oxide layer of a group IIIA element via an intermediate layer. It is preferable in the construction of the plasma resistant member that the intermediate layer comprises 10 to 80% by weight of the oxide or composite oxide of the group IIIA element in the periodic table and 90 to 20% by weight of alumina. The intermediate layer may also comprise a course ceramic with a porosity of 0.2 to 5%. It is also desirable that at least one of the conditions such as a difference in the thermal shrinkage ratio at 1600 to 1900° C. of 3% or less is provided.
摘要翻译：本发明提供了具有增强的机械强度并且足够耐用以暴露于低压高密度等离子体的耐等离子体部件。氧化铝基材料的至少表面经由中间层由IIIA族元素的氧化物或复合氧化物层形成。在等离子体抗蚀构件的构造中，优选中间层包含10至80重量％的周期表中的IIIA族元素的氧化物或复合氧化物和90至20重量％的氧化铝。中间层还可以包含孔隙率为0.2-5％的过程陶瓷。还希望提供诸如1600至1900℃之间的热收缩率差异等于或等于3％的条件中的至少一个。

7. 发明申请

US20090242087A1 EXTRUDED MEMBER OF ALUMINUM ALLOY EXCELLING IN FLEXURAL CRUSHING PERFORMANCE AND CORROSION RESISTANCE AND METHOD FOR PRODUCTION THEREOF 审中-公开
标题翻译：弹性破碎性能和耐腐蚀性的铝合金挤压成型及其生产方法
公开(公告)号：US20090242087A1
公开(公告)日：2009-10-01
申请号：US12396710
申请日：2009-03-03
申请人： Keiji Morita , Shinji Yoshihara , Manabu Nakai , Shigenobu Yasunaga
发明人： Keiji Morita , Shinji Yoshihara , Manabu Nakai , Shigenobu Yasunaga
IPC分类号： C22F1/047 , C22C21/16
CPC分类号： C22C21/06 , C22F1/047
摘要： An extruded member of Al—Mg—Si aluminum alloy specially composed of Mg, Si, Fe, Cu, Zn, Ti, etc. which has the equiaxed re-crystallized grain structure in which intergranular precipitates 1 μm or lager are separate from one another at large average intervals and there are many cube orientations over the entire thickness region thereof so that it excels in both flexural crushing performance and corrosion resistance. The extruded member is suitable for use as automotive body reinforcement members which need outstanding lateral crushing performance under severe collision conditions as well as good corrosion resistance.
摘要翻译：特别由Mg，Si，Fe，Cu，Zn，Ti等组成的Al-Mg-Si铝合金的挤压构件，其具有1μm或更大的晶间析出物的等轴再结晶晶粒结构彼此分离平均间隔较大，并且在其整个厚度区域上具有许多立方体取向，因此其在弯曲破碎性能和耐腐蚀性方面均优异。挤出部件适用于在严酷的碰撞条件下需要优异的侧向破碎性能以及良好的耐腐蚀性的汽车车身增强件。

8. 发明授权

US06492042B2 Ceramics material and producing the same 失效
标题翻译：陶瓷材料和生产相同
公开(公告)号：US06492042B2
公开(公告)日：2002-12-10
申请号：US09901070
申请日：2001-07-10
申请人： Keiji Morita , Mitsuhiro Fujita , Haruo Murayama
发明人： Keiji Morita , Mitsuhiro Fujita , Haruo Murayama
IPC分类号： B32B900
CPC分类号： C04B41/009 , C04B41/5032 , C04B41/87 , Y10T428/265 , C04B41/4539 , C04B35/10
摘要： The invention is a method of producing a ceramics material comprising the steps of: preparing a raw powder in which alumina particles having an average particle diameter of 0.1-1.0 &mgr;are doped with at least magnesia of 0.01-1 weight % and a solution containing yttrium of 0.1-15 weight % in yttria; molding said raw powder and calcining a molding thus created; and heating the calcined molding in an atmosphere containing a hydrogen gas to create YAG which is leached to the surface to deposit YAG on the surface and sintering the molding.
摘要翻译：本发明是一种制造陶瓷材料的方法，包括以下步骤：制备原料粉末，其中平均粒径为0.1-1.0μm的氧化铝颗粒掺杂至少0.01-1重量％的氧化镁和含有钇的溶液 0.1-15重量％的氧化钇; 模制所述原料粉末并煅烧由此产生的模制品; 并在含有氢气的气氛中加热煅烧的成型体，以产生YAG，该YAG浸出到表面以将YAG沉积在表面上并烧结成型体。

9. 发明申请

US20080189351A1 NETWORK SYSTEM WHICH PERFORMS PEER-TO-PEER COMMUNICATION 审中-公开
标题翻译：实现对等通信的网络系统
公开(公告)号：US20080189351A1
公开(公告)日：2008-08-07
申请号：US11849554
申请日：2007-09-04
申请人： Shigeyuki Nemoto , Takahiro Fujishiro , Ayumi Kawano , Keiji Morita
发明人： Shigeyuki Nemoto , Takahiro Fujishiro , Ayumi Kawano , Keiji Morita
IPC分类号： G06F15/16
CPC分类号： H04L67/104 , H04L63/0823 , H04L67/1065
摘要： To reduce a load inflicted on a network by peer-to-peer communication between terminals, the present invention provides a network system having a communication destination machine and a communication source machine, in which: the communication destination machine includes a unit which registers its own location information in a peer-to-peer network; and the communication source machine includes: a unit which searches the peer-to-peer network for the location information of the communication destination machine and obtains the location information; and a unit which uses the obtained information to establish peer-to-peer communication. The location information contains communication path information which enables the communication source machine to communicate with a desired machine beyond a path controller, and a parameter necessary for communication. The communication source machine may include a unit which accumulates location information or similar data of multiple communication destination machines.
摘要翻译：为了减少在终端之间通过对等通信在网络上造成的负载，本发明提供了一种具有通信目的地机器和通信源机器的网络系统，其中：通信目的地机器包括一个注册其自身的单元点对点网络中的位置信息; 并且所述通信源机器包括：在所述对等网络中搜索所述通信目的地机器的位置信息并获取所述位置信息的单元; 以及使用所获得的信息来建立对等通信的单元。位置信息包含通信路径信息，其使通信源机器能够与路径控制器之外的所需机器通信，以及通信所需的参数。通信源机器可以包括累积多个通信目的地机器的位置信息或类似数据的单元。

10. 发明授权

US06838405B2 Plasma-resistant member for semiconductor manufacturing apparatus and method for manufacturing the same 有权
标题翻译：用于半导体制造装置的等离子体元件及其制造方法
公开(公告)号：US06838405B2
公开(公告)日：2005-01-04
申请号：US10208871
申请日：2002-08-01
申请人： Mitsuhiro Fujita , Keiji Morita
发明人： Mitsuhiro Fujita , Keiji Morita
IPC分类号： C04B41/80 , C04B35/115 , C04B35/44 , C04B35/50 , C04B41/53 , C04B41/91 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , C04B35/51 , C04B35/03 , C04B35/10
CPC分类号： C04B41/91 , C04B35/115 , C04B35/44 , C04B35/62655 , C04B41/009 , C04B41/53 , C04B2235/3206 , C04B2235/3225 , C04B2235/6582 , C04B2235/72 , C04B2235/786 , C04B2235/963 , H01J37/32165 , H01J37/32559 , C04B41/0072 , C04B41/4519 , C04B35/505
摘要： A plasma-resistant member for a semiconductor manufacturing apparatus, which can reduce the contamination level on a semiconductor wafer. The contents of Fe, Ni, Cr and Cu are made lower than 1.0 ppm respectively within a depth of at least 10 μm from surface in a plasma-resistant member.
摘要翻译：一种用于半导体制造装置的耐等离子体元件，其可以降低半导体晶片上的污染水平。 Fe，Ni，Cr和Cu的含量分别低于等离子体阻抗构件表面至少10μm以下的深度。

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