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    • 6. 发明授权
    • Treatment method of waste oil or waste edible oil
    • 废油或废食用油的处理方法
    • US06478947B2
    • 2002-11-12
    • US09758614
    • 2001-01-12
    • Kohji NagasakuAkira MatsunagaSungrak Jang
    • Kohji NagasakuAkira MatsunagaSungrak Jang
    • C02F1461
    • C11B3/06C02F2001/4619C02F2201/46115C11B13/00Y02W30/74
    • Glycerin is effectively produced from a waste oil by a method comprising adding a strongly alkaline reducing water obtained by electrolyzing water containing sodium chloride to a waste oil selected from the group consisting of a waste edible oil, a fossil fuel waste oil and a mixture thereof, and extracting natural glycerin or synthetic glycerin by chemical reaction. Further, reusable edible oil is produced from a waste edible oil by a method comprising electrolyzing an aqueous solution having an electrolyte in an electrolytic cell, mixing a strongly alkaline reducing water generated at a cathode side of the electrolytic cell with a waste edible oil under ordinary temperature condition, and conducting oil/water separation, thereby purifying the waste edible oil to an extent such that it can be edible.
    • 甘油通过以下方法有效地由废油制备,所述方法包括将选自由食用油,化石燃料废油及其混合物组成的组中的废油进行电解而获得的强碱性还原水, 并通过化学反应萃取天然甘油或合成甘油。 此外,可再利用的食用油通过包括在电解池中电解具有电解质的水溶液的方法从废食用油生产,将在电解槽的阴极侧产生的强碱性还原水与普通的废食用油混合 温度条件,进行油/水分离,从而将废弃食用油净化至可食用的程度。
    • 9. 发明授权
    • Glass-moulded type semiconductor device
    • 玻璃成型型半导体器件
    • US4430664A
    • 1984-02-07
    • US187628
    • 1980-09-16
    • Akira MatsunagaKeiichi Morita
    • Akira MatsunagaKeiichi Morita
    • H01L23/29H01L23/31H01L25/07H01L23/30H01L23/02H01L23/42H01L29/34
    • H01L25/074H01L23/291H01L23/3135H01L23/3171H01L2924/0002
    • A glass-moulded type semiconductor device comprising semiconductor arrangement composed of at least one semiconductor pellet having at least one P-N junction, edges of which are exposed to peripheral surfaces of the semiconductor pellet, a pair of electrodes secured to opposite ends of the semiconductor arrangement through a brazing material, a first mould glass layer secured to the entire circumferential surface of the semiconductor arrangement and extending to the surfaces of the electrodes for passivating the P-N junction of the semiconductor arrangement, and a second mould glass in the form of at least one layer secured to the surface of said first mould glass layer.Thermal expansion coefficient of each of the mould glass layers is selected in such a manner that the thermal expansion coefficient of the first glass layer is larger than the apparent thermal expansion coefficient of a semiconductor assembly consisting of the semiconductor arrangement and the brazing material, and the thermal expansion coefficient of said second mould glass layer is larger than that of the first mould glass layer.
    • 一种玻璃模制型半导体器件,包括由至少一个具有至少一个PN结的半导体芯片组成的半导体器件,半导体芯片的边缘暴露于半导体芯片的周边表面,一对电极固定在半导体器件的相对端,通过 钎焊材料,第一模具玻璃层,其固定到半导体装置的整个圆周表面并延伸到电极的表面以钝化半导体装置的PN结;以及第二模具玻璃,其形式为至少一层 固定在所述第一模具玻璃层的表面上。 选择每个模具玻璃层的热膨胀系数,使得第一玻璃层的热膨胀系数大于由半导体装置和钎焊材料构成的半导体组件的表观热膨胀系数,并且 所述第二模具玻璃层的热膨胀系数大于第一模具玻璃层的热膨胀系数。