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    • 1. 发明授权
    • Parallel differential transmission lines having an opposing grounding conductor separated into two parts by a slot therein
    • 平行的差动传输线具有相对的接地导体,其中的狭槽分成两部分
    • US08040200B2
    • 2011-10-18
    • US12486912
    • 2009-06-18
    • Akira MinegishiToru YamadaKazuhide UriuSusumu Sawada
    • Akira MinegishiToru YamadaKazuhide UriuSusumu Sawada
    • H01P3/08
    • H01P3/026H01P1/02
    • In a differential transmission line, a substrate has first and second surfaces parallel to each other, and a first grounding conductor is formed on the second surface of the substrate. A dielectric layer is formed on the first grounding conductor, and a second grounding conductor is formed on the dielectric layer. First and the second signal conductors are formed to be parallel to each other on the first surface of the substrate. The first signal conductor and the first and second grounding conductors constitute a first transmission line, and the second signal conductor and the first and second grounding conductors constitute a second transmission line. A slot is formed in the first grounding conductor to three-dimensionally intersect with the first and second signal conductors and to be orthogonal to a longitudinal direction thereof, and a connecting conductor is formed for connecting the first grounding conductor with the second grounding conductor.
    • 在差动传输线中,基板具有彼此平行的第一和第二表面,并且在基板的第二表面上形成第一接地导体。 介电层形成在第一接地导体上,第二接地导体形成在电介质层上。 第一和第二信号导体形成为在基板的第一表面上彼此平行。 第一信号导体和第一和第二接地导体构成第一传输线,第二信号导体和第一和第二接地导体构成第二传输线。 在第一接地导体中形成有与第一和第二信号导体三维相交并且与其纵向正交的槽,并且形成用于将第一接地导体与第二接地导体连接的连接导体。
    • 2. 发明申请
    • DIFFERENTIAL TRANSMISSION LINE INCLUDING TWO TRANSMISSION LINES PARALLEL TO EACH OTHER
    • 差异传输线包括两个传输线并行到每个其他
    • US20090315649A1
    • 2009-12-24
    • US12486912
    • 2009-06-18
    • Akira MINEGISHIToru YamadaKazuhide UriuSusumu Sawada
    • Akira MINEGISHIToru YamadaKazuhide UriuSusumu Sawada
    • H01P3/08
    • H01P3/026H01P1/02
    • In a differential transmission line, a substrate has first and second surfaces parallel to each other, and a first grounding conductor is formed on the second surface of the substrate. A dielectric layer is formed on the first grounding conductor, and a second grounding conductor is formed on the dielectric layer. First and the second signal conductors are formed to be parallel to each other on the first surface of the substrate. The first signal conductor and the first and second grounding conductors constitutes a first transmission line, and the second signal conductor and the first and second grounding conductors constitutes a second transmission line. A slot is formed in the first grounding conductor to sterically intersect with the first and second signal conductors and to be orthogonal to a longitudinal direction thereof, and a connecting conductor is formed for connecting the first grounding conductor with the second grounding conductor.
    • 在差动传输线中,基板具有彼此平行的第一和第二表面,并且在基板的第二表面上形成第一接地导体。 介电层形成在第一接地导体上,第二接地导体形成在电介质层上。 第一和第二信号导体形成为在基板的第一表面上彼此平行。 第一信号导体和第一和第二接地导体构成第一传输线,第二信号导体和第一和第二接地导体构成第二传输线。 在第一接地导体中形成有与第一和第二信号导体空间交叉并且与其纵向方向垂直的槽,并且形成用于将第一接地导体与第二接地导体连接的连接导体。
    • 4. 发明申请
    • SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME AND IMAGE DISPLAY
    • 半导体器件,其制造方法和图像显示器
    • US20110204367A1
    • 2011-08-25
    • US12672135
    • 2008-08-06
    • Seiichi NakataniYoshihisa YamashitaTakashi KitaeSusumu Sawada
    • Seiichi NakataniYoshihisa YamashitaTakashi KitaeSusumu Sawada
    • H01L33/02H01L29/786H01L21/336
    • H01L51/057H01L27/3274H01L27/3276H01L51/0096Y02E10/549Y02P70/521
    • A semiconductor device having a semiconductor elements formed with higher density is provided. Furthermore an image display device using the semiconductor device is also provided.A semiconductor device comprising a resin film that has a through hole that penetrates from one surface to the other surface thereof, a source electrode disposed along the inner wall of the through hole, a drain electrode disposed along the inner wall of the through hole, a gate electrode disposed on the other surface of the resin film opposing the through hole, an insulating layer disposed on the gate electrode at the bottom of the through hole and an organic semiconductor disposed in the through hole so as to contact the source electrode and the drain electrode, wherein the organic semiconductor makes contact with at least a part of the insulating layer at the bottom of the through hole so that a channel is formed in the organic semiconductor in the vicinity of the insulating layer that is in contact therewith.
    • 提供了具有以更高密度形成的半导体元件的半导体器件。 此外,还提供了使用该半导体器件的图像显示装置。 一种半导体器件,包括具有从一个表面到另一个表面穿透的通孔的树脂膜,沿着通孔的内壁设置的源电极,沿该通孔的内壁设置的漏电极, 设置在与通孔相对的树脂膜的另一个表面上的栅电极,设置在通孔底部的栅电极上的绝缘层和布置在通孔中的有机半导体,以便与源电极和漏极 电极,其中有机半导体与通孔底部的绝缘层的至少一部分接触,使得在与其接触的绝缘层附近的有机半导体中形成沟道。
    • 8. 发明授权
    • Sputtering targets of high-purity aluminum or alloy thereof
    • 高纯度铝或其合金的溅射靶
    • US5456815A
    • 1995-10-10
    • US364073
    • 1994-12-27
    • Hideaki FukuyoSusumu SawadaMasaru Nagasawa
    • Hideaki FukuyoSusumu SawadaMasaru Nagasawa
    • C23C14/34
    • C23C14/3414
    • A sputtering target of a high-purity Al or Al alloy having (1) a target crystal structure as a recrystallization structure and average grain diameters in various portions of 500 .mu.m or less, with dispersions within .+-.15%, and (2) a {200} crystalline orientation content ratio on the sputtering surface of at least 0.35 in various portions of the target, with dispersions within .+-.15%, said {200} crystalline orientation content ratio being defined by the following formula: ##EQU1## where I.sub.{200}, I.sub.{111}, I.sub.{220} and I.sub.{311} are peak strengths for (200), (111), (220) and (311) crystal planes, respectively, as obtained X-ray diffraction method. Simultaneous realization of (1)+(2) is desirable. For these purposes, uniform warm or cold working to a desired final geometry below the recrystallization temperature must be followed by uniform heat treatment throughout the target at the recrystallization temperature of the material to finish the recrystallization.
    • 一种高纯度Al或Al合金的溅射靶,其具有(1)作为再结晶结构的靶晶体结构,各种部分的平均粒径为500μm以下,分散在±15%以内,(2 )在溅射表面上的{200}晶体取向含量比在靶的各个部分中至少为0.35,分散体在+/- 15%内,所述{200}结晶取向含量比由下式定义:其中I {200},I {111},I {220}和I {311}分别是(200),(111),(220)和(311)晶面的峰值强度,如X射线 衍射法。 同时实现(1)+(2)是可取的。 为了这些目的,在再结晶温度以下的期望最终几何形状的均匀加热或冷加工必须在材料的再结晶温度下在整个靶材上进行均匀的热处理,以完成重结晶。