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1. 发明授权

US5772860A High purity titanium sputtering targets 失效
标题翻译：高纯钛溅射靶
公开(公告)号：US5772860A
公开(公告)日：1998-06-30
申请号：US308234
申请日：1994-09-19
申请人： Susumu Sawada , Hideaki Fukuyo , Masaru Nagasawa
发明人： Susumu Sawada , Hideaki Fukuyo , Masaru Nagasawa
IPC分类号： C23C14/34
CPC分类号： C23C14/3414
摘要： A high-purity titanium sputtering target having controlled crystal characteristics. The uniform problem of film thickness distribution on a substrate can be solved by adopting the requirements that (a) the average crystal grain diameters at various portions of the sputtering surface of the target are 500 .mu.m or less, preferably 100 .mu.m or less, and their dispersions are within .+-.20%, and (b) the defined orientation content ratios A have dispersions within .+-.20% and (c) a Ti target crystal structure has a recrystallization structure. The problems in connection with particle generation and lowered film forming rate in collimation sputtering can be solved by adopting the requirements that (d) said orientation content ratios A are is 80% or less, preferably 50% or less, and (e) the defined orientation content ratios B are 20% or less, as necessary, in combination with the aforementioned (a) to (c) requirements.
摘要翻译：具有受控晶体特性的高纯钛溅射靶。可以通过以下要求来解决基板上的膜厚分布的均匀问题：（a）靶的溅射表面的各部分的平均晶粒直径为500μm以下，优选为100μm以下，并且它们的分散体在+/- 20％内，和（b）定义的取向含量比A具有在+/- 20％内的分散体，（c）Ti靶晶体结构具有重结晶结构。通过采用（d）所述取向含有率A为80％以下，优选为50％以下的要求，可以解决与准直溅射中的粒子产生和降低成膜速度有关的问题，（e）取向含量比B在必要时为20％以下，与上述（a）〜（c）要求相结合。

2. 发明申请

US20070131545A1 Packaging device and packaging method for hollow cathode type sputtering target 有权
标题翻译：空心阴极溅射靶的包装装置及包装方法
公开(公告)号：US20070131545A1
公开(公告)日：2007-06-14
申请号：US10575937
申请日：2004-09-14
申请人： Takeo Okabe , Masaru Nagasawa
发明人： Takeo Okabe , Masaru Nagasawa
IPC分类号： C23C14/00
CPC分类号： H01J37/342 , B65B31/04 , B65D81/2023
摘要： Provided are a packaging device and packaging method of a hollow cathode sputtering target which installs, in the hollow cathode sputtering target, a cover of a size capable of covering a void of the target; provides one or more through-holes to the cover; places a resin bag over them, and performs vacuum suction to the inside of the bag. This packaging device and packaging method of a hollow cathode sputtering target is capable of performing vacuum suction even to the inside of the hollow portion covered with the resin bag.
摘要翻译：提供一种中空阴极溅射靶的包装装置和封装方法，其在中空阴极溅射靶中安装能够覆盖靶的空隙的尺寸的盖; 向盖子提供一个或多个通孔; 在其上放置树脂袋，并对袋子内部进行真空抽吸。这种包装装置和中空阴极溅射靶的包装方法即使在覆盖有树脂袋的中空部分的内部也能够进行真空吸附。

3. 发明授权

US5693203A Sputtering target assembly having solid-phase bonded interface 失效
标题翻译：具有固相键合界面的溅射靶组件
公开(公告)号：US5693203A
公开(公告)日：1997-12-02
申请号：US306057
申请日：1994-09-14
申请人： Tateo Ohhashi , Hideaki Fukuyo , Ichiroh Sawamura , Kenichirou Nakamura , Atsushi Fukushima , Masaru Nagasawa
发明人： Tateo Ohhashi , Hideaki Fukuyo , Ichiroh Sawamura , Kenichirou Nakamura , Atsushi Fukushima , Masaru Nagasawa
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： H01J37/3435 , C23C14/3407 , Y10T428/1275 , Y10T428/12806 , Y10T428/12812 , Y10T428/12819 , Y10T428/12826 , Y10T428/12896 , Y10T428/12903 , Y10T428/12944
摘要： A sputtering target assembly composed of a sputtering target and a backing plate with or without an insert or inserts interposed therebetween as necessary characterized by having solid-phase bonded interface accompanied with no appreciable thermal diffusion layer and by said sputtering target substantially maintaining the quality characteristics including metallurgical characteristics and properties that the sputtering target had before it was bonded to the backing plate intact. The sputtering target assembly is obtained by solid-phase bonding the target and backing plate, with or without one or more insert sandwiched therebetween, at a low temperature and a low pressure under a vacuum. The solid-phase bonded interface gives reliable bonds of a bonded area percentage of 100% without non-bonded portions such as pores. The uniformity of microstructure and crystal orientation etc. of a target material is maintained intact with the suppression of crystal grain growth.
摘要翻译：由溅射靶和背板组成的溅射靶组件，其具有或不具有插入物或插入物之间的插入物或插入物，其特征在于具有伴随无明显热扩散层的固相键合界面和所述溅射靶基本上保持质量特性，包括溅射靶材之前的冶金特性和性能完好无损地粘合到背板上。溅射靶组件是通过在低温和低压下在真空下将目标板和背板固定相结合而得到的，夹持有或不带有一个或多个插入件。固相键合界面可赋予粘合面积百分比为100％的可靠键，而无粘合部分如孔。目标材料的微观结构和晶体取向等的均匀性随着晶粒生长的抑制而保持不变。

4. 发明授权

US5456815A Sputtering targets of high-purity aluminum or alloy thereof 失效
标题翻译：高纯度铝或其合金的溅射靶
公开(公告)号：US5456815A
公开(公告)日：1995-10-10
申请号：US364073
申请日：1994-12-27
申请人： Hideaki Fukuyo , Susumu Sawada , Masaru Nagasawa
发明人： Hideaki Fukuyo , Susumu Sawada , Masaru Nagasawa
IPC分类号： C23C14/34
CPC分类号： C23C14/3414
摘要： A sputtering target of a high-purity Al or Al alloy having (1) a target crystal structure as a recrystallization structure and average grain diameters in various portions of 500 .mu.m or less, with dispersions within .+-.15%, and (2) a {200} crystalline orientation content ratio on the sputtering surface of at least 0.35 in various portions of the target, with dispersions within .+-.15%, said {200} crystalline orientation content ratio being defined by the following formula: ##EQU1## where I.sub.{200}, I.sub.{111}, I.sub.{220} and I.sub.{311} are peak strengths for (200), (111), (220) and (311) crystal planes, respectively, as obtained X-ray diffraction method. Simultaneous realization of (1)+(2) is desirable. For these purposes, uniform warm or cold working to a desired final geometry below the recrystallization temperature must be followed by uniform heat treatment throughout the target at the recrystallization temperature of the material to finish the recrystallization.
摘要翻译：一种高纯度Al或Al合金的溅射靶，其具有（1）作为再结晶结构的靶晶体结构，各种部分的平均粒径为500μm以下，分散在±15％以内，（2 ）在溅射表面上的{200}晶体取向含量比在靶的各个部分中至少为0.35，分散体在+/- 15％内，所述{200}结晶取向含量比由下式定义：其中I {200}，I {111}，I {220}和I {311}分别是（200），（111），（220）和（311）晶面的峰值强度，如X射线衍射法。同时实现（1）+（2）是可取的。为了这些目的，在再结晶温度以下的期望最终几何形状的均匀加热或冷加工必须在材料的再结晶温度下在整个靶材上进行均匀的热处理，以完成重结晶。

5. 发明授权

US07788882B2 Packaging device and packaging method for hollow cathode type sputtering target 有权
标题翻译：空心阴极溅射靶的包装装置及包装方法
公开(公告)号：US07788882B2
公开(公告)日：2010-09-07
申请号：US10575937
申请日：2004-09-14
申请人： Takeo Okabe , Masaru Nagasawa
发明人： Takeo Okabe , Masaru Nagasawa
IPC分类号： B65B31/00 , B67B3/24
CPC分类号： H01J37/342 , B65B31/04 , B65D81/2023
摘要： Provided are a packaging device and packaging method of a hollow cathode sputtering target which installs, in the hollow cathode sputtering target, a cover of a size capable of covering a void of the target; provides one or more through-holes to the cover; places a resin bag over them, and performs vacuum suction to the inside of the bag. This packaging device and packaging method of a hollow cathode sputtering target is capable of performing vacuum suction even to the inside of the hollow portion covered with the resin bag.
摘要翻译：提供一种中空阴极溅射靶的包装装置和封装方法，其在中空阴极溅射靶中安装能够覆盖靶的空隙的尺寸的盖; 向盖子提供一个或多个通孔; 在其上放置树脂袋，并对袋子内部进行真空抽吸。这种包装装置和中空阴极溅射靶的包装方法即使在覆盖有树脂袋的中空部分的内部也能够进行真空吸附。

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