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1. 发明授权

US4734436A Benzoylphenylurea derivative and its use as an insecticide 失效
标题翻译：苯甲酰基苯基脲衍生物及其作为杀虫剂的用途
公开(公告)号：US4734436A
公开(公告)日：1988-03-29
申请号：US806601
申请日：1985-12-09
申请人： Akira Kurozumi , Satoshi Ototake , Hitoshi Sato , Satoshi Tanabe , Tatsumi Hayaoka , Akio Masui
发明人： Akira Kurozumi , Satoshi Ototake , Hitoshi Sato , Satoshi Tanabe , Tatsumi Hayaoka , Akio Masui
IPC分类号： A01N47/34 , C07C67/00 , C07C239/00 , C07C275/54 , C07C335/26 , C07C157/12 , C07C127/22
CPC分类号： C07C335/26 , A01N47/34 , C07C275/54
摘要： Disclosed is a compound of the formula: ##STR1## wherein X.sub.1 and X.sub.3 represent chloro or fluoro, X.sub.2 represents hydrogen, chloro or fluoro, X.sub.4 represents hydrogen or halogen, X.sub.5 represents --CF.sub.3 or --OCF.sub.3, Y represents oxygen or sulfur and an insecticidal composition containing said compound, a method for killing insect pests and a process for producing said compound and its use as pesticide.
摘要翻译：公开了下式的化合物：其中X 1和X 3表示氯或氟，X 2表示氢，氯或氟，X 4表示氢或卤素，X 5表示-CF 3或-OCF 3，Y表示氧或硫以及含有所述化合物的杀虫剂组合物，杀虫剂的杀虫剂的方法以及所述化合物的制造方法及其作为农药的用途。

2. 发明授权

US09060051B2 Semi-automatic hinge with rotational angle restricting mechanism 有权
标题翻译：具有旋转角度限制机构的半自动铰链
公开(公告)号：US09060051B2
公开(公告)日：2015-06-16
申请号：US12998530
申请日：2009-11-19
申请人： Kiichiro Kitamura , Hitoshi Sato
发明人： Kiichiro Kitamura , Hitoshi Sato
IPC分类号： E05D11/08 , H04M1/02
CPC分类号： H04M1/0216 , Y10T16/5385 , Y10T16/5387
摘要： A single-shaft semi-automatic hinge, wherein a first cam and a second cam fitted on the single shaft of the hinge passing therethrough are abutted on each other with pressure application by an elastic member, thereby generating a rotational friction torque; a region of the first cam and the second cam in which a liquid crystal portion can rotate from a state in which a main body portion and the liquid crystal portion are folded to a fully open state is set narrower than a region in which the hinge can rotate.
摘要翻译：单轴半自动铰链，其中安装在通过其的铰链的单个轴上的第一凸轮和第二凸轮通过弹性构件施加压力而彼此抵靠，从而产生旋转摩擦转矩; 其中液晶部分可以从主体部分和液晶部分折叠到完全打开状态的状态旋转的第一凸轮和第二凸轮的区域被设定为窄于铰链可以旋转。

3. 发明授权

US09029588B2 Method for manufacturing refined chlorogenic acids composition 有权
标题翻译：精制绿原酸组合物的制造方法
公开(公告)号：US09029588B2
公开(公告)日：2015-05-12
申请号：US14128325
申请日：2012-06-21
申请人： Kenji Yamawaki , Yukiteru Sugiyama , Hitoshi Sato
发明人： Kenji Yamawaki , Yukiteru Sugiyama , Hitoshi Sato
IPC分类号： A61K31/216 , A23F5/22 , B01J39/04 , B01J41/04 , B01J47/02 , B01J20/20 , A61K36/74 , C02F1/76 , A23L1/30 , C07C67/56 , C02F1/42
CPC分类号： A61K31/216 , A23F5/223 , A23L33/105 , A61K36/74 , B01J20/20 , B01J39/05 , B01J39/07 , B01J41/05 , B01J41/07 , B01J47/026 , C02F1/42 , C02F1/76 , C07C67/56 , C07C2601/14 , C07C69/732
摘要： Provided is a method for producing a chlorogenic acids composition having a reduced caffeine content and good taste and favor, capable of efficiently recovering high purity of chlorogenic acids from a chlorogenic acids-containing composition. The method for producing a purified chlorogenic acids composition comprises a step A of bringing a chlorogenic acids-containing composition into contact with a cation exchange resin; a step B of bringing the liquid obtained in the step A into contact with an anion exchange resin; and a step C of bringing an eluent into contact with the anion exchange resin after the step B.
摘要翻译：本发明提供了能够有效地从含绿原酸的组合物中回收绿原酸的高纯度的，具有降低的咖啡因含量和良好的味道和有利性的绿原酸组合物的方法。纯化的绿原酸组合物的制造方法包括使含绿原酸的组合物与阳离子交换树脂接触的工序A; 使步骤A中获得的液体与阴离子交换树脂接触的步骤B; 以及在步骤B之后使洗脱液与阴离子交换树脂接触的步骤C.

4. 发明申请

US20130168833A1 METHOD FOR ENHANCING GROWTH OF SEMIPOLAR (Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：用于增强二氧化硅生长的方法（Al，In，Ga，B）N通过金属化学气相沉积
公开(公告)号：US20130168833A1
公开(公告)日：2013-07-04
申请号：US13776446
申请日：2013-02-25
申请人： Hitoshi Sato , John F. Kaeding , Michael Iza , Benjamin A. Haskell , Troy J. Baker , Steven P. DenBaars , Shuji Nakamura
发明人： Hitoshi Sato , John F. Kaeding , Michael Iza , Benjamin A. Haskell , Troy J. Baker , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L29/04 , H01L21/02
CPC分类号： H01L29/045 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/02365 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/0262
摘要： A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
摘要翻译：通过使用含有至少一些铟的（Al，In，Ga）N成核层，通过金属有机化学气相沉积（MOCVD）增强器件质量的平面半极性半导体薄膜的生长的方法。具体地，该方法包括将衬底装载到反应器中，在氮气和/或氢气和/或氨气流下加热衬底，在加热衬底上沉积In x Ga 1-x N成核层，在半导体衬底上沉积半极性氮化物半导体薄膜 In x Ga 1-x N成核层，并在氮气过压下冷却该衬底。

5. 发明申请

US20120205625A1 (Al, In, Ga, B)N DEVICE STRUCTURES ON A PATTERNED SUBSTRATE 有权
标题翻译：（Al，In，Ga，B）N图案基板上的器件结构
公开(公告)号：US20120205625A1
公开(公告)日：2012-08-16
申请号：US13454321
申请日：2012-04-24
申请人： Michael Iza , Hitoshi Sato , Eu Jin Hwang , Steven P. DenBaars , Shuji Nakamura
发明人： Michael Iza , Hitoshi Sato , Eu Jin Hwang , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L29/205 , H01L21/20
CPC分类号： H01L33/04 , H01L33/12 , H01L33/32
摘要： A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of InxGa1-xN and InyGa1-yN where 0
摘要翻译：在图案化衬底上的氮化物发光二极管，包括具有In x Ga 1-x N和In y Ga 1-y N的交替层的至少两个周期的氮化物中间层，其中0

6. 发明授权

US08193079B2 Method for conductivity control of (Al,In,Ga,B)N 有权
标题翻译：（Al，In，Ga，B）N的电导率控制方法
公开(公告)号：US08193079B2
公开(公告)日：2012-06-05
申请号：US11673426
申请日：2007-02-09
申请人： John F. Kaeding , Hitoshi Sato , Michael Iza , Hirokuni Asamizu , Hong Zhong , Steven P. DenBaars , Shuji Nakamura
发明人： John F. Kaeding , Hitoshi Sato , Michael Iza , Hirokuni Asamizu , Hong Zhong , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L21/04
CPC分类号： H01L21/2654 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02579 , H01L21/02609 , H01L21/0262 , H01L29/045 , H01L29/2003 , H01L29/207
摘要： A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.
摘要翻译：（Al，In，Ga，B）N半导体晶体中受控p型导电性的方法。实例包括在{011}方向沉积在{100} MgAl 2 O 4尖晶石衬底miscut上的{10 11} GaN膜。可以有意地将Mg原子并入生长的半极性氮化物薄膜中以在半导体晶体的带结构中引入可用的电子态，导致p型导电性。也可以使用导致类似的合适电子状态引入的其它杂质原子，例如Zn或C。

7. 发明授权

US08148713B2 Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes 有权
公开(公告)号：US08148713B2
公开(公告)日：2012-04-03
申请号：US12419119
申请日：2009-04-06
申请人： Hitoshi Sato , Hirohiko Hirasawa , Roy B. Chung , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Hitoshi Sato , Hirohiko Hirasawa , Roy B. Chung , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L29/06
CPC分类号： H01L33/32 , H01L21/0254 , H01L21/02579 , H01L21/02609 , H01L21/0262 , H01L33/02 , H01L33/08 , Y10S977/755
摘要： A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.

8. 发明授权

US07958602B2 Hinge mechanism 有权
标题翻译：铰链机构
公开(公告)号：US07958602B2
公开(公告)日：2011-06-14
申请号：US12513664
申请日：2007-11-02
申请人： Katsuhito Nishizawa , Satoshi Mochizuki , Hitoshi Sato
发明人： Katsuhito Nishizawa , Satoshi Mochizuki , Hitoshi Sato
IPC分类号： E05D3/10
CPC分类号： H04M1/0222 , E05D3/10 , E05D11/1078 , E05Y2900/606 , G06F1/1616 , G06F1/1681 , Y10T16/54044 , Y10T16/5472
摘要： A hinge mechanism in which two housings are respectively connected to a first rotation shaft and a second rotation shaft that are arranged perpendicular to each other and the housing are arbitrarily openable about either one of the shafts is provided. In the hinge mechanism 1, at an end of a rotation shaft holding section (4) of a hinge housing (1), an end of an opening and closing shaft holding section (5) is integrated together in a state of being perpendicular to each other, the rotation shaft holding section (4) being formed in it a tubular shaft hole for supporting a rotation shaft section (3), and the opening and closing shaft holding section (5) being formed in it a tubular shaft hole for supporting an opening and closing shaft section (2), and the hinge housing (1) is substantially L-shaped as a whole. When the opening and closing shaft (2) is rotated, an opening and closing limiting outer peripheral surface enters an escape recess to cause a restraining end section to be restrained by the opening and closing limiting outer peripheral surface, and as a result, rotation of the rotation shaft section (3) is restrained. When the rotation shaft section (3) is rotated, a rotation limiting outer peripheral surface of the rotation shaft section (3) enters a portion of a restraining end surface to cause rotation of the opening and closing shaft (2) to be restrained.
摘要翻译：一种铰链机构，其中两个壳体分别连接到彼此垂直布置的第一旋转轴和第二旋转轴，并且壳体围绕任一个轴可任意打开。在铰链机构1中，在铰链壳体（1）的旋转轴保持部（4）的端部，开闭轴保持部（5）的端部与垂直于每个另一方面，旋转轴保持部（4）形成有用于支撑旋转轴部（3）的管状轴孔，开闭轴保持部（5）形成有用于支撑旋转轴部打开和关闭轴部分（2），并且铰链壳体（1）整体上基本上是L形的。当打开和关闭轴（2）旋转时，开闭限制外周面进入逃逸凹部，使得限制端部被开闭限制外周面约束，结果是旋转旋转轴部（3）被限制。当旋转轴部（3）旋转时，旋转轴部（3）的旋转限制外周面进入限制端面的一部分，从而使开闭轴（2）的转动受到抑制。

9. 发明授权

US07939213B2 Fuel cell system and electric vehicle including the fuel cell system 有权
标题翻译：燃料电池系统和电动汽车，包括燃料电池系统
公开(公告)号：US07939213B2
公开(公告)日：2011-05-10
申请号：US10565101
申请日：2004-08-18
申请人： Tetsuhiro Ishikawa , Hiroshi Yoshida , Hitoshi Sato
发明人： Tetsuhiro Ishikawa , Hiroshi Yoshida , Hitoshi Sato
IPC分类号： H01M8/04 , B60L11/18
CPC分类号： B60L11/1892 , B60L11/1881 , Y02T90/34
摘要： In a fuel cell system in which load electric power is supplied from a fuel cell and a secondary battery, intermittent operation is performed, that is, operation of the fuel cell is stopped and the load electric power is supplied from the secondary battery in a low load region. At this time, a threshold value for stopping and starting the operation of the fuel cell is adjusted according to open circuit voltage. Thus, it is possible to prevent fuel from being unnecessarily consumed in order to maintain the open circuit voltage at a predetermined value when the operation of the fuel cell is stopped, and to improve response of the fuel cell when the operation of the fuel cell is restarted after the open circuit voltage has decreased in the fuel cell that has stopped generating electric power.
摘要翻译：在从燃料电池和二次电池供给负荷电力的燃料电池系统中，进行间歇运转，即停止燃料电池的运转，并且从二次电池供给低负荷电力负载区域。此时，根据开路电压来调整用于停止和开始燃料电池的操作的阈值。因此，当燃料电池的运转停止时，可以防止不必要地消耗燃料以便将燃料电池的运行维持在预定值，并且当燃料电池的操作为在已经停止发电的燃料电池中开路电压降低之后重启。

10. 发明授权

US07843984B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07843984B2
公开(公告)日：2010-11-30
申请号：US12392452
申请日：2009-02-25
申请人： Toru Takayama , Hiroki Nagai , Hitoshi Sato , Tomoya Satoh , Isao Kidoguchi
发明人： Toru Takayama , Hiroki Nagai , Hitoshi Sato , Tomoya Satoh , Isao Kidoguchi
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： H01S5/32325 , H01S5/0224 , H01S5/026 , H01S5/0425 , H01S5/2218 , H01S5/3202 , H01S5/32316 , H01S5/4087
摘要： A semiconductor laser device has a red laser element and an infrared laser element on a substrate. The red laser element has a double hetero structure in which an InGaP-based or AlGaInP-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. The infrared laser element has a double hetero structure in which a GaAs-based or AlGaAs-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. Provided that a first electrode formed over the second conductivity type cladding layer has a width W1 in a direction perpendicular to a cavity length direction and a second electrode formed over the second conductivity type cladding layer has a width W2 in a direction perpendicular to a cavity length direction, the relations of W1>W2 and 80 μm≧W2≧60 μm are satisfied.
摘要翻译：半导体激光装置在基板上具有红色激光元件和红外激光元件。红色激光元件具有双异质结构，其中InGaP基或AlGaInP基有源层插入在具有脊的第一导电型包层和第二导电型包覆层之间。红外激光元件具有双异质结构，其中在第一导电型包覆层和具有脊的第二导电型包覆层之间插入GaAs基或AlGaAs基有源层。假设形成在第二导电类型包层上的第一电极在垂直于空腔长度方向的方向上具有宽度W1，并且形成在第二导电类型包层上的第二电极在垂直于腔长度的方向上具有宽度W2 方向，满足W1> W2和80μm≥W2≥60μm的关系。

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