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1. 发明授权

US5798550A Vertical type semiconductor device and gate structure 失效
标题翻译：垂直型半导体器件和栅极结构
公开(公告)号：US5798550A
公开(公告)日：1998-08-25
申请号：US469622
申请日：1995-06-06
申请人： Akira Kuroyanagi , Masami Yamaoka , Yoshifumi Okabe , Yasuaki Tsuzuki , Yutaka Tomatsu
发明人： Akira Kuroyanagi , Masami Yamaoka , Yoshifumi Okabe , Yasuaki Tsuzuki , Yutaka Tomatsu
IPC分类号： H01L21/336 , H01L29/423 , H01L29/78 , H01L29/76 , H01L29/94 , H01L31/062
CPC分类号： H01L29/66719 , H01L29/402 , H01L29/42368 , H01L29/66712 , H01L29/7811 , H01L29/0615 , H01L29/0638 , H01L29/1095
摘要： The present invention involves a vertical type semiconductor device whereby miniaturization and lowered ON resistance of a cell within the device can be achieved without impairing the functioning of the device. The line width of the gate electrode is made smaller to meeting the demand for miniaturization of the cell while the distance between the channel regions which are diffused into the portions below the gate during double diffusion remains virtually equal to that in the device of larger cell size having a low J.sub.FET resistance component. While the width of the gate electrode is set to be smaller, the mask members used during double diffusion are attached to the side walls of the gate electrode, where their width allows the source region to diffuse to the portion under the gate. Accordingly, miniaturization and lowered ON resistance of the cell can be achieved without impairing the functioning of the device.
摘要翻译：本发明涉及垂直型半导体器件，由此可以实现器件内的电池的小型化和降低的导通电阻，而不会损害器件的功能。使栅电极的线宽变小以满足电池小型化的需要，而在双扩散期间扩散到栅极下方的沟道区域之间的距离实际上等于在较大单元尺寸的器件中的沟道区域之间的距离具有低JFET电阻分量。虽然栅电极的宽度设定得较小，但是在双扩散期间使用的掩模构件附接到栅电极的侧壁，其宽度允许源极区域扩散到栅极下方的部分。因此，可以实现电池的小型化和降低的导通电阻，而不会损害器件的功能。

2. 发明授权

US06949434B2 Method of manufacturing a vertical semiconductor device 失效
标题翻译：制造垂直半导体器件的方法
公开(公告)号：US06949434B2
公开(公告)日：2005-09-27
申请号：US10880048
申请日：2004-06-29
申请人： Yoshifumi Okabe , Masami Yamaoka , Akira Kuroyanagi
发明人： Yoshifumi Okabe , Masami Yamaoka , Akira Kuroyanagi
IPC分类号： H01L21/28 , H01L21/285 , H01L21/304 , H01L21/336 , H01L29/06 , H01L29/167 , H01L29/34 , H01L29/417 , H01L29/45 , H01L29/76 , H01L29/78 , H01L29/94 , H01L31/062 , H01L21/3205 , H01L21/44
CPC分类号： H01L29/7802 , H01L21/28 , H01L21/28512 , H01L21/304 , H01L29/0657 , H01L29/167 , H01L29/34 , H01L29/41741 , H01L29/456 , H01L29/66712 , H01L2924/0002 , H01L2924/10158 , Y10S148/135 , Y10S438/928 , Y10S438/938 , Y10S438/964 , Y10S438/977 , H01L2924/00
摘要： A method of manufacturing a vertical semiconductor device includes preparing a semiconductor wafer which has a heavily doped semiconductor substrate and a lightly doped semiconductor layer disposed over the semiconductor substrate, forming a semiconductor element at a surface portion of the semiconductor layer, forming a first metal layer for a first electrode of the semiconductor element over the surface portion of the semiconductor layer, grinding a back of the semiconductor substrate to thin the semiconductor substrate and roughen a back surface of the semiconductor substrate, performing a wet etching upon the back surface; and forming on the back surface a second metal layer for a second electrode of the semiconductor element.
摘要翻译：一种制造垂直半导体器件的方法包括制备半导体晶片，该半导体晶片具有重掺杂半导体衬底和设置在半导体衬底上的轻掺杂半导体层，在半导体层的表面部分形成半导体元件，形成第一金属层在半导体层的表面部分上的半导体元件的第一电极，研磨半导体衬底的背面以使半导体衬底细化并粗糙化半导体衬底的背面，对背面进行湿式蚀刻; 以及在所述背面上形成用于所述半导体元件的第二电极的第二金属层。

3. 发明授权

US06649478B2 Semiconductor device and method of manufacturing same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06649478B2
公开(公告)日：2003-11-18
申请号：US10283981
申请日：2002-10-30
申请人： Yoshifumi Okabe , Masami Yamaoka , Akira Kuroyanagi
发明人： Yoshifumi Okabe , Masami Yamaoka , Akira Kuroyanagi
IPC分类号： H01L21336
CPC分类号： H01L29/7802 , H01L21/28 , H01L21/28512 , H01L21/304 , H01L29/0657 , H01L29/167 , H01L29/34 , H01L29/41741 , H01L29/456 , H01L29/66712 , H01L2924/0002 , H01L2924/10158 , Y10S148/135 , Y10S438/928 , Y10S438/938 , Y10S438/964 , Y10S438/977 , H01L2924/00
摘要： A semiconductor device including an N-type semiconductor substrate which includes arsenic as an impurity, a first electrode formed on a main surface of the N-type semiconductor substrate, a ground surface formed on another surface of the N-type semiconductor substrate, a second electrode formed on the ground surface and ohmically-contacted with the N-type semiconductor substrate, a semiconductor element formed in the N-type semiconductor substrate and flowing current between the first electrode and the second electrode during ON-state thereof. The device has a reduced ON-resistance thereof.
摘要翻译：一种半导体器件，包括包含砷作为杂质的N型半导体衬底，形成在N型半导体衬底的主表面上的第一电极，形成在N型半导体衬底的另一表面上的接地表面，第二电极，其形成在地表面上并与N型半导体衬底欧姆接触，形成在N型半导体衬底中的半导体元件和在其第一电极和第二电极之间的流动电流。该器件具有降低的导通电阻。

4. 发明授权

US5663096A Method of manufacturing a vertical semiconductor device with ground surface providing a reduced ON resistance 失效
标题翻译：制造具有提供降低的导通电阻的地面的垂直半导体器件的方法
公开(公告)号：US5663096A
公开(公告)日：1997-09-02
申请号：US473775
申请日：1995-06-06
申请人： Yoshifumi Okabe , Masami Yamaoka , Akira Kuroyanagi
发明人： Yoshifumi Okabe , Masami Yamaoka , Akira Kuroyanagi
IPC分类号： H01L21/28 , H01L21/285 , H01L21/304 , H01L21/336 , H01L29/06 , H01L29/167 , H01L29/34 , H01L29/417 , H01L29/45 , H01L29/76 , H01L29/78 , H01L29/94 , H01L31/062 , H01L21/44
CPC分类号： H01L29/66712 , H01L21/28 , H01L21/28512 , H01L21/304 , H01L29/0657 , H01L29/34 , H01L29/41741 , H01L29/7802 , H01L29/167 , H01L29/456 , H01L2924/0002 , H01L2924/10158 , Y10S148/135 , Y10S438/928 , Y10S438/938 , Y10S438/964 , Y10S438/977
摘要： A semiconductor device including an N-type semiconductor substrate which includes arsenic as an impurity, a first electrode formed on a main surface of the N-type semiconductor substrate, a ground surface formed on another surface of the N-type semiconductor substrate, a second electrode formed on the ground surface and ohmically-contacted with the N-type semiconductor substrate, a semiconductor element formed in the N-type semiconductor substrate and flowing current between the first electrode and the second electrode during ON-state thereof. The device has a reduced ON-resistance thereof.
摘要翻译：一种半导体器件，包括包含砷作为杂质的N型半导体衬底，形成在N型半导体衬底的主表面上的第一电极，形成在N型半导体衬底的另一表面上的接地表面，第二电极，其形成在地表面上并与N型半导体衬底欧姆接触，形成在N型半导体衬底中的半导体元件和在其第一电极和第二电极之间的流动电流。该器件具有降低的导通电阻。

5. 发明申请

US20050227438A1 Semiconductor device and method of manufacturing same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050227438A1
公开(公告)日：2005-10-13
申请号：US11140756
申请日：2005-05-31
申请人： Yoshifumi Okabe , Masami Yamaoka , Akira Kuroyanagi
发明人： Yoshifumi Okabe , Masami Yamaoka , Akira Kuroyanagi
IPC分类号： H01L21/28 , H01L21/285 , H01L21/304 , H01L21/336 , H01L29/06 , H01L29/167 , H01L29/34 , H01L29/417 , H01L29/45 , H01L29/76 , H01L29/78 , H01L29/94 , H01L31/062
CPC分类号： H01L29/7802 , H01L21/28 , H01L21/28512 , H01L21/304 , H01L29/0657 , H01L29/167 , H01L29/34 , H01L29/41741 , H01L29/456 , H01L29/66712 , H01L2924/0002 , H01L2924/10158 , Y10S148/135 , Y10S438/928 , Y10S438/938 , Y10S438/964 , Y10S438/977 , H01L2924/00
摘要： A semiconductor device including an N-type semiconductor substrate which includes arsenic as an impurity, a first electrode formed on a main surface of the N-type semiconductor substrate, a ground surface formed on another surface of the N-type semiconductor substrate, a second electrode formed on the ground surface and ohmically-contacted with the N-type semiconductor substrate, a semiconductor element formed in the N-type semiconductor substrate and flowing current between the first electrode and the second electrode during ON-state thereof. The device has a reduced ON-resistance thereof.
摘要翻译：一种半导体器件，包括包含砷作为杂质的N型半导体衬底，形成在N型半导体衬底的主表面上的第一电极，形成在N型半导体衬底的另一表面上的接地表面，第二电极，其形成在地表面上并与N型半导体衬底欧姆接触，形成在N型半导体衬底中的半导体元件和在其第一电极和第二电极之间的流动电流。该器件具有降低的导通电阻。

6. 发明授权

US5689130A Vertical semiconductor device with ground surface providing a reduced ON resistance 失效
标题翻译：具有地面的垂直半导体器件提供降低的导通电阻
公开(公告)号：US5689130A
公开(公告)日：1997-11-18
申请号：US409900
申请日：1995-03-22
申请人： Yoshifumi Okabe , Masami Yamaoka , Akira Kuroyanagi
发明人： Yoshifumi Okabe , Masami Yamaoka , Akira Kuroyanagi
IPC分类号： H01L21/28 , H01L21/285 , H01L21/304 , H01L21/336 , H01L29/06 , H01L29/167 , H01L29/34 , H01L29/417 , H01L29/45 , H01L29/76 , H01L29/78 , H01L29/94 , H01L31/062 , H01L23/48 , H01L23/52
CPC分类号： H01L29/66712 , H01L21/28 , H01L21/28512 , H01L21/304 , H01L29/0657 , H01L29/34 , H01L29/41741 , H01L29/7802 , H01L29/167 , H01L29/456 , H01L2924/0002 , H01L2924/10158 , Y10S148/135 , Y10S438/928 , Y10S438/938 , Y10S438/964 , Y10S438/977
摘要： A semiconductor device including an N-type semiconductor substrate which includes arsenic as an impurity, a first electrode formed on a main surface of the N-type semiconductor substrate, a ground surface formed on another surface of the N-type semiconductor substrate, a second electrode formed on the ground surface and ohmically-contacted with the N-type semiconductor substrate, a semiconductor element formed in the N-type semiconductor substrate and flowing current between the first electrode and the second electrode during ON-state thereof. The device has a reduced ON-resistance thereof.
摘要翻译：一种半导体器件，包括包含砷作为杂质的N型半导体衬底，形成在N型半导体衬底的主表面上的第一电极，形成在N型半导体衬底的另一表面上的接地表面，第二电极，其形成在地表面上并与N型半导体衬底欧姆接触，形成在N型半导体衬底中的半导体元件和在其第一电极和第二电极之间的流动电流。该器件具有降低的导通电阻。

7. 发明授权

US5250449A Vertical type semiconductor device and method for producing the same 失效
标题翻译：垂直型半导体装置及其制造方法
公开(公告)号：US5250449A
公开(公告)日：1993-10-05
申请号：US767313
申请日：1991-09-30
申请人： Akira Kuroyanagi , Masami Yamaoka , Yoshifumi Okabe
发明人： Akira Kuroyanagi , Masami Yamaoka , Yoshifumi Okabe
IPC分类号： H01L21/336 , H01L29/10 , H01L29/423 , H01L29/739 , H01L29/78 , H01L21/265
CPC分类号： H01L29/66719 , H01L29/1095 , H01L29/66712 , H01L29/7811 , H01L29/0615 , H01L29/0638 , H01L29/402 , H01L29/42368 , Y10S148/126
摘要： The present invention has as an object the provision of a vertical type semiconductor device whereby miniaturization and lowered ON resistance of the cell can be achieved without impairing the functioning of the device.The line width of the gate electrode is made smaller to meet the demand for miniaturization of the cell, but the distance between the channel regions diffused into the portions below the gate at the time of double diffusion is kept to be virtually equal to that in the device of larger cell size having a low J.sub.FET resistance component. Here, the reason for making the line width of the gate electrode smaller is for securing an area for the source contact.The point is that, while the width of the gate electrode is set to be smaller, the mask members as the mask for double diffusion, having the width allowing the source region to diffuse to the portion under the gate, are attached to the side walls of the gate electrode.Thereby, miniaturization and lowered ON resistance of the cell can be achieved without impairing the functioning of the device.
摘要翻译：本发明的目的是提供一种垂直型半导体器件，由此可以实现电池的小型化和降低的导通电阻，而不会损害器件的功能。使栅电极的线宽变小以满足电池小型化的需要，但是扩散到双扩散时的栅极下方的沟道区域之间的距离保持实质上等于具有低JFET电阻分量的较大单元尺寸的器件。这里，使栅电极的线宽变小的原因是为了确保源极接触的面积。要注意的是，尽管栅电极的宽度被设定得较小，但是具有允许源极区域扩散到栅极下方的宽度的双扩散掩模的掩模构件附接到侧壁的栅电极。由此，可以实现电池的小型化和降低的导通电阻，而不会损害器件的功能。

8. 发明授权

US07064033B2 Semiconductor device and method of manufacturing same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07064033B2
公开(公告)日：2006-06-20
申请号：US10880044
申请日：2004-06-29
申请人： Yoshifumi Okabe , Masami Yamaoka , Akira Kuroyanagi
发明人： Yoshifumi Okabe , Masami Yamaoka , Akira Kuroyanagi
IPC分类号： H01L21/336
CPC分类号： H01L29/7802 , H01L21/28 , H01L21/28512 , H01L21/304 , H01L29/0657 , H01L29/167 , H01L29/34 , H01L29/41741 , H01L29/456 , H01L29/66712 , H01L2924/0002 , H01L2924/10158 , Y10S148/135 , Y10S438/928 , Y10S438/938 , Y10S438/964 , Y10S438/977 , H01L2924/00
摘要： A semiconductor device including an N-type semiconductor substrate which includes arsenic as an impurity, a first electrode formed on a main surface of the N-type semiconductor substrate, a ground surface formed on another surface of the N-type semiconductor substrate, a second electrode formed on the ground surface and ohmically-contacted with the N-type semiconductor substrate, a semiconductor element formed in the N-type semiconductor substrate and flowing current between the first electrode and the second electrode during On-state thereof. The device has a reduced ON-resistance thereof.
摘要翻译：一种半导体器件，包括包含砷作为杂质的N型半导体衬底，形成在N型半导体衬底的主表面上的第一电极，形成在N型半导体衬底的另一表面上的接地表面，第二电极，其形成在地表面上并且与N型半导体衬底形成欧姆接触，形成在N型半导体衬底中的半导体元件以及在其第一电极和第二电极之间的流动电流。该器件具有降低的导通电阻。

9. 发明授权

US06903417B2 Power semiconductor device 失效
标题翻译：功率半导体器件
公开(公告)号：US06903417B2
公开(公告)日：2005-06-07
申请号：US10651277
申请日：2003-08-28
申请人： Yoshifumi Okabe , Masami Yamaoka , Akira Kuroyanagi
发明人： Yoshifumi Okabe , Masami Yamaoka , Akira Kuroyanagi
IPC分类号： H01L21/28 , H01L21/285 , H01L21/304 , H01L21/336 , H01L29/06 , H01L29/167 , H01L29/34 , H01L29/417 , H01L29/45 , H01L29/76 , H01L29/78 , H01L29/94 , H01L31/062 , H01L23/48 , H01L23/52
CPC分类号： H01L29/7802 , H01L21/28 , H01L21/28512 , H01L21/304 , H01L29/0657 , H01L29/167 , H01L29/34 , H01L29/41741 , H01L29/456 , H01L29/66712 , H01L2924/0002 , H01L2924/10158 , Y10S148/135 , Y10S438/928 , Y10S438/938 , Y10S438/964 , Y10S438/977 , H01L2924/00
摘要： A semiconductor device including an N-type semiconductor substrate which includes arsenic as an impurity, a first electrode formed on a main surface of the N-type semiconductor substrate, a ground surface formed on another surface of the N-type semiconductor substrate, a second electrode formed on the ground surface and ohmically-contacted with the N-type semiconductor substrate, a semiconductor element formed in the N-type semiconductor substrate and flowing current between the first electrode and the second electrode during ON-state thereof. The device has a reduced ON-resistance thereof.
摘要翻译：一种半导体器件，包括包含砷作为杂质的N型半导体衬底，形成在N型半导体衬底的主表面上的第一电极，形成在N型半导体衬底的另一表面上的接地表面，第二电极，其形成在地表面上并与N型半导体衬底欧姆接触，形成在N型半导体衬底中的半导体元件和在其第一电极和第二电极之间的流动电流。该器件具有降低的导通电阻。

10. 发明授权

US06498366B1 Semiconductor device that exhibits decreased contact resistance between substrate and drain electrode 失效
标题翻译：在衬底和漏极之间表现出降低的接触电阻的半导体器件
公开(公告)号：US06498366B1
公开(公告)日：2002-12-24
申请号：US08962322
申请日：1997-10-31
申请人： Yoshifumi Okabe , Masami Yamaoka , Akira Kuroyanagi
发明人： Yoshifumi Okabe , Masami Yamaoka , Akira Kuroyanagi
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L21/28 , H01L21/28512 , H01L21/304 , H01L29/0657 , H01L29/167 , H01L29/34 , H01L29/41741 , H01L29/456 , H01L29/66712 , H01L2924/0002 , H01L2924/10158 , Y10S148/135 , Y10S438/928 , Y10S438/938 , Y10S438/964 , Y10S438/977 , H01L2924/00
摘要： A semiconductor device including an N-type semiconductor substrate which includes arsenic as an impurity, a first electrode formed on a main surface of the N-type semiconductor substrate, a ground surface formed on another surface of the N-type semiconductor substrate, a second electrode formed on the ground surface and ohmically-contacted with the N-type semiconductor substrate, a semiconductor element formed in the N-type semiconductor substrate and flowing current between the first electrode and the second electrode during ON-state thereof. The device has a reduced ON-resistance thereof.
摘要翻译：一种半导体器件，包括包含砷作为杂质的N型半导体衬底，形成在N型半导体衬底的主表面上的第一电极，形成在N型半导体衬底的另一表面上的接地表面，第二电极，其形成在地表面上并与N型半导体衬底欧姆接触，形成在N型半导体衬底中的半导体元件和在其第一电极和第二电极之间的流动电流。该器件具有降低的导通电阻。

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