专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5898662A Semiconductor light emitting device, its manufacturing method and optical recording and/or reproducing apparatus 失效
标题翻译：半导体发光器件，其制造方法和光学记录和/或再现装置
公开(公告)号：US5898662A
公开(公告)日：1999-04-27
申请号：US967095
申请日：1997-11-10
申请人： Akira Ishibashi , Satoshi Taniguchi , Tomonori Hino , Takashi Kobayashi , Kazushi Nakano , Norikazu Nakayama
发明人： Akira Ishibashi , Satoshi Taniguchi , Tomonori Hino , Takashi Kobayashi , Kazushi Nakano , Norikazu Nakayama
IPC分类号： H01L33/00 , H01L33/02 , H01L33/28 , H01S5/042 , H01S5/32 , H01S5/327 , H01S5/347 , H01S3/18
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/0087 , H01L33/025 , H01S5/347 , H01S2301/173 , H01S5/0421 , H01S5/3203 , H01S5/327
摘要： A semiconductor light emitting device comprises: a compound semiconductor substrate; an n-type cladding layer on the compound semiconductor substrate; an active layer on the n-type cladding layer; a p-type cladding layer on the active layer: and a p-type contact layer on the p-type cladding layer, the n-type cladding layer, the active layer, the p-type cladding layer and the p-type contact layer being made of II-VI compound semiconductors containing at least one of group II elements selected from the group consisting of Zn, Cd, Mg, Hg and Be and at least one of group VI elements selected from the group consisting of S, Se, Te and O, characterized in that at least the active layer has undulations and at least the p-type layer is flat. A method for manufacturing a semiconductor light emitting device having: a compound semiconductor substrate; an n-type cladding layer on the compound semiconductor substrate; an active layer on the n-type cladding layer; and a p-type cladding layer on the active layer, the n-type cladding layer, the active layer and the p-type cladding layer being made of II-VI compound semiconductors containing at least one of group II elements selected from the group consisting of Zn, Cd, Mg, Hg and Be and at least one of group VI elements selected from the group consisting of S, Se, Te and O, characterized in that the n-type cladding layer, the active layer and said p-type cladding layer are grown by varying, for the respective layers, the ratio of the molecular beam intensity of the group VI element relative to the molecular beam intensity of the group II element.
摘要翻译：一种半导体发光器件包括：化合物半导体衬底; 在化合物半导体衬底上的n型覆层; 在n型包覆层上的有源层; 有源层上的p型覆层和p型覆层的p型接触层，n型包覆层，有源层，p型包覆层和p型接触层由含有选自Zn，Cd，Mg，Hg和Be中的II族元素中的至少一种的II-VI化合物半导体和选自S，Se，Te中的至少一种VI族元素中的至少一种和O，其特征在于至少所述活性层具有起伏并且至少所述p型层是平坦的。一种半导体发光器件的制造方法，其具有：化合物半导体基板; 在化合物半导体衬底上的n型覆层; 在n型包覆层上的有源层; 和p型包覆层，n型包覆层，有源层和p型覆层由含有选自以下的II族元素中的至少一种的II-VI族化合物半导体构成：的Zn，Cd，Mg，Hg和Be以及选自S，Se，Te和O的VI族元素中的至少一种，其特征在于，所述n型包覆层，所述有源层和所述p型通过对于各层改变VI族元素的分子束强度相对于II族元素的分子束强度的比例，生长包覆层。

2. 发明授权

US6031244A Luminescent semiconductor device with antidiffusion layer on active layer surface 失效
标题翻译：在有源层表面具有防扩散层的发光半导体器件
公开(公告)号：US6031244A
公开(公告)日：2000-02-29
申请号：US987105
申请日：1997-12-08
申请人： Hiroyasu Noguchi , Kazushi Nakano , Akira Ishibashi , Atsushi Toda , Satoshi Taniguchi , Tomonori Hino , Eisaku Kato
发明人： Hiroyasu Noguchi , Kazushi Nakano , Akira Ishibashi , Atsushi Toda , Satoshi Taniguchi , Tomonori Hino , Eisaku Kato
IPC分类号： H01L33/28 , H01L33/00
CPC分类号： H01L33/28
摘要： A luminescent semiconductor device comprises: an active layer composed of a Group II-VI semiconductor device which comprises at least one Group II element selected from the group consisting of zinc, magnesium, beryllium, cadmium, manganese and mercury, and at least one Group VI element selected from the group consisting of oxygen, sulfur, selenium and tellurium. the Group II-VI compound semiconductor forming said active layer contains at least one element selected from the group consisting of magnesium, beryllium and cadmium as the Group II element and tellurium as the Group VI element. At least one antidiffusion layer preventing diffusion of these elements from the active layer is provided on at least one surface of the active layer.
摘要翻译：发光半导体器件包括：由II-VI族半导体器件组成的有源层，其包含选自锌，镁，铍，镉，锰和汞中的至少一种II族元素，以及至少一种VI族元素选自氧，硫，硒和碲。形成所述活性层的II-VI族化合物半导体含有选自镁，铍和镉中的至少一种元素作为第II族元素，碲作为VI族元素。至少一个防扩散层防止这些元件从活性层扩散到活性层的至少一个表面上。

3. 发明授权

US5633514A Semiconductor light emitting device with lattice-matching and lattice-mismatching 失效
标题翻译：具有晶格匹配和晶格失配的半导体发光器件
公开(公告)号：US5633514A
公开(公告)日：1997-05-27
申请号：US570376
申请日：1995-12-11
申请人： Masashi Shiraishi , Satoshi Ito , Kazushi Nakano , Akira Ishibashi , Masao Ikeda , Hiroyuki Okuyama , Katsuhiro Akimoto , Tomonori Hino , Masakazu Ukita
发明人： Masashi Shiraishi , Satoshi Ito , Kazushi Nakano , Akira Ishibashi , Masao Ikeda , Hiroyuki Okuyama , Katsuhiro Akimoto , Tomonori Hino , Masakazu Ukita
IPC分类号： H01L33/00 , H01L33/28 , H01S5/32 , H01S5/327
CPC分类号： H01L33/28 , H01L33/0087 , H01S5/327 , H01S5/3201
摘要： The semiconductor light emitting device includes a semiconductor substrate (1), a first conductivity type first cladding layer (2) deposited on the semiconductor substrate (1), an active layer (4) deposited on the first cladding layer (2), and the second conductivity type second cladding layer (6) deposited on the active layer (4). The first and the second cladding layers (2, 6) are made of the II/VI-compound semiconductors including at least one kind of group II elements such as Zn, Hg, Cd, Mg and at least one kind of group VI elements such as S, Se, Te. The lattice mismatching .DELTA.a/a (%) between at least one of the first cladding layer (2) and the second cladding layer (6) and the substrate is set within the range of -0.9%.ltoreq..DELTA.Aa/a.ltoreq.0.5% (reference symbols a and a.sub.c represent the lattice constant of the semiconductor substrate and the lattice constant of at least either of the first and second cladding layers, and .DELTA.a is obtained from .DELTA.a=a.sub.c -a).
摘要翻译：半导体发光器件包括半导体衬底（1），沉积在半导体衬底（1）上的第一导电型第一包覆层（2），沉积在第一覆层（2）上的有源层（4）沉积在有源层（4）上的第二导电类型的第二包覆层（6）。第一和第二覆层（2,6）由包括Zn，Hg，Cd，Mg中的至少一种II族元素和至少一种VI族元素的II / VI族化合物半导体制成，作为S，Se，Te。在第一包层（2）和第二包覆层（6）中的至少一个与基板之间的晶格失配DELTA a / a（％）设定在-0.9％的范围内ΔTAAa/ /=0.5%（参考符号a和ac表示半导体衬底的晶格常数和第一和第二包层中的至少任一个的晶格常数，并且DELTA a从DELTA a = ac-a获得）。

4. 发明授权

US5872023A Method of fabricating of light emitting device with controlled lattice mismatch 失效
标题翻译：具有受控晶格失配的发光器件的制造方法
公开(公告)号：US5872023A
公开(公告)日：1999-02-16
申请号：US829214
申请日：1997-03-31
申请人： Masashi Shiraishi , Satoshi Ito , Kazushi Nakano , Akira Ishibashi , Masao Ikeda , Hiroyuki Okuyama , Katsuhiro Akimoto , Tomonori Hino , Masakazu Ukita
发明人： Masashi Shiraishi , Satoshi Ito , Kazushi Nakano , Akira Ishibashi , Masao Ikeda , Hiroyuki Okuyama , Katsuhiro Akimoto , Tomonori Hino , Masakazu Ukita
IPC分类号： H01L33/00 , H01L33/28 , H01S5/32 , H01S5/327 , H01S3/19
CPC分类号： H01L33/28 , H01L33/0087 , H01S5/327 , H01S5/3201
摘要： The semiconductor light emitting device includes a semiconductor substrate (1), a first conductivity type first cladding layer (2) deposited on the semiconductor substrate (1), an active layer (4) deposited on the first cladding layer (2), and the second conductivity type second cladding layer (6) deposited on the active layer (4). The first and the second cladding layers (2, 6) are made of the II/VI-compound semiconductors including at least one kind of II group elements such as Zn, Hg, Cd, Mg and at least one kind of VI group elements such as S, Se, Te. The lattice mismatching .DELTA.a/a (%) between at least one of the first cladding layer (2) and the second cladding layer (6) and the substrate is set within the range of -0.9%.ltoreq..DELTA.a/a.ltoreq.0.5% (reference symbols a and a.sub.c represent the lattice constant of the semiconductor substrate and the lattice constant of at least either of the first and second cladding layers, and .DELTA.a is obtained from .DELTA.a=a.sub.c -a).
摘要翻译：半导体发光器件包括半导体衬底（1），沉积在半导体衬底（1）上的第一导电型第一包覆层（2），沉积在第一覆层（2）上的有源层（4）沉积在有源层（4）上的第二导电类型的第二包覆层（6）。第一和第二覆层（2,6）由包括Zn，Hg，Cd，Mg中的至少一种II族元素的II / VI化合物半导体和至少一种VI族元素构成作为S，Se，Te。第一包层（2）和第二包覆层（6）中的至少一个与基板之间的晶格失配DELTA a / a（％）设定在-0.9％的范围内ΔTATA/ /=0.5%（参考符号a和ac表示半导体衬底的晶格常数和第一和第二包层中的至少任一个的晶格常数，并且DELTA a从DELTA a = ac-a获得）。

5. 发明授权

US6036772A Method for making semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US6036772A
公开(公告)日：2000-03-14
申请号：US999446
申请日：1997-12-29
申请人： Tomonori Hino , Satoshi Taniguchi , Satoshi Ito
发明人： Tomonori Hino , Satoshi Taniguchi , Satoshi Ito
IPC分类号： H01L21/363 , C30B25/18
CPC分类号： H01L21/02395 , H01L21/02463 , H01L21/02474 , H01L21/02477 , H01L21/02502 , H01L21/02557 , H01L21/0256 , H01L21/02576 , H01L21/02579 , H01L21/02631 , Y10S438/925 , Y10S438/944
摘要： A method for making a semiconductor device comprises: depositing at least one Group II-VI compound semiconductor layer comprising at least one Group II element selected from the group consisting of zinc, magnesium, manganese, beryllium, cadmium and mercury and at least one Group VI element selected from the group consisting of oxygen, sulfur, selenium and tellurium onto a Group III-V compound semiconductor layer comprising at least one Group III element selected from the group consisting of gallium, aluminum, boron and indium and at least one Group V element selected from the group consisting of nitrogen, phosphorus, arsenic, antimony and bismuth; whereinbefore depositing the Group II-VI compound semiconductor layer, a particle beam composed of at least one Group II element selected from the group consisting of zinc, magnesium, beryllium, cadmium and mercury is radiated onto the Group III-V compound semiconductor layer in a dose of 8.times.10.sup.-4 Torr.multidot.sec or more.
摘要翻译：一种制造半导体器件的方法包括：沉积至少一种包含至少一种选自锌，镁，锰，铍，镉和汞的II族元素的II-VI族化合物半导体层和至少一种VI族选自氧，硫，硒和碲的元素至III-V族化合物半导体层，该III-V族化合物半导体层包含至少一种选自镓，铝，硼和铟的III族元素和至少一种V族元素选自氮，磷，砷，锑和铋; 其中在沉积II-VI族化合物半导体层之前，将由选自锌，镁，铍，镉和汞的至少一种II族元素组成的粒子束辐射到III-V族化合物半导体层上剂量为8x10-4 Torrxsec或更高。

6. 发明授权

US06620641B2 Semiconductor light emitting device and its manufacturing method 失效
公开(公告)号：US06620641B2
公开(公告)日：2003-09-16
申请号：US10172839
申请日：2002-06-17
申请人： Takashi Yamaguchi , Toshimasa Kobayashi , Satoru Kijima , Takashi Kobayashi , Tsunenori Asatsuma , Takeharu Asano , Tomonori Hino
发明人： Takashi Yamaguchi , Toshimasa Kobayashi , Satoru Kijima , Takashi Kobayashi , Tsunenori Asatsuma , Takeharu Asano , Tomonori Hino
IPC分类号： H01L2100
CPC分类号： H01S5/32341 , H01S5/2081 , H01S5/209 , H01S5/2206 , H01S5/2231
摘要： A GaN compound semiconductor laser includes an AlGaN buried layer which buries opposite sides of a ridge stripe portion formed on a p-type AlGaN cladding layer. The AlGaN buried layer is made by first patterning an upper part of the p-type AlGaN cladding layer and a p-type GaN contact layer into a ridge stripe configuration by using a SiO2 film as an etching mask, then growing the AlGaN buried layer non-selectively on the entire substrate surface to bury both sides of the ridge stripe portion under the existence of the SiO2 film on the ridge stripe portion, and thereafter selectively removing the AlGaN buried layer from above the ridge stripe portion by etching using the SiO2 film as an etching stop layer. Thus, the GaN compound semiconductor laser is stabilized in the transverse mode, intensified in output power, and improved in lifetime.

7. 发明授权

US08680540B2 Optical semiconductor apparatus having a bidirectional communication system employing a single-core optical fiber 有权
标题翻译：具有采用单芯光纤的双向通信系统的光半导体装置
公开(公告)号：US08680540B2
公开(公告)日：2014-03-25
申请号：US11619352
申请日：2007-01-03
申请人： Hironobu Narui , Tomonori Hino , Nobukata Okano , Jugo Mitomo
发明人： Hironobu Narui , Tomonori Hino , Nobukata Okano , Jugo Mitomo
IPC分类号： H01L27/15 , H01L33/00
CPC分类号： H01L31/16 , B82Y20/00 , G02B6/4214 , G02B6/4246 , H01L31/173 , H01S5/02284 , H01S5/0262 , H01S5/0425 , H01S5/183 , H01S5/3432 , H01S2301/176
摘要： The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.
摘要翻译：光学半导体装置在n-GaAs衬底上包括表面发射半导体激光器件和集成在激光器周围的光电二极管，其间隔着隔离区域。激光装置由n-DBR反射镜，有源区和p-DBR反射镜组成，并且包括柱状分层结构，其侧壁被绝缘膜覆盖。光电二极管形成在基板上，并且具有圆形层状结构，其中i-GaAs层和p-GaAs层围绕激光器件，其间插入在i-GaAs和p-GaAs层之间的隔离区域和激光器件。光电二极管的直径小于与光半导体装置光耦合的光纤芯的直径。由于激光器件和光电二极管是单片集成的，所以器件不需要光学对准，因此便于与光纤的光耦合。

8. 发明申请

US20110212559A1 LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME, INTEGRATED LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME, METHOD FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, SUBSTRATE FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, LIGHT SOURCE CELL UNIT, LIGHT-EMITTING DIODE BACKLIGHT, LIGHT-EMITTING DIODE ILLUMINATING DEVICE, LIGHT-EMITTING DIODE DISPLAY AND ELECTRONIC INSTRUMENT, ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光二极管及其制造方法，集成发光二极管及其制造方法，用于生长基于氮化物的III-V族化合物半导体的方法，用于生长基于氮化物的III-V族化合物半导体的基板，光光源单元，发光二极管背光，发光二极管照明装置，发光二极管显示器和电子仪器，电子设备及其制造方法
公开(公告)号：US20110212559A1
公开(公告)日：2011-09-01
申请号：US13102404
申请日：2011-05-06
申请人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobutaka Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
发明人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobutaka Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
IPC分类号： H01L33/32
CPC分类号： H01L33/0025 , C30B23/04 , C30B25/04 , C30B29/403 , H01L21/02439 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L27/15 , H01L33/007 , H01L33/0079 , H01L33/08 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/46
摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.
摘要翻译：一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层第二导电类型的半导体层。

9. 发明授权

US07575946B2 Method for making compound semiconductor and method for making semiconductor device 失效
标题翻译：制备化合物半导体的方法和制造半导体器件的方法
公开(公告)号：US07575946B2
公开(公告)日：2009-08-18
申请号：US11079405
申请日：2005-03-14
申请人： Yasuo Sato , Tomonori Hino , Hironobu Narui
发明人： Yasuo Sato , Tomonori Hino , Hironobu Narui
IPC分类号： H01L21/00
CPC分类号： C30B25/18 , C30B29/40 , H01L21/02381 , H01L21/02395 , H01L21/02463 , H01L21/02505 , H01L21/0251 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L31/1035 , H01L31/1844 , H01L31/1852 , H01L33/0062 , Y02E10/544 , Y02P70/521
摘要： In a method for making a compound semiconductor including a substrate and a compound semiconductor layer having a lattice mismatch ratio of 2% or more relative to the substrate, the method includes a first epitaxial growth step of forming a buffer layer on the substrate, the buffer layer having a predetermined distribution of lattice mismatch ratios in the thickness direction so as to reduce strain; and a second epitaxial growth step of forming the compound semiconductor layer on the buffer layer. The first epitaxial growth step is carried out by metal organic chemical vapor deposition at a deposition temperature of 600° C. or less.
摘要翻译：在制造包括基板的化合物半导体和相对于基板的晶格失配比为2％以上的化合物半导体层的方法中，该方法包括在基板上形成缓冲层的第一外延生长步骤，缓冲层层在厚度方向上具有预定的晶格失配比分布，以便减小应变; 以及在缓冲层上形成化合物半导体层的第二外延生长步骤。第一外延生长步骤通过金属有机化学气相沉积在600℃或更低的沉积温度下进行。

10. 发明申请

US20050274962A1 Optical semiconductor apparatus 有权
标题翻译：光半导体装置
公开(公告)号：US20050274962A1
公开(公告)日：2005-12-15
申请号：US11192727
申请日：2005-07-29
申请人： Hironobu Narui , Tomonori Hino , Nobukata Okano , Jugo Mitomo
发明人： Hironobu Narui , Tomonori Hino , Nobukata Okano , Jugo Mitomo
IPC分类号： G02B6/42 , G01J1/32 , H01L29/16 , H01L29/267 , H01L31/12 , H01L31/173 , H01S5/183
CPC分类号： H01L31/16 , B82Y20/00 , G02B6/4214 , G02B6/4246 , H01L31/173 , H01S5/02284 , H01S5/0262 , H01S5/0425 , H01S5/183 , H01S5/3432 , H01S2301/176
摘要： The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.
摘要翻译：光学半导体装置在n-GaAs衬底上包括表面发射半导体激光器件和集成在激光器周围的光电二极管，其间隔着隔离区域。激光装置由n-DBR反射镜，有源区和p-DBR反射镜组成，并且包括柱状分层结构，其侧壁被绝缘膜覆盖。光电二极管形成在基板上，并且具有圆形层状结构，其中i-GaAs层和p-GaAs层围绕激光器件，其间插入在i-GaAs和p-GaAs层之间的隔离区域和激光器件。光电二极管的直径小于与光半导体装置光耦合的光纤芯的直径。由于激光器件和光电二极管是单片集成的，所以器件不需要光学对准，因此便于与光纤的光耦合。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式