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1. 发明授权

US5828086A Semiconductor light emitting device with a Mg superlattice structure 失效
标题翻译：具有Mg超晶格结构的半导体发光器件
公开(公告)号：US5828086A
公开(公告)日：1998-10-27
申请号：US826108
申请日：1997-03-24
申请人： Akira Ishibashi , Satoshi Matsumoto , Masaharu Nagai , Satoshi Ito , Shigetaka Tomiya , Kazushi Nakano , Etsuo Morita
发明人： Akira Ishibashi , Satoshi Matsumoto , Masaharu Nagai , Satoshi Ito , Shigetaka Tomiya , Kazushi Nakano , Etsuo Morita
IPC分类号： H01L33/06 , H01L33/28 , H01S5/30 , H01S5/32 , H01S5/347 , H01L33/00
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/06 , H01S5/347 , H01S2304/02 , H01S5/3059 , H01S5/3216
摘要： A semiconductor light emitting device ccomprises a first cladding layer, an active layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer and the second cladding layer has a superlattice structure comprising II-VI compound semiconductor. Another semiconductor light emitting device comprises a first cladding layer, a first guide layer, an active layer, a second guide layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer, the first guide layer, the second cladding layer and the second guide layer has a superlattice structure. Still anothr semiconductor light emitting device comprises a defect decomposing layer, a defect blocking layer, a first cladding layer, an active layer, a second cladding layer which are stacked on a semiconductor substrate. The defect decomposing layer and the defect blocking layer comprise a superlattice structure.
摘要翻译：半导体发光器件包括堆叠在半导体衬底上的第一覆层，有源层和第二覆层。第一包层和第二包层的至少一部分具有包含II-VI化合物半导体的超晶格结构。另一种半导体发光器件包括堆叠在半导体衬底上的第一覆层，第一引导层，有源层，第二引导层和第二覆层。第一包覆层，第一引导层，第二覆盖层和第二引导层的至少一部分具有超晶格结构。还有一种半导体发光器件包括堆叠在半导体衬底上的缺陷分解层，缺陷阻挡层，第一覆层，有源层，第二覆层。缺陷分解层和缺陷阻挡层包括超晶格结构。

2. 发明授权

US5665977A Semiconductor light emitting device with defect decomposing and blocking layers 失效
标题翻译：具有缺陷分解和阻挡层的半导体发光器件
公开(公告)号：US5665977A
公开(公告)日：1997-09-09
申请号：US691536
申请日：1996-08-02
申请人： Akira Ishibashi , Satoshi Matsumoto , Masaharu Nagai , Satoshi Ito , Shigetaka Tomiya , Kazushi Nakano , Etsuo Morita
发明人： Akira Ishibashi , Satoshi Matsumoto , Masaharu Nagai , Satoshi Ito , Shigetaka Tomiya , Kazushi Nakano , Etsuo Morita
IPC分类号： H01L33/06 , H01L33/28 , H01S5/30 , H01S5/32 , H01S5/347 , H01L33/00
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/06 , H01S5/347 , H01S2304/02 , H01S5/3059 , H01S5/3216
摘要： A semiconductor light emitting device comprises a first cladding layer, an active layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer and the second cladding layer has a superlattice structure comprising II-VI compound semiconductor. Another semiconductor light emitting device comprises a first cladding layer, a first guide layer, an active layer, a second guide layer and a second cladding layer which are stacked on semiconductor substrate. At least a part of the first cladding layer, the first guide layer, the second cladding layer and the second guide layer has a superlattice structure. Still another semiconductor light emitting device comprises a defect decomposing layer, a defect blocking layer, first cladding layer, an active layer, a second cladding layer which are stacked on a semiconductor substrate. The defect decomposing layer and the defect blocking layer comprise a superlattice structure.
摘要翻译：半导体发光器件包括堆叠在半导体衬底上的第一覆层，有源层和第二覆层。第一包层和第二包层的至少一部分具有包含II-VI化合物半导体的超晶格结构。另一半导体发光器件包括堆叠在半导体衬底上的第一覆层，第一引导层，有源层，第二引导层和第二覆层。第一包覆层，第一引导层，第二覆盖层和第二引导层的至少一部分具有超晶格结构。另一半导体发光器件包括堆叠在半导体衬底上的缺陷分解层，缺陷阻挡层，第一覆层，有源层，第二覆层。缺陷分解层和缺陷阻挡层包括超晶格结构。

3. 发明授权

US06456639B2 Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing the same, and optical device including same 失效
标题翻译：具有含有碱金属杂质的II-VI族半导体接触层的半导体发光器件及其制造方法以及包括其的光学器件
公开(公告)号：US06456639B2
公开(公告)日：2002-09-24
申请号：US09864758
申请日：2001-05-24
申请人： Akira Ishibashi , Yoshinori Hatanaka , Toru Aoki , Masaharu Nagai
发明人： Akira Ishibashi , Yoshinori Hatanaka , Toru Aoki , Masaharu Nagai
IPC分类号： H01S500
CPC分类号： H01L33/40 , H01L33/28 , H01L33/285
摘要： The invention provides a semiconductor light emitting device whose operating voltage can be easily reduced, a method of producing the same, and an optical device. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type clad layer, a first semiconductor layer, and a second semiconductor layer of ZnSe are successively grown on an n-type substrate. An alkali compound layer of Na2Se is then formed thereon. Subsequently, a heat treatment is performed by means of irradiation of an excimer laser beam so that at least a part of the second semiconductor layer and at least a part of the alkali compound layer are altered thereby forming a contact layer. Furthermore, a p-side electrode is formed on the contact layer. The contact layer contains an alkali metal serving as a p-type impurity so that the contact layer has a low electric resistance thereby achieving a reduction in the operating voltage and thus a reduction in the operating power. As a result of the reduction in the operating power, the device life is improved.
摘要翻译：本发明提供一种可以容易地降低其工作电压的半导体发光器件，其制造方法和光学器件。在n型衬底上依次生长n型覆盖层，第一引导层，有源层，第二引导层，p型覆盖层，第一半导体层和第二半导体层。然后在其上形成Na 2 Se的碱性化合物层。随后，通过照射准分子激光束进行热处理，使得第二半导体层和至少一部分碱性化合物层的至少一部分被改变，从而形成接触层。此外，在接触层上形成p侧电极。接触层含有用作p型杂质的碱金属，使得接触层具有低电阻，从而实现工作电压的降低，从而降低工作电力。由于操作功率的降低，设备寿命得到改善。

4. 发明授权

US06414975B1 Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing same, and optical device including same 失效
标题翻译：具有含有碱金属杂质的II-VI族半导体接触层的半导体发光器件及其制造方法以及包括其的光学器件
公开(公告)号：US06414975B1
公开(公告)日：2002-07-02
申请号：US09048048
申请日：1998-03-26
申请人： Akira Ishibashi , Yoshinori Hatanaka , Toru Aoki , Masaharu Nagai
发明人： Akira Ishibashi , Yoshinori Hatanaka , Toru Aoki , Masaharu Nagai
IPC分类号： H01S500
CPC分类号： H01L33/40 , H01L33/28 , H01L33/285
摘要： The invention provides a semiconductor light emitting device whose operating voltage can be easily reduced, a method of producing the same, and an optical device. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type clad layer, a first semiconductor layer, and a second semiconductor layer of ZnSe are successively grown on an n-type substrate. An alkali compound layer of Na2Se is then formed thereon. Subsequently, a heat treatment is performed by means of irradiation of an excimer laser beam so that at least a part of the second semiconductor layer and at least a part of the alkali compound layer are altered thereby forming a contact layer. Furthermore, a p-side electrode is formed on the contact layer. The contact layer contains an alkali metal serving as a p-type impurity so that the contact layer has a low electric resistance thereby achieving a reduction in the operating voltage and thus a reduction in the operating power. As a result of the reduction in the operating power, the device life is improved.
摘要翻译：本发明提供一种可以容易地降低其工作电压的半导体发光器件，其制造方法和光学器件。在n型衬底上依次生长n型覆盖层，第一引导层，有源层，第二引导层，p型覆盖层，第一半导体层和第二半导体层。然后在其上形成Na 2 Se的碱性化合物层。随后，通过照射准分子激光束进行热处理，使得第二半导体层的至少一部分和碱性化合物层的至少一部分被改变，从而形成接触层。此外，在接触层上形成p侧电极。接触层含有用作p型杂质的碱金属，使得接触层具有低电阻，从而实现工作电压的降低，从而降低工作电力。由于操作功率的降低，设备寿命得到改善。

5. 发明授权

US5865897A Method of producing film of nitrogen-doped II-VI group compound semiconductor 失效
标题翻译：氮掺杂II-VI族化合物半导体膜的制备方法
公开(公告)号：US5865897A
公开(公告)日：1999-02-02
申请号：US596384
申请日：1996-02-09
申请人： Satoshi Ito , Satoshi Taniguchi , Masao Ikeda , Hiroyuki Okuyama , Hironori Tsukamoto , Masaharu Nagai , Koshi Tamamura
发明人： Satoshi Ito , Satoshi Taniguchi , Masao Ikeda , Hiroyuki Okuyama , Hironori Tsukamoto , Masaharu Nagai , Koshi Tamamura
IPC分类号： C23C14/00 , C23C14/06 , C30B23/02 , H01L21/363 , H01L21/365 , H01L33/00 , H01L33/28 , H05H13/00
CPC分类号： H01L33/285 , C23C14/0026 , C23C14/0629 , C30B23/02 , C30B29/48 , H01L21/02395 , H01L21/02463 , H01L21/02474 , H01L21/02477 , H01L21/02551 , H01L21/0256 , H01L21/02579 , H01L21/02631 , H01L33/0087
摘要： A film of a II-VI group compound semiconductor of at least one of elements belonging to the II group of the periodic table and at least one of elements belonging to the VI group of the periodic table is deposited on a substrate. When the film is deposited on the substrate, a plasma of nitrogen in an excited state is applied to the substrate while removing charged particles from said plasma by a charged particle removing means. The deposited film of a nitrogen-doped II-VI group compound semiconductor has an increased percentage of activated nitrogen atoms and improved crystallinity.
摘要翻译： PCT No.PCT / JP95 / 00854 Sec。 371日期1996年2月9日 102（e）日期1996年2月9日PCT提交1995年4月28日PCT公布。公开号WO95 / 34093 日期1995年12月14日属于周期表II族的至少一种元素的II-VI族化合物半导体的膜和属于周期表的VI族的元素中的至少一种沉积在基板上。当膜沉积在衬底上时，将激发态的氮等离子体施加到衬底上，同时通过带电粒子去除装置从所述等离子体中除去带电粒子。氮掺杂的II-VI族化合物半导体的沉积膜具有增加的活性氮原子百分比和改善的结晶度。

6. 发明授权

US08044574B2 Display device and manufacturing method of display device 有权
标题翻译：显示装置及显示装置的制造方法
公开(公告)号：US08044574B2
公开(公告)日：2011-10-25
申请号：US12406223
申请日：2009-03-18
申请人： Shunpei Yamazaki , Masayuki Sakakura , Masaharu Nagai , Yutaka Matsuda , Kengo Akimoto , Gen Fujii , Tetsuji Yamaguchi
发明人： Shunpei Yamazaki , Masayuki Sakakura , Masaharu Nagai , Yutaka Matsuda , Kengo Akimoto , Gen Fujii , Tetsuji Yamaguchi
IPC分类号： H01L51/10
CPC分类号： H01L51/529 , H01L27/12 , H01L27/1214 , H01L27/3246 , H01L27/3248 , H01L27/3258 , H01L27/3276 , H01L29/66757 , H01L51/5206 , H01L51/5246 , H01L2251/5315 , H01L2251/5323
摘要： It is an object of the present invention to provide a reliable display device and a method for manufacturing the display device reducing the number of manufacturing steps, and with higher yield. A display device according to the invention includes a plurality of display elements each having a first electrode, a layer containing an organic compound, and a second electrode. The display device further includes a heat-resistant planarizing film over a substrate having an insulating surface, a first electrode over the heat-resistant planarizing film, a wiring covering an end portion of the first electrode, a partition wall covering the end portion of first electrode and the wiring, a layer containing an organic compound, and a second electrode over the layer containing an organic compound.
摘要翻译：本发明的目的是提供一种可靠的显示装置和用于制造显示装置的方法，其减少制造步骤的数量，并且以更高的产量。根据本发明的显示装置包括多个显示元件，每个显示元件具有第一电极，含有有机化合物的层和第二电极。显示装置还包括在具有绝缘表面的基板上的耐热平面化膜，耐热平面化膜上的第一电极，覆盖第一电极的端部的布线，覆盖第一电极的端部的分隔壁电极和布线，含有有机化合物的层，以及包含有机化合物的层上的第二电极。

7. 发明申请

US20110170084A1 LIGHT EXPOSURE MASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
标题翻译：光曝光掩模及使用其制造半导体器件的方法
公开(公告)号：US20110170084A1
公开(公告)日：2011-07-14
申请号：US13069491
申请日：2011-03-23
申请人： Hideto Ohnuma , Masaharu Nagai
发明人： Hideto Ohnuma , Masaharu Nagai
IPC分类号： G03B27/72
CPC分类号： H01L27/1288 , G03F1/50 , H01L27/1214 , H01L27/124 , H01L27/127 , H01L29/42384 , H01L29/66757 , H01L29/78621
摘要： The present invention provides a light exposure mask which can form a photoresist layer in a semi-transmissive portion with uniform thickness, and a method for manufacturing a semiconductor device in which the number of photolithography steps (the number of masks) necessary for manufacturing a TFT substrate is reduced by using the light exposure mask. A light exposure mask is used, which includes a transmissive portion, a light shielding portion, and a semi-transmissive portion having a light intensity reduction function where lines and spaces are repeatedly formed, wherein the sum of a line width L of a light shielding material and a space width S between light shielding materials in the semi-transmissive portion satisfies a conditional expression (2n/3)×m≦L+S≦(6n/5)×m when a resolution of a light exposure apparatus is represented by n and a projection magnification is represented by 1/m (m≧1).
摘要翻译：本发明提供一种能够在均匀厚度的半透射部分中形成光致抗蚀剂层的曝光掩模，以及制造半导体器件的方法，其中制造TFT所需的光刻步骤数（掩模数）通过使用曝光掩模来减少衬底。使用曝光掩模，其包括透射部分，遮光部分和具有重复形成线和间隔的光强降低功能的半透射部分，其中遮光层的线宽L之和材料和半透射部分的遮光材料之间的空间宽度S满足条件表达式（2n / 3）×m＆nlE; L + S＆nlE;（6n / 5）×m，当曝光装置的分辨率由 n，投影倍率由1 / m（m≥1）表示。

8. 发明授权

US07829432B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US07829432B2
公开(公告)日：2010-11-09
申请号：US12489594
申请日：2009-06-23
申请人： Hideto Ohnuma , Kenichiro Makino , Yoichi Iikubo , Masaharu Nagai , Aiko Shiga
发明人： Hideto Ohnuma , Kenichiro Makino , Yoichi Iikubo , Masaharu Nagai , Aiko Shiga
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/84 , H01L21/76254 , H01L29/66772 , H01L29/78621
摘要： To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconductor substrate side, a nitrogen-containing layer is provided on the base substrate side, and the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate are bonded to each other. Further, plasma treatment is performed on at least one of the oxide film and the nitrogen-containing layer before bonding the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate to each other. Plasma treatment can be performed in a state in which a bias voltage is applied.
摘要翻译：即使使用含有氮的绝缘膜作为接合层，为了提高接合强度并提高SOI基板的接合半导体基板和基板的可靠性，在半导体基板侧设置氧化膜，氮在基底基板侧设置含氧层，并且形成在半导体基板上的氧化膜和形成在基底基板上的含氮层彼此结合。此外，在将形成在半导体衬底上的氧化膜和形成在基底衬底上的含氮层彼此粘合之前，对氧化物膜和含氮层中的至少一种进行等离子体处理。可以在施加偏置电压的状态下进行等离子体处理。

9. 发明授权

US07816863B2 Light emitting device and method for manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07816863B2
公开(公告)日：2010-10-19
申请号：US10933507
申请日：2004-09-03
申请人： Shunpei Yamazaki , Junichiro Sakata , Takashi Hamada , Masaharu Nagai , Yutaka Matsuda
发明人： Shunpei Yamazaki , Junichiro Sakata , Takashi Hamada , Masaharu Nagai , Yutaka Matsuda
IPC分类号： H05B33/22
CPC分类号： H01L27/3258 , H01L21/31608 , H01L27/3246 , H01L27/3276 , H01L51/5206 , H01L51/5218 , H01L51/5246 , H01L51/5281 , H01L51/529 , H01L2251/5315 , H01L2251/5323
摘要： An object of the present invention is to realize a light emitting device having low power consumption and high stability, in addition to improve extraction efficiency of light generated in a light emitting element. At least an interlayer insulating film (including a planarizing film), an anode, and a bank covering an edge portion of the anode contain-chemically and physically stable silicon oxide, or are made of a material containing silicon oxide as its main component in order to accomplish a light emitting device having high stability. Generation of heat in a light emitting panel can be suppressed in addition to increase in efficiency (luminance/current) of a light emitting panel according to the structure of the present invention. Consequently, synergistic effect on reliability of a light emitting device is obtained.
摘要翻译：本发明的目的是提供一种具有低功耗和高稳定性的发光器件，同时提高了在发光元件中产生的光的提取效率。至少层间绝缘膜（包括平坦化膜），阳极和覆盖阳极的边缘部分的堤包含化学和物理稳定的氧化硅，或者由以氧化硅为主要成分的材料按顺序制成以实现具有高稳定性的发光器件。除了根据本发明的结构提高发光面板的效率（亮度/电流）之外，还可以抑制发光面板中的发热。因此，获得了对发光器件的可靠性的协同效应。

10. 发明授权

US07465593B2 Electronics device, semiconductor device, and method for manufacturing the same 有权
标题翻译：电子器件，半导体器件及其制造方法
公开(公告)号：US07465593B2
公开(公告)日：2008-12-16
申请号：US12007293
申请日：2008-01-09
申请人： Shunpei Yamazaki , Masaharu Nagai , Osamu Nakamura
发明人： Shunpei Yamazaki , Masaharu Nagai , Osamu Nakamura
IPC分类号： H01L21/00
CPC分类号： H01L27/3244 , G02F1/13454 , G02F1/136227 , H01L27/12 , H01L27/1214 , H01L27/1248 , H01L27/3246 , H01L27/3258 , H01L51/5246 , H01L51/529 , H01L2251/5323
摘要： It is an object of the present invention to provide a high reliable EL display device and a manufacturing method thereof by shielding intruding moisture or oxygen which is a factor of deteriorating the property of an EL element without enlarging the EL display device.In the invention, application is used as a method for forming a high thermostability planarizing film 16, typically, an interlayer insulating film (a film which serves as a base film of a light emitting element later) of a TFT in which a skeletal structure is configured by the combination of silicon (Si) and oxygen (O). After the formation, an edge portion or an opening portion is formed to have a tapered shape. Afterwards, distortion is given by adding an inert element with a comparatively large atomic radius to modify or highly densify a surface (including a side surface) for preventing the intrusion of moisture or oxygen.
摘要翻译：本发明的目的是提供一种高可靠性的EL显示装置及其制造方法，该EL显示装置及其制造方法通过屏蔽侵入的水分或氧气，这是使EL元件的特性劣化而不扩大EL显示装置的因素。在本发明中，作为用于形成高热稳定性平坦化膜16的方法，通常使用其中骨架结构是TFT的TFT层的绝缘膜（用作发光元件的基膜的膜）由硅（Si）和氧（O）的组合构成。在形成之后，形成具有锥形形状的边缘部分或开口部分。然后，通过添加具有较大原子半径的惰性元素来改变或高度致密化表面（包括侧表面）以防止水分或氧气的侵入而给出变形。

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