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1. 发明授权

US07706950B2 Controlling apparatus for continuously variable transmission 有权
标题翻译：无级变速器控制装置
公开(公告)号：US07706950B2
公开(公告)日：2010-04-27
申请号：US11551087
申请日：2006-10-19
申请人： Akira Hino , Takashi Yumoto , Naoya Inoue
发明人： Akira Hino , Takashi Yumoto , Naoya Inoue
IPC分类号： G06F7/00 , G06F17/00
CPC分类号： F16H61/66259 , F16H59/14 , F16H59/50 , F16H2059/145 , Y10T477/753
摘要： A continuously variable transmission 18 changes a speed-change ratio γ so that an actual rotation speed NIN of an input shaft 36 coincides with a target rotation speed NIN* set based on a target output P*. A target output calculating portion 156 calculates a first target drive force related value P1* based on both an acceleration required amount Acc and a load of an auxiliary machine AUX, calculates a second target drive force related value P2* based on the acceleration required amount without considering the auxiliary machine load, and sets the second drive force related value as the drive force related value P* upon a vehicle regular running. Even when the auxiliary machine load fluctuates in the vehicle regular running the target output does not fluctuate, and prevention of fluctuation of the target output rotation speed increases the drivability in the vehicle regular running.
摘要翻译：无级变速器18改变变速比γ，使得输入轴36的实际转速NIN与基于目标输出P *设定的目标转速NIN *一致。目标输出计算部分156基于加速要求量Acc和辅助机器AUX的负载来计算第一目标驱动力相关值P1 *，基于加速要求量计算第二目标驱动力相关值P2 *，而没有考虑辅助机器负载，并且在车辆正常行驶时将第二驱动力相关值设定为驱动力相关值P *。即使辅助机器负载在车辆正常运行中波动时，目标输出也不会波动，并且防止目标输出转速的波动增加了车辆正常行驶中的驾驶性能。

2. 发明授权

US06514174B2 Shift control system for automatic transmission 失效
公开(公告)号：US06514174B2
公开(公告)日：2003-02-04
申请号：US09920708
申请日：2001-08-02
申请人： Toshiji Iida , Tateki Jouzaki , Tatsuo Ochiai , Naoya Inoue , Akira Hino
发明人： Toshiji Iida , Tateki Jouzaki , Tatsuo Ochiai , Naoya Inoue , Akira Hino
IPC分类号： F16H6116
CPC分类号： F16H61/0213 , F16H59/24 , F16H59/44 , F16H61/66259 , F16H2061/6616 , F16H2061/6643 , Y10T477/619 , Y10T477/623 , Y10T477/644 , Y10T477/6934
摘要： A shift control system for an automatic transmission which has a gear ratio control means for controlling gear ratio of the automatic transmission comprises a lower limit setting device provided in said gear ratio control means and setting a lower limit for inhibiting a gear ratio from changing to a gear ratio of an upshift side; and a lower limit variable control means in which a lower limit of said gear ratio can be changed to a downshift side or to an upshift side by an operation of a driver.

3. 发明授权

US08275510B2 Failure determining device and failure determining method of continuously variable transmission 有权
标题翻译：无级变速器故障判定装置及故障判定方法
公开(公告)号：US08275510B2
公开(公告)日：2012-09-25
申请号：US12670470
申请日：2008-07-25
申请人： Naoto Tanaka , Shinya Toyoda , Naoya Inoue , Tadashi Tamura , Akira Hino , Yasunari Matsui
发明人： Naoto Tanaka , Shinya Toyoda , Naoya Inoue , Tadashi Tamura , Akira Hino , Yasunari Matsui
IPC分类号： G06F19/00
CPC分类号： F16H61/12 , F16H59/70 , F16H61/66259 , F16H61/66272 , F16H2061/1208 , F16H2061/1264 , Y10T477/387 , Y10T477/624 , Y10T477/62427
摘要： An ECU executes a program including the steps of determining that a change speed solenoid is abnormal when a target speed ratio falls within a predetermined range, an upshift is recognized and the change speed solenoid is abnormal; determining that the change speed solenoid is normal when the change speed solenoid is not abnormal; determining that a belt pinch pressure solenoid is abnormal when the target speed ratio is substantially equal to a speed ratio γmin on a maximum speed-increase side and the target speed ratio is not substantially equal to an actual speed ratio; and determining that the belt pinch pressure solenoid is normal when the target speed ratio is substantially equal to the actual speed ratio.
摘要翻译： ECU执行程序，包括当目标速度比落在预定范围内时确定变速螺线管异常的步骤，识别升档并且变速螺线管异常; 当变速电磁铁不是异常时，确定变速电磁铁正常; 当目标速度比基本上等于最大增速侧的速比γmin并且目标速比基本上不等于实际速比时，确定皮带夹紧压力螺线管是异常的; 并且当目标速度比基本上等于实际速比时，确定皮带夹紧压力螺线管是正常的。

4. 发明申请

US20100191407A1 FAILURE DETERMINING DEVICE AND FAILURE DETERMINING METHOD OF CONTINUOUSLY VARIABLE TRANSMISSION 有权
标题翻译：连续不变变速器的故障确定装置和故障确定方法
公开(公告)号：US20100191407A1
公开(公告)日：2010-07-29
申请号：US12670470
申请日：2008-07-25
申请人： Naoto Tanaka , Shinya Toyoda , Naoya Inoue , Tadashi Tamura , Akira Hino , Yasunari Matsui
发明人： Naoto Tanaka , Shinya Toyoda , Naoya Inoue , Tadashi Tamura , Akira Hino , Yasunari Matsui
IPC分类号： G06F19/00
CPC分类号： F16H61/12 , F16H59/70 , F16H61/66259 , F16H61/66272 , F16H2061/1208 , F16H2061/1264 , Y10T477/387 , Y10T477/624 , Y10T477/62427
摘要： An ECU executes a program including the steps of determining that a change speed solenoid is abnormal when a target speed ratio falls within a predetermined range, an upshift is recognized and the change speed solenoid is abnormal; determining that the change speed solenoid is normal when the change speed solenoid is not abnormal; determining that a belt pinch pressure solenoid is abnormal when the target speed ratio is substantially equal to a speed ratio γmin on a maximum speed-increase side and the target speed ratio is not substantially equal to an actual speed ratio; and determining that the belt pinch pressure solenoid is normal when the target speed ratio is substantially equal to the actual speed ratio.
摘要翻译： ECU执行程序，包括当目标速度比落在预定范围内时确定变速螺线管异常的步骤，识别升档并且变速螺线管异常; 当变速电磁铁不是异常时，确定变速电磁铁正常; 当目标速度比基本上等于最大增速侧的速比γmin并且目标速比基本上不等于实际速比时，确定皮带夹紧压力螺线管是异常的; 并且当目标速度比基本上等于实际速比时，确定皮带夹紧压力螺线管是正常的。

5. 发明授权

US08558334B2 Semiconductor device and method of manufacturing the semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08558334B2
公开(公告)日：2013-10-15
申请号：US13399475
申请日：2012-02-17
申请人： Makoto Ueki , Naoya Inoue , Yoshihiro Hayashi
发明人： Makoto Ueki , Naoya Inoue , Yoshihiro Hayashi
IPC分类号： H01L29/82 , H01L23/552 , H01L27/08 , H01L21/00
CPC分类号： H01L43/12 , H01L27/228 , H01L43/08
摘要： A semiconductor device in which MRAM is formed in a wiring layer A contained in a multilayered wiring layer, the MRAM having at least two first magnetization pinning layers in contact with a first wiring formed in a wiring layer and insulated from each other, a free magnetization layer overlapping the two first magnetization pinning layers in a plan view, and connected with the first magnetization pinning layers, a non-magnetic layer situated over the free magnetization layer, and a second magnetization pinning layer situated over the non-magnetic layer.
摘要翻译：一种半导体器件，其中MRAM形成在包含在多层布线层中的布线层A中，所述MRAM具有与形成在布线层中并彼此绝缘的第一布线接触的至少两个第一磁化闭塞层，自由磁化层在平面图中与两个第一磁化钉扎层重叠，并与第一磁化钉扎层，位于自由磁化层上方的非磁性层和位于非磁性层上的第二磁化钉扎层连接。

6. 发明授权

US08378341B2 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08378341B2
公开(公告)日：2013-02-19
申请号：US12654205
申请日：2009-12-14
申请人： Yoshihiro Hayashi , Naoya Inoue , Kishou Kaneko
发明人： Yoshihiro Hayashi , Naoya Inoue , Kishou Kaneko
IPC分类号： H01L29/18 , H01L21/00
CPC分类号： H01L21/76807 , H01L21/28282 , H01L21/76877 , H01L27/1225 , H01L27/124 , H01L29/24 , H01L29/242 , H01L29/41 , H01L29/42344 , H01L29/42352 , H01L29/4908 , H01L29/495 , H01L29/4966 , H01L29/518 , H01L29/66757 , H01L29/66969 , H01L29/78648 , H01L29/7869 , H01L29/792
摘要： A semiconductor device of the present invention has a first interconnect layer formed over the semiconductor substrate, and a semiconductor element; the first interconnect layer has an insulating layer, and a first interconnect filled in a surficial portion of the insulating layer; the semiconductor element has a semiconductor layer, a gate insulating film, and a gate electrode; the semiconductor layer is positioned over the first interconnect layer; the gate insulating film is positioned over or below semiconductor layer; and the gate electrode is positioned on the opposite side of the semiconductor layer while placing the gate insulating film in between.
摘要翻译：本发明的半导体器件具有形成在半导体衬底上的第一互连层和半导体元件; 所述第一互连层具有绝缘层，以及填充在所述绝缘层的表面部分中的第一互连层; 半导体元件具有半导体层，栅极绝缘膜和栅电极; 半导体层位于第一互连层上方; 栅绝缘膜位于半导体层之上或之下; 并且栅极电极位于半导体层的相反侧，同时将栅极绝缘膜放置在其间。

7. 发明授权

US07804085B2 Solid electrolyte switching element, and fabrication method of the solid electrolyte element, and integrated circuit 有权
标题翻译：固体电解质开关元件及固体电解质元件的制造方法及集成电路
公开(公告)号：US07804085B2
公开(公告)日：2010-09-28
申请号：US11814053
申请日：2006-01-16
申请人： Hiroshi Sunamura , Naoya Inoue , Toshitsugu Sakamoto , Hisao Kawaura
发明人： Hiroshi Sunamura , Naoya Inoue , Toshitsugu Sakamoto , Hisao Kawaura
IPC分类号： H01L47/00
CPC分类号： H01L45/1675 , H01L45/085 , H01L45/1206 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/1625
摘要： The switching element of the present invention is of a configuration that includes: a first electrode (14) and a second electrode (15) provided separated by a prescribed distance; a solid electrolyte layer (16) provided in contact with the first electrode (14) and the second electrode (15); a third electrode (18) that can supply metal ions and that is provided in contact with the solid electrolyte layer (16); and a metal diffusion prevention film (17) that covers points of the surface of the solid electrolyte layer (16) that are not in contact with the first electrode (14), the second electrode (15) or the third electrode (18). This configuration prevents the adverse effect of metal ions upon other elements.
摘要翻译：本发明的开关元件具有如下结构：第一电极（14）和第二电极（15），隔开规定的距离; 设置成与所述第一电极（14）和所述第二电极（15）接触的固体电解质层（16）。可以提供与固体电解质层（16）接触的金属离子的第三电极（18）; 以及覆盖与第一电极（14），第二电极（15）或第三电极（18）不接触的固体电解质层（16）的表面的点的金属扩散防止膜（17）。这种配置防止了金属离子对其它元素的不利影响。

8. 发明申请

US20060147683A1 Flux for soldering and circuit board 审中-公开
标题翻译：用于焊接和电路板的焊剂
公开(公告)号：US20060147683A1
公开(公告)日：2006-07-06
申请号：US11024739
申请日：2004-12-30
申请人： Kazuki Ikeda , Shunsuke Ishikawa , Takaaki Anada , Keigo Obata , Takao Takeuchi , Naoya Inoue
发明人： Kazuki Ikeda , Shunsuke Ishikawa , Takaaki Anada , Keigo Obata , Takao Takeuchi , Naoya Inoue
IPC分类号： B32B3/00 , C22B9/10
CPC分类号： H05K3/3489 , H05K3/244 , H05K2203/121 , Y10T428/24917
摘要： A flux contains resin having film forming ability, activator, solvent, and at least one complex selected from silver complex and copper complex. The flux is used when soldering is performed onto a circuit having electroless nickel plating or further having gold plating on the electroless nickel plating. Allowing a barrier layer of silver or copper to deposit on the surfaces of lands suppresses the diffusion of nickel into the melted solder alloy during soldering, and also prevents phosphorous concentration. This improves the bonding strength of soldering and suppresses the reduction deposition of silver and/or copper to portions other than circuit patterns.
摘要翻译：助熔剂含有具有成膜能力的树脂，活化剂，溶剂和至少一种选自银络合物和铜络合物的络合物。当在具有化学镀镍的电路上进行焊接或在化学镀镍上进一步具有镀金时，使用焊剂。允许银或铜的阻挡层沉积在焊盘的表面上，抑制镍在焊接期间向熔化的焊料合金中扩散，并且还防止磷浓度。这提高了焊接的接合强度，并且抑制了银和/或铜对除了电路图案之外的部分的还原沉积。

9. 发明授权

US06962547B2 Oil pressure control of transmission for vehicles 失效
标题翻译：车辆传动油压控制
公开(公告)号：US06962547B2
公开(公告)日：2005-11-08
申请号：US10674817
申请日：2003-10-01
申请人： Naoya Inoue , Tateki Jozaki , Masayoshi Nakasaki
发明人： Naoya Inoue , Tateki Jozaki , Masayoshi Nakasaki
IPC分类号： F16H3/58 , F16H61/00 , F16H61/02 , F16H61/04 , F16H61/662 , F16H31/00
CPC分类号： F16H61/0246 , F16H61/0021 , F16H61/66272 , F16H2061/0485 , F16H2061/0488 , F16H2312/02
摘要： An oil pressure control device, which changes a range of a vehicle transmission includes: a pressure adjusting device that engages or releases forward and reverse frictional-engagement devices by adjusting an oil pressure supply, a sensor that detects a range selected by a vehicle driver, and a controller that controls the clutch pressure adjusting device based on a signal from the sensor. When the stop range is selected after selecting the reverse (forward) range, a forward (reverse) range is selected. After supplying an initial oil pressure to the forward (reverse) frictional-engagement device, the pressure adjusting device is controlled so that the pressure decreases from the initial oil pressure to a predetermined oil pressure. Subsequently, the oil pressure is initially increased at a small increase rate from the predetermined oil pressure. After a predetermined time period has elapsed, the pressure adjusting device increases the oil pressure at a large increase rate.
摘要翻译：改变车辆变速器的范围的油压控制装置包括：压力调节装置，其通过调节油压供给而接合或释放正向和反向摩擦接合装置;检测由车辆驾驶员选择的范围的传感器; 以及基于来自传感器的信号来控制离合器压力调节装置的控制器。选择反向（正向）范围后选择停止范围时，选择正向（反向）范围。在向前（反向）摩擦接合装置供给初始油压之后，控制压力调节装置，使得压力从初始油压降低到预定的油压。随后，初始以预定的油压以小的增加速率增加油压。在经过预定时间之后，压力调节装置以大的增加率增加油压。

10. 发明授权

US06300212B1 Method of fabricating semiconductor device having memory capacitor including ferroelectric layer made of composite metal oxide 失效
标题翻译：制造具有由复合金属氧化物制成的铁电层的存储电容器的半导体器件的制造方法
公开(公告)号：US06300212B1
公开(公告)日：2001-10-09
申请号：US09124067
申请日：1998-07-29
申请人： Naoya Inoue , Yoshihiro Hayashi
发明人： Naoya Inoue , Yoshihiro Hayashi
IPC分类号： H01L2120
CPC分类号： C23C14/088 , H01L21/31691 , H01L28/55
摘要： In a method and an apparatus for manufacturing a semiconductor device which has a capacitor consisting of a layered structure of a lower electrode, a ferroelectric layer made of a composite metal oxide such as PZT and an upper electrode in a predetermined region on a semiconductor substrate, the lower electrode, the ferroelectric layer and the upper electrode are successively formed in an atmosphere isolated from the air. For the duration after forming the ferroelectric layer till starting the formation of the upper electrode, it is desirable to introduce a gas such as an inert gas or an inert gas with oxygen into the atmosphere in the vicinity of the substrate to keep the atmosphere within a predetermined pressure range.
摘要翻译：在半导体装置的制造方法和装置中，具有由下电极构成的电容器，由复合金属氧化物如PZT制成的铁电层和半导体基板上的预定区域中的上电极，下部电极，铁电层和上部电极依次形成在与空气隔离的气氛中。在形成铁电层直到开始形成上电极的持续时间之后，期望将惰性气体或惰性气体的气体与氧气引入到基板附近的气氛中，以将气氛保持在预定压力范围。

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