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1. 发明授权

US07700054B2 Substrate processing apparatus having gas side flow via gas inlet 有权
标题翻译：具有通过气体入口的气体侧流动的基板处理装置
公开(公告)号：US07700054B2
公开(公告)日：2010-04-20
申请号：US11987493
申请日：2007-11-30
申请人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Yukinori Aburatani , Tomoyuki Yamada , Seiyo Nakashima , Masashi Sugishita
发明人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Yukinori Aburatani , Tomoyuki Yamada , Seiyo Nakashima , Masashi Sugishita
IPC分类号： H01L21/00 , B01J19/00 , F27B5/14
CPC分类号： H01L21/67109 , F27B17/0025
摘要： An object of the present invention is to improve substrate processing efficiency. A substrate processing apparatus has a reaction tube that processes a substrate inside, and a heating apparatus disposed so as to surround an external periphery of the reaction tube, so that at least a gas inlet tube is disposed on a side surface in an area in which the substrate is processed inside the reaction tube, and the heating apparatus has a heat insulator that surrounds the reaction tube, an inlet opening formed in the shape of a groove in the heat insulator from the lower end of the heating apparatus so as to avoid the gas inlet tube, and a heating element disposed between the heat insulator and the reaction tube.
摘要翻译：本发明的目的是提高基板处理效率。基板处理装置具有处理内部的基板的反应管和设置成围绕反应管的外周的加热装置，使得至少一个气体入口管设置在其中的在反应管内加工基板，加热装置具有围绕反应管的绝热体，从加热装置的下端形成为绝热体的槽状的入口开口，以避免气体入口管和设置在隔热件和反应管之间的加热元件。

2. 发明申请

US20080153314A1 Substrate processing apparatus, method of manufacturing semiconductor device, and heating apparatus 有权
标题翻译：基板处理装置，半导体装置的制造方法以及加热装置
公开(公告)号：US20080153314A1
公开(公告)日：2008-06-26
申请号：US11987493
申请日：2007-11-30
申请人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Yukinori Aburatani , Tomoyuki Yamada , Sieyo Nakashima , Masashi Sugishita
发明人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Yukinori Aburatani , Tomoyuki Yamada , Sieyo Nakashima , Masashi Sugishita
IPC分类号： H01L21/00 , B01J19/00 , F27B5/14
CPC分类号： H01L21/67109 , F27B17/0025
摘要： An object of the present invention is to improve substrate processing efficiency. A substrate processing apparatus has a reaction tube that processes a substrate inside, and a heating apparatus disposed so as to surround an external periphery of the reaction tube, so that at least a gas inlet tube is disposed on a side surface in an area in which the substrate is processed inside the reaction tube, and the heating apparatus has a heat insulator that surrounds the reaction tube, an inlet opening formed in the shape of a groove in the heat insulator from the lower end of the heating apparatus so as to avoid the gas inlet tube, and a heating element disposed between the heat insulator and the reaction tube.
摘要翻译：本发明的目的是提高基板处理效率。基板处理装置具有处理内部的基板的反应管和设置成围绕反应管的外周的加热装置，使得至少一个气体入口管设置在其中的在反应管内加工基板，加热装置具有围绕反应管的绝热体，从加热装置的下端形成为绝热体的槽状的入口开口，以避免气体入口管和设置在隔热件和反应管之间的加热元件。

3. 外观设计

USD651990S1 Semiconductor manufacturing equipment 有权
公开(公告)号：USD651990S1
公开(公告)日：2012-01-10
申请号：US29371214
申请日：2010-11-29
申请人： Masakazu Shimada , Takashi Nogami , Satoshi Aizawa , Seiyo Nakashima , Tomoyuki Yamada , Shinobu Sugiura , Yukinori Aburatani , Mitsuhiro Nagata
设计人： Masakazu Shimada , Takashi Nogami , Satoshi Aizawa , Seiyo Nakashima , Tomoyuki Yamada , Shinobu Sugiura , Yukinori Aburatani , Mitsuhiro Nagata

4. 外观设计

USD652395S1 Semiconductor manufacturing equipment 有权
标题翻译：半导体制造设备
公开(公告)号：USD652395S1
公开(公告)日：2012-01-17
申请号：US29371213
申请日：2010-11-29
申请人： Masakazu Shimada , Takashi Nogami , Satoshi Aizawa , Seiyo Nakashima , Tomoyuki Yamada , Shinobu Sugiura , Yukinori Aburatani , Mitsuhiro Nagata
设计人： Masakazu Shimada , Takashi Nogami , Satoshi Aizawa , Seiyo Nakashima , Tomoyuki Yamada , Shinobu Sugiura , Yukinori Aburatani , Mitsuhiro Nagata

5. 发明申请

US20090191718A1 Substrate processing apparatus, method of manufacturing semiconductor device, and reaction vessel 有权
标题翻译：基板加工装置，半导体装置的制造方法以及反应容器
公开(公告)号：US20090191718A1
公开(公告)日：2009-07-30
申请号：US12382618
申请日：2009-03-19
申请人： Seiyo Nakashima , Yukinori Aburatani
发明人： Seiyo Nakashima , Yukinori Aburatani
IPC分类号： H01L21/283
CPC分类号： C23C16/345 , C23C16/44 , C23C16/4412 , C23C16/45502 , C23C16/45519 , C23C16/4584
摘要： A method of manufacturing a semiconductor device includes the steps of: conveying a plurality of substrates disposed in a direction perpendicular to a substrate processing surface into a processing chamber provided inside of a reaction tube, with an outer periphery surrounded by a heating device; and processing the substrates by introducing gas to a gas inlet tube provided on a side face of the reaction tube in a region for processing the substrates inside the reaction tube, so as to reach at least an outside of the heating device, and spouting the gas into the processing chamber from a slit-shaped gas spouting port disposed in a form so as to straddle at least a plurality of the substrates in a direction perpendicular to the substrate processing surface.
摘要翻译：一种制造半导体器件的方法包括以下步骤：将设置在与衬底处理表面垂直的方向上的多个衬底输送到设置在反应管内部的处理室中，其外周被加热装置包围; 并且通过在设置在反应管的侧面的气体导入管中的处理反应管内部的基板的区域中引入气体来处理基板，以至少到达加热装置的外部，并且喷射气体从形成为以与基板处理表面垂直的方向跨越至少多个基板的形式的狭缝状气体喷射口将其进入处理室。

6. 发明授权

US08420167B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08420167B2
公开(公告)日：2013-04-16
申请号：US12382618
申请日：2009-03-19
申请人： Seiyo Nakashima , Yukinori Aburatani
发明人： Seiyo Nakashima , Yukinori Aburatani
IPC分类号： C23C16/455
CPC分类号： C23C16/345 , C23C16/44 , C23C16/4412 , C23C16/45502 , C23C16/45519 , C23C16/4584
摘要： A method of manufacturing a semiconductor device includes the steps of: conveying a plurality of substrates disposed in a direction perpendicular to a substrate processing surface into a processing chamber provided inside of a reaction tube, with an outer periphery surrounded by a heating device; and processing the substrates by introducing gas to a gas inlet tube provided on a side face of the reaction tube in a region for processing the substrates inside the reaction tube, so as to reach at least an outside of the heating device, and spouting the gas into the processing chamber from a slit-shaped gas spouting port disposed in a form so as to straddle at least a plurality of the substrates in a direction perpendicular to the substrate processing surface.
摘要翻译：一种制造半导体器件的方法包括以下步骤：将设置在与衬底处理表面垂直的方向上的多个衬底输送到设置在反应管内部的处理室中，其外周被加热装置包围; 并且通过在设置在反应管的侧面的气体导入管中的处理反应管内部的基板的区域中引入气体来处理基板，以至少到达加热装置的外部，并且喷射气体从形成为以与基板处理表面垂直的方向跨越至少多个基板的形式的狭缝状气体喷射口将其进入处理室。

7. 发明授权

US08277161B2 Substrate processing apparatus and manufacturing method of a semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US08277161B2
公开(公告)日：2012-10-02
申请号：US12213679
申请日：2008-06-23
申请人： Yukinori Aburatani , Seiyo Nakashima
发明人： Yukinori Aburatani , Seiyo Nakashima
IPC分类号： H01L21/677
CPC分类号： H01L21/67742 , H01L21/67109 , H01L21/67766 , H01L21/67769
摘要： A substrate processing apparatus is equipped with a processing furnace for processing wafers, a loading port which is used for carrying a pod containing substrates into and out of a case, a pod transport mechanism for transporting the container at least from the entrance and exit place, and a top storage which is disposed above the processing furnace in such a manner that at least part of the top storage overlaps with the processing furnace in the direction of gravity.
摘要翻译：基板处理装置配备有用于处理晶片的处理炉，用于将包含基板的壳体运送到壳体中的装载口，至少从入口和出口处输送容器的荚输送机构，以及顶部储存器，其设置在处理炉上方，使得顶部储存器的至少一部分在重力方向上与处理炉重叠。

8. 发明申请

US20060075972A1 Substrate processing apparatus and substrate processing method 审中-公开
公开(公告)号：US20060075972A1
公开(公告)日：2006-04-13
申请号：US11258670
申请日：2005-10-25
申请人： Seiyo Nakashima , Michiko Nishiwaki , Yukinori Aburatani , Satoshi Okada , Eisuke Nishitani , Kazuhiro Nakagomi , Kazuhito Ikeda , Kazuhiro Shimeno , Gakuji Ohta , Katsuhisa Kasanami
发明人： Seiyo Nakashima , Michiko Nishiwaki , Yukinori Aburatani , Satoshi Okada , Eisuke Nishitani , Kazuhiro Nakagomi , Kazuhito Ikeda , Kazuhiro Shimeno , Gakuji Ohta , Katsuhisa Kasanami
IPC分类号： C23C16/00
CPC分类号： H01L21/68721 , C23C16/4584 , C23C16/46 , H01J2237/2005 , H01J2237/32 , H01L21/67109 , H01L21/68742 , H01L21/68785 , H01L21/68792
摘要： A substrate processing apparatus comprises a processing chamber; a susceptor on which a substrate to be processed is to be placed; and a heating unit disposed below the susceptor for heating the substrate to be processed placed on the susceptor. The susceptor and the heating unit are accommodated in the processing chamber, and in a state in which the susceptor and the heating unit are relatively rotated, the substrate to be processed is processed. At least the susceptor is lifted and lowered in the processing chamber, and a substrate to be processed lifting and lowering apparatus for lifting and lowering the substrate to be processed with respect to at least a portion of the susceptor is disposed in the processing chamber.

9. 发明申请

US20090003977A1 Substrate processing apparatus and manufacturing method of a semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US20090003977A1
公开(公告)日：2009-01-01
申请号：US12213679
申请日：2008-06-23
申请人： Yukinori Aburatani , Seiyo Nakashima
发明人： Yukinori Aburatani , Seiyo Nakashima
IPC分类号： H01L21/677
CPC分类号： H01L21/67742 , H01L21/67109 , H01L21/67766 , H01L21/67769
摘要： A substrate processing apparatus is equipped with a processing furnace for processing wafers, a loading port which is used for carrying a pod containing substrates into and out of a case, a pod transport mechanism for transporting the container at least from the entrance and exit place, and a top storage which is disposed above the processing furnace in such a manner that at least part of the top storage overlaps with the processing furnace in the direction of gravity.
摘要翻译：基板处理装置配备有用于处理晶片的处理炉，用于将包含基板的壳体运送到壳体中的装载口，至少从入口和出口处输送容器的荚输送机构，以及顶部储存器，其设置在处理炉上方，使得顶部储存器的至少一部分在重力方向上与处理炉重叠。

10. 发明申请

US20080173238A1 Substrate processing apparatus, method of manufacturing semiconductor device, and reaction vessel 审中-公开
标题翻译：基板加工装置，半导体装置的制造方法以及反应容器
公开(公告)号：US20080173238A1
公开(公告)日：2008-07-24
申请号：US11987891
申请日：2007-12-05
申请人： Seiyo Nakashima , Yukinori Aburatani
发明人： Seiyo Nakashima , Yukinori Aburatani
IPC分类号： C23C16/513 , H01L21/283 , C23C16/44
CPC分类号： C23C16/345 , C23C16/44 , C23C16/4412 , C23C16/45502 , C23C16/45519 , C23C16/4584
摘要： A substrate processing apparatus that affords improved uniformity to in-plane wafer and interwafer film thickness of a large number of wafers on which a film is simultaneously formed, having: a reaction tube having in an interior thereof a processing chamber in which a plurality of substrates disposed in a direction perpendicular to a substrate processing surface can be processed; and a heating device provided to surround an outer circumference of the reaction tube, a gas inlet tube being provided on a side face of the reaction tube in a region for processing a substrate inside the reaction tube, so as to reach at least an outside of the heating device; and a gas spouting port being disposed in this gas inlet tube in a slit form so as to straddle at least a plurality of the substrates in a direction perpendicular to the substrate processing surface, for spouting gas from the gas inlet tube into the processing chamber.
摘要翻译：一种基板处理装置，其对同时形成膜的大量晶片提供了对面内晶片的改进的均匀性和间隔膜厚度，其具有：反应管，其内部具有处理室，其中多个基板可以处理沿垂直于基板处理表面的方向布置; 以及加热装置，其设置成围绕反应管的外周;气体导入管，设置在反应管的侧面上，用于处理反应管内的基板的区域，以至少到达加热装置; 并且气体喷射口以狭缝形式设置在该气体入口管中，以便沿垂直于基板处理表面的方向跨越至少多个基板，用于将气体从气体入口管喷射到处理室中。

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