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    • 10. 发明授权
    • Method and apparatus for detecting defects
    • 检测缺陷的方法和装置
    • US07643139B2
    • 2010-01-05
    • US11206209
    • 2005-08-18
    • Yoshimasa OhshimaMinori NoguchiHiroyuki Nakano
    • Yoshimasa OhshimaMinori NoguchiHiroyuki Nakano
    • G01N21/00
    • G01N21/9505G01N21/47G01N21/94G01N21/9501
    • An inspection apparatus projects a laser beam on the surface of a SOI wafer and detects foreign matter on and defects in the surface of the SOI wafer by receiving scattered light reflected from the surface of the SOI wafer. The wavelength of the laser beam used by the inspection apparatus is determined so that a penetration depth of the laser beam in a Si thin film may be 10 nm or below to detect only foreign matter on and defects in the outermost surface and not to detect foreign matter and defects in a BOX layer. Only the foreign matter on and defects in the outermost surface layer can be detected without being influenced by thin-film interference by projecting the laser beam on the surface of the SOI wafer and receiving scattered light rays.
    • 检查装置将激光束投射在SOI晶片的表面上,通过接收从SOI晶片的表面反射的散射光来检测SOI晶片的异物和表面的缺陷。 确定检查装置使用的激光束的波长,使得Si薄膜中的激光束的穿透深度可以为10nm以下,仅检测异物和最外表面的缺陷,并且不检测外部 BOX层的物质和缺陷。 只有通过将激光束投射在SOI晶片的表面上并且接收散射光线,才能够检测出最外层的异物和缺陷,而不受薄膜干涉的影响。