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1. 发明授权

US07052790B2 Fuel cell system and operation method having a condensed water tank open to atmosphere 有权
标题翻译：燃料电池系统和操作方法，具有向大气开放的冷凝水箱
公开(公告)号：US07052790B2
公开(公告)日：2006-05-30
申请号：US10169489
申请日：2001-10-18
申请人： Akinari Nakamura , Tatsuo Nakayama , Tetsuya Ueda , Masataka Ozeki
发明人： Akinari Nakamura , Tatsuo Nakayama , Tetsuya Ueda , Masataka Ozeki
IPC分类号： H01M8/04
CPC分类号： H01M8/04164 , H01M8/04029 , H01M8/04044 , H01M8/04052 , H01M8/0606 , H01M2250/405 , Y02B90/16
摘要： To avoid pressure variation in a cooling water channel, extend a life of an ion exchange resin used to maintain quality of cooling water and reduce power consumption by auxiliary machinery at low cost. There is provided a polymer electrolyte fuel cell, a cooling water tank, a cooling water channel, a cooling water pump, a heat exchanger, a fuel-side condenser and an oxidizer-side condenser that cool exhaust fuel gas and exhaust oxidizer gas discharged from the fuel cell to condense content water vapor, a condensed water tank that stores the water condensed in the fuel-side condenser and the oxidizer-side condenser, a water supply channel having a water supply pump for feeding the condensed water to the cooling water tank, and a water discharge channel for the cooling water tank.
摘要翻译：为了避免冷却水通道中的压力变化，延长用于保持冷却水质量的离子交换树脂的寿命，并以低成本降低辅助机械的功耗。提供冷却排出燃料气体和排出氧化剂气体的聚合物电解质燃料电池，冷却水箱，冷却水通道，冷却水泵，热交换器，燃料侧冷凝器和氧化剂侧冷凝器所述燃料电池用于冷凝内容物水蒸汽，所述冷凝水箱存储在所述燃料侧冷凝器和所述氧化剂侧冷凝器中冷凝的水，供水通道，具有供水泵，用于将冷凝水供给到所述冷却水箱和用于冷却水箱的排水通道。

2. 发明授权

US08716835B2 Bipolar transistor 有权
标题翻译：双极晶体管
公开(公告)号：US08716835B2
公开(公告)日：2014-05-06
申请号：US13124873
申请日：2009-10-16
申请人： Yuji Ando , Hironobu Miyamoto , Tatsuo Nakayama , Yasuhiro Okamoto , Takashi Inoue , Kazuki Ota
发明人： Yuji Ando , Hironobu Miyamoto , Tatsuo Nakayama , Yasuhiro Okamoto , Takashi Inoue , Kazuki Ota
IPC分类号： H01L29/66 , H01L29/737 , H01L29/20
CPC分类号： H01L29/7371 , H01L29/0649 , H01L29/0817 , H01L29/0821 , H01L29/2003 , H01L29/205 , H01L29/475 , H01L29/66318
摘要： A bipolar transistor is provided with an emitter layer, a base layer and a collector layer. The emitter layer is formed above a substrate and is an n-type conductive layer including a first nitride semiconductor. The base layer is formed on the emitter layer and is a p-type conductive including a second nitride semiconductor. The collector layer is formed on the base layer and includes a third nitride semiconductor. The collector layer, the base layer and the emitter layer are formed such that a crystal growth direction to the substrate surface is parallel to a substrate direction of [000-1]. The third nitride semiconductor contains InycAlxcGa1-xc-ycN (0•xc•1, 0•yc•1, 0
摘要翻译：双极晶体管设置有发射极层，基极层和集电极层。发射极层形成在衬底之上，并且是包括第一氮化物半导体的n型导电层。基极层形成在发射极层上，是包含第二氮化物半导体的p型导体。集电极层形成在基极层上并且包括第三氮化物半导体。形成集电体层，基极层和发射极层，使得到基板表面的晶体生长方向平行于[000-1]的基板方向。第三氮化物半导体含有InycAlxcGa1-xc-ycN（0·xc·1,0,0·yc·1,0,0cc·yc·1）。第三氮化物半导体中的表面侧的a轴长度比基板侧的a轴长短。

3. 发明授权

US08716755B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08716755B2
公开(公告)日：2014-05-06
申请号：US13553759
申请日：2012-07-19
申请人： Takashi Inoue , Tatsuo Nakayama , Yasuhiro Okamoto , Hironobu Miyamoto
发明人： Takashi Inoue , Tatsuo Nakayama , Yasuhiro Okamoto , Hironobu Miyamoto
IPC分类号： H01L29/66
CPC分类号： H01L29/778 , H01L21/02458 , H01L21/0254 , H01L29/2003 , H01L29/205 , H01L29/4236 , H01L29/432 , H01L29/517 , H01L29/66431 , H01L29/66462 , H01L29/7783
摘要： Compression strains are generated at an interface between the cap layer and the barrier layer and an interface between the channel layer and the buffer layer and a tensile strain is generated at an interface between the barrier layer and the channel layer. Therefore, negative charge is higher than positive charge at the interface between the cap layer and the barrier layer and the interface between the channel layer and the buffer layer, while positive charge is higher than negative charge at the interface between the barrier layer and the channel. The channel layer has a stacked layer structure of a first layer, a second layer, and a third layer. The second layer has a higher electron affinity than those of the first layer and the third layer.
摘要翻译：在帽层和阻挡层之间的界面处产生压缩应变，并且在沟道层和缓冲层之间的界面处产生压缩应变，并且在阻挡层和沟道层之间的界面处产生拉伸应变。因此，负电荷高于帽层和阻挡层之间的界面处的正电荷以及沟道层与缓冲层之间的界面，而正电荷高于阻挡层和沟道之间的界面处的负电荷。沟道层具有第一层，第二层和第三层的堆叠层结构。第二层比第一层和第三层具有更高的电子亲和力。

4. 发明授权

US08674407B2 Semiconductor device using a group III nitride-based semiconductor 有权
标题翻译：使用III族氮化物基半导体的半导体器件
公开(公告)号：US08674407B2
公开(公告)日：2014-03-18
申请号：US12919640
申请日：2009-03-12
申请人： Yuji Ando , Yasuhiro Okamoto , Kazuki Ota , Takashi Inoue , Tatsuo Nakayama , Hironobu Miyamoto
发明人： Yuji Ando , Yasuhiro Okamoto , Kazuki Ota , Takashi Inoue , Tatsuo Nakayama , Hironobu Miyamoto
IPC分类号： H01L29/66
CPC分类号： H01L29/7783 , H01L29/2003 , H01L29/4236 , H01L29/518 , H01L29/7785
摘要： The present invention provides a semiconductor device having such a structure formed by sequentially laminating a lower barrier layer composed of lattice-relaxed AlxGa1-xN (0≦x≦1), a channel layer composed of InyGa1-yN (0≦y≦1) with compressive strain and a contact layer composed of AlzGa1-zN (0≦z≦1), wherein a two-dimensional electron gas is produced in the vicinity of an interface of said InyGa1-yN channel layer with said AlzGa1-zN contact layer; a gate electrode is formed so as to be embedded in the recessed portion with intervention of an insulating film, which recessed portion is formed by removing a part of said AlzGa1-zN contact layer by etching it away until said InyGa1-yN channel layer is exposed; and, ohmic electrodes are formed on the AlzGa1-zN contact layer. Thus, the semiconductor device has superior uniformity and reproducibility of the threshold voltage while maintaining a low gate leakage current, and is also applicable to the enhancement mode type.
摘要翻译：本发明提供一种具有这样的结构的半导体器件，该半导体器件通过依次层叠由晶格弛豫的Al x Ga 1-x N（0 @ x @ 1）构成的下阻挡层，由InyGa1-yN（0 @ y @ 1）具有压应变和由Al z Ga 1-z N（0 @ z @ 1）组成的接触层，其中在所述In y Ga 1-y N沟道层与所述Al z Ga 1-z N接触层的界面附近产生二维电子气; 通过介入绝缘膜形成嵌入在凹陷部分中的栅电极，该凹陷部分通过蚀刻除去所述AlzGa1-zN接触层的一部分而形成，直到所述In y Ga 1-y N沟道层暴露 ; 并且在AlzGa1-zN接触层上形成欧姆电极。因此，半导体器件在保持低栅极漏电流的同时具有优异的阈值电压的均匀性和再现性，并且也适用于增强型。

5. 发明授权

US08525229B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08525229B2
公开(公告)日：2013-09-03
申请号：US12299542
申请日：2007-05-07
申请人： Yasuhiro Okamoto , Yuji Ando , Takashi Inoue , Tatsuo Nakayama , Hironobu Miyamoto
发明人： Yasuhiro Okamoto , Yuji Ando , Takashi Inoue , Tatsuo Nakayama , Hironobu Miyamoto
IPC分类号： H01L29/205 , H01L29/778
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/42316
摘要： A semiconductor device includes a channel layer, an electron-supplying layer provided on the channel layer, a cap layer provided on the electron-supplying layer and creating lattice match with the channel layer, and ohmic electrodes provided on the cap layer. The cap layer has a composition of (InyAl1-y)zGa1-zN (0≦y≦1, 0≦z≦1). The z for such cap layer monotonically decreases as being farther away from the electron-supplying layer.
摘要翻译：半导体器件包括沟道层，设置在沟道层上的电子供给层，设置在电子供给层上并与沟道层形成晶格匹配的盖层以及设置在盖层上的欧姆电极。盖层具有（In y Al 1-y）z Ga 1-z N（0 @ y @ 1，0 @ z @ 1）的组成。这种盖层的z随着远离电子供应层而单调减小。

6. 发明申请

US20110241075A1 BIPOLAR TRANSISTOR 有权
标题翻译：双极晶体管
公开(公告)号：US20110241075A1
公开(公告)日：2011-10-06
申请号：US13124872
申请日：2009-10-16
申请人： Yuji Ando , Hironobu Miyamoto , Tatsuo Nakayama , Yasuhiro Okamoto , Takashi Inoue , Kazuki Ota
发明人： Yuji Ando , Hironobu Miyamoto , Tatsuo Nakayama , Yasuhiro Okamoto , Takashi Inoue , Kazuki Ota
IPC分类号： H01L29/737
CPC分类号： H01L29/7371 , H01L29/045 , H01L29/2003
摘要： A bipolar transistor includes: a substrate; a collector and a base layer with a p-conductive-type, an emitter layer with an n-conductive-type. The collector layer is formed above the substrate and includes a first nitride semiconductor. The base layer with the p-conductive-type is formed on the collector layer and includes a second nit ride semiconductor. The emitter layer with the n-conductive-type is formed on the base layer and includes a third nitride semiconductor. The collector layer, the base layer and the emitter layer are formed so that crystal growing directions with respect to a surface of the substrate are in parallel to a [0001] direction of the substrate. The first nitride semiconductor includes: InycAlxcGa1-xc-ycN (0≦xc≦1, 0≦yc≦1, 0
摘要翻译：双极晶体管包括：基板; 具有p导电型的集电极和基极层，具有n导电型的发射极层。集电极层形成在衬底上方并且包括第一氮化物半导体。具有p型导电型的基底层形成在集电极层上，并且包括第二耐磨半导体。具有n导电型的发射极层形成在基极层上并且包括第三氮化物半导体。形成集电体层，基极层和发射极层，使得相对于基板的表面的晶体生长方向与基板的[0001]方向平行。第一氮化物半导体包括：InycAlxcGa1-xc-ycN（0＆nlE; xc＆nlE; 1,0＆amp; nlE; yc＆nlE; 1,0

7. 发明授权

US07256432B2 Field-effect transistor 失效
标题翻译：场效应晶体管
公开(公告)号：US07256432B2
公开(公告)日：2007-08-14
申请号：US10541583
申请日：2003-12-15
申请人： Yasuhiro Okamoto , Hironobu Miyamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Masaaki Kuzuhara
发明人： Yasuhiro Okamoto , Hironobu Miyamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Masaaki Kuzuhara
IPC分类号： H01L29/205 , H01L29/78
CPC分类号： H01L29/402 , H01L29/2003 , H01L29/7787
摘要： An electric-field control electrode (5) is formed between a gate electrode (2) and a drain electrode (3). A multilayered film including a SiN film (21) and a SiO2 film (22) is formed below the electric-field control electrode (5). The SiN film (21) is formed so that a surface of an AlGaN electron supply layer (13) is covered with the SiN film (21).
摘要翻译：在栅电极（2）和漏电极（3）之间形成电场控制电极（5）。在电场控制电极（5）的下方形成包括SiN膜（21）和SiO 2膜（22）的多层膜。形成SiN膜（21），使得AlGaN电子供给层（13）的表面被SiN膜（21）覆盖。

8. 发明申请

US20070164305A1 Ohmic electrode structure of nitride semiconductor device 失效
标题翻译：氮化物半导体器件的欧姆电极结构
公开(公告)号：US20070164305A1
公开(公告)日：2007-07-19
申请号：US10590730
申请日：2005-02-28
申请人： Tatsuo Nakayama , Yuji Ando , Hironobu Miyamoto , Masaaki Kuzuhara , Yasuhiro Okamoto , Takashi Inoue , Koji Hataya
发明人： Tatsuo Nakayama , Yuji Ando , Hironobu Miyamoto , Masaaki Kuzuhara , Yasuhiro Okamoto , Takashi Inoue , Koji Hataya
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32
摘要： An ohmic electrode structure of a nitride semiconductor device having a nitride semiconductor. The ohmic electrode structure is provided with a first metal film formed on the nitride semiconductor and a second metal film formed on the first metal film. The first metal film is composed of at least one material selected from a group consisting of V, Mo, Ti, Nb, W, Fe, Hf, Re, Ta and Zr. The second metal film is composed of at least one material different from that of the first metal film (102), selected from a group consisting of V, Mo, Ti, Nb, W, Fe, Hf, Re, Ta, Zr, Pt and Au.
摘要翻译：具有氮化物半导体的氮化物半导体器件的欧姆电极结构。欧姆电极结构设置有形成在氮化物半导体上的第一金属膜和形成在第一金属膜上的第二金属膜。第一金属膜由选自V，Mo，Ti，Nb，W，Fe，Hf，Re，Ta和Zr中的至少一种材料构成。第二金属膜由与V，Mo，Ti，Nb，W，Fe，Hf，Re，Ta，Zr，Pt中的至少一种不同于第一金属膜（102）的材料构成。和Au。

9. 发明申请

US20060102929A1 Field-effect transistor 失效
标题翻译：场效应晶体管
公开(公告)号：US20060102929A1
公开(公告)日：2006-05-18
申请号：US10538739
申请日：2003-12-15
申请人： Yasuhiro Okamoto , Hironobu Miyamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Massaki Kuzuhara
发明人： Yasuhiro Okamoto , Hironobu Miyamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Massaki Kuzuhara
IPC分类号： H01L31/109
CPC分类号： H01L29/402 , H01L29/2003 , H01L29/42316 , H01L29/7787
摘要： A field plate portion (5) overhanging a drain side in a visored shape is formed in a gate electrode (2). A multilayered film including a SiN film (21) and a SiO2 film (22) is formed beneath the field plate portion (5). The SiN film (21) is formed so that a surface of an AlGaN electron supply layer (13) is covered therewith.
摘要翻译：在栅电极（2）中形成有以遮挡形状突出于漏极侧的场板部（5）。在场板部分（5）的下方形成包括SiN膜（21）和SiO 2膜（22）的多层膜。形成SiN膜（21），使得AlGaN电子供给层（13）的表面被覆盖。

10. 发明申请

US20050151255A1 Semiconductor device having schottky junction electrode 失效
标题翻译：具有肖特基结电极的半导体器件
公开(公告)号：US20050151255A1
公开(公告)日：2005-07-14
申请号：US10518602
申请日：2003-06-17
申请人： Yuji Ando , Hironobu Miyamoto , Yasuhiro Okamoto , Kensuke Kasahara , Tatsuo Nakayama , Masaaki Kuzuhara
发明人： Yuji Ando , Hironobu Miyamoto , Yasuhiro Okamoto , Kensuke Kasahara , Tatsuo Nakayama , Masaaki Kuzuhara
IPC分类号： H01L29/872 , H01L21/338 , H01L29/20 , H01L29/423 , H01L29/47 , H01L29/778 , H01L29/812 , H01L31/0328
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/475 , H01L29/7781 , H01L29/812
摘要： A GaN semiconductor device with improved heat resistance of the Schottky junction electrode and excellent power performance and reliability is provided. In this semiconductor device having a Schottky gate electrode 17 which is in contact with an AlGaN electron supplying layer 14, a gate electrode 17 comprises a laminated structure wherein a first metal layer 171 formed of any of Ni, Pt and Pd, a second metal layer 172 formed of any of Mo, Pt, W, Ti, Ta, MoSi, PtSi, WSi, TiSi, TaSi, MoN, WN, TiN and TaN, and a third metal layer formed of any of Au, Cu, Al and Pt. Since the second metal layer comprises a metal material having a high melting point, it works as a barrier to the interdiffusion between the first metal layer and the third metal layer, and the deterioration of the gate characteristics caused by high temperature operation is suppressed. Since the first metal layer contacting the AlGaN electron supplying layer 14 has a high work function, the Schottky barrier is high, and superior Schottky contact is obtained.
摘要翻译：提供了具有肖特基接合电极的耐热性改善并且具有优异的功率性能和可靠性的GaN半导体器件。在具有与AlGaN电子供给层14接触的肖特基栅电极17的该半导体器件中，栅电极17包括层叠结构，其中由Ni，Pt和Pd中的任一种形成的第一金属层171，第二金属层由Mo，Pt，W，Ti，Ta，MoSi，PtSi，WSi，TiSi，TaSi，MoN，WN，TiN和TaN中的任一种形成的第一金属层，以及由Au，Cu，Al和Pt中的任一种形成的第三金属层。由于第二金属层包括具有高熔点的金属材料，所以它作为第一金属层和第三金属层之间的相互扩散的障碍，并且抑制了由高温操作引起的栅极特性的劣化。由于与AlGaN电子供给层14接触的第一金属层具有高功函数，所以肖特基势垒高，得到优异的肖特基接触。

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