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    • 2. 发明授权
    • Pressure sensor and manufacturing method thereof
    • 压力传感器及其制造方法
    • US06860154B2
    • 2005-03-01
    • US10047627
    • 2002-01-14
    • Satoshi YamamotoOsamu NakaoHitoshi NishimuraMasahiro Sato
    • Satoshi YamamotoOsamu NakaoHitoshi NishimuraMasahiro Sato
    • G01L1/14G01L9/00G01L9/12G01L7/08G01L9/16
    • G01L9/0073G01L1/148
    • It is an object of the present invention to provide a touch mode capacitive pressure sensor having higher pressure durability than conventional sensors. In this invention, a touch mode capacitive pressure sensor has a diaphragm made from boron-doped silicon, and the boron concentration at the top face of the diaphragm is equal to or greater than 1×1019 cm−3 and less than 9×1019 cm−3. Further, in this invention, a touch mode capacitive pressure sensor has a conductive diaphragm made by doping of an impurity and anisotropic etching, and the etch pit density on the top face of the diaphragm is equal to or less than five per μm2, and preferably equal to or less than one per μm2. As a result, the pressure durability of the diaphragm is greatly improved.
    • 本发明的目的是提供一种具有比常规传感器更高的耐压耐久性的触摸模式电容式压力传感器。 在本发明中,触摸模式电容式压力传感器具有由硼掺杂硅制成的光阑,并且隔膜顶面的硼浓度等于或大于1×10 19 cm -3且小于9×10 9 <19>厘米-3。 此外,在本发明中,触摸模式电容式压力传感器具有通过掺杂杂质和各向异性蚀刻而形成的导电隔膜,并且隔膜顶面上的蚀刻坑密度等于或小于每mum 2的5个/ ,并且优选等于或小于每个m.2的一个。 结果,隔膜的耐久性大大提高。