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1. 发明授权

US08525410B2 Short arc type discharge lamp 有权
标题翻译：短弧型放电灯
公开(公告)号：US08525410B2
公开(公告)日：2013-09-03
申请号：US13173074
申请日：2011-06-30
申请人： Mitsuru Ikeuchi , Akihiro Shimizu , Tomoyoshi Arimoto
发明人： Mitsuru Ikeuchi , Akihiro Shimizu , Tomoyoshi Arimoto
IPC分类号： H01J61/06
CPC分类号： H01J61/0732 , H01J61/0737 , H01J61/86
摘要： A short arc type discharge lamp wherein a cathode and an anode are arranged opposite to each other in an interior of a light emitting tube and said cathode comprises a main part made from tungsten and a tip end part made from thoriated tungsten, wherein thorium oxide particles having been peripherally coated with thorium are contained in the tip end part of said cathode.
摘要翻译：一种短弧型放电灯，其中阴极和阳极在发光管的内部彼此相对布置，并且所述阴极包括由钨制成的主要部分和由钍钨制成的尖端部分，其中氧化钍粒子被外周涂覆有钍的物质包含在所述阴极的末端部分中。

2. 发明授权

US08497632B2 Short arc type discharge lamp 有权
标题翻译：短弧型放电灯
公开(公告)号：US08497632B2
公开(公告)日：2013-07-30
申请号：US13348301
申请日：2012-01-11
申请人： Tomoyoshi Arimoto , Akihiro Shimizu , Mitsuru Ikeuchi
发明人： Tomoyoshi Arimoto , Akihiro Shimizu , Mitsuru Ikeuchi
IPC分类号： H01J61/04
CPC分类号： H01J61/0732 , H01J61/0735 , H01J61/86
摘要： A short arc type discharge lamp includes a cathode and an anode arranged inside an arc tube to face each other. The cathode comprises a main body portion made of tungsten and an emitter portion made of thoriated tungsten that is joined at the tip of the main body portion, where a metal oxide other than thorium (Th) is contained in the main body portion of the cathode, and a tungsten carbide layer is formed on the metal oxide.
摘要翻译：短弧型放电灯包括阴极和布置在电弧管内的阳极以彼此面对。阴极包括由钨制成的主体部分和由钍钨制成的发射极部分，其连接在主体部分的尖端处，其中除了钍（Th）之外的金属氧化物被包含在阴极的主体部分中并且在金属氧化物上形成碳化钨层。

3. 发明授权

US08390198B2 Discharge lamp with an improved cathode of the type having a thoriated tungsten part 有权
标题翻译：具有改进的具有钍钨部分的类型的阴极的放电灯
公开(公告)号：US08390198B2
公开(公告)日：2013-03-05
申请号：US13015136
申请日：2011-01-27
申请人： Akihiro Shimizu , Tomoyoshi Arimoto , Mitsuru Ikeuchi
发明人： Akihiro Shimizu , Tomoyoshi Arimoto , Mitsuru Ikeuchi
IPC分类号： H01J17/04 , H01J17/20
CPC分类号： H01J61/0732 , H01J61/0735 , H01J61/86
摘要： A discharge lamp with excellent arc stability and excellent durability in which the use level of thoriated tungsten is restrained has an anode and a cathode in the interior of a discharge vessel, wherein said cathode is made up from a thoriated tungsten part with a tungsten filling ratio of at least 90 vol.-% and a main body part connected to said thoriated tungsten part and consisting of pure tungsten, wherein a ratio ST/S of a side surface area ST of said thoriated tungsten part and a side surface area S of said cathode is in a range of from 0.005 to 0.15, with the proviso that, in case the cathode has a length in the direction of the cathode axis which exceeds twice the maximum diameter of the cathode, a side surface area S is used for calculating the ratio ST/S which corresponds to the side surface area where the distance along the cathode axis from a tip end adjacent to the anode is twice the maximum diameter of the cathode.
摘要翻译：具有优异的电弧稳定性和优异耐久性的放电灯，其中钍钨的使用水平被限制在放电容器的内部具有阳极和阴极，其中所述阴极由具有钨填充比的钍钨部分至少90体积％，以及连接到所述钍钨部分并由纯钨组成的主体部分，其中所述钍钨部分的侧表面积ST和所述钍钨部分的侧表面积S的比率ST / S 阴极在0.005至0.15的范围内，条件是在阴极的长度方向上阴极轴线的长度超过阴极最大直径的两倍的情况下，侧面积S用于计算与沿着阴极轴线距离与阳极相邻的尖端的距离为两倍于阴极最大直径的侧表面积的比率ST / S。

4. 发明授权

US08400060B2 Short arc type discharge lamp 有权
标题翻译：短弧型放电灯
公开(公告)号：US08400060B2
公开(公告)日：2013-03-19
申请号：US13245028
申请日：2011-09-26
申请人： Tomoyoshi Arimoto , Mitsuru Ikeuchi , Akihiro Shimizu
发明人： Tomoyoshi Arimoto , Mitsuru Ikeuchi , Akihiro Shimizu
IPC分类号： H01J17/04
CPC分类号： H01J61/0735 , H01J61/0732 , H01J61/86
摘要： A short arc type discharge lamp wherein a cathode and an anode are arranged opposite to each other in an interior of a light emitting tube and said cathode consists of a main body part with tungsten as the main constituent and an emitter part comprised of thoriated tungsten, wherein an oxygen content of the main body part of said cathode is lower than that of the emitter part, and band-shaped tungsten carbide is formed at the tip end face of the emitter part of said cathode.
摘要翻译：一种短弧型放电灯，其中阴极和阳极在发光管的内部彼此相对布置，并且所述阴极由以钨为主要成分的主体部分和由钍钨组成的发射极部分组成，其中所述阴极的主体部分的氧含量低于发射极部分的氧含量，并且在所述阴极的发射极部分的末端面上形成带状碳化钨。

5. 发明申请

US20120181925A1 SHORT ARC TYPE DISCHARGE LAMP 有权
标题翻译：短弧型放电灯
公开(公告)号：US20120181925A1
公开(公告)日：2012-07-19
申请号：US13348301
申请日：2012-01-11
申请人： Tomoyoshi Arimoto , Akihiro Shimizu , Mitsuru Ikeuchi
发明人： Tomoyoshi Arimoto , Akihiro Shimizu , Mitsuru Ikeuchi
IPC分类号： H01J61/04
CPC分类号： H01J61/0732 , H01J61/0735 , H01J61/86
摘要： A short arc type discharge lamp includes a cathode and an anode arranged inside an arc tube to face each other. The cathode comprises a main body portion made of tungsten and an emitter portion made of thoriated tungsten that is joined at the tip of the main body portion, where a metal oxide other than thorium (Th) is contained in the main body portion of the cathode, and a tungsten carbide layer is formed on the metal oxide.
摘要翻译：短弧型放电灯包括阴极和布置在电弧管内的阳极以彼此面对。阴极包括由钨制成的主体部分和由钍钨制成的发射极部分，其连接在主体部分的尖端处，其中除了钍（Th）之外的金属氧化物被包含在阴极的主体部分中并且在金属氧化物上形成碳化钨层。

6. 发明授权

US08774687B2 Belt driving apparatus and image forming apparatus 有权
标题翻译：皮带驱动装置和图像形成装置
公开(公告)号：US08774687B2
公开(公告)日：2014-07-08
申请号：US13599184
申请日：2012-08-30
申请人： Akihiro Shimizu , Keitaro Taoka
发明人： Akihiro Shimizu , Keitaro Taoka
IPC分类号： G03G15/01 , G03G15/00 , G03G15/16
CPC分类号： G03G15/1615 , G03G15/755 , G03G2215/00151 , G03G2215/0016
摘要： A belt driving apparatus includes: an endless belt having a stepped region at its edge; a driving member for driving the endless belt; a moving member for moving the endless belt in a widthwise direction; a mark provided at a part of the endless belt with respect to a circumferential direction and located at a position corresponding to the stepped region of the endless belt with respect to a rotational direction; a mark detecting member for detecting the mark during rotation of the endless belt; an edge position detecting member for detecting a widthwise position of at least one of edges of the endless belt during rotation; and a controller for controlling, after the mark detecting member detects the mark, the moving member on the basis of a detection result of the edge other than the stepped region of the endless belt.
摘要翻译：带驱动装置包括：环形带，其边缘具有台阶区域; 用于驱动环形带的驱动构件; 移动构件，用于沿宽度方向移动所述环形带; 相对于圆周方向设置在环形带的一部分处的标记，并且位于相对于环形带的相对于旋转方向的阶梯状区域的位置; 标记检测构件，用于在环形带旋转期间检测标记; 边缘位置检测构件，用于在旋转期间检测环形带的至少一个边缘的宽度方向位置; 以及控制器，用于根据环形带的阶梯区域以外的边缘的检测结果，在标记检测部件检测到标记之后，控制移动部件。

7. 发明申请

US20130058687A1 BELT DRIVING APPARATUS AND IMAGE FORMING APPARATUS 有权
标题翻译：皮带驱动装置和图像形成装置
公开(公告)号：US20130058687A1
公开(公告)日：2013-03-07
申请号：US13599184
申请日：2012-08-30
申请人： Akihiro Shimizu , Keitaro Taoka
发明人： Akihiro Shimizu , Keitaro Taoka
IPC分类号： G03G15/01
CPC分类号： G03G15/1615 , G03G15/755 , G03G2215/00151 , G03G2215/0016
摘要： A belt driving apparatus includes: an endless belt having a stepped region at its edge; a driving member for driving the endless belt; a moving member for moving the endless belt in a widthwise direction; a mark provided at a part of the endless belt with respect to a circumferential direction and located at a position corresponding to the stepped region of the endless belt with respect to a rotational direction; a mark detecting member for detecting the mark during rotation of the endless belt; an edge position detecting member for detecting a widthwise position of at least one of edges of the endless belt during rotation; and a controller for controlling, after the mark detecting member detects the mark, the moving member on the basis of a detection result of the edge other than the stepped region of the endless belt.
摘要翻译：带驱动装置包括：环形带，其边缘具有台阶区域; 用于驱动环形带的驱动构件; 移动构件，用于沿宽度方向移动所述环形带; 相对于圆周方向设置在环形带的一部分处的标记，并且位于相对于环形带的相对于旋转方向的阶梯状区域的位置; 标记检测构件，用于在环形带旋转期间检测标记; 边缘位置检测构件，用于在旋转期间检测环形带的至少一个边缘的宽度方向位置; 以及控制器，用于根据环形带的阶梯区域以外的边缘的检测结果，在标记检测部件检测到标记之后，控制移动部件。

8. 发明授权

US08093681B2 Semiconductor integrated circuit device and process for manufacturing the same 失效
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US08093681B2
公开(公告)日：2012-01-10
申请号：US13044260
申请日：2011-03-09
申请人： Shuji Ikeda , Toshiaki Yamanaka , Kenichi Kikushima , Shinichiro Mitani , Kazushige Sato , Akira Fukami , Masaya Iida , Akihiro Shimizu
发明人： Shuji Ikeda , Toshiaki Yamanaka , Kenichi Kikushima , Shinichiro Mitani , Kazushige Sato , Akira Fukami , Masaya Iida , Akihiro Shimizu
IPC分类号： H01L29/00 , H01L21/8234
CPC分类号： H01L27/11 , G11C11/412 , G11C11/4125 , H01L21/76895 , H01L27/0203 , H01L27/0207 , H01L27/1104 , Y10S257/904
摘要： A SRAM of complete CMOS type having its memory cell composed of six MISFETs, in which a pair of local wiring lines for connecting the input/output terminals of CMOS inverters are formed of a refractory metal silicide layer formed over a first conducting layer constituting the individual gate electrodes of the drive MISFETs, the transfer MISFETs and the load MISFETs of the memory cell and in which a reference voltage line formed over the local wiring lines is arranged to be superposed over the local wiring lines to form a capacity element. Moreover, the capacity element is formed between the local wiring lines and the first conducting layer by superposing the local wiring lines over the first conducting layer. Moreover, the local wiring lines are formed by using resistance lowering means such as silicification. In addition, there are made common the means for lowering the resistance of the gate electrode of the transfer MISFETs and the means for forming the local wiring lines.
摘要翻译：一种完整的CMOS型SRAM，其存储单元由六个MISFET组成，其中一对用于连接CMOS反相器的输入/输出端的局部布线由难熔金属硅化物层形成，该难熔金属硅化物层形成在构成个体的第一导电层上存储单元的驱动MISFET，转移MISFET和负载MISFET的栅极电极，其中形成在局部布线上的参考电压线被布置成叠加在局部布线上以形成电容元件。此外，通过在第一导电层上叠加局部布线，在局部布线和第一导电层之间形成电容元件。此外，通过使用诸如硅化的电阻降低装置来形成局部布线。此外，公开了用于降低转移MISFET的栅电极的电阻和用于形成局部布线的装置的手段。

9. 发明申请

US20110159653A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND PROCESS FOR MANUFACTURING THE SAME 失效
公开(公告)号：US20110159653A1
公开(公告)日：2011-06-30
申请号：US13044652
申请日：2011-03-10
申请人： Shuji Ikeda , Toshiaki Yamanaka , Kenichi Kikushima , Shinichiro Mitani , Kazushige Sato , Akira Fukami , Masaya Iida , Akihiro Shimizu
发明人： Shuji Ikeda , Toshiaki Yamanaka , Kenichi Kikushima , Shinichiro Mitani , Kazushige Sato , Akira Fukami , Masaya Iida , Akihiro Shimizu
IPC分类号： H01L21/8234
CPC分类号： H01L27/11 , G11C11/412 , G11C11/4125 , H01L21/76895 , H01L27/0203 , H01L27/0207 , H01L27/1104 , Y10S257/904
摘要： A SRAM of complete CMOS type having its memory cell composed of six MISFETs, in which a pair of local wiring lines for connecting the input/output terminals of CMOS inverters are formed of a refractory metal silicide layer formed over a first conducting layer constituting the individual gate electrodes of the drive MISFETs, the transfer MISFETs and the load MISFETs of the memory cell and in which a reference voltage line formed over the local wiring lines is arranged to be superposed over the local wiring lines to form a capacity element. Moreover, the capacity element is formed between the local wiring lines and the first conducting layer by superposing the local wiring lines over the first conducting layer. Moreover, the local wiring lines are formed by using resistance lowering means such as silicification. In addition, there are made common the means for lowering the resistance of the gate electrode of the transfer MISFETs and the means for forming the local wiring lines.

10. 发明申请

US20110053250A1 ENRICHMENT METHOD OF VIRUS 审中-公开
标题翻译：病毒的丰富方法
公开(公告)号：US20110053250A1
公开(公告)日：2011-03-03
申请号：US12935492
申请日：2009-03-31
申请人： Yoshimitsu Takakura , Masako Ichikawa , Kazuhiro Kondo , Akihiro Shimizu
发明人： Yoshimitsu Takakura , Masako Ichikawa , Kazuhiro Kondo , Akihiro Shimizu
IPC分类号： C12N7/02
CPC分类号： C12N15/1003 , C12N7/00 , C12N2710/16051 , G01N2333/36
摘要： The present invention provides a novel method that can increase readily a virus or viral vector concentration in a solution having a low concentration and a kit for performing the method. Conventional methods require complicated operations, expensive equipment, or highly trained experts for efficiently concentrating viruses from low-concentration virus solutions. The method of the present invention can concentrate viral vectors readily while maintaining infection abilities of the viral vectors, and thus it can be used as a safe and simple technique for concentrating a vector useful in the field of a genetic therapy or a vaccine therapy using a viral vector.
摘要翻译：本发明提供一种可以容易地增加具有低浓度的溶液中的病毒或病毒载体浓度的新方法和用于进行该方法的试剂盒。常规方法需要复杂的操作，昂贵的设备或受过高度训练的专家，以有效地集中低浓度病毒解决方案的病毒。本发明的方法可以容易地集中病毒载体，同时保持病毒载体的感染能力，因此它可以用作一种安全和简单的技术，用于浓缩在遗传治疗或疫苗治疗领域中有用的载体，其使用病毒载体。

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