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    • 1. 发明授权
    • Method for forming a thin film and apparatus for the same
    • 薄膜形成方法及其制造方法
    • US6083365A
    • 2000-07-04
    • US375522
    • 1999-08-17
    • Akihiro KitabatakeKeiji Yamada
    • Akihiro KitabatakeKeiji Yamada
    • C23C14/22C23C14/32C23C14/34C23C14/35H01J37/34
    • C23C14/228C23C14/22C23C14/32C23C14/34C23C14/352H01J37/3405H01J2237/3137
    • The film-forming apparatus includes a gas introduction tube for introducing an inert gas into a vacuum chamber, a vapor source and a target, and forms thin film by depositing sputtered particles and evaporated particles on the surface of a substrate, the sputtered particles being liberated by sputtering the target using ion energy of plasma generated around the target while the evaporated particles being obtained by evaporating a vapor source by heating and ionizing evaporated components using the plasma. This apparatus includes a substrate holder for holding the substrate so that its film-forming surface faces the side wall of the vacuum chamber; a rotating table for rotating the substrate holder within the vacuum chamber; a target arranged in the side wall of the vacuum chamber so that its sputtering surface faces the inside of the vacuum chamber; a shield detachably fitted in a through hole formed approximately through the center of the target and having a hollow space therein; a gas introduction tube for introducing the inert gas into the hollow space of the shield; and a vapor source provided in the hollow space near the gas exit of the gas introduction tube. This apparatus is employed in the film-forming method of the present invention.
    • 成膜装置包括用于将惰性气体引入真空室,蒸汽源和靶的气体引入管,并通过在基板的表面上沉积溅射的颗粒和蒸发的颗粒而形成薄膜,溅射的颗粒被释放 通过使用靶周围产生的等离子体的离子能溅射靶,同时通过使用等离子体加热和蒸发蒸发的组分蒸发蒸发源获得的蒸发颗粒。 该装置包括用于保持基板以使其成膜表面面对真空室的侧壁的基板保持件; 旋转台,用于在真空室内旋转衬底保持架; 设置在真空室的侧壁中的靶,使得其溅射表面面对真空室的内部; 屏蔽件,其可拆卸地装配在大致穿过所述靶的中心并且在其中具有中空空间的通孔中; 气体引入管,用于将惰性气体引入屏蔽件的中空空间中; 以及设置在气体导入管的气体出口附近的中空空间中的蒸气源。 该装置用于本发明的成膜方法。
    • 2. 发明授权
    • Process of making a thin film
    • 制作薄膜的工艺
    • US6090457A
    • 2000-07-18
    • US76885
    • 1998-05-13
    • Akihiro KitabatakeKeiji Yamada
    • Akihiro KitabatakeKeiji Yamada
    • C23C14/22C23C14/32C23C14/34C23C14/35H01J37/34C23C16/00
    • C23C14/228C23C14/22C23C14/32C23C14/34C23C14/352H01J37/3405H01J2237/3137
    • The film-forming apparatus includes a gas introduction tube for introducing an inert gas into a vacuum chamber, a vapour source and a target, and forms a thin film by depositing sputtered particles and evaporated particles on the surface of a substrate, the sputtered particles being liberated by sputtering the target using ion energy of plasma generated around the target while the evaporated particles being obtained by evaporating a vapour source by heating and ionising evaporated components using the plasma. This apparatus comprises a substrate holder for holding the substrate so that its film-forming surface faces the side wall of the vacuum chamber; a rotating table for rotating the substrate holder within the vacuum chamber; a target arranged in the side wall of the vacuum chamber so that its sputtering surface faces the inside of the vacuum chamber; a shield detachably fitted in a through hole formed approximately through the centre of the target and having a hollow space therein; a gas introduction tube for introducing the inert gas into the hollow space of the shield; and a vapour source provided in the hollow space near the gas exit of the gas introduction tube. This apparatus is employed in the film-forming method of the present invention.
    • 成膜装置包括用于将惰性气体引入真空室,蒸汽源和靶的气体引入管,并通过在基板的表面上沉积溅射的颗粒和蒸发的颗粒而形成薄膜,溅射的颗粒是 通过使用目标周围产生的等离子体的离子能溅射目标,而蒸发的颗粒是通过使用等离子体加热和蒸发蒸发的组分蒸发蒸气源获得的。 该装置包括用于保持基板以使其成膜表面面对真空室的侧壁的基板保持器; 旋转台,用于在真空室内旋转衬底保持架; 设置在真空室的侧壁中的靶,使得其溅射表面面对真空室的内部; 屏蔽件,其可拆卸地装配在大致穿过所述靶的中心并且在其中具有中空空间的通孔中; 气体引入管,用于将惰性气体引入屏蔽件的中空空间中; 以及设置在气体导入管的气体出口附近的中空空间中的蒸气源。 该装置用于本发明的成膜方法。
    • 3. 发明授权
    • Dry etching device
    • 干蚀刻装置
    • US5958141A
    • 1999-09-28
    • US927213
    • 1997-09-11
    • Akihiro KitabatakeKeiji Yamada
    • Akihiro KitabatakeKeiji Yamada
    • H05H1/46C23F4/00H01J37/32H01L21/00H01L21/302H01L21/3065C23C16/00
    • H01L21/67069H01J37/32082H01J37/32192H01J37/32623H01J37/3266
    • The dry etching device according to the present invention comprises a vacuum chamber connected to a vacuum source, a gas supply unit including a gas supply source and a number of gas supply pipes for leading a gas from the gas supply source to an inside of the vacuum chamber, and a number of electrical discharge electrodes, respectively arranged inside the vacuum chamber, for changing the gas led to the inside of the vacuum chamber into a plasma, active ions or both of the plasma and the active ions, wherein the electrical discharge electrode has a number of circular or polygonal ring shaped permanent magnets detachably interfitted into a shaft at regular intervals via each insulator in a magnetizing direction of the each permanent magnet, and aligned so that each magnet pole of the permanent magnets adjacent to each other may be equal to that of the adjacent permanent magnet.
    • 根据本发明的干蚀刻装置包括连接到真空源的真空室,包括气体供应源的气体供应单元和用于将气体从气体供应源引导到真空内部的多个气体供应管 分别设置在真空室内的多个放电电极,用于将导入真空室内部的气体变换为等离子体,有源离子或等离子体和活性离子两者,其中放电电极 具有多个圆形或多边形的环形永久磁铁,每个永久磁铁的磁化方向上经由每个绝缘体以规则的间隔可拆卸地配合到轴中,并且对准,使得彼此相邻的永磁体的每个磁极可以相等 到相邻的永久磁铁。
    • 4. 发明授权
    • Electrode substrate for liquid crystal display device and liquid crystal
display device
    • 液晶显示装置用电极基板及液晶显示装置
    • US5645901A
    • 1997-07-08
    • US495666
    • 1995-07-27
    • Shunsei FukuchiMakoto IwamotoAkihiro KitabatakeMasahiro TanimotoMasaki MaekawaNaoki Shimoyama
    • Shunsei FukuchiMakoto IwamotoAkihiro KitabatakeMasahiro TanimotoMasaki MaekawaNaoki Shimoyama
    • B82B1/00G02F1/1333
    • G02F1/133345G02F1/133305Y10T428/1055Y10T428/31663Y10T428/31667
    • An electrode substrate for liquid crystal display devices is constructed with a resin substrate 4, a cured coating 3, a cured coating 2 and an ITO film 6 laminated in that order. The resin substrate 4 comprises a transparent resin which is a copolymer containing not less than 20% by weight of maleimide type monomer units, having a crosslinked structure and having a glass transition temperature of not lower than 160.degree. C. and not higher than 200.degree. C., and has a thickness of 0.1 to 0.8 mm. The cured coating 3 is a cured coating comprising a polyvinyl alcohol crosslinked with an epoxysilane represented by the formula R.sup.1 SiX.sub.3 wherein R.sup.1 is an organic group of 1 to 10 carbon atoms having a glycidyl group and X is a hydrolyzable group. The cured coating 2 is a siloxane type cured coating containing fine silica particles. The ITO film 6 is an ITO film having a grainy surface with grains of a diameter of not larger than 500 nm, formed at a substrate temperature of not higher than 100.degree. C., and having a thickness of 15 to 500 nm.
    • PCT No.PCT / JP94 / 02067 Sec。 371日期:1995年7月27日 102(e)日期1995年7月27日PCT 1994年12月8日PCT PCT。 WO95 / 16936 PCT出版物 日期:1995年6月22日。液晶显示装置用电极基板由树脂基板4,固化涂层3,固化涂层2和ITO膜6构成。 树脂基板4包括透明树脂,其是含有不少于20重量%马来酰亚胺型单体单元的共聚物,其具有交联结构并且玻璃化转变温度不低于160℃且不高于200℃ 厚度为0.1〜0.8mm。 固化涂层3是包含与由式R 1 SiX 3表示的环氧硅烷交联的聚乙烯醇的固化涂层,其中R1是具有缩水甘油基的1至10个碳原子的有机基团,X是可水解基团。 固化涂层2是含有二氧化硅微粒的硅氧烷型固化涂层。 ITO膜6是在基板温度不高于100℃,厚度为15〜500nm的条件下形成具有粒径不大于500nm的粒状的ITO膜。