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    • 5. 发明授权
    • Graphite intercalation compound
    • 石墨插层化合物
    • US5762898A
    • 1998-06-09
    • US626457
    • 1996-04-02
    • BingShe XuShun-ichiro Tanaka
    • BingShe XuShun-ichiro Tanaka
    • C01B31/00C01B31/02C01B31/04B01D31/02B01D31/04B01D31/30
    • B82Y30/00B82Y40/00C01B31/0206C01B31/0415
    • An onion-like graphite 2 is produced by irradiating an electron beam to an amorphous carbon 3 under an active aluminum nanoparticle 1. By further irradiating the electron beam to the onion-like graphite 2 to intercalate aluminum atoms constituting the aluminum nanoparticle 1 in a space between (001) plane and (002) plane of the onion-like graphite 2 having a layer structure, an intercalation compound 4 is produced. Or, after the aluminum nanoparticles were driven and disposed on the onion-like graphite by electron beam, or the like, by irradiating the electron beam to intercalate aluminum atoms in the space between the (001) plane and the (002) plane of the onion-like graphite having a layer structure, the intercalation compound is produced.
    • 通过向活性铝纳米颗粒1下方的无定形碳3照射电子束来制造洋葱状石墨2.通过进一步向洋葱状石墨2照射电子束,将构成铝纳米粒子1的铝原子插入空间 在具有层结构的洋葱状石墨2的(001)面和(002)面之间,形成插层化合物4。 或者,在通过电子束等将铝纳米粒子驱动并配置在洋葱状石墨上之后,通过照射电子束将铝原子插入到(001)面和(002)面之间的空间中 具有层结构的洋葱状石墨,生成插层化合物。
    • 8. 发明授权
    • Ultrafine Al particle and production method thereof
    • 超细Al颗粒及其制备方法
    • US6033783A
    • 2000-03-07
    • US861821
    • 1997-05-23
    • Shun-ichiro TanakaBingShe Xu
    • Shun-ichiro TanakaBingShe Xu
    • B22F9/04B22F9/30C22C21/00C23C14/14C23C14/30C30B23/02B32B5/16
    • C23C14/30B22F9/30C23C14/14C30B23/002C30B29/02B22F2999/00Y10T428/30
    • An ultrafine Al particle consists of an Al multiply twinned particle. The Al multiply twinned particle has a decahedron structure surrounded by {111} planes. The Al multiply twinned decahedral particle has a diameter of 10 to 30 nm. Such an ultrafine Al particle consisting of the Al multiply twinned decahedral particle is obtained as follows. A metastable Al oxide particle is placed on an amorphous carbon substrate having the reduction effect. Then the electron beam is irradiated to the metastable Al oxide particle placed on the amorphous carbon substrate in the vacuum atmosphere. From the metastable Al oxide particle, Al atoms or Al clusters are emitted and adsorbed to the substrate. By adjusting the electron beam intensity so that the ultrafine Al particle in the above procedure has a diameter from 10 to 30 nm, the Al multiply twinned particle having a decahedron is obtained.
    • 超细Al颗粒由Al多重孪晶颗粒组成。 Al多重孪晶颗粒具有被{111}平面包围的十面体结构。 Al多重双晶十面体粒子的直径为10〜30nm。 由Al多重双晶十面体粒子组成的这种超细Al粒子如下获得。 将亚稳态Al氧化物颗粒放置在具有还原效果的非晶碳衬底上。 然后在真空气氛中将电子束照射到放置在非晶碳基板上的亚稳态Al氧化物颗粒。 从亚稳态Al氧化物颗粒中,Al原子或Al簇被发射并吸附到衬底上。 通过调整电子束强度,使上述方法中的超细Al粒子的直径为10〜30nm,得到具有十面体的Al倍增孪晶粒子。
    • 9. 发明授权
    • Fine projection structure and fabricating method thereof
    • 精细投影结构及其制造方法
    • US6025604A
    • 2000-02-15
    • US94031
    • 1998-06-09
    • Yutaka WakayamaShun-ichiro Tanaka
    • Yutaka WakayamaShun-ichiro Tanaka
    • H01L29/06H01L21/20H01L31/0328H01L31/0336H01L31/072
    • H01L21/02378H01L21/02381H01L21/02425H01L21/02433H01L21/02532H01L21/02645H01L21/02653
    • Dispose a fine metal particle on a semiconductor substrate. By heat-treating this in a vacuum, a constituent element of the semiconductor substrate is dissolved into the fine metal particle to form a solid solution, resulting in further formation of a homogeneous liquid phase (liquid droplet) composed of semiconductor-metal. By annealing this, the constituent element of the semiconductor substrate is precipitated from the semiconductor-metal liquid droplet. Thus, a fine projection composite structure comprising a semiconductor substrate, a semiconductor fine projection epitaxially grown selectively at an arbitrary position on the semiconductor substrate, and a metal layer disposed selectively on the semiconductor fine projection, can be obtained. The metal layer can be removed as demands arise. Such a fine projection composite structure possesses applicability in, for instance, an ultra-high integration semiconductor device or a quantum size device.
    • 在半导体衬底上处理细金属颗粒。 通过在真空中进行热处理,将半导体衬底的构成元素溶解在金属微粒中形成固溶体,从而进一步形成由半导体金属构成的均匀的液相(液滴)。 通过退火,半导体衬底的构成元素从半导体 - 金属液滴中析出。 因此,可以获得包括半导体衬底,在半导体衬底上的任意位置选择性地外延生长的半导体精细投影和选择性地设置在半导体精细投影上的金属层的精细投影复合结构。 金属层可根据需要进行移除。 这种精细投影复合结构在例如超高集成度半导体器件或量子尺寸器件中具有适用性。