会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Semiconductor device and method of fabricating the same
    • 半导体装置及其制造方法
    • US06265262B1
    • 2001-07-24
    • US09587363
    • 2000-06-02
    • Yasutoshi OkunoAkihiko TsuzumitaniYoshihiro Mori
    • Yasutoshi OkunoAkihiko TsuzumitaniYoshihiro Mori
    • H01L218242
    • H01L21/7687H01L21/28518H01L21/76849H01L21/76889H01L27/10852H01L28/60
    • A silicon film is formed within a contact hole formed in a first insulating film on a semiconductor substrate in a manner that an upper portion of the contact hole remains, and a cobalt film is then deposited on the silicon film. Thereafter, a heat treatment is carried out so as to react the silicon film with the cobalt film, thereby forming a cobalt silicide layer in the surface portion of the silicon film. A barrier layer is formed on the cobalt silicide layer so as to completely fill the contact hole, and thus, a plug including the polysilicon film, the cobalt silicide layer and the barrier layer is formed. After a recess is formed in a second insulating film deposited on the first insulating film so as to expose the top surface of the plug, a capacitor bottom electrode, a capacitor dielectric film and a capacitor top electrode are successively formed in the recess.
    • 在半导体基板上形成在第一绝缘膜上的接触孔内形成硅膜,使得保留接触孔的上部,然后在硅膜上沉积钴膜。 此后,进行热处理以使硅膜与钴膜反应,从而在硅膜的表面部分形成钴硅化物层。 在硅化钴层上形成阻挡层,以完全填充接触孔,从而形成包括多晶硅膜,硅化钴层和阻挡层的插塞。 在沉积在第一绝缘膜上的第二绝缘膜中形成凹部以暴露插头的顶面之后,在凹部中依次形成电容器底部电极,电容器电介质膜和电容器顶部电极。