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1. 发明授权

US5893643A Apparatus for measuring pedestal temperature in a semiconductor wafer processing system 失效
标题翻译：用于测量半导体晶片处理系统中基座温度的装置
公开(公告)号：US5893643A
公开(公告)日：1999-04-13
申请号：US824099
申请日：1997-03-25
申请人： Ajay Kumar , Jeffrey Chinn , Shashank C. Deshmukh , Weinan Jiang , Brian Duda , Rolf Guenther , Bruce Minaee , Marco Mombelli , Mark Wiltse
发明人： Ajay Kumar , Jeffrey Chinn , Shashank C. Deshmukh , Weinan Jiang , Brian Duda , Rolf Guenther , Bruce Minaee , Marco Mombelli , Mark Wiltse
IPC分类号： G01J5/02 , G01J5/00 , H01L21/00 , H01L21/205 , H01L21/302 , H01L21/3065 , G01M15/00
CPC分类号： H01L21/67248 , H01L21/67103
摘要： Apparatus for measuring wafer support pedestal temperature in a semiconductor wafer processing system. The apparatus measures infrared energy emitted by the bottom of the pedestal via a tube having one end inserted in a bore through the underside of the cathode pedestal base. The distal end of the tube is coupled to a temperature sensor. Both the tube and temperature sensor are fitted with insulating sleeve adapters to suppress unwanted RF signals from coupling to the sensor.
摘要翻译：用于测量半导体晶片处理系统中的晶片支撑基座温度的装置。该装置测量由基座的底部发射的红外能量，该管的一端通过阴极基座的底面插入孔中。管的远端连接到温度传感器。管和温度传感器均配有绝缘套管适配器，以防止不必要的RF信号与传感器耦合。

2. 发明授权

US5851926A Method for etching transistor gates using a hardmask 失效
标题翻译：使用硬掩模蚀刻晶体管栅极的方法
公开(公告)号：US5851926A
公开(公告)日：1998-12-22
申请号：US724383
申请日：1996-10-01
申请人： Ajay Kumar , Jeffrey Chinn , Shashank C. Deshmukh , Weinan Jiang , Rolf Adolf Guenther , Bruce Minaee , Mark Wiltse
发明人： Ajay Kumar , Jeffrey Chinn , Shashank C. Deshmukh , Weinan Jiang , Rolf Adolf Guenther , Bruce Minaee , Mark Wiltse
IPC分类号： H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/3213 , H01L29/78
CPC分类号： H01L21/32135
摘要： An etchant composition of nitrogen trifluoride and chlorine, preferably also including a passivation material such as hydrogen bromide, etches tungsten silicide-polysilicon gate layers with high selectivity to a thin underlying silicon oxide gate oxide layer to form straight wall, perpendicular profiles with low microloading and excellent profile control.
摘要翻译：三氟化氮和氯的蚀刻剂组合物，优选还包括钝化材料如溴化氢，蚀刻钨硅化物 - 多晶硅栅极层，其具有对薄的底层氧化硅栅极氧化物层的高选择性，以形成具有低微载荷的直壁，垂直剖面，优秀的档案控制。

3. 发明授权

US06558635B2 Microwave gas decomposition reactor 失效
公开(公告)号：US06558635B2
公开(公告)日：2003-05-06
申请号：US09804532
申请日：2001-03-12
申请人： Bruce Minaee , Kambiz Farnaam , Rafik Grant Ayvazyan
发明人： Bruce Minaee , Kambiz Farnaam , Rafik Grant Ayvazyan
IPC分类号： C01J1908
CPC分类号： B01D53/007
摘要： A microwave reactor for decomposing waste green house gases resulting from the manufacture of semiconductors and from other industrial processes. The microwave reactor includes a plasma chamber having a gas inflow port spaced apart from a gas outflow port for transporting gases through the plasma chamber. A gas plasma is generated in the plasma chamber to facilitate the gas decomposition. The structure of the microwave reactor includes an insulating cover protruding into the plasma chamber and forming an internal cavity that is isolated from gases in the plasma chamber. A microwave antenna extends into the internal cavity of the plasma chamber to couple the microwave energy into plasma chamber for causing a plasma to form in the gases.

4. 发明授权

US06261525B1 Process gas decomposition reactor 失效
标题翻译：工艺气体分解反应器
公开(公告)号：US06261525B1
公开(公告)日：2001-07-17
申请号：US09572111
申请日：2000-05-17
申请人： Bruce Minaee
发明人： Bruce Minaee
IPC分类号： B01J1908
CPC分类号： H05B6/782 , B01J19/126 , B01J2219/0871 , B01J2219/0875 , B01J2219/0894 , B01J2219/1227 , B01J2219/1296 , H05B6/802 , H05B6/806 , H05B2206/046
摘要： A process gas decomposition reactor featuring two intertwined helical coils surrounding a gas flow path. Each of the two coils is energized by a separate magnetron having an associated waveguide and an inductive structural element which couples the microwave energy into the coil. The magnetic flux lines from the coil serve to confine ions and electrons within the coil, causing collisions and hence ionization of gas entering a flow path through the coil. The gas, containing HFCs and PFCs is broken down by such collisions with ions and electrons within the gas plasma. The gas displaced at the end of the coil contains decomposition products from the HFCs and PFCs.
摘要翻译：一种工艺气体分解反应器，包括围绕气体流路的两个相互缠绕的螺旋线圈。两个线圈中的每一个由具有相关联的波导和将微波能量耦合到线圈的感应结构元件的单独的磁控管激励。来自线圈的磁通线用于限制线圈内的离子和电子，引起碰撞并因此进入通过线圈的流动路径的气体的电离。含有HFC和PFC的气体通过与气体等离子体内的离子和电子的碰撞而分解。在线圈末端排出的气体含有来自HFC和PFCs的分解产物。

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