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1. 发明申请

US20110256726A1 PLASMA ACTIVATED CONFORMAL FILM DEPOSITION 有权
标题翻译：等离子体激活的合成膜沉积
公开(公告)号：US20110256726A1
公开(公告)日：2011-10-20
申请号：US13084399
申请日：2011-04-11
申请人： Adrien LaVoie , Shankar Swaminathan , Hu Kang , Ramesh Chandrasekharan , Tom Dorsh , Dennis M. Hausmann , Jon Henri , Thomas Jewell , Ming Li , Bryan Schlief , Antonio Xavier , Thomas W. Mountsier , Bart J. van Schravendijk , Easwar Srinivasan , Mandyam Sriram
发明人： Adrien LaVoie , Shankar Swaminathan , Hu Kang , Ramesh Chandrasekharan , Tom Dorsh , Dennis M. Hausmann , Jon Henri , Thomas Jewell , Ming Li , Bryan Schlief , Antonio Xavier , Thomas W. Mountsier , Bart J. van Schravendijk , Easwar Srinivasan , Mandyam Sriram
IPC分类号： H01L21/311 , H01L21/31 , H01L21/306 , C23F1/02 , B05C5/00 , B32B38/08
CPC分类号： H01L21/0228 , C23C16/045 , C23C16/345 , C23C16/402 , C23C16/45523 , C23C16/4554 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02348 , H01L21/28562 , H01L21/67017 , H01L21/6719 , H01L21/67201 , H01L21/76224 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76837 , H01L21/76898
摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.
摘要翻译：在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。在一个方面，该方法的特征在于以下操作：（a）在允许第一反应物吸附到基底表面上的条件下，将气相底物表面暴露于第一反应物; （b）当所述第一反应物吸附在所述基材表面上时，将所述基材表面暴露于气相中的第二反应物; 和（c）将衬底表面暴露于等离子体以驱动吸附在衬底表面上的第一和第二反应物之间的反应以形成膜。

2. 发明授权

US08728956B2 Plasma activated conformal film deposition 有权
标题翻译：等离子体激活的保形膜沉积
公开(公告)号：US08728956B2
公开(公告)日：2014-05-20
申请号：US13084399
申请日：2011-04-11
申请人： Adrien LaVoie , Shankar Swaminathan , Hu Kang , Ramesh Chandrasekharan , Tom Dorsh , Dennis M. Hausmann , Jon Henri , Thomas Jewell , Ming Li , Bryan Schlief , Antonio Xavier , Thomas W. Mountsier , Bart J. van Schravendijk , Easwar Srinivasan , Mandyam Sriram
发明人： Adrien LaVoie , Shankar Swaminathan , Hu Kang , Ramesh Chandrasekharan , Tom Dorsh , Dennis M. Hausmann , Jon Henri , Thomas Jewell , Ming Li , Bryan Schlief , Antonio Xavier , Thomas W. Mountsier , Bart J. van Schravendijk , Easwar Srinivasan , Mandyam Sriram
IPC分类号： H01L21/31
CPC分类号： H01L21/0228 , C23C16/045 , C23C16/345 , C23C16/402 , C23C16/45523 , C23C16/4554 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02348 , H01L21/28562 , H01L21/67017 , H01L21/6719 , H01L21/67201 , H01L21/76224 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76837 , H01L21/76898
摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.
摘要翻译：在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。在一个方面，该方法的特征在于以下操作：（a）在允许第一反应物吸附到基底表面上的条件下，将气相底物表面暴露于第一反应物; （b）当所述第一反应物吸附在所述基材表面上时，将所述基材表面暴露于气相中的第二反应物; 和（c）将衬底表面暴露于等离子体以驱动吸附在衬底表面上的第一和第二反应物之间的反应以形成膜。

3. 发明授权

US08637411B2 Plasma activated conformal dielectric film deposition 有权
标题翻译：等离子体激活的保形电介质膜沉积
公开(公告)号：US08637411B2
公开(公告)日：2014-01-28
申请号：US13242084
申请日：2011-09-23
申请人： Shankar Swaminathan , Jon Henri , Dennis M. Hausmann , Pramod Subramonium , Mandyam Sriram , Vishwanathan Rangarajan , Kirthi K. Kattige , Bart J. van Schravendijk , Andrew J. McKerrow
发明人： Shankar Swaminathan , Jon Henri , Dennis M. Hausmann , Pramod Subramonium , Mandyam Sriram , Vishwanathan Rangarajan , Kirthi K. Kattige , Bart J. van Schravendijk , Andrew J. McKerrow
IPC分类号： H01L21/469 , H01L21/31 , H01L21/311
CPC分类号： H01L21/02123 , C23C16/045 , C23C16/345 , C23C16/401 , C23C16/402 , C23C16/4408 , C23C16/45523 , C23C16/45525 , C23C16/4554 , C23C16/45544 , C23C16/52 , C23C16/56 , H01J37/32412 , H01J2237/3321 , H01J2237/3365 , H01L21/02129 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/02321 , H01L21/0234 , H01L21/02348 , H01L21/67017 , H01L21/76831 , H01L21/76898
摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.
摘要翻译：在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。在一个方面，该方法的特征在于在吸附和反应循环之间将杂质物质间歇地递送到膜。

4. 发明申请

US20120028454A1 PLASMA ACTIVATED CONFORMAL DIELECTRIC FILM DEPOSITION 有权
公开(公告)号：US20120028454A1
公开(公告)日：2012-02-02
申请号：US13242084
申请日：2011-09-23
申请人： Shankar Swaminathan , Jon Henri , Dennis M. Hausmann , Pramod Subramonium , Mandyam Sriram , Vishwanathan Rangarajan , Kirthi K. Kattige , Bart J. van Schravendijk , Andrew J. McKerrow
发明人： Shankar Swaminathan , Jon Henri , Dennis M. Hausmann , Pramod Subramonium , Mandyam Sriram , Vishwanathan Rangarajan , Kirthi K. Kattige , Bart J. van Schravendijk , Andrew J. McKerrow
IPC分类号： H01L21/225 , C23C16/52 , C23C16/50 , C23C16/455 , C23C16/458
CPC分类号： H01L21/02123 , C23C16/045 , C23C16/345 , C23C16/401 , C23C16/402 , C23C16/4408 , C23C16/45523 , C23C16/45525 , C23C16/4554 , C23C16/45544 , C23C16/52 , C23C16/56 , H01J37/32412 , H01J2237/3321 , H01J2237/3365 , H01L21/02129 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/02321 , H01L21/0234 , H01L21/02348 , H01L21/67017 , H01L21/76831 , H01L21/76898
摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

5. 发明申请

US20110256734A1 SILICON NITRIDE FILMS AND METHODS 审中-公开
标题翻译：硅氮化硅膜和方法
公开(公告)号：US20110256734A1
公开(公告)日：2011-10-20
申请号：US13084305
申请日：2011-04-11
申请人： Dennis M. Hausmann , Jon Henri , Mandyam Sriram , Bart J. van Schravendijk
发明人： Dennis M. Hausmann , Jon Henri , Mandyam Sriram , Bart J. van Schravendijk
IPC分类号： H01L21/318
CPC分类号： H01L21/0228 , C23C16/045 , C23C16/345 , C23C16/402 , C23C16/45523 , C23C16/4554 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02348 , H01L21/28562 , H01L21/67017 , H01L21/6719 , H01L21/67201 , H01L21/76224 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76837 , H01L21/76898
摘要： Described are methods of making SiN materials on substrates, particularly SiN thin films on semiconductor substrates. Improved SiN films made by the methods are also included.
摘要翻译：描述了在衬底上制造SiN材料的方法，特别是在半导体衬底上的SiN薄膜。还包括通过这些方法制备的改进的SiN膜。

6. 发明授权

US08101531B1 Plasma-activated deposition of conformal films 有权
标题翻译：等离子体活化沉积的保形膜
公开(公告)号：US08101531B1
公开(公告)日：2012-01-24
申请号：US12889132
申请日：2010-09-23
申请人： Ming Li , Hu Kang , Mandyam Sriram , Adrien LaVoie
发明人： Ming Li , Hu Kang , Mandyam Sriram , Adrien LaVoie
IPC分类号： H01L21/469
CPC分类号： H01L21/02164 , C23C16/045 , C23C16/402 , C23C16/45538 , H01L21/02274
摘要： Methods and hardware for depositing thin conformal films using plasma-activated conformal film deposition (CFD) processes are described herein. In one example, a method for forming a thin conformal film comprises, in a first phase, generating precursor radicals off of a surface of the substrate and adsorbing the precursor radicals to the surface to form surface active species; in a first purge phase, purging residual precursor from the process station; in a second phase, supplying a reactive plasma to the surface, the reactive plasma configured to react with the surface active species and generate the thin conformal film; and in a second purge phase, purging residual reactant from the process station.
摘要翻译：本文描述了使用等离子体激活的保形膜沉积（CFD）工艺沉积薄保形膜的方法和硬件。在一个实例中，形成薄保形膜的方法包括在第一阶段中从衬底的表面产生前体自由基并将前体基团吸附到表面以形成表面活性物质; 在第一清洗阶段，从处理站清除残余前体; 在第二阶段中，将反应性等离子体供应到所述表面，所述反应性等离子体被配置成与所述表面活性物质反应并产生所述薄的保形膜; 并且在第二吹扫阶段，从处理站清除残留的反应物。

7. 发明授权

US08524612B2 Plasma-activated deposition of conformal films 有权
标题翻译：等离子体活化沉积的保形膜
公开(公告)号：US08524612B2
公开(公告)日：2013-09-03
申请号：US13011569
申请日：2011-01-21
申请人： Ming Li , Hu Kang , Mandyam Sriram , Adrien LaVoie
发明人： Ming Li , Hu Kang , Mandyam Sriram , Adrien LaVoie
IPC分类号： H01L21/31 , H01L21/469 , H01L21/44
CPC分类号： H01L21/02104 , C23C16/401 , C23C16/45531 , C23C16/45534 , C23C16/45542 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/76898
摘要： Embodiments related to depositing thin conformal films using plasma-activated conformal film deposition (CFD) processes are described herein. In one example, a method of processing a substrate includes, applying photoresist to the substrate, exposing the photoresist to light via a stepper, patterning the resist with a pattern and transferring the pattern to the substrate, selectively removing photoresist from the substrate, placing the substrate into a process station, and, in the process station, in a first phase, generating radicals off of the substrate and adsorbing the radicals to the substrate to form active species, in a first purge phase, purging the process station, in a second phase, supplying a reactive plasma to the surface, the reactive plasma configured to react with the active species and generate the film, and in a second purge phase, purging the process station.
摘要翻译：本文描述了使用等离子体激活的保形膜沉积（CFD）工艺沉积薄保形膜的实施例。在一个实例中，处理衬底的方法包括：将光致抗蚀剂施加到衬底，通过步进器将光致抗蚀剂曝光，将图案图案化并将图案转移到衬底，从衬底选择性地去除光致抗蚀剂，底物进入处理站，并且在处理站中，在第一阶段中，在第一阶段中产生自由基，并且将基团吸附到基底上以形成活性物质，在第一清洗阶段中，在第二阶段中以第二阶段净化处理站将反应性等离子体供应到所述表面，所述反应性等离子体被配置为与所述活性物质反应并产生所述膜，并且在第二清除阶段中清除所述处理站。

8. 发明申请

US20120077349A1 PLASMA-ACTIVATED DEPOSITION OF CONFORMAL FILMS 有权
标题翻译：等离子体活化沉积膜
公开(公告)号：US20120077349A1
公开(公告)日：2012-03-29
申请号：US13011569
申请日：2011-01-21
申请人： Ming Li , Hu Kang , Mandyam Sriram , Adrien LaVoie
发明人： Ming Li , Hu Kang , Mandyam Sriram , Adrien LaVoie
IPC分类号： H01L21/383
CPC分类号： H01L21/02104 , C23C16/401 , C23C16/45531 , C23C16/45534 , C23C16/45542 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/76898
摘要： Embodiments related to depositing thin conformal films using plasma-activated conformal film deposition (CFD) processes are described herein. In one example, a method of processing a substrate includes, applying photoresist to the substrate, exposing the photoresist to light via a stepper, patterning the resist with a pattern and transferring the pattern to the substrate, selectively removing photoresist from the substrate, placing the substrate into a process station, and, in the process station, in a first phase, generating radicals off of the substrate and adsorbing the radicals to the substrate to form active species, in a first purge phase, purging the process station, in a second phase, supplying a reactive plasma to the surface, the reactive plasma configured to react with the active species and generate the film, and in a second purge phase, purging the process station.
摘要翻译：本文描述了使用等离子体激活的保形膜沉积（CFD）工艺沉积薄保形膜的实施例。在一个实例中，处理衬底的方法包括：将光致抗蚀剂施加到衬底，通过步进器将光致抗蚀剂曝光，将图案图案化并将图案转移到衬底，从衬底选择性地去除光致抗蚀剂，底物进入处理站，并且在处理站中，在第一阶段中，在第一阶段中产生自由基，并且将基团吸附到基底上以形成活性物质，在第一清洗阶段中，在第二阶段中以第二阶段净化处理站将反应性等离子体供应到所述表面，所述反应性等离子体被配置为与所述活性物质反应并产生所述膜，并且在第二清除阶段中清除所述处理站。

9. 发明授权

US08956983B2 Conformal doping via plasma activated atomic layer deposition and conformal film deposition 有权
标题翻译：通过等离子体激活的原子层沉积和保形膜沉积的共形掺杂
公开(公告)号：US08956983B2
公开(公告)日：2015-02-17
申请号：US13607386
申请日：2012-09-07
申请人： Shankar Swaminathan , Mandyam Sriram , Bart van Schravendijk , Pramod Subramonium , Adrien LaVoie
发明人： Shankar Swaminathan , Mandyam Sriram , Bart van Schravendijk , Pramod Subramonium , Adrien LaVoie
IPC分类号： H01L21/469 , H01L21/31 , H01L21/311 , C23C16/04 , C23C16/34 , C23C16/40 , C23C16/455 , C23C16/56 , H01L21/02 , H01L21/768 , H01L21/225 , H01L29/66
CPC分类号： C23C16/045 , C23C16/345 , C23C16/401 , C23C16/402 , C23C16/45523 , C23C16/45531 , C23C16/4554 , C23C16/56 , H01L21/02129 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02274 , H01L21/0228 , H01L21/02348 , H01L21/2255 , H01L21/76831 , H01L21/76898 , H01L29/66803
摘要： Disclosed herein are methods of doping a patterned substrate in a reaction chamber. The methods may include forming a first conformal film layer which has a dopant source including a dopant, and driving some of the dopant into the substrate to form a conformal doping profile. In some embodiments, forming the first film layer may include introducing a dopant precursor into the reaction chamber, adsorbing the dopant precursor under conditions whereby it forms an adsorption-limited layer, and reacting the adsorbed dopant precursor to form the dopant source. Also disclosed herein are apparatuses for doping a substrate which may include a reaction chamber, a gas inlet, and a controller having machine readable code including instructions for operating the gas inlet to introduce dopant precursor into the reaction chamber so that it is adsorbed, and instructions for reacting the adsorbed dopant precursor to form a film layer containing a dopant source.
摘要翻译：这里公开的是在反应室中掺杂图案化衬底的方法。所述方法可以包括形成第一共形膜层，其具有包括掺杂剂的掺杂剂源，并将一些掺杂剂驱动到衬底中以形成共形掺杂分布。在一些实施方案中，形成第一膜层可以包括将掺杂剂前体引入反应室，在其形成吸附限制层的条件下吸附掺杂剂前体，并使吸附的掺杂剂前体反应形成掺杂剂源。还公开了用于掺杂衬底的装置，其可以包括反应室，气体入口和具有机器可读代码的控制器，其具有包括用于操作气体入口以将掺杂剂前体引入反应室以使其被吸附的指令，以及指令用于使吸附的掺杂剂前体反应以形成含有掺杂剂源的膜层。

10. 发明申请

US20130157466A1 SILICON NITRIDE FILMS FOR SEMICONDUCTOR DEVICE APPLICATIONS 审中-公开
标题翻译：用于半导体器件应用的硅氮化硅膜
公开(公告)号：US20130157466A1
公开(公告)日：2013-06-20
申请号：US13766696
申请日：2013-02-13
申请人： Keith Fox , Dong Niu , Joseph L. Womack , Mandyam Sriram , George Andrew Antonelli , Bart J. van Schravendijk , Jennifer O'Loughlin
发明人： Keith Fox , Dong Niu , Joseph L. Womack , Mandyam Sriram , George Andrew Antonelli , Bart J. van Schravendijk , Jennifer O'Loughlin
IPC分类号： H01L21/306
CPC分类号： H01L21/30604 , C23C16/24 , C23C16/345 , C23C16/402 , C23C16/4401 , C23C16/45523 , C23C16/509 , C23C16/54 , H01J37/32082 , H01J2237/3321 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02274 , H01L21/31111 , H01L21/6719 , H01L21/67201 , H01L21/67207 , H01L28/40
摘要： The embodiments herein relate to plasma-enhanced chemical vapor deposition methods and apparatus for depositing silicon nitride on a substrate. The disclosed methods provide silicon nitride films having wet etch rates (e.g., in dilute hydrofluoric acid or hot phosphoric acid) suitable for certain applications such as vertical memory devices. Further, the methods provide silicon nitride films having defined levels of internal stress suitable for the applications in question. These silicon nitride film characteristics can be set or tuned by controlling, for example, the composition and flow rates of the precursors, as well as the RF power supplied to the plasma and the pressure in the reactor. In certain embodiments, a boron-containing precursor is added.
摘要翻译：本文的实施方案涉及用于在衬底上沉积氮化硅的等离子体增强化学气相沉积方法和装置。所公开的方法提供了适用于某些应用例如垂直存储器件的具有湿蚀刻速率（例如，在稀氢氟酸或热磷酸中）的氮化硅膜。此外，这些方法提供具有适合于所讨论的应用的具有确定的内部应力水平的氮化硅膜。这些氮化硅膜特性可以通过控制例如前体的组成和流速以及提供给等离子体的RF功率和反应器中的压力来设定或调节。在某些实施方案中，加入含硼前体。

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