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1. 发明申请

US20090065025A1 CLEANING OF PLASMA CHAMBER WALLS USING NOBLE GAS CLEANING STEP 失效
标题翻译：使用NOBLE气体清洁步骤清洗等离子体室壁
公开(公告)号：US20090065025A1
公开(公告)日：2009-03-12
申请号：US12205596
申请日：2008-09-05
申请人： Adam Michal Urbanowicz , Mikhail Baklanov , Denis Shamiryan , Stefan De Gendt
发明人： Adam Michal Urbanowicz , Mikhail Baklanov , Denis Shamiryan , Stefan De Gendt
IPC分类号： B08B7/00
CPC分类号： C23C16/4405 , B08B7/0057
摘要： An improved reaction chamber cleaning process is provided for removing water residues that makes use of noble-gas plasma reactions. The method is easy applicable and may be combined with standard cleaning procedure. A noble-gas plasma (e.g. He) that emits high energy EUV photons (E>20 eV) which is able to destruct water molecules to form electronically excited oxygen atoms is used to remove the adsorbed water.
摘要翻译：提供了一种改进的反应室清洁方法，用于除去利用惰性气体等离子体反应的水残余物。该方法易于应用，可与标准清洗程序结合使用。使用能够破坏水分子形成电子激发的氧原子的高能量EUV光子（E> 20eV）的稀有气体等离子体（例如He）去除吸附的水。

2. 发明申请

US20110006406A1 FABRICATION OF POROGEN RESIDUES FREE AND MECHANICALLY ROBUST LOW-K MATERIALS 审中-公开
标题翻译：无机和机械稳定的低K材料的制备残留物
公开(公告)号：US20110006406A1
公开(公告)日：2011-01-13
申请号：US12831935
申请日：2010-07-07
申请人： Adam Michal Urbanowicz , Patrick Verdonck , Denis Shamiryan , Kris Vanstreels , Mikhail Baklanov , Stefan De Gendt
发明人： Adam Michal Urbanowicz , Patrick Verdonck , Denis Shamiryan , Kris Vanstreels , Mikhail Baklanov , Stefan De Gendt
IPC分类号： H01L29/06 , H01L21/31
CPC分类号： C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02271 , H01L21/0234 , H01L21/02348 , H01L21/3105 , H01L21/31633 , H01L21/7682 , H01L2221/1047
摘要： A method is provided for producing a porogen-residue-free ultra low-k film with porosity higher than 50% and a high elastic modulus above 5 GPa. The method starts with depositing a SiCOH film using Plasma Enhanced Chemical Vapor Deposition (PE-CVD) or Chemical Vapor Deposition (CVD) onto a substrate and then first Performing an atomic hydrogen treatment at elevated wafer temperature in the range of 200° C. up to 350° C. to remove all the porogens and then performing a UV assisted thermal curing step.
摘要翻译：提供一种制备孔隙率高于50％和高于5GPa的高弹性模量的无致孔剂残留超低k膜的方法。该方法开始于使用等离子体增强化学气相沉积（PE-CVD）或化学气相沉积（CVD）将SiCOH膜沉积到衬底上，然后首先在升高的晶片温度下在200℃范围内进行原子氢处理至350℃以除去所有的致孔剂，然后进行UV辅助热固化步骤。

3. 发明申请

US20090068768A1 QUANTIFICATION OF HYDROPHOBIC AND HYDROPHILIC PROPERTIES OF MATERIALS 有权
标题翻译：材料的疏水性和水解性质的定量
公开(公告)号：US20090068768A1
公开(公告)日：2009-03-12
申请号：US12204165
申请日：2008-09-04
申请人： Adam Michal Urbanowicz , Mikhail Baklanov
发明人： Adam Michal Urbanowicz , Mikhail Baklanov
IPC分类号： G01J3/30 , H01L21/66
CPC分类号： G01N21/631 , G01N21/71
摘要： A non-destructive and simple analytical method is provided which allows in situ monitoring of plasma damage during the plasma processing such as resist stripping. If a low-k film is damaged during plasma processing, one of the reaction products is water, which is remained adsorbed onto the low-k film (into pores), if the temperature is lower than 100-150 C. A plasma (e.g. He) that emits high energy EUV photons (E>20 eV) which is able to destruct water molecules forming electronically excited oxygen atoms is used to detect the adsorbed water. The excited oxygen is detected from optical emission at 777 nm. Therefore, the higher the adsorbed water concentration (higher damage), a more intensive (oxygen) signal is detected. Therefore, intensity of oxygen signal is a measure of plasma damage in the previous strip step. The proposed analytical method can be performed in-situ immediately after plasma processing and most preferred the optical emission of oxygen radicals is monitored during the de-chucking step in the plasma chamber.
摘要翻译：提供了非破坏性和简单的分析方法，其允许在诸如抗蚀剂剥离的等离子体处理期间原位监测等离子体损伤。如果在等离子体处理期间低k膜被损坏，则其中一个反应产物是水，如果温度低于100-150℃，其仍然被吸附到低k膜（到孔中）。等离子体（例如 He）发射能够破坏形成电子激发的氧原子的水分子的高能量EUV光子（E> 20eV）用于检测吸附的水。从777nm的光发射检测到激发的氧。因此，吸附水浓度越高（损伤越高），检测到更加密集（氧）信号。因此，氧信号的强度是前一条带步骤中等离子体损伤的量度。所提出的分析方法可以在等离子体处理之后立即进行，最优选的是在等离子体室中脱卡步骤期间监测氧自由基的光发射。

4. 发明授权

US06593251B2 Method to produce a porous oxygen-silicon layer 有权
标题翻译：生产多孔氧 - 硅层的方法
公开(公告)号：US06593251B2
公开(公告)日：2003-07-15
申请号：US09902544
申请日：2001-07-09
申请人： Mikhail Baklanov , Denis Shamiryan , Karen Maex , Serge Vanhaelemeersch
发明人： Mikhail Baklanov , Denis Shamiryan , Karen Maex , Serge Vanhaelemeersch
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/02343 , H01L21/3121 , H01L21/31633 , H01L21/31695
摘要： The present invention concerns a method to produce a porous oxygen-silicon insulating layer comprising following steps: applying a silicon oxygen layer to a substrate exposing the said substrate to a HF ambient.
摘要翻译：本发明涉及一种制造多孔氧 - 硅绝缘层的方法，包括以下步骤：将硅氧层施加到暴露于所述衬底的衬底至HF环境。

5. 发明申请

US20070148327A1 Method for determining solvent permeability of films 有权
标题翻译：测定薄膜溶剂渗透性的方法
公开(公告)号：US20070148327A1
公开(公告)日：2007-06-28
申请号：US11634410
申请日：2006-12-06
申请人： Mikhail Baklanov , Philippe Foubert
发明人： Mikhail Baklanov , Philippe Foubert
IPC分类号： C23C16/52 , B05D3/00 , B05C3/00 , B05C11/00
CPC分类号： G01N15/0826 , G01N15/082 , G01N2015/0873
摘要： A method is disclosed to measure the permeability of films or coatings towards solvents (e.g. water). First a substrate comprising an absorption or container layer is provided, preferably the material is a porous material. To study water permeability, the porous material is hydrophilic or is made hydrophilic by means of e.g. an anneal process. To study the permeability of the film or coating, the coating is deposited on top of the porous material. The substrate comprising the film or coating on top of the absorption or container layer is then brought into a pressurizable chamber subsequently filled with the gaseous substance of the solvent (e.g. water vapor). By increasing/decreasing the vapor pressure in the chamber between zero and the equilibrium vapor pressure of the solvent used, the permeability (penetration) of solvent through the film or coating can be determined. The amount of solvent that can penetrate through the film or coating can be measured by means of ellipsometry, mass spectrometry, etc. The method of preferred embodiments of the invention can be applied to predict the water permeability of photosensitive coatings used in photolithography in semiconductor processing, which is especially important in case of immersion lithography.
摘要翻译：公开了一种测量膜或涂层对溶剂（例如水）的渗透性的方法。首先，提供包括吸收或容器层的基材，优选地，该材料是多孔材料。为了研究透水性，多孔材料是亲水性的，退火工艺。为了研究膜或涂层的渗透性，将涂层沉积在多孔材料的顶部。然后将包含在吸收层或容器层上的膜或涂层的基材置于随后填充有溶剂的气态物质（例如水蒸汽）的可加压室中。通过增加/减少室内蒸气压在零和所用溶剂的平衡蒸气压之间，可以确定溶剂通过膜或涂层的渗透性（渗透）。可以穿透膜或涂层的溶剂的量可以通过椭偏仪，质谱法等来测量。本发明的优选实施方案的方法可以用于预测半导体加工中用于光刻的光敏涂层的透水性，这在浸渍光刻的情况下尤其重要。

6. 发明授权

US07415902B2 Method for the quantification of hydrophilic properties of porous materials 有权
标题翻译：定量多孔材料亲水性的方法
公开(公告)号：US07415902B2
公开(公告)日：2008-08-26
申请号：US11404440
申请日：2006-04-13
申请人： Mikhail Baklanov , Konstantin Mogilnikov , Quoc Toan Le
发明人： Mikhail Baklanov , Konstantin Mogilnikov , Quoc Toan Le
IPC分类号： G01N7/02
CPC分类号： H01L22/14 , G01N13/00 , G01N15/088 , G01N15/0893 , G01N21/211 , G01N2015/0833 , G01N2015/0846
摘要： Methods for the quantification of hydrophilic properties of a porous material, as well as determining a depth of damage of a porous material are disclosed. An example method includes performing a first ellipsometric measurement on the porous material using a first adsorptive having a first wetting angle. The example method further includes performing a second ellipsometric measurement on the porous material using a second adsorptive having a second wetting angle, wherein the first and second wetting angles are different towards the porous material. The hydrophilic properties of the porous material are determined based, at least in part, on the first and second ellipsometric measurements.
摘要翻译：公开了用于定量多孔材料的亲水性质的方法，以及确定多孔材料的损伤深度。示例性方法包括使用具有第一润湿角的第一吸附剂对多孔材料进行第一椭圆测量。该示例方法还包括使用具有第二润湿角的第二吸附剂对多孔材料进行第二椭偏测量，其中第一和第二润湿角度对于多孔材料是不同的。至少部分地基于第一和第二椭偏测量来确定多孔材料的亲水性。

7. 发明授权

US08974870B2 Fabrication of porogen residues free low-k materials with improved mechanical and chemical resistance 有权
标题翻译：制造残留游离的低k材料，具有改善的机械和化学耐受性
公开(公告)号：US08974870B2
公开(公告)日：2015-03-10
申请号：US13226208
申请日：2011-09-06
申请人： Mikhail Baklanov , Quoc Toan Le , Laurent Souriau , Patrick Verdonck
发明人： Mikhail Baklanov , Quoc Toan Le , Laurent Souriau , Patrick Verdonck
IPC分类号： H05H1/00 , B05D3/06 , B05D3/02 , C23C16/40 , C23C16/56 , H01L21/02 , H01L21/3105 , H01L21/316 , H01L21/768
CPC分类号： C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/0234 , H01L21/02348 , H01L21/3105 , H01L21/31633 , H01L21/7682 , H01L2221/1047
摘要： Methods for fabricating porous low-k materials are provided, such as plasma enhanced chemically vapor deposited (PE-CVD) and chemically vapor deposited (CVD) low-k films used as dielectric materials in between interconnect structures in semiconductor devices. More specifically, a new method is provided which results in a low-k material with significant improved chemical stability and improved elastic modulus, for a porosity obtained.
摘要翻译：提供了制造多孔低k材料的方法，例如在半导体器件的互连结构之间用作介电材料的等离子体增强化学气相沉积（PE-CVD）和化学气相沉积（CVD）低k膜。更具体地，提供了一种新方法，其导致获得的孔隙率的低k材料具有显着改善的化学稳定性和改善的弹性模量。

8. 发明申请

US20060254374A1 Method for the quantification of hydrophilic properties of porous materials 有权
标题翻译：定量多孔材料亲水性的方法
公开(公告)号：US20060254374A1
公开(公告)日：2006-11-16
申请号：US11404440
申请日：2006-04-13
申请人： Mikhail Baklanov , Konstantin Mogilnikov , Quoc Le
发明人： Mikhail Baklanov , Konstantin Mogilnikov , Quoc Le
IPC分类号： G01N33/00
CPC分类号： H01L22/14 , G01N13/00 , G01N15/088 , G01N15/0893 , G01N21/211 , G01N2015/0833 , G01N2015/0846
摘要： Methods for the quantification of hydrophilic properties of a porous material, as well as determining a depth of damage of a porous material are disclosed. An example method includes performing a first ellipsometric measurement on the porous material using a first adsorptive having a first wetting angle. The example method further includes performing a second ellipsometric measurement on the porous material using a second adsorptive having a second wetting angle, wherein the first and second wetting angles are different towards the porous material. The hydrophilic properties of the porous material are determined based, at least in part, on the first and second ellipsometric measurements.
摘要翻译：公开了用于定量多孔材料的亲水性质的方法，以及确定多孔材料的损伤深度。示例性方法包括使用具有第一润湿角的第一吸附剂对多孔材料进行第一椭圆测量。该示例方法还包括使用具有第二润湿角的第二吸附剂对多孔材料进行第二椭偏测量，其中第一和第二润湿角度对于多孔材料是不同的。至少部分地基于第一和第二椭偏测量来确定多孔材料的亲水性。

9. 发明申请

US20120052692A1 FABRICATION OF POROGEN RESIDUES FREE LOW-K MATERIALS WITH IMPROVED MECHANICAL AND CHEMICAL RESISTANCE 有权
标题翻译：具有改进的机械和化学电阻的无机低K材料的制备
公开(公告)号：US20120052692A1
公开(公告)日：2012-03-01
申请号：US13226208
申请日：2011-09-06
申请人： Mikhail Baklanov , Quoc Toan Le , Laurent Souriau , Patrick Verdonck
发明人： Mikhail Baklanov , Quoc Toan Le , Laurent Souriau , Patrick Verdonck
IPC分类号： H01L21/3105
CPC分类号： C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/0234 , H01L21/02348 , H01L21/3105 , H01L21/31633 , H01L21/7682 , H01L2221/1047
摘要： Methods for fabricating porous low-k materials are provided, such as plasma enhanced chemically vapor deposited (PE-CVD) and chemically vapor deposited (CVD) low-k films used as dielectric materials in between interconnect structures in semiconductor devices. More specifically, a new method is provided which results in a low-k material with significant improved chemical stability and improved elastic modulus, for a porosity obtained.
摘要翻译：提供了制造多孔低k材料的方法，例如在半导体器件的互连结构之间用作介电材料的等离子体增强化学气相沉积（PE-CVD）和化学气相沉积（CVD）低k膜。更具体地，提供了一种新方法，其导致获得的孔隙率的低k材料具有显着改善的化学稳定性和改善的弹性模量。

10. 发明申请

US20140322921A1 Method and apparatus for microwave treatment of dielectric films 有权
标题翻译：电介质膜微波处理方法和装置
公开(公告)号：US20140322921A1
公开(公告)日：2014-10-30
申请号：US14120013
申请日：2014-04-15
申请人： Iftikhar Ahmad , Mikhail Baklanov , Liping Zhang
发明人： Iftikhar Ahmad , Mikhail Baklanov , Liping Zhang
IPC分类号： H01L21/02 , H01L21/268
CPC分类号： H05B6/80 , H01L21/02203 , H01L21/02321 , H01L21/02345 , H01L21/02359 , H01L21/2686 , H01L21/67115 , H01L21/67167
摘要： A method for processing a dielectric film on a substrate comprises: depositing a porous dielectric film on a substrate; removing the porogen; stuffing the film with a protective polymeric material; performing at least one intermediate processing step on the stuffed dielectric film; placing the film in a microwave applicator cavity and heating to a first temperature to partially burn out the polymeric material; introducing a controlled amount of a polar solvent into the porosity created by the partial burn out; applying microwave energy to heat the film to a second selected temperature below the boiling point of the solvent to clean away remaining polymeric material; and applying microwave energy to heat the film to a third temperature above the boiling point of the solvent to completely burnout the residues of polymeric material. The interaction of the polar solvent with the microwaves enhances the efficiency of the cleaning process.
摘要翻译：一种用于处理衬底上的电介质膜的方法，包括：在衬底上沉积多孔电介质膜; 去除致孔剂; 用保护性聚合物材料填充该膜; 在填充的电介质膜上执行至少一个中间处理步骤; 将膜放置在微波施加器腔中并加热至第一温度以部分地烧掉聚合物材料; 将受控量的极性溶剂引入由部分烧尽产生的孔隙中; 施加微波能量以将薄膜加热到低于溶剂沸点的第二选定温度以清除剩余的聚合物材料; 并施加微波能量以将膜加热到高于溶剂沸点的第三温度以完全燃烧聚合材料的残余物。极性溶剂与微波的相互作用提高了清洗过程的效率。

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