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1. 发明授权

US07415902B2 Method for the quantification of hydrophilic properties of porous materials 有权
标题翻译：定量多孔材料亲水性的方法
公开(公告)号：US07415902B2
公开(公告)日：2008-08-26
申请号：US11404440
申请日：2006-04-13
申请人： Mikhail Baklanov , Konstantin Mogilnikov , Quoc Toan Le
发明人： Mikhail Baklanov , Konstantin Mogilnikov , Quoc Toan Le
IPC分类号： G01N7/02
CPC分类号： H01L22/14 , G01N13/00 , G01N15/088 , G01N15/0893 , G01N21/211 , G01N2015/0833 , G01N2015/0846
摘要： Methods for the quantification of hydrophilic properties of a porous material, as well as determining a depth of damage of a porous material are disclosed. An example method includes performing a first ellipsometric measurement on the porous material using a first adsorptive having a first wetting angle. The example method further includes performing a second ellipsometric measurement on the porous material using a second adsorptive having a second wetting angle, wherein the first and second wetting angles are different towards the porous material. The hydrophilic properties of the porous material are determined based, at least in part, on the first and second ellipsometric measurements.
摘要翻译：公开了用于定量多孔材料的亲水性质的方法，以及确定多孔材料的损伤深度。示例性方法包括使用具有第一润湿角的第一吸附剂对多孔材料进行第一椭圆测量。该示例方法还包括使用具有第二润湿角的第二吸附剂对多孔材料进行第二椭偏测量，其中第一和第二润湿角度对于多孔材料是不同的。至少部分地基于第一和第二椭偏测量来确定多孔材料的亲水性。

2. 发明申请

US20080085480A1 Method to remove resist layers from a substrate 审中-公开
标题翻译：从基板去除抗蚀剂层的方法
公开(公告)号：US20080085480A1
公开(公告)日：2008-04-10
申请号：US11904277
申请日：2007-09-20
申请人： Guy Vereecke , Quoc Toan Le , Els Kesters
发明人： Guy Vereecke , Quoc Toan Le , Els Kesters
IPC分类号： G03F7/30
CPC分类号： G03F7/425 , G03F7/426 , G03F7/428
摘要： A method for removing a resist layer from a substrate is described. The method for removing a resist layer from a substrate, wherein the resist layer comprises bulk resist contacting the substrate and a resist crust being present at the outer surface of the resist layer, includes providing at least locally a liquid organic solvent on the resist layer contacting the substrate, for which the bulk resist is soluble in the organic solvent and the resist crust is substantially insoluble in the organic solvent. The method further includes stripping the resist layer from the substrate by providing megasonic energy to the organic solvent, creating organic solvent cavitations for fracturing the resist crust, and dissolving the bulk resist in the organic solvent.
摘要翻译：描述了从基板去除抗蚀剂层的方法。从基板去除抗蚀剂层的方法，其中抗蚀剂层包括与基底接触的体抗蚀剂和存在于抗蚀剂层的外表面的抗蚀剂外壳，包括至少局部地在抵抗层上提供液体有机溶剂接触本体抗蚀剂可溶于有机溶剂的底物和抗蚀剂外壳基本上不溶于有机溶剂。该方法还包括通过向有机溶剂提供兆声波能量来从衬底剥离抗蚀剂层，产生用于压裂抗蚀剂外壳的有机溶剂空穴，并将体抗蚀剂溶解在有机溶剂中。

3. 发明授权

US08277564B2 Method for removing a hardened photoresist 有权
标题翻译：去除硬化光致抗蚀剂的方法
公开(公告)号：US08277564B2
公开(公告)日：2012-10-02
申请号：US12561661
申请日：2009-09-17
申请人： Quoc Toan Le , Els Kesters , Guy Vereecke
发明人： Quoc Toan Le , Els Kesters , Guy Vereecke
IPC分类号： C23G1/00
CPC分类号： H01L21/31138 , G03F7/427 , H01L21/31133
摘要： A method for removing a hardened photoresist from a semiconductor substrate. An example method for removing a hardened photoresist layer from a substrate comprising a low-κ dielectric material preserving the characteristics of the low-κdielectric material includes: a)—providing a substrate comprising a hardened photoresist layer and a low-κ dielectric material at least partially exposed; b)—forming C═C double bonds in the hardened photoresist by exposing the hardened photoresist to UV radiation having a wavelength between 200 nm and 300 nm in vacuum or in an inert atmosphere; c)—breaking the C═C double bonds formed in step b) by reacting the hardened photoresist with ozone (O3) or a mixture of ozone (O3) and oxygen (O2) thereby fragmenting the hardened photoresist; and d)—removing the fragmented photoresist obtained in step c) by wet processing with cleaning chemistries.
摘要翻译：一种从半导体衬底去除硬化的光致抗蚀剂的方法。一种用于从包含低kgr的衬底去除硬化的光致抗蚀剂层的示例性方法，保留低介电材料特性的介电材料包括：a）提供包含硬化的光致抗蚀剂层和低介电材料的基材; 介电材料至少部分暴露; b）通过在真空中或在惰性气氛中将硬化的光致抗蚀剂暴露于波长在200nm和300nm之间的UV辐射，在硬化的光致抗蚀剂中形成C = C双键; c）通过使硬化的光致抗蚀剂与臭氧（O 3）或臭氧（O 3）和氧（O 2）的混合物反应从而破坏硬化的光致抗蚀剂，从而破坏步骤b）中形成的C = C双键; 和d）通过用清洁化学物质的湿法处理，去除步骤c）中获得的碎裂的光致抗蚀剂。

4. 发明申请

US20120052692A1 FABRICATION OF POROGEN RESIDUES FREE LOW-K MATERIALS WITH IMPROVED MECHANICAL AND CHEMICAL RESISTANCE 有权
标题翻译：具有改进的机械和化学电阻的无机低K材料的制备
公开(公告)号：US20120052692A1
公开(公告)日：2012-03-01
申请号：US13226208
申请日：2011-09-06
申请人： Mikhail Baklanov , Quoc Toan Le , Laurent Souriau , Patrick Verdonck
发明人： Mikhail Baklanov , Quoc Toan Le , Laurent Souriau , Patrick Verdonck
IPC分类号： H01L21/3105
CPC分类号： C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/0234 , H01L21/02348 , H01L21/3105 , H01L21/31633 , H01L21/7682 , H01L2221/1047
摘要： Methods for fabricating porous low-k materials are provided, such as plasma enhanced chemically vapor deposited (PE-CVD) and chemically vapor deposited (CVD) low-k films used as dielectric materials in between interconnect structures in semiconductor devices. More specifically, a new method is provided which results in a low-k material with significant improved chemical stability and improved elastic modulus, for a porosity obtained.
摘要翻译：提供了制造多孔低k材料的方法，例如在半导体器件的互连结构之间用作介电材料的等离子体增强化学气相沉积（PE-CVD）和化学气相沉积（CVD）低k膜。更具体地，提供了一种新方法，其导致获得的孔隙率的低k材料具有显着改善的化学稳定性和改善的弹性模量。

5. 发明授权

US08974870B2 Fabrication of porogen residues free low-k materials with improved mechanical and chemical resistance 有权
标题翻译：制造残留游离的低k材料，具有改善的机械和化学耐受性
公开(公告)号：US08974870B2
公开(公告)日：2015-03-10
申请号：US13226208
申请日：2011-09-06
申请人： Mikhail Baklanov , Quoc Toan Le , Laurent Souriau , Patrick Verdonck
发明人： Mikhail Baklanov , Quoc Toan Le , Laurent Souriau , Patrick Verdonck
IPC分类号： H05H1/00 , B05D3/06 , B05D3/02 , C23C16/40 , C23C16/56 , H01L21/02 , H01L21/3105 , H01L21/316 , H01L21/768
CPC分类号： C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/0234 , H01L21/02348 , H01L21/3105 , H01L21/31633 , H01L21/7682 , H01L2221/1047
摘要： Methods for fabricating porous low-k materials are provided, such as plasma enhanced chemically vapor deposited (PE-CVD) and chemically vapor deposited (CVD) low-k films used as dielectric materials in between interconnect structures in semiconductor devices. More specifically, a new method is provided which results in a low-k material with significant improved chemical stability and improved elastic modulus, for a porosity obtained.
摘要翻译：提供了制造多孔低k材料的方法，例如在半导体器件的互连结构之间用作介电材料的等离子体增强化学气相沉积（PE-CVD）和化学气相沉积（CVD）低k膜。更具体地，提供了一种新方法，其导致获得的孔隙率的低k材料具有显着改善的化学稳定性和改善的弹性模量。

6. 发明申请

US20100071718A1 Method for Removing a Hardened Photoresist 有权
标题翻译：去除硬化光刻胶的方法
公开(公告)号：US20100071718A1
公开(公告)日：2010-03-25
申请号：US12561661
申请日：2009-09-17
申请人： Quoc Toan Le , Els Kesters , Guy Vereecke
发明人： Quoc Toan Le , Els Kesters , Guy Vereecke
IPC分类号： B08B3/12
CPC分类号： H01L21/31138 , G03F7/427 , H01L21/31133
摘要： A method for removing a hardened photoresist from a semiconductor substrate. An example method for removing a hardened photoresist layer from a substrate comprising a low-κ dielectric material preserving the characteristics of the low-k dielectric material includes: a)—providing a substrate comprising a hardened photoresist layer and a low-κ dielectric material at least partially exposed; b)—forming C═C double bonds in the hardened photoresist by exposing the hardened photoresist to UV radiation having a wavelength between 200 nm and 300 nm in vacuum or in an inert atmosphere; c)—breaking the C═C double bonds formed in step b) by reacting the hardened photoresist with ozone (O3) or a mixture of ozone (O3) and oxygen (O2) thereby fragmenting the hardened photoresist; and d)—removing the fragmented photoresist obtained in step c) by wet processing with cleaning chemistries.
摘要翻译：一种从半导体衬底去除硬化的光致抗蚀剂的方法。一种用于从包含低kgr的衬底去除硬化的光致抗蚀剂层的示例性方法，保留低k电介质材料特性的电介质材料包括：a）提供包含硬化的光致抗蚀剂层和低k电介质材料的衬底。介电材料至少部分暴露; b）通过在真空中或在惰性气氛中将硬化的光致抗蚀剂暴露于波长在200nm和300nm之间的UV辐射，在硬化的光致抗蚀剂中形成C = C双键; c）通过使硬化的光致抗蚀剂与臭氧（O 3）或臭氧（O 3）和氧（O 2）的混合物反应从而破坏硬化的光致抗蚀剂，从而破坏步骤b）中形成的C = C双键; 和d）通过用清洁化学物质的湿法处理，去除步骤c）中获得的碎裂的光致抗蚀剂。

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