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1. 发明申请

US20110159648A1 METHODS OF FOMRING ARRAY OF NANOSCOPIC MOSFET TRANSISTORS 有权
标题翻译： NANOSCOPIC MOSFET晶体管阵列的方法
公开(公告)号：US20110159648A1
公开(公告)日：2011-06-30
申请号：US13040401
申请日：2011-03-04
申请人： Adam L. Ghozeil , James Stasiak , Kevin Peters , Galen H. Kawamoto
发明人： Adam L. Ghozeil , James Stasiak , Kevin Peters , Galen H. Kawamoto
IPC分类号： H01L21/336
CPC分类号： H01L29/66825 , H01L21/28273 , H01L21/823437 , H01L29/1033 , H01L29/66575
摘要： A nanoscopic transistor is made by forming an oxide layer on a semiconductor substrate, applying resist, patterning the resist using imprint lithography to form a pattern aligned along a first direction, applying a first ion-masking material over the pattern, selectively lifting it off to leave a first ion mask to form a gate, forming doped regions by implanting a suitable dopant, applying another layer of resist and patterning the second resist layer using imprint lithography to form a second pattern aligned along a second direction, applying a second ion-masking material over the second pattern, selectively lifting it off to leave a second ion mask defined by the second pattern, and forming second doped regions in the substrate by implanting a suitable second dopant selectively in accordance with the second ion mask. The method may be used to make an array of nanoscopic transistors.
摘要翻译：纳米晶体管通过在半导体衬底上形成氧化物层，施加抗蚀剂，使用压印光刻对抗蚀剂进行构图以形成沿着第一方向排列的图案，在图案上施加第一离子掩模材料，选择性地将其提升到留下第一离子掩模以形成栅极，通过注入合适的掺杂剂形成掺杂区域，施加另一层抗蚀剂并使用压印光刻图案化第二抗蚀剂层以形成沿着第二方向排列的第二图案，施加第二离子掩模材料选择性地将其提起以留下由第二图案限定的第二离子掩模，以及通过根据第二离子掩模选择性地注入合适的第二掺杂剂而在衬底中形成第二掺杂区域。该方法可用于制造纳米晶体管阵列。

2. 发明授权

US08329527B2 Methods of fomring array of nanoscopic MOSFET transistors 有权
标题翻译：制造纳米级MOSFET晶体管阵列的方法
公开(公告)号：US08329527B2
公开(公告)日：2012-12-11
申请号：US13040401
申请日：2011-03-04
申请人： Adam L Ghozeil , James Stasiak , Kevin Peters , Galen H. Kawamoto
发明人： Adam L Ghozeil , James Stasiak , Kevin Peters , Galen H. Kawamoto
IPC分类号： H01L21/336
CPC分类号： H01L29/66825 , H01L21/28273 , H01L21/823437 , H01L29/1033 , H01L29/66575
摘要： A nanoscopic transistor is made by forming an oxide layer on a semiconductor substrate, applying resist, patterning the resist using imprint lithography to form a pattern aligned along a first direction, applying a first ion-masking material over the pattern, selectively lifting it off to leave a first ion mask to form a gate, forming doped regions by implanting a suitable dopant, applying another layer of resist and patterning the second resist layer using imprint lithography to form a second pattern aligned along a second direction, applying a second ion-masking material over the second pattern, selectively lifting it off to leave a second ion mask defined by the second pattern, and forming second doped regions in the substrate by implanting a suitable second dopant selectively in accordance with the second ion mask. The method may be used to make an array of nanoscopic transistors.
摘要翻译：纳米晶体管通过在半导体衬底上形成氧化物层，施加抗蚀剂，使用压印光刻对抗蚀剂进行构图以形成沿着第一方向排列的图案，在图案上施加第一离子掩模材料，选择性地将其提升到留下第一离子掩模以形成栅极，通过注入合适的掺杂剂形成掺杂区域，施加另一层抗蚀剂并使用压印光刻图案化第二抗蚀剂层以形成沿着第二方向排列的第二图案，施加第二离子掩模材料选择性地将其提起以留下由第二图案限定的第二离子掩模，以及通过根据第二离子掩模选择性地注入合适的第二掺杂剂而在衬底中形成第二掺杂区域。该方法可用于制造纳米晶体管阵列。

3. 发明授权

US07902015B2 Array of nanoscopic MOSFET transistors and fabrication methods 有权
标题翻译：纳米MOSFET晶体管阵列及其制造方法
公开(公告)号：US07902015B2
公开(公告)日：2011-03-08
申请号：US11126710
申请日：2005-05-10
申请人： Adam L Ghozeil , James Stasiak , Kevin Peters , Galen H. Kawamoto
发明人： Adam L Ghozeil , James Stasiak , Kevin Peters , Galen H. Kawamoto
IPC分类号： H01L21/8238
CPC分类号： H01L29/66825 , H01L21/28273 , H01L21/823437 , H01L29/1033 , H01L29/66575
摘要： A nanoscopic transistor is made by forming an oxide layer on a semiconductor substrate, applying resist, patterning the resist using imprint lithography to form a pattern aligned along a first direction, applying a first ion-masking material over the pattern, selectively lifting it off to leave a first ion mask to form a gate, forming doped regions by implanting a suitable dopant, applying another layer of resist and patterning the second resist layer using imprint lithography to form a second pattern aligned along a second direction, applying a second ion-masking material over the second pattern, selectively lifting it off to leave a second ion mask defined by the second pattern, and forming second doped regions in the substrate by implanting a suitable second dopant selectively in accordance with the second ion mask. The method may be used to make an array of nanoscopic transistors.
摘要翻译：纳米晶体管通过在半导体衬底上形成氧化物层，施加抗蚀剂，使用压印光刻对抗蚀剂进行构图以形成沿着第一方向排列的图案，在图案上施加第一离子掩模材料，选择性地将其提升到留下第一离子掩模以形成栅极，通过注入合适的掺杂剂形成掺杂区域，施加另一层抗蚀剂并使用压印光刻图案化第二抗蚀剂层以形成沿着第二方向排列的第二图案，施加第二离子掩模材料选择性地将其提起以留下由第二图案限定的第二离子掩模，以及通过根据第二离子掩模选择性地注入合适的第二掺杂剂而在衬底中形成第二掺杂区域。该方法可用于制造纳米晶体管阵列。

4. 发明授权

US07005335B2 Array of nanoscopic mosfet transistors and fabrication methods 有权
标题翻译：纳米晶体管阵列和制造方法
公开(公告)号：US07005335B2
公开(公告)日：2006-02-28
申请号：US10620858
申请日：2003-07-15
申请人： Adam L Ghozeil , James Stasiak , Kevin Peters , Galen H. Kawamoto
发明人： Adam L Ghozeil , James Stasiak , Kevin Peters , Galen H. Kawamoto
IPC分类号： H01L21/8238
CPC分类号： H01L29/66825 , H01L21/28273 , H01L21/823437 , H01L29/1033 , H01L29/66575
摘要： A nanoscopic transistor is made by forming an oxide layer on a semiconductor substrate, applying resist, patterning the resist using imprint lithography to form a pattern aligned along a first direction, applying a first ion-masking material over the pattern, selectively lifting it off to leave a first ion mask to form a gate, forming doped regions by implanting a suitable dopant, applying another layer of resist and patterning the second resist layer using imprint lithography to form a second pattern aligned along a second direction, applying a second ion-masking material over the second pattern, selectively lifting it off to leave a second ion mask defined by the second pattern, and forming second doped regions in the substrate by implanting a suitable second dopant selectively in accordance with the second ion mask. The method may be used to make an array of nanoscopic transistors.
摘要翻译：纳米晶体管通过在半导体衬底上形成氧化物层，施加抗蚀剂，使用压印光刻对抗蚀剂进行构图以形成沿着第一方向排列的图案，在图案上施加第一离子掩模材料，选择性地将其提升到留下第一离子掩模以形成栅极，通过注入合适的掺杂剂形成掺杂区域，施加另一层抗蚀剂并使用压印光刻图案化第二抗蚀剂层以形成沿着第二方向排列的第二图案，施加第二离子掩模材料选择性地将其提起以留下由第二图案限定的第二离子掩模，以及通过根据第二离子掩模选择性地注入合适的第二掺杂剂而在衬底中形成第二掺杂区域。该方法可用于制造纳米晶体管阵列。

5. 发明授权

US07608194B2 Photonic structures, devices, and methods 有权
标题翻译：光子结构，器件和方法
公开(公告)号：US07608194B2
公开(公告)日：2009-10-27
申请号：US11774397
申请日：2007-07-06
申请人： James Stasiak , David Champion , Kevin Peters , Donald J. Coulman , Tony S. Cruz-Uribe
发明人： James Stasiak , David Champion , Kevin Peters , Donald J. Coulman , Tony S. Cruz-Uribe
IPC分类号： B05D1/32 , C23F1/00
CPC分类号： G02B6/1225 , B82Y10/00 , B82Y20/00 , B82Y40/00 , G03F7/0002
摘要： Photonic crystal structures are made by a method including steps of providing a substrate, depositing at least one planar layer to form a stack, each planar layer of the stack comprising two or more sublayers having different sublayer refractive indices, depositing a hard mask material, depositing an imprintable material over the hard mask material, patterning the imprintable material by imprinting an array of depressions, and directionally etching at the depressions a regular array of openings through the hard mask material and the stack.
摘要翻译：光子晶体结构通过包括提供衬底，沉积至少一个平面层以形成堆叠的步骤的方法制成，堆叠的每个平面层包括具有不同子层折射率的两个或多个子层，沉积硬掩模材料，沉积在硬掩模材料之上的可压印材料，通过压印凹陷阵列来图案化可压印材料，并且在凹陷处定向蚀刻通过硬掩模材料和叠层的规则的开口阵列。

6. 发明授权

US07410904B2 Sensor produced using imprint lithography 失效
标题翻译：使用压印光刻产生的传感器
公开(公告)号：US07410904B2
公开(公告)日：2008-08-12
申请号：US10423063
申请日：2003-04-24
申请人： James Stasiak , Kevin Peters
发明人： James Stasiak , Kevin Peters
IPC分类号： H01L21/311
CPC分类号： B81C1/0046 , G01N27/4146
摘要： The disclosure relates to a process including depositing an imprintable layer on a substrate. The imprintable layer is imprinted into the pattern of an imprint-fabricated ribbon. The pattern from the imprintable layer is transferred to the substrate to be used to fabricate the imprint-fabricated ribbon.
摘要翻译：本公开涉及包括在基底上沉积可压印层的方法。可压印层被压印成压印制带的图案。来自可压印层的图案被转移到用于制造压印制造的带的基底。

7. 发明授权

US07255805B2 Photonic structures, devices, and methods 失效
标题翻译：光子结构，器件和方法
公开(公告)号：US07255805B2
公开(公告)日：2007-08-14
申请号：US10755955
申请日：2004-01-12
申请人： James Stasiak , David Champion , Kevin Peters , Donald J. Coulman , Tony S. Cruz-Uribe
发明人： James Stasiak , David Champion , Kevin Peters , Donald J. Coulman , Tony S. Cruz-Uribe
IPC分类号： G02B6/136
CPC分类号： G02B6/1225 , B82Y10/00 , B82Y20/00 , B82Y40/00 , G03F7/0002
摘要： Photonic crystal structures are made by a method including steps of providing a substrate, depositing at least one planar layer to form a stack, each planar layer of the stack comprising two or more sublayers having different sublayer refractive indices, depositing a hard mask material, depositing an imprintable material over the hard mask material, patterning the imprintable material by imprinting an array of depressions, and directionally etching at the depressions a regular array of openings through the hard mask material and the stack.
摘要翻译：光子晶体结构通过包括提供衬底，沉积至少一个平面层以形成堆叠的步骤的方法制成，堆叠的每个平面层包括具有不同子层折射率的两个或多个子层，沉积硬掩模材料，沉积在硬掩模材料之上的可压印材料，通过压印凹陷阵列来图案化可压印材料，并且在凹陷处定向蚀刻通过硬掩模材料和叠层的规则的开口阵列。

8. 发明申请

US20070182015A1 Fabrication of Nanowires 审中-公开
标题翻译：纳米线制造
公开(公告)号：US20070182015A1
公开(公告)日：2007-08-09
申请号：US11460598
申请日：2006-07-27
申请人： Pavel Kornilovich , Peter Mardilovich , Kevin Peters , James Stasiak
发明人： Pavel Kornilovich , Peter Mardilovich , Kevin Peters , James Stasiak
IPC分类号： H01L23/48
CPC分类号： C25D1/04 , C25D1/10 , C25D1/20 , H01L2924/0002 , Y10S977/755 , Y10S977/762 , H01L2924/00
摘要： This disclosure relates to a system and method for creating nanowires. A nanowire can be created by exposing layers of material in a superlattice and dissolving and transferring material from edges of the exposed layers onto a substrate. The nanowire can also be created by exposing layers of material in a superlattice and depositing material onto edges of the exposed layers.
摘要翻译：本公开涉及一种用于产生纳米线的系统和方法。可以通过在超晶格中暴露材料层并将材料从暴露层的边缘溶解并转移到衬底上来产生纳米线。还可以通过在超晶格中暴露材料层并将材料沉积到暴露层的边缘上来产生纳米线。

9. 发明申请

US20050214661A1 Structure formed with template having nanoscale features 有权
标题翻译：由具有纳米尺度特征的模板形成的结构
公开(公告)号：US20050214661A1
公开(公告)日：2005-09-29
申请号：US10807873
申请日：2004-03-23
申请人： James Stasiak , Kevin Peters , Pavel Kornilovich
发明人： James Stasiak , Kevin Peters , Pavel Kornilovich
IPC分类号： B81C99/00 , B81B7/00 , B82B1/00 , C12Q1/68 , G03F7/00 , H01L21/768 , G03F9/00
CPC分类号： G03F7/0002 , B81B7/0006 , B81C1/00126 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C12Q1/68 , H01L21/76817 , H01L21/76877 , H01L2221/1094
摘要： A structure is provided that is formed with a template defining a pattern having nanoscale features. The template may be positioned on a substrate and include a resist layer having openings formed therein, where the template is configured to accommodate the controlled assembly of nanoscale objects.
摘要翻译：提供了形成有限定具有纳米尺度特征的图案的模板的结构。模板可以定位在基底上并且包括其中形成有开口的抗蚀剂层，其中模板被配置为容纳纳米尺度物体的受控组件。

10. 发明申请

US20050070802A1 Chemical sensor 审中-公开
标题翻译：化学传感器
公开(公告)号：US20050070802A1
公开(公告)日：2005-03-31
申请号：US10977177
申请日：2004-10-29
申请人： Kevin Peters , James Stasiak
发明人： Kevin Peters , James Stasiak
IPC分类号： B81C1/00 , G01N27/414 , G01R15/00 , A61B8/14 , G06F19/00
CPC分类号： B81C1/0046 , B81B2201/0214 , B81B2203/0323 , G01N27/4146
摘要： This disclosure relates to chemical sensors. These sensors may have a dimension of less than 100 nanometers. In addition, these sensors may comprise field-effect chemical sensors functionalized to sense a chemical.
摘要翻译：本公开涉及化学传感器。这些传感器可以具有小于100纳米的尺寸。此外，这些传感器可以包括功能化以感测化学品的场效应化学传感器。

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