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1. 发明授权

US06416163B1 Printhead array compensation device designs 有权
标题翻译：打印头阵列补偿装置设计
公开(公告)号：US06416163B1
公开(公告)日：2002-07-09
申请号：US09447316
申请日：1999-11-22
申请人： Abdul M. ElHatem , Lamar T. Baker , Jaime Lerma , Mostafa R. Yazdy
发明人： Abdul M. ElHatem , Lamar T. Baker , Jaime Lerma , Mostafa R. Yazdy
IPC分类号： B41J2135
CPC分类号： B41J2/04575 , B41J2/04541 , B41J2/04543 , B41J2202/13
摘要： Described are various compensation circuit designs to ensure proper shutoff of an unselected transducer in a transducer switching matrix. The switch of an unselected transducer is moved to a strong OFF state by injection of a compensation current. The compensation network is implemented as semiconductor integrated circuits which provide a high-voltage column switching diode, and a compensation switch. The compensation switch and column switching diode are configured such that they are isolated from each other.
摘要翻译：描述了各种补偿电路设计，以确保在换能器开关矩阵中正确地切断未选择的换能器。未选择的换能器的开关通过注入补偿电流而移动到强关闭状态。补偿网络实现为提供高压列开关二极管和补偿开关的半导体集成电路。补偿开关和列开关二极管被配置为使得它们彼此隔离。

2. 发明授权

US06299272B1 Pulse width modulation for correcting non-uniformity of acoustic inkjet printhead 有权
标题翻译：用于校正声学喷墨打印头的不均匀性的脉冲宽度调制
公开(公告)号：US06299272B1
公开(公告)日：2001-10-09
申请号：US09428823
申请日：1999-10-28
申请人： Lamar T. Baker , Steven A. Buhler , Abdul M. Elhatem , Scott A. Elrod , Babur B. Hadimioglu , Jaime Lerma , Mostafa R. Yazdy
发明人： Lamar T. Baker , Steven A. Buhler , Abdul M. Elhatem , Scott A. Elrod , Babur B. Hadimioglu , Jaime Lerma , Mostafa R. Yazdy
IPC分类号： B41J2938
CPC分类号： B41J2/04541 , B41J2/04573 , B41J2/04575 , B41J2/04588 , B41J2/04591 , B41J2/14008 , B41J2002/14322 , H03K5/05 , H03K7/08
摘要： An acoustic inkjet printhead utilizes a pulse width modulation to control droplet size or ejection velocity. An individual control pulse controls the duration and the time a RF signal is applied to each transducer. To modify the RF signal of each transducer, the pulse width of each control signal can be modified according to a predetermined correction data. The rising edge of the control data is delayed according to the correction data while the falling edge is kept the same.
摘要翻译：声学喷墨打印头利用脉冲宽度调制来控制液滴尺寸或喷射速度。单独的控制脉冲控制RF信号施加到每个换能器的持续时间和时间。为了修改每个换能器的RF信号，可以根据预定的校正数据来修改每个控制信号的脉冲宽度。当下降沿保持相同时，控制数据的上升沿根据校正数据被延迟。

3. 发明授权

US5757065A High voltage integrated circuit diode with a charge injecting node 失效
标题翻译：具有电荷注入节点的高压集成电路二极管
公开(公告)号：US5757065A
公开(公告)日：1998-05-26
申请号：US726456
申请日：1996-10-04
申请人： Steven A. Buhler , Jaime Lerma
发明人： Steven A. Buhler , Jaime Lerma
IPC分类号： H01L27/092 , H01L21/8238 , H01L27/06 , H01L29/861 , H01L29/868 , H01L29/06 , H01L31/0352
CPC分类号： H01L29/868 , H01L27/0629
摘要： An integrated CMOS diode with an injection ring which enables construction of an integrated CMOS diode that has the performance characteristics of a high impedance value, when the diode is in the off state, and low impedance, when the diode is in the on state in addition to high breakdown voltages using standard CMOS processing techniques to construct the integrated circuit diode.
摘要翻译：具有注入环的集成CMOS二极管，当二极管处于截止状态时，能够构建具有高阻抗值的性能特性的集成CMOS二极管，并且当二极管处于导通状态时，其具有低阻抗使用标准CMOS处理技术来构建集成电路二极管的高击穿电压。

4. 发明授权

US5786722A Integrated RF switching cell built in CMOS technology and utilizing a high voltage integrated circuit diode with a charge injecting node 失效
标题翻译：内置CMOS技术的集成射频开关单元，并利用具有电荷注入节点的高压集成电路二极管
公开(公告)号：US5786722A
公开(公告)日：1998-07-28
申请号：US746589
申请日：1996-11-12
申请人： Steven A. Buhler , Jaime Lerma , Mohammad M. Mojarradi
发明人： Steven A. Buhler , Jaime Lerma , Mohammad M. Mojarradi
IPC分类号： H01L27/092 , H01L21/8238 , H01L27/06 , H01L29/861 , H01L29/868
CPC分类号： H01L27/0629
摘要： An integrated CMOS diode with an injection ring that enables construction of an integrated CMOS RF switch. Construction techniques of using a diffused n-well resistor, parasitic capacitance and construction of the diode underneath a bonding input pad contribute to performance of the switch as well as saving space needed to construct the switch.
摘要翻译：具有注入环的集成CMOS二极管，可构建集成的CMOS RF开关。使用扩散的n阱电阻器，寄生电容和结合输入焊盘下面的二极管的构造的构造技术有助于开关的性能，并节省构建开关所需的空间。

5. 发明授权

US5321293A Integrated device having MOS transistors which enable positive and negative voltage swings 失效
标题翻译：具有MOS晶体管的集成器件，其实现正负电压摆幅
公开(公告)号：US5321293A
公开(公告)日：1994-06-14
申请号：US88945
申请日：1993-07-12
申请人： Mohamad M. Mojaradi , Tuan Vo , Jaime Lerma , Steven A. Buhler
发明人： Mohamad M. Mojaradi , Tuan Vo , Jaime Lerma , Steven A. Buhler
IPC分类号： H01L29/78 , H01L27/02 , H01L27/092 , H03K17/30 , H03K3/01
CPC分类号： H01L27/0925 , H01L27/0251 , H03K17/302
摘要： A semiconductor circuit integrated with CMOS circuits for receiving a TTL input voltage and generating a large negative and positive voltage swing with respect to p-type or n-type substrate is disclosed. This invention is based on elimination of the electro-static discharge (ESD) protection circuit which is a requirement for any integrated circuit. Eliminating the ESD protection circuit also eliminates the clamping feature of the ESD protection circuit and therefore the circuit can be driven to negative voltages for PMOS circuits and to positive voltages for NMOS circuits. This provides the possibility of connecting the drain of a a P-channel type metal oxide silicon field effect (PMOS) transistor, which is fabricated on a p-type substrate within an n-well, to a voltage below the the substrate voltage. Also, in a n-channel type metal oxide silicon field effect (NMOS) transistor which is fabricated on a n-type substrate within a P-well, the drain can be connected to voltages higher than the substrate voltage. Utilizing this feature of a MOS transistor provides a way to design an integrated circuit which can handle negative voltage swings as well as positive voltage swings.
摘要翻译：公开了一种与用于接收TTL输入电压并且相对于p型或n型衬底产生大的负和正电压摆幅的CMOS电路集成的半导体电路。本发明基于消除作为任何集成电路的要求的静电放电（ESD）保护电路。消除ESD保护电路也消除了ESD保护电路的钳位特性，因此电路可以被驱动到PMOS电路的负电压和NMOS电路的正电压。这提供了将制造在n阱内的p型衬底上的P沟道型金属氧化物硅场效应（PMOS）晶体管的漏极连接到低于衬底电压的电压的可能性。此外，在P阱内的n型衬底上制造的n沟道型金属氧化物硅场效应（NMOS）晶体管中，漏极可以连接到高于衬底电压的电压。利用MOS晶体管的这一特征提供了一种设计可以处理负电压摆幅以及正电压摆幅的集成电路的方法。

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